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Zhang Y, Peng G, Li S, Wu H, Chen K, Wang J, Zhao Z, Lyu T, Yu Y, Zhang C, Zhang Y, Ma C, Guo S, Ding X, Sun J, Liu F, Hu L. Phase interface engineering enables state-of-the-art half-Heusler thermoelectrics. Nat Commun 2024; 15:5978. [PMID: 39013905 DOI: 10.1038/s41467-024-50371-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Accepted: 07/09/2024] [Indexed: 07/18/2024] Open
Abstract
In thermoelectric, phase interface engineering proves effective in reducing the lattice thermal conductivity via interface scattering and amplifying the density-of-states effective mass by energy filtering. However, the indiscriminate introduction of phase interfaces inevitably leads to diminished carrier mobility. Moreover, relying on a singular energy barrier is insufficient for comprehensive filtration of low-energy carriers throughout the entire temperature range. Addressing these challenges, we advocate the establishment of a composite phase interface using atomic layer deposition (ALD) technology. This design aims to effectively decouple the interrelated thermoelectric parameters in ZrNiSn. The engineered coherent dual-interface energy barriers substantially enhance the density-of-states effective mass across the entire temperature spectrum while preser carrier mobility. Simultaneously, the strong interface scattering on phonons is crucial for curtailing lattice thermal conductivity. Consequently, a 40-cycles TiO2 coating on ZrNi1.03Sn0.99Sb0.01 achieves an unprecedented zT value of 1.3 at 873 K. These findings deepen the understanding of coherent composite-phase interface engineering.
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Affiliation(s)
- Yihua Zhang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, China
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Guyang Peng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shuankui Li
- School of Physics and Materials Science, Guangzhou University, Guangzhou, 510006, China
| | - Haijun Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China.
| | - Kaidong Chen
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, China
| | - Jiandong Wang
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhihao Zhao
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Tu Lyu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, China
| | - Yuan Yu
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Chaohua Zhang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, China
| | - Yang Zhang
- Electronic Materials Research Laboratory (Key Lab of Education Ministry) and School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
- Instrumental Analysis Center of Xi'an Jiaotong University, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Chuansheng Ma
- Instrumental Analysis Center of Xi'an Jiaotong University, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Shengwu Guo
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xiangdong Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China.
| | - Jun Sun
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Fusheng Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, China.
| | - Lipeng Hu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, China.
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2
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Kimberly TQ, Wang EYC, Navarro GD, Qi X, Ciesielski KM, Toberer ES, Kauzlarich SM. Into the Void: Single Nanopore in Colloidally Synthesized Bi 2Te 3 Nanoplates with Ultralow Lattice Thermal Conductivity. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:6618-6626. [PMID: 39005532 PMCID: PMC11238327 DOI: 10.1021/acs.chemmater.4c01092] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 06/17/2024] [Accepted: 06/18/2024] [Indexed: 07/16/2024]
Abstract
Bi2Te3 is a well-known thermoelectric material that was first investigated in the 1960s, optimized over decades, and is now one of the highest performing room-temperature thermoelectric materials to-date. Herein, we report on the colloidal synthesis, growth mechanism, and thermoelectric properties of Bi2Te3 nanoplates with a single nanopore in the center. Analysis of the reaction products during the colloidal synthesis reveals that the reaction progresses via a two-step nucleation and epitaxial growth: first of elemental Te nanorods and then the binary Bi2Te3 nanoplate growth. The rates of epitaxial growth can be controlled during the reaction, thus allowing the formation of a single nanopore in the center of the Bi2Te3 nanoplates. The size of the nanopore can be controlled by changing the pH of the reaction solution, where larger pores with diameter of ∼50 nm are formed at higher pH and smaller pores with diameter of ∼16 nm are formed at lower pH. We propose that the formation of the single nanopore is mediated by the Kirkendall effect and thus the reaction conditions allow for the selective control over pore size. Nanoplates have well-defined hexagonal facets as seen in the scanning and transmission electron microscopy images. The single nanopores have a thin amorphous layer at the edge, revealed by transmission electron microscopy. Thermoelectric properties of the pristine and single-nanopore Bi2Te3 nanoplates were measured in the parallel and perpendicular directions. These properties reveal strong anisotropy with a significant reduction to thermal conductivity and increased electrical resistivity in the perpendicular direction due to the higher number of nanoplate and nanopore interfaces. Furthermore, Bi2Te3 nanoplates with a single nanopore exhibit ultralow lattice thermal conductivity values, reaching ∼0.21 Wm-1K-1 in the perpendicular direction. The lattice thermal conductivity was found to be systematically lowered with pore size, allowing for the realization of a thermoelectric figure of merit, zT of 0.75 at 425 K for the largest pore size.
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Affiliation(s)
- Tanner Q Kimberly
- Department of Chemistry, University of California, One Shields Avenue, Davis, California 95616, United States
| | - Evan Y C Wang
- Department of Chemistry, University of California, One Shields Avenue, Davis, California 95616, United States
| | - Gustavo D Navarro
- Department of Chemistry, University of California, One Shields Avenue, Davis, California 95616, United States
| | - Xiao Qi
- The Molecular Foundry, Lawrence Berkeley National Lab, Berkeley, California 94720, United States
| | - Kamil M Ciesielski
- Department of Physics, Colorado School of Mines, 1523 Illinois Street, Golden, Colorado 80401, United States
| | - Eric S Toberer
- Department of Physics, Colorado School of Mines, 1523 Illinois Street, Golden, Colorado 80401, United States
| | - Susan M Kauzlarich
- Department of Chemistry, University of California, One Shields Avenue, Davis, California 95616, United States
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3
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Lu X, Chen Z, Chen G, Liu Z. Metal-organic framework based self-powered devices for human body energy harvesting. Chem Commun (Camb) 2024. [PMID: 38967500 DOI: 10.1039/d4cc02110j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
The shift from traditional bulky electronics to smart wearable devices represents a crucial trend in technological advancement. In recent years, the focus has intensified on harnessing thermal and mechanical energy from human activities to power small wearable electronics. This vision has attracted considerable attention from researchers, with an emphasis on the development of suitable materials that can efficiently convert human body energy into usable electrical form. Metal-organic frameworks (MOFs), with their unique tunable structures, large surface areas, and high porosity, emerge as a promising material category for human body energy harvesting due to their ability to be precisely engineered at the molecular level, which allows for the optimization of their properties to suit specific energy harvesting needs. This article explores the progressive development of MOF materials, highlighting their potential in the realm of self-power devices for wearable applications. It first introduces the typical energy harvesting routes that are particularly suitable for harvesting human body energy, including thermoelectric, triboelectric, and piezoelectric techniques. Then, it delves into various research advances that have demonstrated the efficacy of MOFs in capturing and converting body-generated energy into electrical energy, emphasizing on the conceptual design, device fabrication, and applications in medical health monitoring, human-computer interaction, and motion monitoring. Furthermore, it discusses potential future directions for research in MOF-based self-powered devices and outlines perspectives that could drive breakthroughs in the efficiency and practicality of these devices.
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Affiliation(s)
- Xin Lu
- Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China.
| | - Zhi Chen
- Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China.
| | - Guangming Chen
- Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China.
| | - Zhuoxin Liu
- Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518055, People's Republic of China.
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4
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Son JH, Kim H, Choi Y, Lee H. 3D printed energy devices: generation, conversion, and storage. MICROSYSTEMS & NANOENGINEERING 2024; 10:93. [PMID: 38962473 PMCID: PMC11220016 DOI: 10.1038/s41378-024-00708-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 03/02/2024] [Accepted: 04/16/2024] [Indexed: 07/05/2024]
Abstract
The energy devices for generation, conversion, and storage of electricity are widely used across diverse aspects of human life and various industry. Three-dimensional (3D) printing has emerged as a promising technology for the fabrication of energy devices due to its unique capability of manufacturing complex shapes across different length scales. 3D-printed energy devices can have intricate 3D structures for significant performance enhancement, which are otherwise impossible to achieve through conventional manufacturing methods. Furthermore, recent progress has witnessed that 3D-printed energy devices with micro-lattice structures surpass their bulk counterparts in terms of mechanical properties as well as electrical performances. While existing literature focuses mostly on specific aspects of individual printed energy devices, a brief overview collectively covering the wide landscape of energy applications is lacking. This review provides a concise summary of recent advancements of 3D-printed energy devices. We classify these devices into three functional categories; generation, conversion, and storage of energy, offering insight on the recent progress within each category. Furthermore, current challenges and future prospects associated with 3D-printed energy devices are discussed, emphasizing their potential to advance sustainable energy solutions.
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Affiliation(s)
- Jin-ho Son
- Department of Mechanical Engineering, Institute of Advanced Machines and Design, Seoul National University, Seoul, Republic of Korea
| | - Hongseok Kim
- Department of Mechanical Engineering, Institute of Advanced Machines and Design, Seoul National University, Seoul, Republic of Korea
| | - Yoonseob Choi
- Department of Mechanical Engineering, Institute of Advanced Machines and Design, Seoul National University, Seoul, Republic of Korea
| | - Howon Lee
- Department of Mechanical Engineering, Institute of Advanced Machines and Design, Seoul National University, Seoul, Republic of Korea
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5
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Yang H, Wu L, Feng X, Wang H, Huang X, Duan B, Li G, Zhai P, Zhang Q. Optimization of Mechanical and Thermoelectric Properties of SnTe-Based Semiconductors by Mn Alloying Modulated Precipitation Evolution. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310692. [PMID: 38243875 DOI: 10.1002/smll.202310692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 01/02/2024] [Indexed: 01/22/2024]
Abstract
Multiscale defects engineering offers a promising strategy for synergistically enhancing the thermoelectric and mechanical properties of thermoelectric semiconductors. However, the specific impact of individual defects, in particular precipitation, on mechanical properties remains ambiguous. In this work, the mechanical and thermoelectric properties of Sn1.03- xMnxTe (x = 0-0.30) semiconductors are systematically studied. Mn-alloying induces dense dislocations and Mn nano-precipitates, resulting in an enhanced compressive strength with x increased to 0.15. Quantitative calculations are performed to assess the strengthening contributions including grain boundary, solid solution, dislocation, and precipitation strengthening. Due to the dominant contribution of precipitation strengthening, the yield strength of the x = 0.10 sample is improved by ≈74.5% in comparison to the Mn-free Sn1.03Te. For x ≥ 0.15, numerous MnTe precipitates lead to a synergistic enhancement of strength-ductility. In addition, multiscale defects induced by Mn alloying can scatter phonons over a wide frequency spectrum. The peak figure of merit ZT of ≈1.3 and an ultralow lattice thermal conductivity of ≈0.35 Wm-1 K-1 are obtained at 873 K for x = 0.10 and x = 0.30 samples respectively. This work reveals tha precipitation evolution optimizes the mechanical and thermoelectric properties of Sn1.03- xMnxTe semiconductors, which may hold potential implications for other thermoelectric systems.
