Influence of Rb/Cs Cation-Exchange on Inorganic Sn Halide Perovskites: From Chemical Structure to Physical Properties

Composition Dictates Octahedral Tilt and Photostability in Halide Perovskites

Halide perovskites are excellent candidate materials for use in solar cell, LED, and detector devices, in part because their composition can be tuned to achieve ideal optoelectronic properties. Empirical efficiency optimization has led the field toward compositions rich in FA (formamidinium) on the A-site and I on the X-site, with additional small amounts of MA (methylammonium) or Cs A-site cations and Br X-site anions. However, it is not clear how and why the specific compositions of alloyed, that is, mixed component, halide perovskites relate to photo-stability of the materials. Here, this work combines synchrotron grazing incidence wide-angle X-ray scattering, photoluminescence, high-resolution scanning electron diffraction measurements and theoretical modelling to reveal the links between material structure and photostability. Namely, this work finds that increased octahedral titling leads to improved photo-stability that is correlated with lower densities of performance-harming hexagonal polytype impurities. These results uncover the structural signatures underpinning photo-stability and can therefore be used to make targeted changes to halide perovskites, bettering the commercial prospects of technologies based on these materials.

Bulk and Surface Contributions to Ionisation Potentials of Metal Oxides

Determining the absolute band edge positions in solid materials is crucial for optimising their performance in wide-ranging applications including photocatalysis and electronic devices. However, obtaining absolute energies is challenging, as seen in CeO2 , where experimental measurements show substantial discrepancies in the ionisation potential (IP). Here, we have combined several theoretical approaches, from classical electrostatics to quantum mechanics, to elucidate the bulk and surface contributions to the IP of metal oxides. We have determined a theoretical bulk contribution to the IP of stoichiometric CeO2 of only 5.38 eV, while surface orientation results in intrinsic IP variations ranging from 4.2 eV to 8.2 eV. Highly tuneable IPs were also found in TiO2 , ZrO2 , and HfO2 , in which surface polarisation plays a pivotal role in long-range energy level shifting. Our analysis, in addition to rationalising the observed range of experimental results, provides a firm basis for future interpretations of experimental and computational studies of oxide band structures.

Surface energy and surface stability of cesium tin halide perovskites: a theoretical investigation

Lead halide perovskites have been widely studied in the fields of photovoltaics and optoelectronics for over a decade. The toxicity of lead poses a big challenge to the potential applications of the materials. In recent years, lead-free halide perovskites have received significant attention due to their excellent optoelectronic properties and environment-friendly character. Tin halide perovskites have emerged as one of the most promising candidates for lead-free optoelectronic materials. It is of fundamental importance to understand the surface properties of tin halide perovskites that remain largely unknown. Using the density functional theory (DFT) method, we explore the surface energy and surface stability of low-index surfaces of cubic CsSnX₃ (X = Cl, Br, I), i.e., (100), (110), and (111) surfaces. We calculate the stability phase diagrams of these surfaces and find that the (100) surface is more stable than the (110) and (111) surfaces. Interestingly, Br₂-terminated (110) and CsBr₃-terminated (111) polar surfaces are relatively more stable in CsSnBr₃ than those in CsPbBr₃ due to a higher level of valence band maximum and thus lesser energy cost in removing electrons to compensate for the polarity of the former. We calculate the surface energies of CsSnX₃ surfaces that are difficult to access from experiments. The surface energies are very low in comparison with that of oxide perovskites. The origin of this lies in the relatively low binding strength of halide perovskites because of the soft nature of their structures. Furthermore, the connection between exfoliation energy and the cleavage energy in CsSnX₃ is discussed.