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Affiliation(s)
- Houjiang Yang
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Luoqi Wu
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Xiaobin Feng
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Hongtao Wang
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Xiege Huang
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Bo Duan
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Guodong Li
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Pengcheng Zhai
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
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6
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Dong J, Liu Y, Li Z, Xie H, Jiang Y, Wang H, Tan XY, Suwardi A, Zhou X, Li JF, Wolverton C, Dravid VP, Yan Q, Kanatzidis MG. High Thermoelectric Performance in Rhombohedral GeSe-LiBiTe 2. J Am Chem Soc 2024; 146:17355-17364. [PMID: 38870542 DOI: 10.1021/jacs.4c04453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
GeSe, an analogue of SnSe, shows promise in exhibiting exceptional thermoelectric performance in the Pnma phase. The constraints on its dopability, however, pose challenges in attaining optimal carrier concentrations and improving ZT values. This study demonstrates a crystal structure evolution strategy for achieving highly doped samples and promising ZTs in GeSe via LiBiTe2 alloying. A rhombohedral phase (R3m) can be stabilized in the GeSe-LiBiTe2 system, further evolving into a cubic (Fm3̅m) phase with a rising temperature. The band structures of GeSe-LiBiTe2 in the rhombohedral and cubic phases feature a similar multiple-valley energy-converged valence band of L and Σ bands. The observed high carrier concentration (∼1020 cm-3) reflects the effective convergence of these bands, enabling a high density-of-states effective mass and an enhanced power factor. Moreover, a very low lattice thermal conductivity of 0.6-0.5 W m-1 K-1 from 300 to 723 K is achieved in 0.9GeSe-0.1LiBiTe2, approaching the amorphous limit value. This remarkably low lattice thermal conductivity is related to phonon scattering from point defects, planar vacancies, and ferroelectric instability-induced low-energy Einstein oscillators. Finally, a maximum ZT value of 1.1 to 1.3 at 723 K is obtained, with a high average ZT value of over 0.8 (400-723 K) in 0.9GeSe-0.1LiBiTe2 samples. This study establishes a viable route for tailoring crystal structures to significantly improve the performance of GeSe-related compounds.
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Affiliation(s)
- Jinfeng Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yukun Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Zhi Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Hongyao Xie
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yilin Jiang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Honghui Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing 401331, China
| | - Xian Yi Tan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Ady Suwardi
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong SAR, China
| | - Xiaoyuan Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing 401331, China
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Christopher Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Qingyu Yan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
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Fiedler C, Calcabrini M, Liu Y, Ibáñez M. Unveiling Crucial Chemical Processing Parameters Influencing the Performance of Solution-Processed Inorganic Thermoelectric Materials. Angew Chem Int Ed Engl 2024; 63:e202402628. [PMID: 38623865 DOI: 10.1002/anie.202402628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Revised: 03/29/2024] [Accepted: 04/15/2024] [Indexed: 04/17/2024]
Abstract
Production of thermoelectric materials from solution-processed particles involves the synthesis of particles, their purification and densification into pelletized material. Chemical changes that occur during each one of these steps render them performance determining. Particularly the purification steps, bypassed in conventional solid-state synthesis, are the cause for large discrepancies among similar solution-processed materials. In present work, the investigation focuses on a water-based surfactant free solution synthesis of SnSe, a highly relevant thermoelectric material. We show and rationalize that the number of leaching steps, purification solvent, annealing, and annealing atmosphere have significant influence on the Sn : Se ratio and impurity content in the powder. Such compositional changes that are undetectable by conventional characterization techniques lead to distinct consolidated materials with different types and concentration of defects. Additionally, the profound effect on their transport properties is demonstrated. We emphasize that understanding the chemistry and identifying key chemical species and their role throughout the process is paramount for optimizing material performance. Furthermore, we aim to demonstrate the necessity of comprehensive reporting of these steps as a standard practice to ensure material reproducibility.
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Affiliation(s)
- Christine Fiedler
- Institute of Science and Technology Austria, Am Campus 1, 3400, Klosterneuburg, Austria
| | - Mariano Calcabrini
- Institute of Science and Technology Austria, Am Campus 1, 3400, Klosterneuburg, Austria
| | - Yu Liu
- Institute of Science and Technology Austria, Am Campus 1, 3400, Klosterneuburg, Austria
- School of Chemistry and Chemical Engineering, Hefei University of Technology, 230009, Hefei, China
| | - Maria Ibáñez
- Institute of Science and Technology Austria, Am Campus 1, 3400, Klosterneuburg, Austria
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8
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Sarkar D, Bhui A, Maria I, Dutta M, Biswas K. Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance. Chem Soc Rev 2024; 53:6100-6149. [PMID: 38717749 DOI: 10.1039/d4cs00038b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
The long-range periodic atomic arrangement or the lack thereof in solids typically dictates the magnitude and temperature dependence of their lattice thermal conductivity (κlat). Compared to crystalline materials, glasses exhibit a much-suppressed κlat across all temperatures as the phonon mean free path reaches parity with the interatomic distances therein. While the occurrence of such glass-like thermal transport in crystalline solids captivates the scientific community with its fundamental inquiry, it also holds the potential for profoundly impacting the field of thermoelectric energy conversion. Therefore, efficient manipulation of thermal transport and comprehension of the microscopic mechanisms dictating phonon scattering in crystalline solids are paramount. As quantized lattice vibrations (i.e., phonons) drive κlat, atomistic insights into the chemical bonding characteristics are crucial to have informed knowledge about their origins. Recently, it has been observed that within the highly symmetric 'averaged' crystal structures, often there are hidden locally asymmetric atomic motifs (within a few Å), which exert far-reaching influence on phonon transport. Phenomena such as local atomic off-centering, atomic rattling or tunneling, liquid-like atomic motion, site splitting, local ordering, etc., which arise within a few Å scales, are generally found to drastically disrupt the passage of heat carrying phonons. Despite their profound implication(s) for phonon dynamics, they are often overlooked by traditional crystallographic techniques. In this review, we provide a brief overview of the fundamental aspects of heat transport and explore the status quo of innately low thermally conductive crystalline solids, wherein the phonon dynamics is majorly governed by local structural phenomena. We also discuss advanced techniques capable of characterizing the crystal structure at the sub-atomic level. Subsequently, we delve into the emergent new ideas with examples linked to local crystal structure and lattice dynamics. While discussing the implications of the local structure for thermal conductivity, we provide the state-of-the-art examples of high-performance thermoelectric materials. Finally, we offer our viewpoint on the experimental and theoretical challenges, potential new paths, and the integration of novel strategies with material synthesis to achieve low κlat and realize high thermoelectric performance in crystalline solids via local structure designing.
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Affiliation(s)
- Debattam Sarkar
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Animesh Bhui
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Ivy Maria
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Moinak Dutta
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Kanishka Biswas
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
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9
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Cheng H, Wang Z, Guo Z, Lou J, Han W, Rao J, Peng F. Cellulose-based thermoelectric composites: A review on mechanism, strategies and applications. Int J Biol Macromol 2024:132908. [PMID: 38942663 DOI: 10.1016/j.ijbiomac.2024.132908] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 05/16/2024] [Accepted: 06/02/2024] [Indexed: 06/30/2024]
Abstract
The ever-increasing demand for energy and environmental concerns have driven scientists to look for renewable and eco-friendly alternatives. Bio-based thermoelectric (TE) composite materials provide a promising solution to alleviate the global energy crisis due to their direct conversion of heat to electricity. Cellulose, the most abundant bio-polymer on earth with fascinating structure and desirable physicochemical properties, provides an excellent alternative matrix for TE materials. Here, recent studies on cellulose-based TE composites are comprehensively summarized. The fundamentals of TE materials, including TE effects, TE devices, and evaluation on conversion efficiency of TE materials are briefly introduced at the beginning. Then, the state-of-the-art methods for constructing cellulose-based TE composites in the forms of paper/film, aerogel, liquid, and hydrogel, are highlighted. TE performances of these composites are also compared. Following that, applications of cellulose-based TE composites in the fields of energy storage (e.g., supercapacitors) and sensing (e.g., self-powered sensors) are presented. Finally, opportunities and challenges that need investigation toward further development of cellulose-based TE composites are discussed.
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Affiliation(s)
- Heli Cheng
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, Hubei University of Technology, Wuhan 430068, China
| | - Zhenyu Wang
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, Hubei University of Technology, Wuhan 430068, China
| | - Zejiang Guo
- Hubei Provincial Key Laboratory of Green Materials for Light Industry, Hubei University of Technology, Wuhan 430068, China
| | - Jiang Lou
- State Key Laboratory of Biobased Material and Green Papermaking, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China
| | - Wenjia Han
- State Key Laboratory of Biobased Material and Green Papermaking, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China
| | - Jun Rao
- Beijing Key Laboratory of Lignocellulosic Chemistry, MOE Engineering Research Center of Forestry Biomass Materials and Bioenergy, Beijing Forestry University, Beijing 100083, China
| | - Feng Peng
- Beijing Key Laboratory of Lignocellulosic Chemistry, MOE Engineering Research Center of Forestry Biomass Materials and Bioenergy, Beijing Forestry University, Beijing 100083, China; State Key Laboratory of Efficient Production of Forest Resources, Beijing 100083, China
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10
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Wang ZY, Guo J, Wang Y, Zhang YX, Feng J, Ge ZH. Realizing High Thermoelectric Properties in Bi 2S 3 Bulk via Band Engineering and Nanorods Compositing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310306. [PMID: 38143297 DOI: 10.1002/smll.202310306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 12/14/2023] [Indexed: 12/26/2023]
Abstract
Bismuth sulfide is a promising thermoelectric material because of its low cost and toxicity; however, its low electrical conductivity limits its thermoelectric properties. In this study, Bi2S3+x wt% HfCl4 (x = 0, 0.25, 0.5, 0.75, and 1.0) bulk samples are fabricated using a combination of melting and spark plasma sintering. The microstructures, electronic structures, and thermoelectric properties of the composites are characterized. The results of electronic structure calculations show that doping with HfCl4 produces an impurity energy level that narrows the bandgap and allows the Fermi energy level to enter the conduction band, leading to a favorable increase in carrier concentration. By regulating the HfCl4 doping concentration, the electrical conductivity of the 0.75 wt% doped sample reaches 253 Scm-1 at 423 K and its maximum ZT value is 0.47 at 673 K. Moreover, the sample is compounded with Bi2S3 nanorods prepared by the hydrothermal method, reducing thermal conductivity by 30% due to the introduction of additional interfaces and pores. This resulted in a final ZT value of 0.61 at 673 K, which is approximately eight times higher than that of pure Bi2S3. This step-by-step optimization approach provides a valuable methodology for enhancing the performance of other thermoelectric material systems.
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Affiliation(s)
- Zi-Yuan Wang
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
- Southwest United Graduate School, Kunming, 650092, China
| | - Jun Guo
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Yu Wang
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Yi-Xing Zhang
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Jing Feng
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
- Southwest United Graduate School, Kunming, 650092, China
| | - Zhen-Hua Ge
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
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11
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Wu G, Zhang Q, Tan X, Fu Y, Guo Z, Zhang Z, Sun Q, Liu Y, Shi H, Li J, Noudem JG, Wu J, Liu GQ, Sun P, Hu H, Jiang J. Bi 2Te 3-Based Thermoelectric Modules for Efficient and Reliable Low-Grade Heat Recovery. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400285. [PMID: 38613131 DOI: 10.1002/adma.202400285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2024] [Revised: 04/01/2024] [Indexed: 04/14/2024]
Abstract
Bismuth-telluride-based alloy has long been considered as the most promising candidate for low-grade waste heat power generation. However, optimizing the thermoelectric performance of n-type Bi2Te3 is more challenging than that of p-type counterparts due to its greater sensitivity to texture, and thus limits the advancement of thermoelectric modules. Herein, the thermoelectric performance of n-type Bi2Te3 is enhanced by incorporating a small amount of CuGaTe2, resulting in a peak ZT of 1.25 and a distinguished average ZT of 1.02 (300-500 K). The decomposed Cu+ strengthens interlayer interaction, while Ga+ optimizes carrier concentration within an appropriate range. Simultaneously, the emerged numerous defects, such as small-angle grain boundaries, twin boundaries, and dislocations, significantly suppresses the lattice thermal conductivity. Based on the size optimization by finite element modelling, the constructed thermoelectric module yields a high conversion efficiency of 6.9% and output power density of 0.31 W cm-2 under a temperature gradient of 200 K. Even more crucially, the efficiency and output power little loss after subjecting the module to 40 thermal cycles lasting for 6 days. This study demonstrates the efficient and reliable Bi2Te3-based thermoelectric modules for broad applications in low-grade heat harvest.
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Affiliation(s)
- Gang Wu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qiang Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaojian Tan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuntian Fu
- State Key Laboratory for Modification of Chemical Fibers and Polymer, Materials & College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Zhe Guo
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zongwei Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qianqian Sun
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yan Liu
- Research Institute of Nuclear Power Operation, Wuhan, 430223, China
| | - Huilie Shi
- Research Institute of Nuclear Power Operation, Wuhan, 430223, China
| | - Jingsong Li
- Research Institute of Nuclear Power Operation, Wuhan, 430223, China
| | - Jacques G Noudem
- Normandie University, ENSICAEN, UNICAEN, CNRS, CRISMAT, Caen, 14000, France
| | - Jiehua Wu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Guo-Qiang Liu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peng Sun
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoyang Hu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Jun Jiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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12
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Jin K, Yang Z, Fu L, Lou Y, Xu P, Huang M, Shi Z, Xu B. All-Inorganic Halide Perovskites Boost High-Ranged Figure-of-Merit in Bi 0.4Sb 1.6Te 3 for Thermoelectric Cooling and Low-Grade Heat Recovery. ACS NANO 2024; 18:13924-13938. [PMID: 38743703 DOI: 10.1021/acsnano.4c03926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The all-inorganic halide perovskite CsPbX3 (X = Cl, Br, or I) offers various advantages, such as tunable electronic structure and high carrier mobility. However, its potential application in thermoelectric materials remains underexplored. In this study, we propose a simple yet effective method to synthesize a CsPbX3/Bi0.4Sb1.6Te3 (BST) nanocomposite by sintering a uniformly mixed raw powder. The intrinsic excitation of the BST system is suppressed by exploiting the rich phase structure and tunable electrical transport properties of CsPbX3, and the thermoelectric properties were synergistically optimized. Notably, for CsPbI3, its phase-transition-induced dislocation arrays together with low group velocities drastically reduce thermal conductivity. As a result, the composite achieves an ultrahigh average figure-of-merit (ZT) of 1.4 from 298 to 523 K. The two-pair TE module demonstrates a superior conversion efficiency of 7.3%. This study expands the potential applications of inorganic halide perovskites, into thermoelectrics.
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Affiliation(s)
- Kangpeng Jin
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhiya Yang
- Ranney School, 235 Hope Road, Tinton Falls, New Jersey 07724, United States
| | - Liangwei Fu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yue Lou
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Pengfei Xu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Ming Huang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhan Shi
- College of Chemistry, Jilin University, Changchun 130012, China
| | - Biao Xu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
- State Key Laboratory of Coordination Chemistry, Nanjing University, Nanjing 210093, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, China
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13
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Quinn R, Biswas R, Bos JWG. Alloying and Doping Control in the Layered Metal Phosphide Thermoelectric CaCuP. ACS APPLIED ELECTRONIC MATERIALS 2024; 6:2879-2888. [PMID: 38828033 PMCID: PMC11137819 DOI: 10.1021/acsaelm.3c00828] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Accepted: 08/31/2023] [Indexed: 06/05/2024]
Abstract
We recently identified CaCuP as a potential low cost, low density thermoelectric material, achieving zT = 0.5 at 792 K. Its performance is limited by a large lattice thermal conductivity, κL, and by intrinsically large p-type doping levels. In this paper, we address the thermal and electronic tunability of CaCuP. Isovalent alloying with As is possible over the full solid solution range in the CaCuP1-xAsx series. This leads to a reduction in κL due to mass fluctuations but also to a detrimental increase in p-type doping due to increasing Cu vacancies, which prevents zT improvement. Phase boundary mapping, exploiting small deviations from 1:1:1 stoichiometry, was used to explore doping tunability, finding increasing p-type doping to be much easier than decreasing the doping level. Calculation of the Lorenz number within the single parabolic band approximation leads to an unrealistic low κL for highly doped samples consistent with the multiband behavior in these materials. Overall, CaCuP and slightly Cu-enriched CaCu1.02P yield the best performance, with zT approaching 0.6 at 873 K.
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Affiliation(s)
- Robert
J. Quinn
- Institute
of Chemical Sciences, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, U.K.
| | - Rajan Biswas
- EaStCHEM
School of Chemistry, University of St Andrews, North Haugh, St Andrews KY16 9ST, U.K.
| | - Jan-Willem G. Bos
- EaStCHEM
School of Chemistry, University of St Andrews, North Haugh, St Andrews KY16 9ST, U.K.
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14
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Nan B, Li M, Zhang Y, Xiao K, Lim KH, Chang C, Han X, Zuo Y, Li J, Arbiol J, Llorca J, Ibáñez M, Cabot A. Engineering of Thermoelectric Composites Based on Silver Selenide in Aqueous Solution and Ambient Temperature. ACS APPLIED ELECTRONIC MATERIALS 2024; 6:2807-2815. [PMID: 38828037 PMCID: PMC11137807 DOI: 10.1021/acsaelm.3c00055] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Accepted: 04/24/2023] [Indexed: 06/05/2024]
Abstract
The direct, solid state, and reversible conversion between heat and electricity using thermoelectric devices finds numerous potential uses, especially around room temperature. However, the relatively high material processing cost limits their real applications. Silver selenide (Ag2Se) is one of the very few n-type thermoelectric (TE) materials for room-temperature applications. Herein, we report a room temperature, fast, and aqueous-phase synthesis approach to produce Ag2Se, which can be extended to other metal chalcogenides. These materials reach TE figures of merit (zT) of up to 0.76 at 380 K. To improve these values, bismuth sulfide (Bi2S3) particles also prepared in an aqueous solution are incorporated into the Ag2Se matrix. In this way, a series of Ag2Se/Bi2S3 composites with Bi2S3 wt % of 0.5, 1.0, and 1.5 are prepared by solution blending and hot-press sintering. The presence of Bi2S3 significantly improves the Seebeck coefficient and power factor while at the same time decreasing the thermal conductivity with no apparent drop in electrical conductivity. Thus, a maximum zT value of 0.96 is achieved in the composites with 1.0 wt % Bi2S3 at 370 K. Furthermore, a high average zT value (zTave) of 0.93 in the 300-390 K range is demonstrated.
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Affiliation(s)
- Bingfei Nan
- Catalonia
Institute for Energy Research−IREC, Sant Adrià del Besòs, Barcelona 08930, Spain
- Departament
d′Enginyeria Electrònica i Biomèdica, Universitat de Barcelona, Barcelona 08028, Catalonia, Spain
| | - Mengyao Li
- Catalonia
Institute for Energy Research−IREC, Sant Adrià del Besòs, Barcelona 08930, Spain
- School
of Physics and Microelectronics, Zhengzhou
University, Zhengzhou 450052, China
| | - Yu Zhang
- Department
of Materials Science and Engineering, Pennsylvania
State University, State
College, Pennsylvania 16802, United Sates
| | - Ke Xiao
- Catalonia
Institute for Energy Research−IREC, Sant Adrià del Besòs, Barcelona 08930, Spain
- Departament
d′Enginyeria Electrònica i Biomèdica, Universitat de Barcelona, Barcelona 08028, Catalonia, Spain
| | - Khak Ho Lim
- Institute
of Zhejiang University−Quzhou, 99 Zheda Road, Quzhou 324000, Zhejiang, P.R. China
- College of
Chemical and Biological Engineering, Zhejiang
University, 38 Zheda Road, Hangzhou 310007, Zhejiang, P.R. China
| | - Cheng Chang
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, Klosterneuburg 3400, Austria
- School
of Materials Science and Engineering, Beihang
University, Beijing 100191, China
| | - Xu Han
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), Campus UAB, Bellaterra, Barcelona 08193, Catalonia, Spain
| | - Yong Zuo
- Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Junshan Li
- Institute
for Advanced Study, Chengdu University, Chengdu 610106, China
| | - Jordi Arbiol
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), Campus UAB, Bellaterra, Barcelona 08193, Catalonia, Spain
- ICREA, Pg. Lluís
Companys 23, Barcelona 08010, Catalonia, Spain
| | - Jordi Llorca
- Institute
of Energy Technologies, Department of Chemical Engineering and Barcelona
Research Center in Multiscale Science and Engineering, Barcelona East
School of Engineering, Universitat Politècnica
de Catalunya, Barcelona 08019, Catalonia, Spain
| | - Maria Ibáñez
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, Klosterneuburg 3400, Austria
| | - Andreu Cabot
- Catalonia
Institute for Energy Research−IREC, Sant Adrià del Besòs, Barcelona 08930, Spain
- ICREA, Pg. Lluís
Companys 23, Barcelona 08010, Catalonia, Spain
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15
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Prado-Gonjal J, García-Calvo E, Gainza J, Durá OJ, Dejoie C, Nemes NM, Martínez JL, Alonso JA, Serrano-Sánchez F. Optimizing Thermoelectric Properties through Compositional Engineering in Ag-Deficient AgSbTe 2 Synthesized by Arc Melting. ACS APPLIED ELECTRONIC MATERIALS 2024; 6:2969-2977. [PMID: 38828031 PMCID: PMC11138145 DOI: 10.1021/acsaelm.3c01653] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Revised: 02/18/2024] [Accepted: 02/18/2024] [Indexed: 06/05/2024]
Abstract
Thermoelectric materials offer a promising avenue for energy management, directly converting heat into electrical energy. Among them, AgSbTe2 has gained significant attention and continues to be a subject of research at further improving its thermoelectric performance and expanding its practical applications. This study focuses on Ag-deficient Ag0.7Sb1.12Te2 and Ag0.7Sb1.12Te1.95Se0.05 materials, examining the impact of compositional engineering within the AgSbTe2 thermoelectric system. These materials have been rapidly synthesized using an arc-melting technique, resulting in the production of dense nanostructured pellets. Detailed analysis through scanning electron microscopy (SEM) reveals the presence of a layered nanostructure, which significantly influences the thermoelectric properties of these materials. Synchrotron X-ray diffraction reveals significant changes in the lattice parameters and atomic displacement parameters (ADPs) that suggest a weakening of bond order in the structure. The thermoelectric characterization highlights the enhanced power factor of Ag-deficient materials that, combined with the low glass-like thermal conductivity, results in a significant improvement in the figure of merit, achieving zT values of 1.25 in Ag0.7Sb1.12Te2 and 1.01 in Ag0.7Sb1.12Te1.95Se0.05 at 750 K.