High Performance Inverted RbCsFAPbI3 Perovskite Solar Cells Based on Interface Engineering and Defects Passivation

Lead halide-based perovskites solar cells (PSCs) are intriguing candidates for photovoltaic technology due to their high efficiency, low cost, and simple fabrication processes. Currently, PSCs with efficiencies of >25% are mainly based on methylammonium (MA)-free and bromide (Br) free, formamide lead iodide (FAPbI3)-based perovskites, because MA is thermally instable due to its volatile nature and Br incorporation will induce blue shift in the absorption spectrum. Therefore, MA-free, Br-free formamidine-based perovskites are drawing huge research attention in recent years. The hole transporting layer (HTL) is crucial in fabricating highly efficient and stable inverted p-i-n structured PSCs by enhancing charge extraction, lowering interfacial recombination, and altering band alignment, etc. Here, this work employs a NiO_x /PTAA bi-layer HTL combined with GuHCl (guanidinium hydrochloride) additive engineering and PEAI (phenylethylammonium iodide) passivation strategy to optimize the charge carrier dynamics and tune defects chemistry in the MA-free, Br-free RbCsFAPbI3-based perovskite absorber, which boosts the device efficiency up to 22.78%. Additionally, the device retains 95% of its initial performance under continuous 1 sun equivalent LED light illumination at 45 °C for up to 500 h.

Generating spin-triplet states at the bulk perovskite/organic interface for photon upconversion

Perovskite-sensitized triplet-triplet annihilation (TTA) upconversion (UC) holds potential for practical applications of solid-state UC ranging from photovoltaics to sensing and imaging technologies. As the triplet sensitizer, the underlying perovskite properties heavily influence the generation of spin-triplet states once interfaced with the organic annihilator molecule, typically polyacene derivatives. Presently, most reported perovskite TTA-UC systems have utilized rubrene doped with ∼1% dibenzotetraphenylperiflanthene (RubDBP) as the annihilator/emitter species. However, practical applications require a larger apparent anti-Stokes than is currently achievable with this system due to the inherent 0.4 eV energy loss during triplet generation. In this minireview, we present the current understanding of the triplet sensitization process at the perovskite/organic semiconductor interface and introduce additional promising annihilators based on anthracene derivatives into the discussion of future directions in perovskite-sensitized TTA-UC.

Impact of alkaline-earth doping on electronic properties of the photovoltaic perovskite CsSnI3: insights from a DFT perspective

The oxidation of Sn(II) to the more stable Sn(IV) degrades the photovoltaic perovskite material CsSnI₃; however, this problem can be counteracted via alkaline-earth (AE) doping. In this work, the electronic properties of CsSn_1-xAE_xI₃, with x = 0 and 0.25, and AE = Mg and Ca, were investigated via Density Functional Theory. It is proven that the synthetic reactions of all these perovskites are thermodynamically viable. Besides, a slight strengthening in the metal-halide bonds is found in the Mg-doped perovskite; consequently, it exhibits the greatest bulk modulus. Nevertheless, the opposite occurrs with the Ca-doped perovskite, which has the smallest bulk modulus due to the weakening of its metal-halide bonds. The calculated bandgaps for CsSnI₃, Mg-doped and Ca-doped perovskites are 1.11, 1.32 and 1.55 eV, respectively, remaining remarkably close to the best photovoltaic-performing value for single-junction solar cells of 1.34 eV. Nevertheless, an indirect bandgap was predicted under Mg-doping. These results support the possibility of implementing AE-doped perovskites as absorber materials in single-junction solar cells, which can deliver higher output voltages than that using CsSnI₃. Finally, it was found that Sr or Ba doping could result in semiconductors with bandgaps close to 2.0 eV.

Using Feature-Assisted Machine Learning Algorithms to Boost Polarity in Lead-Free Multicomponent Niobate Alloys for High-Performance Ferroelectrics

To expand the unchartered materials space of lead-free ferroelectrics for smart digital technologies, tuning their compositional complexity via multicomponent alloying allows access to enhanced polar properties. The role of isovalent A-site in binary potassium niobate alloys, (K,A)NbO₃ using first-principles calculations is investigated. Specifically, various alloy compositions of (K,A)NbO₃ are considered and their mixing thermodynamics and associated polar properties are examined. To establish structure-property design rules for high-performance ferroelectrics, the sure independence screening sparsifying operator (SISSO) method is employed to extract key features to explain the A-site driven polarization in (K,A)NbO₃ . Using a new metric of agreement via feature-assisted regression and classification, the SISSO model is further extended to predict A-site driven polarization in multicomponent systems as a function of alloy composition, reducing the prediction errors to less than 1%. With the machine learning model outlined in this work, a polarity-composition map is established to aid the development of new multicomponent lead-free polar oxides which can offer up to 25% boosting in A-site driven polarization and achieving more than 150% of the total polarization in pristine KNbO₃ . This study offers a design-based rational route to develop lead-free multicomponent ferroelectric oxides for niche information technologies.