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Affiliation(s)
- Jesús Prado-Gonjal
- Departamento
de Química Inorgánica, Universidad
Complutense de Madrid, Ciudad Universitaria
s/n, Madrid E-28040, Spain
| | - Elena García-Calvo
- Departamento
de Química Inorgánica, Universidad
Complutense de Madrid, Ciudad Universitaria
s/n, Madrid E-28040, Spain
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid E-28049, Spain
| | - Javier Gainza
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid E-28049, Spain
| | - Oscar J. Durá
- Departamento
de Física Aplicada, Universidad de
Castilla-La Mancha, E-13071 Ciudad Real, Spain
| | - Catherine Dejoie
- European
Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Norbert M. Nemes
- GFMC,
Departamento de Física de Materiales, Universidad Complutense de Madrid, Madrid E-28040, Spain
| | - José Luis Martínez
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid E-28049, Spain
| | - José Antonio Alonso
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid E-28049, Spain
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16
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Cheng R, Ge H, Huang S, Xie S, Tong Q, Sang H, Yan F, Zhu L, Wang R, Liu Y, Hong M, Uher C, Zhang Q, Liu W, Tang X. Unraveling electronic origins for boosting thermoelectric performance of p-type (Bi,Sb) 2Te 3. SCIENCE ADVANCES 2024; 10:eadn9959. [PMID: 38787957 PMCID: PMC11122684 DOI: 10.1126/sciadv.adn9959] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Accepted: 04/22/2024] [Indexed: 05/26/2024]
Abstract
P-type Bi2-xSbxTe3 compounds are crucial for thermoelectric applications at room temperature, with Bi0.5Sb1.5Te3 demonstrating superior performance, attributed to its maximum density-of-states effective mass (m*). However, the underlying electronic origin remains obscure, impeding further performance optimization. Herein, we synthesized high-quality Bi2-xSbxTe3 (00 l) films and performed comprehensive angle-resolved photoemission spectroscopy (ARPES) measurements and band structure calculations to shed light on the electronic structures. ARPES results directly evidenced that the band convergence along the [Formula: see text]-[Formula: see text] direction contributes to the maximum m* of Bi0.5Sb1.5Te3. Moreover, strategic manipulation of intrinsic defects optimized the hole density of Bi0.5Sb1.5Te3, allowing the extra valence band along [Formula: see text]-[Formula: see text] to contribute to the electrical transport. The synergy of the above two aspects documented the electronic origins of the Bi0.5Sb1.5Te3's superior performance that resulted in an extraordinary power factor of ~5.5 milliwatts per meter per square kelvin. The study offers valuable guidance for further performance optimization of p-type Bi2-xSbxTe3.
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Affiliation(s)
- Rui Cheng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Haoran Ge
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Shengpu Huang
- Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044, China
| | - Sen Xie
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Qiwei Tong
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Hao Sang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Fan Yan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Liangyu Zhu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Rui Wang
- Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044, China
| | - Yong Liu
- School of Physics and Technology and The Key Laboratory of Artificial Micro/Nano Structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Min Hong
- Centre for Future Materials, and School of Engineering, University of Southern Queensland, Springfield Central, Brisbane, Queensland 4300, Australia
| | - Ctirad Uher
- Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Wei Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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17
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Oueldna N, Sabi N, Aziam H, Trabadelo V, Ben Youcef H. High-entropy materials for thermoelectric applications: towards performance and reliability. MATERIALS HORIZONS 2024; 11:2323-2354. [PMID: 38700415 DOI: 10.1039/d3mh02181e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
High-entropy materials (HEMs), including alloys, ceramics and other entropy-stabilized compounds, have attracted considerable attention in different application fields. This is due to their intrinsically unique concept and properties, such as innovative chemical composition, structural characteristics, and correspondingly improved functional properties. By establishing an environment with different chemical compositions, HEMs as novel materials possessing superior attributes present unparalleled prospects when compared with their conventional counterparts. Notably, great attention has been paid to investigating HEMs such as thermoelectrics (TE), especially for application in energy-related fields. In this review, we started with the basic definitions of TE fundamentals, the existing thermoelectric materials (TEMs), and the strategies adopted for their improvement. Moreover, we introduced HEMs, summarized the core effects of high-entropy (HE), and emphasized how HE will open up new avenues for designing high-entropy thermoelectric materials (HETEMs) with promising performance and high reliability. Through selecting and analyzing recent scientific publications, this review outlines recent scientific breakthroughs and the associated challenges in the field of HEMs for TE applications. Finally, we classified the different types of HETEMs based on their structure and properties and discussed recent advances in the literature.
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Affiliation(s)
- Nouredine Oueldna
- Applied Chemistry and Engineering Research Centre of Excellence (ACER CoE), Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir, 43150, Morocco.
| | - Noha Sabi
- High Throughput Multidisciplinary Research (HTMR), Mohammed VI Polytechnic University, Lot 660 Hay Moulay Rachid, Ben Guerir, 43150, Morocco
| | - Hasna Aziam
- High Throughput Multidisciplinary Research (HTMR), Mohammed VI Polytechnic University, Lot 660 Hay Moulay Rachid, Ben Guerir, 43150, Morocco
| | - Vera Trabadelo
- High Throughput Multidisciplinary Research (HTMR), Mohammed VI Polytechnic University, Lot 660 Hay Moulay Rachid, Ben Guerir, 43150, Morocco
| | - Hicham Ben Youcef
- Applied Chemistry and Engineering Research Centre of Excellence (ACER CoE), Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir, 43150, Morocco.
- High Throughput Multidisciplinary Research (HTMR), Mohammed VI Polytechnic University, Lot 660 Hay Moulay Rachid, Ben Guerir, 43150, Morocco
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18
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Li D, Shi XL, Zhu J, Cao T, Ma X, Li M, Han Z, Feng Z, Chen Y, Wang J, Liu WD, Zhong H, Li S, Chen ZG. High-performance flexible p-type Ce-filled Fe 3CoSb 12 skutterudite thin film for medium-to-high-temperature applications. Nat Commun 2024; 15:4242. [PMID: 38762562 PMCID: PMC11102547 DOI: 10.1038/s41467-024-48677-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Accepted: 05/10/2024] [Indexed: 05/20/2024] Open
Abstract
P-type Fe3CoSb12-based skutterudite thin films are successfully fabricated, exhibiting high thermoelectric performance, stability, and flexibility at medium-to-high temperatures, based on preparing custom target materials and employing advanced pulsed laser deposition techniques to address the bonding challenge between the thin films and high-temperature flexible polyimide substrates. Through the optimization of fabrication processing and nominal doping concentration of Ce, the thin films show a power factor of >100 μW m-1 K-2 and a ZT close to 0.6 at 653 K. After >2000 bending cycle tests at a radius of 4 mm, only a 6 % change in resistivity can be observed. Additionally, the assembled p-type Fe3CoSb12-based flexible device exhibits a power density of 135.7 µW cm-2 under a temperature difference of 100 K with the hot side at 623 K. This work fills a gap in the realization of flexible thermoelectric devices in the medium-to-high-temperature range and holds significant practical application value.
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Affiliation(s)
- Dou Li
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Xiao-Lei Shi
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Jiaxi Zhu
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Tianyi Cao
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Xiao Ma
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Meng Li
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Zhuokun Han
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Zhenyu Feng
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yixing Chen
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jianyuan Wang
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wei-Di Liu
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Hong Zhong
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
| | - Shuangming Li
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
| | - Zhi-Gang Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia.
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19
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Gong Y, Dou W, Lu B, Zhang X, Zhu H, Ying P, Zhang Q, Liu Y, Li Y, Huang X, Iqbal MF, Zhang S, Li D, Zhang Y, Wu H, Tang G. Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals. Nat Commun 2024; 15:4231. [PMID: 38762611 PMCID: PMC11102544 DOI: 10.1038/s41467-024-48635-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Accepted: 05/09/2024] [Indexed: 05/20/2024] Open
Abstract
N-type polycrystalline SnSe is considered as a highly promising candidates for thermoelectric applications due to facile processing, machinability, and scalability. However, existing efforts do not enable a peak ZT value exceeding 2.0 in n-type polycrystalline SnSe. Here, we realized a significant ZT enhancement by leveraging the synergistic effects of divacancy defect and introducing resonance level into the conduction band. The resonance level and increased density of states resulting from tungsten boost the Seebeck coefficient. The combination of the enhanced electrical conductivity (achieved by increasing carrier concentration through WCl6 doping and Se vacancies) and large Seebeck coefficient lead to a high power factor. Microstructural analyses reveal that the co-existence of divacancy defects (Se vacancies and Sn vacancies) and endotaxial W- and Cl-rich nanoprecipitates scatter phonons effectively, resulting in ultralow lattice conductivity. Ultimately, a record-high peak ZT of 2.2 at 773 K is achieved in n-type SnSe0.92 + 0.03WCl6.
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Affiliation(s)
- Yaru Gong
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Wei Dou
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Bochen Lu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China
| | - Xuemei Zhang
- School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan, Ningxia, China
| | - He Zhu
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Pan Ying
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Qingtang Zhang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Yuqi Liu
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Yanan Li
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Xinqi Huang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Muhammad Faisal Iqbal
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Shihua Zhang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Di Li
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, China
| | - Yongsheng Zhang
- Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu, Shandong Province, China.
| | - Haijun Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China.
| | - Guodong Tang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China.
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20
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Acharyya P, Pal K, Zhang B, Barbier T, Prestipino C, Boullay P, Raveau B, Lemoine P, Malaman B, Shen X, Vaillant M, Renaud A, Uberuaga BP, Candolfi C, Zhou X, Guilmeau E. Structure Low Dimensionality and Lone-Pair Stereochemical Activity: the Key to Low Thermal Conductivity in the Pb-Sn-S System. J Am Chem Soc 2024; 146:13477-13487. [PMID: 38690585 DOI: 10.1021/jacs.4c02893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Recently, metal sulfides have begun to receive attention as potential cost-effective materials for thermoelectric applications beyond optoelectronic and photovoltaic devices. Herein, based on a comparative analysis of the structural and transport properties of 2D PbSnS2 and 1D PbSnS3, we demonstrate that the intrinsic effects that govern the low lattice thermal conductivity (κL) of these sulfides originate from the combination of the low dimensionality of their crystal structures with the stereochemical activity of the lone-pair electrons of cations. The presence of weak bonds in these materials, responsible for phonon scattering, results in inherently low κL of 1.0 W/m K in 1D PbSnS3 and 0.6 W/m K in 2D PbSnS2 at room temperature. However, the nature of the thermal transport is quite distinct. 1D PbSnS3 exhibits a higher thermal conductivity with a crystalline-like peak at low temperatures, while 2D PbSnS2 demonstrates glassy thermal conductivity in the entire temperature range investigated. First-principles density functional theory calculations reveal that the presence of antibonding states below the Fermi level, especially in PbSnS2, contributes to the very low κL. In addition, the calculated phonon dispersions exhibit very soft acoustic phonon branches that give rise to soft lattices and very low speeds of sounds.
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Affiliation(s)
- Paribesh Acharyya
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Koushik Pal
- Dept. of Physics, Indian Institute of Technology Kanpur, Kanpur 208016, India
- Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos 87545, United States
| | - Bin Zhang
- College of Physics and Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing 401331, China
- Analytical and Testing Center of Chongqing University, Chongqing 401331, China
| | - Tristan Barbier
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | | | - Philippe Boullay
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Bernard Raveau
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Pierric Lemoine
- Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, 54011 Nancy, France
| | - Bernard Malaman
- Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, 54011 Nancy, France
| | - Xingchen Shen
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Maxime Vaillant
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
| | - Adèle Renaud
- Univ Rennes, ISCR - UMR 6226, CNRS, F-35000 Rennes, France
| | - Blas P Uberuaga
- Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos 87545, United States
| | - Christophe Candolfi
- Institut Jean Lamour, UMR 7198 CNRS - Université de Lorraine, 54011 Nancy, France
| | - Xiaoyuan Zhou
- College of Physics and Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing 401331, China
- Analytical and Testing Center of Chongqing University, Chongqing 401331, China
| | - Emmanuel Guilmeau
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, 14000 Caen, France
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21
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Li Z, Pal K, Lee H, Wolverton C, Xia Y. Electron-Phonon Interaction Mediated Gigantic Enhancement of Thermoelectric Power Factor Induced by Topological Phase Transition. NANO LETTERS 2024; 24:5816-5823. [PMID: 38684443 DOI: 10.1021/acs.nanolett.4c01008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
We propose an effective strategy to significantly enhance the thermoelectric power factor (PF) of a series of 2D semimetals and semiconductors by driving them toward a topological phase transition (TPT). Employing first-principles calculations with an explicit consideration of electron-phonon interactions, we analyze the electronic transport properties of germanene across the TPT by applying hydrogenation and biaxial strain. We reveal that the nontrivial semimetal phase, hydrogenated germanene with 8% biaxial strain, achieves a considerable 4-fold PF enhancement, attributed to the highly asymmetric electronic structure and semimetallic nature of the nontrivial phase. We extend the strategy to another two representative 2D materials (stanene and HgSe) and observe a similar trend, with a marked 7-fold and 5-fold increase in PF, respectively. The wide selection of functional groups, universal applicability of biaxial strain, and broad spectrum of 2D semimetals and semiconductors render our approach highly promising for designing novel 2D materials with superior thermoelectric performance.
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Affiliation(s)
- Zhi Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Koushik Pal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, UP 208016, India
| | - Huiju Lee
- Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, United States
| | - Chris Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Yi Xia
- Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, United States
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22
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Tseng CC, Wang KC, Lin PS, Chang C, Yeh LL, Tung SH, Liu CL, Cheng YJ. Intrinsically Stretchable Organic Thermoelectric Polymers Enabled by Incorporating Fused-Ring Conjugated Breakers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401966. [PMID: 38733223 DOI: 10.1002/smll.202401966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2024] [Revised: 04/22/2024] [Indexed: 05/13/2024]
Abstract
While research on organic thermoelectric polymers is making significant progress in recent years, realization of a single polymer material possessing both thermoelectric properties and stretchability for the next generation of self-powered wearable electronics is a challenging task and remains an area yet to be explored. A new molecular engineering concept of "conjugated breaker" is employed to impart stretchability to a highly crystalline diketopyrrolepyrrole (DPP)-based polymer. A hexacyclic diindenothieno[2,3-b]thiophene (DITT) unit, with two 4-octyloxyphenyl groups substituted at the tetrahedral sp3-carbon bridges, is selected to function as the conjugated breaker that can sterically hinder intermolecular packing to reduce polymers' crystallinity. A series of donor-acceptor random copolymers is thus developed via polymerizing the crystalline DPP units with the DITT conjugated breakers. By controlling the monomeric DPP/DITT ratios, DITT30 reaches the optimal balance of crystalline/amorphous regions, exhibiting an exceptional power factor (PF) value up to 12.5 µW m-1 K-2 after FeCl3-doping; while, simultaneously displaying the capability to withstand strains exceeding 100%. More significantly, the doped DITT30 film possesses excellent mechanical endurance, retaining 80% of its initial PF value after 200 cycles of stretching/releasing at a strain of 50%. This research marks a pioneering achievement in creating intrinsically stretchable polymers with exceptional thermoelectric properties.
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Affiliation(s)
- Chi-Chun Tseng
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Kuang-Chieh Wang
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Po-Shen Lin
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chi Chang
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Li-Lun Yeh
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Shih-Huang Tung
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Cheng-Liang Liu
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yen-Ju Cheng
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
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23
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Manako H, Ohsumi S, Sato YJ, Okazaki R, Aoki D. Large transverse thermoelectric effect induced by the mixed-dimensionality of Fermi surfaces. Nat Commun 2024; 15:3907. [PMID: 38724529 PMCID: PMC11081953 DOI: 10.1038/s41467-024-48217-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Accepted: 04/24/2024] [Indexed: 05/12/2024] Open
Abstract
Transverse thermoelectric effect, the conversion of longitudinal heat current into transverse electric current, or vice versa, offers a promising energy harvesting technology. Materials with axis-dependent conduction polarity, known as p × n-type conductors or goniopolar materials, are potential candidate, because the non-zero transverse elements of thermopower tensor appear under rotational operation, though the availability is highly limited. Here, we report that a ternary metal LaPt2B with unique crystal structure exhibits axis-dependent thermopower polarity, which is driven by mixed-dimensional Fermi surfaces consisting of quasi-one-dimensional hole sheet with out-of-plane velocity and quasi-two-dimensional electron sheets with in-plane velocity. The ideal mixed-dimensional conductor LaPt2B exhibits an extremely large transverse Peltier conductivity up to ∣αyx∣ = 130 A K-1 m-1, and its transverse thermoelectric performance surpasses those of topological magnets utilizing the anomalous Nernst effect. These results thus manifest the mixed-dimensionality as a key property for efficient transverse thermoelectric conversion.
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Affiliation(s)
- Hikari Manako
- Department of Physics and Astronomy, Tokyo University of Science, Noda, Japan
| | - Shoya Ohsumi
- Department of Physics and Astronomy, Tokyo University of Science, Noda, Japan
| | - Yoshiki J Sato
- Department of Physics and Astronomy, Tokyo University of Science, Noda, Japan.
- Graduate School of Science and Engineering, Saitama University, Saitama, Japan.
| | - R Okazaki
- Department of Physics and Astronomy, Tokyo University of Science, Noda, Japan
| | - D Aoki
- Institute for Materials Research, Tohoku University, Oarai, Ibaraki, Japan
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24
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Sun X, Yan Y, Kang M, Zhao W, Yan K, Wang H, Li R, Zhao S, Hua X, Wang B, Zhang W, Deng Y. General strategy for developing thick-film micro-thermoelectric coolers from material fabrication to device integration. Nat Commun 2024; 15:3870. [PMID: 38719875 PMCID: PMC11079074 DOI: 10.1038/s41467-024-48346-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2024] [Accepted: 04/28/2024] [Indexed: 05/12/2024] Open
Abstract
Micro-thermoelectric coolers are emerging as a promising solution for high-density cooling applications in confined spaces. Unlike thin-film micro-thermoelectric coolers with high cooling flux at the expense of cooling temperature difference due to very short thermoelectric legs, thick-film micro-thermoelectric coolers can achieve better comprehensive cooling performance. However, they still face significant challenges in both material preparation and device integration. Herein, we propose a design strategy which combines Bi2Te3-based thick film prepared by powder direct molding with micro-thermoelectric cooler integrated via phase-change batch transfer. Accurate thickness control and relatively high thermoelectric performance can be achieved for the thick film, and the high-density-integrated thick-film micro-thermoelectric cooler exhibits excellent performance with maximum cooling temperature difference of 40.6 K and maximum cooling flux of 56.5 W·cm-2 at room temperature. The micro-thermoelectric cooler also shows high temperature control accuracy (0.01 K) and reliability (over 30000 cooling cycles). Moreover, the device demonstrates remarkable capacity in power generation with normalized power density up to 214.0 μW · cm-2 · K-2. This study provides a general and scalable route for developing high-performance thick-film micro-thermoelectric cooler, benefiting widespread applications in thermal management of microsystems.
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Affiliation(s)
- Xiaowen Sun
- School of Materials Science and Engineering, Beihang University, Beijing, China
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - Yuedong Yan
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China.
| | - Man Kang
- School of Materials Science and Engineering, Beihang University, Beijing, China
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - Weiyun Zhao
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - Kaifen Yan
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - He Wang
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - Ranran Li
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - Shijie Zhao
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - Xiaoshe Hua
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - Boyi Wang
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China
| | - Weifeng Zhang
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China.
| | - Yuan Deng
- School of Materials Science and Engineering, Beihang University, Beijing, China.
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou, China.
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25
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Sukserm A, Ceppatelli M, Serrano-Ruiz M, Scelta D, Dziubek K, Morana M, Bini R, Peruzzini M, Bovornratanaraks T, Pinsook U, Scandolo S. Stability, Chemical Bonding, and Electron Lone Pair Localization in AsN at High Pressure by Density Functional Theory Calculations. Inorg Chem 2024; 63:8142-8154. [PMID: 38640445 DOI: 10.1021/acs.inorgchem.4c00342] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/21/2024]
Abstract
The covalent bonding framework of crystalline single-bonded cubic AsN, recently synthesized under high pressure and high temperature conditions in a laser-heated diamond anvil cell, is here studied by means of density functional theory calculations and compared to single crystal X-ray diffraction data. The precise localization of the nonbonding electron lone pairs and the determination of their distances and orientations are related to the presence of characteristic structural motifs and space regions of the unit cell dominated by repulsive electronic interactions, with the relative orientation of the electron lone pairs playing a key role in minimizing the energy of the structure. We find that the vibrational modes associated with the expression of the lone pairs are strongly localized, an observation that may have implications for the thermal conductivity of the compound. The results indicate the thermodynamic stability of the experimentally observed structure of AsN above ∼17 GPa, provide a detailed insight into the nature of the chemical bonding network underlying the formation of this compound, and open new perspectives to the design and high pressure synthesis of new pnictogen-based advanced materials for potential applications of energetic and technological relevance.