Lead-free CsSnCl3 perovskite nanocrystals: rapid synthesis, experimental characterization and DFT simulations

Lead-free metal halide perovskites have attracted great attention as light harvesters due to their promising optoelectronic and photovoltaic properties. In this investigation, we have successfully synthesized thermally stable cubic phase cesium tin chloride (CsSnCl₃) perovskite nanocrystals with improved surface morphology by adopting a rapid hot-injection technique. The excellent crystalline quality of these cubic shaped nanocrystals was confirmed by high-resolution transmission electron microscopy imaging. The binding of organic ligands on the surface of the sample was identified and characterized using nuclear magnetic resonance spectroscopy. UV-visible spectroscopy confirmed that the CsSnCl₃ nanocrystals have a direct band gap of ∼2.98 eV, which was further confirmed using steady-state photoluminescence spectroscopy. The band edge positions calculated using the Mulliken electronegativity approach predicted the potential photocatalytic capability of the as-prepared nanocrystals, which was then experimentally corroborated through the photodegradation of rhodamine-B dye under both visible and UV-visible irradiation. Our theoretical calculations employing experimentally obtained structural parameters within the generalized gradient approximation (GGA) and GGA+U methods demonstrated a 90% accurate estimation of the experimentally observed optical band gap when U_eff = 6 eV was considered. The ratio of the effective mass of the hole and electron expressed as was also calculated for U_eff = 6 eV. Based on this theoretical calculation and experimental observation of the photocatalytic performance of CsSnCl₃ nanocrystals, we have proposed a rational interpretation of the "D" value. We think that a "D" value of either much smaller or much larger than 1 is an indication of the low recombination rate of the photogenerated electron-hole pairs and the high photocatalytic efficiency of the photocatalyst. We believe that this comprehensive investigation might be helpful for the large-scale synthesis of thermally stable cubic CsSnCl₃ nanocrystals and also for a greater understanding of their potential in photocatalytic, photovoltaic and other prominent optoelectronic applications.

First-principles study on structural, electronic and optical properties of perovskite solid solutions KB1-x Mg x I3 (B = Ge, Sn) toward water splitting photocatalysis

Perovskite materials have been recently attracting a great amount of attention as new potential photocatalysts for water splitting hydrogen evolution. Here, we propose lead-free potassium iodide perovskite solid solutions KBI₃ with B-site mixing between Ge/Sn and Mg as potential candidates for photocatalysts based on systematic first-principles calculations. Our calculations demonstrate that these solid solutions, with proper Goldschmidt and octahedral factors for the perovskite structure, become stable by configurational entropy at finite temperature and follow Vegard’s law in terms of lattice constant, bond length and elastic constants. We calculate their band gaps with different levels of theory with and without spin–orbit coupling, revealing that the hybrid HSE06 method yields band gaps increasing along the quadratic function of Mg content x. Moreover, we show that the solid solutions with 0.25 ≤ x ≤ 0.5 have appropriate band gaps between 1.5 and 2.2 eV, reasonable effective masses of charge carriers, and suitable photoabsorption coefficients for absorbing sunlight. Among the solid solutions, KB_0.5Mg_0.5I₃ (B = Ge, Sn) is found to have the most promising band edge alignment with respect to the water redox potentials with different pH values, motivating experimentalists to synthesize them.

We propose lead-free potassium iodide perovskite solid solutions KBI₃ with B-site mixing between Ge/Sn and Mg as potential candidates for photocatalysts based on systematic first-principles calculations.