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Affiliation(s)
- Akkarach Sukserm
- Extreme Conditions Physics Research Laboratory and Center of Excellence in Physics of Energy Materials(CE:PEM), Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330, Thailand
- Thailand Center of Excellence in Physics, Ministry of Higher Education, Science, Research and Innovation, 328 Si Ayutthaya Road, Bangkok 10400, Thailand
| | - Matteo Ceppatelli
- ICCOM-CNR, Institute of Chemistry of OrganoMetallic Compounds, National Research Council of Italy, Via Madonna del Piano 10, I-50019 Sesto Fiorentino, Firenze, Italy
- LENS, European Laboratory for Non-linear Spectroscopy, Via N. Carrara 1, I-50019, Sesto Fiorentino, FirenzeItaly
| | - Manuel Serrano-Ruiz
- ICCOM-CNR, Institute of Chemistry of OrganoMetallic Compounds, National Research Council of Italy, Via Madonna del Piano 10, I-50019 Sesto Fiorentino, Firenze, Italy
| | - Demetrio Scelta
- ICCOM-CNR, Institute of Chemistry of OrganoMetallic Compounds, National Research Council of Italy, Via Madonna del Piano 10, I-50019 Sesto Fiorentino, Firenze, Italy
- LENS, European Laboratory for Non-linear Spectroscopy, Via N. Carrara 1, I-50019, Sesto Fiorentino, FirenzeItaly
| | - Kamil Dziubek
- Institut für Mineralogie und Kristallographie, Universität Wien, Josef-Holaubek-Platz 2, A-1090 Wien, Austria
| | - Marta Morana
- Dipartimento di Scienze della Terra, Università degli Studi di Firenze, Via La Pira 4, Firenze I-50121, Italy
| | - Roberto Bini
- ICCOM-CNR, Institute of Chemistry of OrganoMetallic Compounds, National Research Council of Italy, Via Madonna del Piano 10, I-50019 Sesto Fiorentino, Firenze, Italy
- LENS, European Laboratory for Non-linear Spectroscopy, Via N. Carrara 1, I-50019, Sesto Fiorentino, FirenzeItaly
- Dipartimento di Chimica "Ugo Schiff", Università degli Studi di Firenze, Via della Lastruccia 3, I-50019 Sesto Fiorentino, Firenze, Italy
| | - Maurizio Peruzzini
- ICCOM-CNR, Institute of Chemistry of OrganoMetallic Compounds, National Research Council of Italy, Via Madonna del Piano 10, I-50019 Sesto Fiorentino, Firenze, Italy
| | - Thiti Bovornratanaraks
- Extreme Conditions Physics Research Laboratory and Center of Excellence in Physics of Energy Materials(CE:PEM), Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330, Thailand
- Thailand Center of Excellence in Physics, Ministry of Higher Education, Science, Research and Innovation, 328 Si Ayutthaya Road, Bangkok 10400, Thailand
| | - Udomsilp Pinsook
- Department of Physics, Faculty of Science, Chulalongkorn University, 254 Phyathai Road, 10330 Bangkok, Thailand
| | - Sandro Scandolo
- The Abdus Salam International Centre for Theoretical Physics (ICTP), Strada Costiera 11, I-34151 Trieste, Italy
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26
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Xiong H, Nie X, Zhao L, Deng S. Engineering Symmetry Breaking in Twisted MoS 2-MoSe 2 Heterostructures for Optimal Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38709893 DOI: 10.1021/acsami.4c03767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Engineering symmetry breaking in thermoelectric materials holds promise for achieving an optimal thermoelectric efficiency. van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) provide critical opportunities for manipulating the intrinsic symmetry through in-plane symmetry breaking interlayer twists and out-of-plane symmetry breaking heterostructures. Herein, the symmetry-dependent thermoelectric properties of MoS2 and MoSe2 obtained via first-principles calculations are reported, yielding an advanced ZT of 2.96 at 700 K. The underlying mechanisms reveal that the in-plane symmetry breaking results in a lowest thermal conductivity of 1.96 W·m-1·K-1. Additionally, the electric properties can be significantly modulated through band flattening and bandgap alteration, stemming directly from the modified interlayer electronic coupling strength owing to spatial repulsion effects. In addition, out-of-plane symmetry breaking induces band splitting, leading to a decrease in the degeneracy and complex band structures. Consequently, the power factor experiences a notable enhancement from ∼1.32 to 1.71 × 10-2 W·m-1·K-2, which is attributed to the intricate spatial configuration of charge densities and the resulting intensified intralayer electronic coupling. Upon simultaneous implementation of in-plane and out-of-plane symmetry breaking, the TMDCs exhibit an indirect bandgap to direct bandgap transition compared to the pristine structure. This work demonstrates an avenue for optimizing thermoelectric performance of TMDCs through the implementation of symmetry breaking.
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Affiliation(s)
- Hanping Xiong
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Xianhua Nie
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Li Zhao
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Shuai Deng
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
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27
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Wang L, Wen Y, Bai S, Chang C, Li Y, Liu S, Liu D, Wang S, Zhao Z, Zhan S, Cao Q, Gao X, Xie H, Zhao LD. Realizing thermoelectric cooling and power generation in N-type PbS 0.6Se 0.4 via lattice plainification and interstitial doping. Nat Commun 2024; 15:3782. [PMID: 38710678 DOI: 10.1038/s41467-024-48268-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Accepted: 04/25/2024] [Indexed: 05/08/2024] Open
Abstract
Thermoelectrics have great potential for use in waste heat recovery to improve energy utilization. Moreover, serving as a solid-state heat pump, they have found practical application in cooling electronic products. Nevertheless, the scarcity of commercial Bi2Te3 raw materials has impeded the sustainable and widespread application of thermoelectric technology. In this study, we developed a low-cost and earth-abundant PbS compound with impressive thermoelectric performance. The optimized n-type PbS material achieved a record-high room temperature ZT of 0.64 in this system. Additionally, the first thermoelectric cooling device based on n-type PbS was fabricated, which exhibits a remarkable cooling temperature difference of ~36.9 K at room temperature. Meanwhile, the power generation efficiency of a single-leg device employing our n-type PbS material reaches ~8%, showing significant potential in harvesting waste heat into valuable electrical power. This study demonstrates the feasibility of sustainable n-type PbS as a viable alternative to commercial Bi2Te3, thereby extending the application of thermoelectrics.
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Affiliation(s)
- Lei Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yi Wen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Shulin Bai
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Tianmushan Laboratory, Hangzhou, 311115, China
| | - Cheng Chang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yichen Li
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Shan Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Dongrui Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Siqi Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhe Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Shaoping Zhan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Qian Cao
- Huabei Cooling Device Co. LTD., Hebei, 065400, China
| | - Xiang Gao
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing, 100094, China
| | - Hongyao Xie
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
- Tianmushan Laboratory, Hangzhou, 311115, China.
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28
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Zhao W, Jin K, Xu P, Wu F, Fu L, Xu B. Bismuth Telluride Supported Sub-1 nm Polyoxometalate Cluster for High-Efficiency Thermoelectric Energy Conversion. NANO LETTERS 2024; 24:5361-5370. [PMID: 38630986 DOI: 10.1021/acs.nanolett.4c01304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Size plays a crucial role in chemistry and material science. Subnanometer polyoxometalate (POM) clusters have gained attention in various fields, but their use in thermoelectrics is still limited. To address this issue, we propose the POM clusters as an effective second phase to enhance the thermoelectric properties of Bi0.4Sb1.6Te3. Thanks to their subnanometer size, POM clusters improve electrical transport behavior through the superposition of atomic orbitals and the interfacial scattering effect. Furthermore, their ultrasmall size strongly reduces thermal conductivity. Consequently, the introduction of a mere 0.1 mol % of POM into the Bi0.4Sb1.6Te3 matrix realizes a state-of-the-art zT value of 1.46 at 348 K, a 45% enhancement over Bi0.4Sb1.6Te3 (1.01), along with a maximum thermoelectric-conversion efficiency of the integrated module of 6.0%. The enhancement of carrier mobility and the suppression of thermal conduction achieved by introducing the subnanometer clusters hold promise for various applications, such as electronic devices and thermal management.
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Affiliation(s)
- Wei Zhao
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Kangpeng Jin
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Pengfei Xu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Fanshi Wu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Liangwei Fu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Biao Xu
- School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
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29
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Liu YM, Shi XL, Wu T, Wu H, Mao Y, Cao T, Wang DZ, Liu WD, Li M, Liu Q, Chen ZG. Boosting thermoelectric performance of single-walled carbon nanotubes-based films through rational triple treatments. Nat Commun 2024; 15:3426. [PMID: 38654020 DOI: 10.1038/s41467-024-47417-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Accepted: 04/02/2024] [Indexed: 04/25/2024] Open
Abstract
Single-walled carbon nanotubes (SWCNTs)-based thermoelectric materials, valued for their flexibility, lightweight, and cost-effectiveness, show promise for wearable thermoelectric devices. However, their thermoelectric performance requires significant enhancement for practical applications. To achieve this goal, in this work, we introduce rational "triple treatments" to improve the overall performance of flexible SWCNT-based films, achieving a high power factor of 20.29 µW cm-1 K-2 at room temperature. Ultrasonic dispersion enhances the conductivity, NaBH4 treatment reduces defects and enhances the Seebeck coefficient, and cold pressing significantly densifies the SWCNT films while preserving the high Seebeck coefficient. Also, bending tests confirm structural stability and exceptional flexibility, and a six-legged flexible device demonstrates a maximum power density of 2996 μW cm-2 at a 40 K temperature difference, showing great application potential. This advancement positions SWCNT films as promising flexible thermoelectric materials, providing insights into high-performance carbon-based thermoelectrics.
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Affiliation(s)
- Yuan-Meng Liu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, China
| | - Xiao-Lei Shi
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, Australia
| | - Ting Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, China
| | - Hao Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, China
| | - Yuanqing Mao
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, Australia
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD, Australia
- Department of Physics and Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen, China
| | - Tianyi Cao
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, Australia
| | - De-Zhuang Wang
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, China
| | - Wei-Di Liu
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, Australia
| | - Meng Li
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, Australia
| | - Qingfeng Liu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, China.
| | - Zhi-Gang Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, Australia.
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30
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Jiang Z, Li E, Shi R, Feng B, Chen JL, Peng Y, Liu C, Miao L. Effective Nonstoichiometric Strategy Combined Post-annealing Process for Boosting Thermoelectric Properties in n-Type PbTe. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19048-19056. [PMID: 38578807 DOI: 10.1021/acsami.4c03051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/07/2024]
Abstract
The intrinsic low electrical properties have hindered the enhancement of thermoelectric performance for n-type PbTe over a long period of time, primarily due to the generation of intrinsic Pb vacancies and other defects. In this work, PbTe samples with nonstoichiometric excess Pb atoms were successfully prepared by a melting reaction followed by spark plasma sintering. First, the introduction of precisely controlled excess Pb atoms has effectively eliminated the typical p-n transition phenomenon in PbTe systems by suppressing the generation of Pb vacancies. Further, the vacuum annealing process employed in nonstoichiometric samples increases the carrier mobility significantly because of the improved crystallinity and the lowered holes. Thus, the Hall mobility was optimized from 754.3 to 1215.9 cm2 V-1 s-1, while the power factor was ultimately elevated from 3087.8 to 4565.7 μW m-1 K-2 for the Pb1.03Te sample at 323 K. Benefited from the enhanced electrical transport properties near room temperature, an average zT ∼ 1.03 ranging from 323 to 723 K was achieved, demonstrating an outstanding performance in n-type nondoped PbTe. This work provides guidance for optimizing the thermoelectric performance of n-type PbTe and relevant telluride by reducing vacancies and other defects.