Unified theory for light-induced halide segregation in mixed halide perovskites

Mixed halide perovskites that are thermodynamically stable in the dark demix under illumination. This is problematic for their application in solar cells. We present a unified thermodynamic theory for this light-induced halide segregation that is based on a free energy lowering of photocarriers funnelling to a nucleated phase with different halide composition and lower band gap than the parent phase. We apply the theory to a sequence of mixed iodine-bromine perovskites. The spinodals separating metastable and unstable regions in the composition-temperature phase diagrams only slightly change under illumination, while light-induced binodals separating stable and metastable regions appear signalling the nucleation of a low-band gap iodine-rich phase. We find that the threshold photocarrier density for halide segregation is governed by the band gap difference of the parent and iodine-rich phase. Partial replacement of organic cations by cesium reduces this difference and therefore has a stabilizing effect.

Inorganic and Layered Perovskites for Optoelectronic Devices

Organic-inorganic halide perovskites are making breakthroughs in a range of optoelectronic devices. Reports of >23% certified power conversion efficiency in photovoltaic devices, external quantum efficiency >21% in light-emitting diodes (LEDs), continuous-wave lasing and ultralow lasing thresholds in optically pumped lasers, and detectivity in photodetectors on a par with commercial GaAs rivals are being witnessed, making them the fastest ever emerging material technology. Still, questions on their toxicity and long-term stability raise concerns toward their market entry. The intrinsic instability in these materials arises due to the organic cation, typically the volatile methylamine (MA), which contributes to hysteresis in the current-voltage characteristics and ion migration. Alternative inorganic substitutes to MA, such as cesium, and large organic cations that lead to a layered structure, enhance structural as well as device operational stability. These perovskites also provide a high exciton binding energy that is a prerequisite to enhance radiative emission yield in LEDs. The incorporation of inorganic and layered perovskites, in the form of polycrystalline films or as single-crystalline nanostructure morphologies, is now leading to the demonstration of stable devices with excellent performance parameters. Herein, key developments made in various optoelectronic devices using these perovskites are summarized and an outlook toward stable yet efficient devices is presented.

Disparity of the Nature of the Band Gap between Halide and Chalcogenide Single Perovskites for Solar Cell Absorbers

Chalcogenide perovskites ABX₃ (A = Ca, Sr, or Ba; B = Ti, Zr, or Hf; and X = O, S, or Se) have been considered as promising candidates for overcoming the stability and toxic issues of halide perovskites. In this work, we unveil the disparity of the nature of the band gap between halide and chalcogenide perovskites. First-principles calculations show that the prototype cubic phase of chalcogenide perovskites exhibits indirect band gaps with the valence band maximum and the conduction band minimum located at R and Γ points, respectively, in the Brillion zone. Therefore, the optical transitions near band edges of chalcogenide perovskites differ from those of its halide counterparts, although its stable orthorhombic phase embodies a direct band gap. We have further found that the direct-indirect band gap difference of chalcogenide perovskites in the cubic phase demonstrates a linear correlation with t + μ, where t and μ are the tolerance and octahedral factor, respectively, thereby providing a viable way to search chalcogenide perovskites with a quasi-direct band gap.

Band Alignment Boosts Charge-Carrier Collection in Sn-based Perovskite over Pb Counterparts

The diverse elemental compositions endow metal halide perovskites with tailorable electronic structures and broad optoelectronic applications. For Sn-based perovskites, their bandedge positions, which govern interfacial charge-carrier transport, are less well studied than their Pb counterparts. In this work, the valence band maximum (VBM) of CsSnBr₃ was experimentally and theoretically determined to be -5.2 eV, to which Au forms a good contact. The conduction band minimum (CBM) of CsSnBr₃ at -3.4 eV is matched by 1,3,5-tris(4-phenylquinolin-2-yl)benzene (TQB), an organic electron transport material and a ligand to Sn(II). Thanks to proper band alignment, the device structure Al/TQB/CsSnBr₃/Au constitutes a photodetector responsive to the entire visible spectrum without a bias voltage and outperforms Pb-based devices under similar conditions. Our results highlight the advantage of combined experimental and theoretical tools in understanding intrinsic material properties and guiding device fabrication.

Halide Perovskites: Is It All about the Interfaces?

Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On the basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.