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Affiliation(s)
- Zexin Jiang
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Enliang Li
- China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
| | - Runze Shi
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Baoquan Feng
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Jun-Liang Chen
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Ying Peng
- Guangxi Key Laboratory of Precision Navigation Technology and Application, School of Information and Communication, Guilin University of Electronic Technology, Guilin 541004, China
| | - Chengyan Liu
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Lei Miao
- Guangxi Key Laboratory for Relativity Astrophysics, State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
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31
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Jin J, Lv F, Cao W, Wang Z. First-Principles Study of Doped CdX( X = Te, Se) Compounds: Enhancing Thermoelectric Properties. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1797. [PMID: 38673157 PMCID: PMC11051371 DOI: 10.3390/ma17081797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 04/04/2024] [Accepted: 04/04/2024] [Indexed: 04/28/2024]
Abstract
Isovalent doping offers a method to enhance the thermoelectric properties of semiconductors, yet its influence on the phonon structure and propagation is often overlooked. Here, we take CdX (X=Te, Se) compounds as an example to study the role of isovalent doping in thermoelectrics by first-principles calculations in combination with the Boltzmann transport theory. The electronic and phononic properties of Cd8Se8, Cd8Se7Te, Cd8Te8, and Cd8Te7Se are compared. The results suggest that isovalent doping with CdX significantly improves the thermoelectric performance. Due to the similar properties of Se and Te atoms, the electronic properties remain unaffected. Moreover, doping enhances anharmonic phonon scattering, leading to a reduction in lattice thermal conductivity. Our results show that optimized p-type(n-type) ZT values can reach 3.13 (1.33) and 2.51 (1.21) for Cd8Te7Se and Cd8Se7Te at 900 K, respectively. This research illuminates the potential benefits of strategically employing isovalent doping to enhance the thermoelectric properties of CdX compounds.
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Affiliation(s)
- Junfeng Jin
- The Institute of Technological Sciences, Wuhan University, Wuhan 430060, China;
| | - Fang Lv
- Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China;
| | - Wei Cao
- The Institute of Technological Sciences, Wuhan University, Wuhan 430060, China;
- Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China;
| | - Ziyu Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430060, China;
- Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China;
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32
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Li NH, Zhang Q, Shi XL, Jiang J, Chen ZG. Silver Copper Chalcogenide Thermoelectrics: Advance, Controversy, and Perspective. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313146. [PMID: 38608290 DOI: 10.1002/adma.202313146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 04/09/2024] [Indexed: 04/14/2024]
Abstract
Thermoelectric technology, which enables a direct and pollution-free conversion of heat into electricity, provides a promising path to address the current global energy crisis. Among the broad range of thermoelectric materials, silver copper chalcogenides (AgCuQ, Q = S, Se, Te) have garnered significant attention in thermoelectric community in light of inherently ultralow lattice thermal conductivity, controllable electronic transport properties, excellent thermoelectric performance across various temperature ranges, and a degree of ductility. This review epitomizes the recent progress in AgCuQ-based thermoelectric materials, from the optimization of thermoelectric performance to the rational design of devices, encompassing the fundamental understanding of crystal structures, electronic band structures, mechanical properties, and quasi-liquid behaviors. The correlation between chemical composition, mechanical properties, and thermoelectric performance in this material system is also highlighted. Finally, several key issues and prospects are proposed for further optimizing AgCuQ-based thermoelectric materials.
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Affiliation(s)
- Nan-Hai Li
- School of Chemistry and Physics, ARC Research Hub in Zero-Emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Qiang Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Science, Beijing, 101408, China
| | - Xiao-Lei Shi
- School of Chemistry and Physics, ARC Research Hub in Zero-Emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Jun Jiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Science, Beijing, 101408, China
| | - Zhi-Gang Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-Emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
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33
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Lee S, Park GM, Kim Y, Lee SH, Jung SJ, Hong J, Kim SC, Won SO, Lee AS, Chung YJ, Kim JY, Kim H, Baek SH, Kim JS, Park TJ, Kim SK. Unlocking the Potential of Porous Bi 2Te 3-Based Thermoelectrics Using Precise Interface Engineering through Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2024; 16:17683-17691. [PMID: 38531014 DOI: 10.1021/acsami.4c01946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Porous thermoelectric materials offer exciting prospects for improving the thermoelectric performance by significantly reducing the thermal conductivity. Nevertheless, porous structures are affected by issues, including restricted enhancements in performance attributed to decreased electronic conductivity and degraded mechanical strength. This study introduces an innovative strategy for overcoming these challenges using porous Bi0.4Sb1.6Te3 (BST) by combining porous structuring and interface engineering via atomic layer deposition (ALD). Porous BST powder was produced by selectively dissolving KCl in a milled mixture of BST and KCl; the interfaces were engineered by coating ZnO films through ALD. This novel architecture remarkably reduced the thermal conductivity owing to the presence of several nanopores and ZnO/BST heterointerfaces, promoting efficient phonon scattering. Additionally, the ZnO coating mitigated the high resistivity associated with the porous structure, resulting in an improved power factor. Consequently, the ZnO-coated porous BST demonstrated a remarkable enhancement in thermoelectric efficiency, with a maximum zT of approximately 1.53 in the temperature range of 333-353 K, and a zT of 1.44 at 298 K. Furthermore, this approach plays a significant role in enhancing the mechanical strength, effectively mitigating a critical limitation of porous structures. These findings open new avenues for the development of advanced porous thermoelectric materials and highlight their potential for precise interface engineering through the ALD.
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Affiliation(s)
- Seunghyeok Lee
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, South Korea
| | - Gwang Min Park
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, South Korea
| | - Younghoon Kim
- Graduate School of Materials and Devices, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - So-Hyeon Lee
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Sung-Jin Jung
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Junpyo Hong
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-Mobility, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Sung-Chul Kim
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Sung Ok Won
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Albert S Lee
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-Mobility, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Yoon Jang Chung
- Department of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
| | - Ju-Young Kim
- Graduate School of Materials and Devices, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Heesuk Kim
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Seung-Hyub Baek
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
| | - Jin-Sang Kim
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju 55324, South Korea
| | - Tae Joo Park
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, South Korea
| | - Seong Keun Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, South Korea
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34
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Daniel J, Jesby CM, Plass KE, Anderson ME. Multinary Tetrahedrite (Cu 12-x-yM xN ySb 4S 13) Nanoparticles: Tailoring Thermal and Optical Properties with Copper-Site Dopants. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:3246-3258. [PMID: 38617807 PMCID: PMC11007862 DOI: 10.1021/acs.chemmater.3c03110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Revised: 03/06/2024] [Accepted: 03/08/2024] [Indexed: 04/16/2024]
Abstract
Tetrahedrite (Cu12Sb4S13) is an earth-abundant and nontoxic compound with prospective applications in green energy technologies such as thermoelectric waste heat recycling or photovoltaic power generation. A facile, one-pot solution-phase modified polyol method has been developed that produces high-purity nanoscale tetrahedrite products with exceptional stoichiometric and phase control. This modified polyol method is used here to produce phase-pure quaternary and quintenary tetrahedrite nanoparticles doped on the Cu-site with Zn, Fe, Ni, Mn, or Co. This is the first time that Cu-site codoped quintenary tetrahedrite and Mn-doped quaternary tetrahedrite have been produced by a solution-phase method. X-ray diffraction shows phase-pure tetrahedrite, while scanning and transmission electron microscopy show the size and morphology of the nanomaterials. Energy dispersive X-ray spectroscopy confirms nanoparticles have near-stoichiometric elemental compositions. Thermal stability of quintenary codoped tetrahedrite material is analyzed using thermogravimetric analysis, finding that codoping with Mn, Fe, Ni, and Zn increased thermal stability while codoping with cobalt decreased thermal stability. This is the first systematic study of the optical properties of quaternary and quintenary tetrahedrite nanoparticles doped on the Cu-site. Visible-NIR diffuse reflectance spectroscopy reveals that the quaternary and quintenary tetrahedrite nanoparticles have direct optical band gaps ranging from 1.88 to 2.04 eV. Data from thermal and optical characterization support that codoped tetrahedrite nanoparticles are composed of quintenary grains. This research seeks to enhance understanding of the material properties of tetrahedrite, leading to the optimization of sustainable, nontoxic, and high-performance photovoltaic and thermoelectric materials.
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Affiliation(s)
- Jacob
E. Daniel
- Chemistry
Department, Furman University, Greenville, South Carolina 29613, United States
| | - Christian M. Jesby
- Chemistry
Department, Franklin & Marshall College, Lancaster, Pennsylvania 17604, United States
| | - Katherine E. Plass
- Chemistry
Department, Franklin & Marshall College, Lancaster, Pennsylvania 17604, United States
| | - Mary E. Anderson
- Chemistry
Department, Furman University, Greenville, South Carolina 29613, United States
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35
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Jia B, Wu D, Xie L, Wang W, Yu T, Li S, Wang Y, Xu Y, Jiang B, Chen Z, Weng Y, He J. Pseudo-nanostructure and trapped-hole release induce high thermoelectric performance in PbTe. Science 2024; 384:81-86. [PMID: 38574137 DOI: 10.1126/science.adj8175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 03/04/2024] [Indexed: 04/06/2024]
Abstract
Thermoelectric materials can realize direct and mutual conversion between electricity and heat. However, developing a strategy to improve high thermoelectric performance is challenging because of strongly entangled electrical and thermal transport properties. We demonstrate a case in which both pseudo-nanostructures of vacancy clusters and dynamic charge-carrier regulation of trapped-hole release have been achieved in p-type lead telluride-based materials, enabling the simultaneous regulations of phonon and charge carrier transports. We realized a peak zT value up to 2.8 at 850 kelvin and an average zT value of 1.65 at 300 to 850 kelvin. We also achieved an energy conversion efficiency of ~15.5% at a temperature difference of 554 kelvin in a segmented module. Our demonstration shows promise for mid-temperature thermoelectrics across a range of different applications.