Roles of SnX2 (X = F, Cl, Br) Additives in Tin-Based Halide Perovskites toward Highly Efficient and Stable Lead-Free Perovskite Solar Cells

Preserving the stability of Sn-based halide perovskites is a primary concern in developing photovoltaic light-absorbing materials for lead-free perovskite solar cells. Whereas the addition of SnX₂ (X = F, Cl, Br) has been demonstrated to improve the photovoltaic performance of Sn halide perovskite solar cells, the mechanistic roles of SnX₂ in the performance enhancement have not yet been studied appropriately. Here we perform a comparative study of CsSnI₃ films and devices and examine how SnX₂ additives affect their stability, and the results are corroborated by first-principles-based theoretical calculations. Unlike the conventional belief that the additives annihilate defects, we find that the additives effectively passivate the surface and stabilize the perovskite phase, promoting the stability of CsSnI₃. Our mechanism suggests that SnBr₂, which shows ca. 100 h of prolonged stability along with a high power conversion efficiency of 4.3%, is the best additive for enhancing the stability of CsSnI₃.

Lead-free hybrid perovskites for photovoltaics

This review covers the state-of-the-art in organo-inorganic lead-free hybrid perovskites (HPs) and applications of these exciting materials as light harvesters in photovoltaic systems. Special emphasis is placed on the influence of the spatial organization of HP materials both on the micro- and nanometer scale on the performance and stability of perovskite-based solar light converters. This review also discusses HP materials produced by isovalent lead(II) substitution with Sn2+ and other metal(II) ions, perovskite materials formed on the basis of M3+ cations (Sb3+, Bi3+) as well as on combinations of M+/M3+ ions aliovalent to 2Pb2+ (Ag+/Bi3+, Ag+/Sb3+, etc.). The survey is concluded with an outlook highlighting the most promising strategies for future progress of photovoltaic systems based on lead-free perovskite compounds.

Stabilizing Lead-Free All-Inorganic Tin Halide Perovskites by Ion Exchange

Because of its thermal stability, lead-free composition, and nearly ideal optical and electronic properties, the orthorhombic CsSnI₃ perovskite is considered promising as a light absorber for lead-free all-inorganic perovskite solar cells. However, the susceptibility of this three-dimensional perovskite toward oxidation in air has limited the development of solar cells based on this material. Here, we report the findings of a computational study which identifies promising Rb _y Cs_1-y Sn(Br _x I_1-x )₃ perovskites for solar cell applications, prepared by substituting cations (Rb for Cs) and anions (Br for I) in CsSnI₃. We show the evolution of the material electronic structure as well as its thermal and structural stabilities upon gradual substitution. Importantly, we demonstrate how the unwanted yellow phase can be suppressed by substituting Br for I in CsSn(Br _x I_1-x )₃ with x ≥ 1/3. We predict that substitution of Rb for Cs results in a highly homogeneous solid solution and therefore an improved film quality and applicability in solar cell devices.

Lateral epitaxial heterojunctions in single nanowires fabricated by masked cation exchange

Cation exchange is a versatile tool to control the composition of nanocrystals, and recently deterministic patterning could be achieved by combining it with lithography techniques. Regarding single nanocrystal structures, such spatial control of cation exchange enables the design of heterostructures, which can be integrated in functional optoelectronic elements. In this work, we fabricate nanowire CdSe/Cu₂Se heterojunctions by masking cation exchange via electron-beam irradiation, such that cation exchange proceeds only in the non-irradiated sections. Interestingly, the heterojunction interfaces are almost atomically sharp, and the adjacent CdSe and Cu₂Se domains exhibit epitaxial relationships. We show that the cation exchange at the CdSe/Cu₂Se interface is only possible if the displaced Cd²⁺ ions can radially out-diffuse to the solution phase. If this exit pathway is blocked, the cation exchange cannot occur. Our technique allows one to transform already contacted single nanowires, and the obtained heterojunction nanowires manifest a noticeable gain in conductance.

Lateral structuring of the chemical composition of nanowires can enhance their functionality for photoconductive devices. Here, the authors fabricate CdSe/Cu₂Se nanowire heterojunctions with atomically sharp interfaces and epitaxial relationships by a masked cation exchange approach.