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Affiliation(s)
- Baohai Jia
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Di Wu
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Lin Xie
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Wu Wang
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Tian Yu
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Shangyang Li
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yan Wang
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yanjun Xu
- Laboratory of Soft Matter Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Binbin Jiang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhiquan Chen
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Yuxiang Weng
- Laboratory of Soft Matter Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiaqing He
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
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36
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Thakur S, Giri A. Pushing the Limits of Heat Conduction in Covalent Organic Frameworks Through High-Throughput Screening of Their Thermal Conductivity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401702. [PMID: 38567486 DOI: 10.1002/smll.202401702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Revised: 03/08/2024] [Indexed: 04/04/2024]
Abstract
Tailor-made materials featuring large tunability in their thermal transport properties are highly sought-after for diverse applications. However, achieving `user-defined' thermal transport in a single class of material system with tunability across a wide range of thermal conductivity values requires a thorough understanding of the structure-property relationships, which has proven to be challenging. Herein, large-scale computational screening of covalent organic frameworks (COFs) for thermal conductivity is performed, providing a comprehensive understanding of their structure-property relationships by leveraging systematic atomistic simulations of 10,750 COFs with 651 distinct organic linkers. Through the data-driven approach, it is shown that by strategic modulation of their chemical and structural features, the thermal conductivity can be tuned from ultralow (≈0.02 W m-1 K-1) to exceptionally high (≈50 W m-1 K-1) values. It is revealed that achieving high thermal conductivity in COFs requires their assembly through carbon-carbon linkages with densities greater than 500 kg m-3, nominal void fractions (in the range of ≈0.6-0.9) and highly aligned polymeric chains along the heat flow direction. Following these criteria, it is shown that these flexible polymeric materials can possess exceptionally high thermal conductivities, on par with several fully dense inorganic materials. As such, the work reveals that COFs mark a new regime of materials design that combines high thermal conductivities with low densities.
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Affiliation(s)
- Sandip Thakur
- Department of Mechanical, Industrial, and Systems Engineering, University of Rhode Island, Kingston, RI, 02881, USA
| | - Ashutosh Giri
- Department of Mechanical, Industrial, and Systems Engineering, University of Rhode Island, Kingston, RI, 02881, USA
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37
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Lyu J, Yang D, Liu Y, Li J, Zhang Z, Li Z, Liu M, Liu W, Ren Z, Liu H, Wu J, Tang X, Yan Y. The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16505-16514. [PMID: 38527233 DOI: 10.1021/acsami.4c00625] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
The micro thermoelectric device (m-TED) boasts features such as adjustable volume, straightforward structure, and precise, rapid temperature control, positioning it as the only current solution for managing the temperature of microelectronic systems. It is extensively utilized in 5G optical modules, laser lidars, and infrared detection. Nevertheless, as the size of the m-TED diminishes, the growing proportion of interface damages the device's operational reliability, constraining the advancement of the m-TED. In this study, we used commercially available bismuth telluride materials to construct the m-TED. The device's reliability was tested under various temperatures: -40, 85, 125, and 150 °C. By deconstructing and analyzing the devices that failed during the tests, we discovered that the primary cause of device failure was the degradation of the solder layer. Moreover, we demonstrated that encapsulating the device with polydimethylsiloxane (PDMS) could effectively delay the deterioration of its performance. This study sparks new insights into the service reliability of m-TEDs and paves the way for further optimizing device interface design and enhancing the device manufacturing process.
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Affiliation(s)
- Jianan Lyu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China
| | - Dongwang Yang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yutian Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Junhao Li
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Zinan Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Zhenming Li
- Energy Storage and Electrotechnics Department, China Electric Power Research Institute, Beijing 100192, China
| | - Mingyang Liu
- Energy Storage and Electrotechnics Department, China Electric Power Research Institute, Beijing 100192, China
| | - Wei Liu
- Energy Storage and Electrotechnics Department, China Electric Power Research Institute, Beijing 100192, China
| | - Zhigang Ren
- SGCC Beijing Electric Power Research Institute, Beijing 100075, China
| | - Hongjing Liu
- SGCC Beijing Electric Power Research Institute, Beijing 100075, China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yonggao Yan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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38
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Reus MA, Reb LK, Kosbahn DP, Roth SV, Müller-Buschbaum P. INSIGHT: in situ heuristic tool for the efficient reduction of grazing-incidence X-ray scattering data. J Appl Crystallogr 2024; 57:509-528. [PMID: 38596722 PMCID: PMC11001412 DOI: 10.1107/s1600576723011159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 12/31/2023] [Indexed: 04/11/2024] Open
Abstract
INSIGHT is a Python-based software tool for processing and reducing 2D grazing-incidence wide- and small-angle X-ray scattering (GIWAXS/GISAXS) data. It offers the geometric transformation of the 2D GIWAXS/GISAXS detector image to reciprocal space, including vectorized and parallelized pixel-wise intensity correction calculations. An explicit focus on efficient data management and batch processing enables full control of large time-resolved synchrotron and laboratory data sets for a detailed analysis of kinetic GIWAXS/GISAXS studies of thin films. It processes data acquired with arbitrarily rotated detectors and performs vertical, horizontal, azimuthal and radial cuts in reciprocal space. It further allows crystallographic indexing and GIWAXS pattern simulation, and provides various plotting and export functionalities. Customized scripting offers a one-step solution to reduce, process, analyze and export findings of large in situ and operando data sets.
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Affiliation(s)
- Manuel A. Reus
- Chair for Functional Materials, Department of Physics, TUM School of Natural Sciences, Technical University of Munich, James-Franck-Straße 1, 85748 Garching, Germany
| | - Lennart K. Reb
- Chair for Functional Materials, Department of Physics, TUM School of Natural Sciences, Technical University of Munich, James-Franck-Straße 1, 85748 Garching, Germany
| | - David P. Kosbahn
- Chair for Functional Materials, Department of Physics, TUM School of Natural Sciences, Technical University of Munich, James-Franck-Straße 1, 85748 Garching, Germany
| | - Stephan V. Roth
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany
- Royal Institute of Technology (KTH), Teknikringen 56–58, 100 44 Stockholm, Sweden
| | - Peter Müller-Buschbaum
- Chair for Functional Materials, Department of Physics, TUM School of Natural Sciences, Technical University of Munich, James-Franck-Straße 1, 85748 Garching, Germany
- Heinz Maier-Leibnitz Zentrum (MLZ), Technical University of Munich, Lichtenbergstraße 1, 85748 Garching, Germany
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Zhang YX, Huang QY, Yan X, Wang CY, Yang TY, Wang ZY, Shi YC, Shan Q, Feng J, Ge ZH. Synergistically optimized electron and phonon transport in high-performance copper sulfides thermoelectric materials via one-pot modulation. Nat Commun 2024; 15:2736. [PMID: 38548785 PMCID: PMC10979026 DOI: 10.1038/s41467-024-47148-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 03/21/2024] [Indexed: 04/01/2024] Open
Abstract
Optimizing thermoelectric conversion efficiency requires the compromise of electrical and thermal properties of materials, which are hard to simultaneously improve due to the strong coupling of carrier and phonon transport. Herein, a one-pot approach realizing simultaneous second phase and Cu vacancies modulation is proposed, which is effective in synergistically optimizing thermoelectric performance in copper sulfides. Multiple lattice defects, including nanoprecipitates, dislocations, and nanopores are produced by adding a refined ratio of Sn and Se. Phonon transport is significantly suppressed by multiple mechanisms. An ultralow lattice thermal conductivity is therefore obtained. Furthermore, extra Se is added in the copper sulfide for optimizing electrical transport properties by inducing generating Cu vacancies. Ultimately, an excellent figure of merit of ~1.6 at 873 K is realized in the Cu1.992SSe0.016(Cu2SnSe4)0.004 bulk sample. The simple strategy of inducing compositional and structural modulation for improving thermoelectric parameters promotes low-cost high-performance copper sulfides as alternatives in thermoelectric applications.
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Affiliation(s)
- Yi-Xin Zhang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Qin-Yuan Huang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Xi Yan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Chong-Yu Wang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Tian-Yu Yang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Zi-Yuan Wang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Yong-Cai Shi
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Quan Shan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Jing Feng
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Zhen-Hua Ge
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China.
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40
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Hong T, Qin B, Qin Y, Bai S, Wang Z, Cao Q, Ge ZH, Zhang X, Gao X, Zhao LD. All-SnTe-Based Thermoelectric Power Generation Enabled by Stepwise Optimization of n-Type SnTe. J Am Chem Soc 2024; 146:8727-8736. [PMID: 38487899 DOI: 10.1021/jacs.4c01525] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
The practical application of thermoelectric devices requires both high-performance n-type and p-type materials of the same system to avoid possible mismatches and improve device reliability. Currently, environmentally friendly SnTe thermoelectrics have witnessed extensive efforts to develop promising p-type transport, making it rather urgent to investigate the n-type counterparts with comparable performance. Herein, we develop a stepwise optimization strategy for improving the transport properties of n-type SnTe. First, we improve the n-type dopability of SnTe by PbSe alloying to narrow the band gap and obtain n-type transport in SnTe with halogen doping over the whole temperature range. Then, we introduce additional Pb atoms to compensate for the cationic vacancies in the SnTe-PbSe matrix, further enhancing the electron carrier concentration and electrical performance. Resultantly, the high-ranged thermoelectric performance of n-type SnTe is substantially optimized, achieving a peak ZT of ∼0.75 at 573 K with a high average ZT (ZTave) exceeding 0.5 from 300 to 823 K in the (SnTe0.98I0.02)0.6(Pb1.06Se)0.4 sample. Moreover, based on the performance optimization on n-type SnTe, for the first time, we fabricate an all-SnTe-based seven-pair thermoelectric device. This device can produce a maximum output power of ∼0.2 W and a conversion efficiency of ∼2.7% under a temperature difference of 350 K, demonstrating an important breakthrough for all-SnTe-based thermoelectric devices. Our research further illustrates the effectiveness and application potential of the environmentally friendly SnTe thermoelectrics for mid-temperature power generation.
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Affiliation(s)
- Tao Hong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Bingchao Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yongxin Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Shulin Bai
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Ziyuan Wang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
| | - Qian Cao
- Huabei Cooling Device Co., Ltd., Hebei 065400, China
| | - Zhen-Hua Ge
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
| | - Xiao Zhang
- Research Institute for Frontier Science, Beihang University, Beijing 100191, China
| | - Xiang Gao
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100094, China
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Tianmushan Laboratory, Yuhang District, Hangzhou 311115, China
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41
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Ni C, O'Connor KM, Butler C, Veinot JGC. Synthesis of high-entropy germanides and investigation of their formation process. NANOSCALE HORIZONS 2024; 9:580-588. [PMID: 38446210 DOI: 10.1039/d4nh00012a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
High-entropy alloys and compounds have emerged as an attractive research area in part because of their distinctive solid-solution structure and multi-element compositions that provide near-limitless tailorability. A diverse array of reports describing high-entropy compounds, including carbides, nitrides, sulfides, oxides, fluorides, silicides, and borides, has resulted. Strikingly, exploration of high-entropy germanides (HEGs) has remained relatively limited. In this study, we present a detailed investigation into the synthesis of HEGs, specifically AuAgCuPdPtGe and FeCoNiCrVGe, via a rapid thermal annealing. The structural, compositional, and morphological characteristics of the synthesized HEGs were assessed using laboratory X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Complementing these post-synthesis analyses, we interrogated the formation and growth mechanisms using in situ heating XRD and TEM and determined that HEG formation involved initial decomposition of germanane (GeNSs) during the annealing, followed by gradual grain growth via atom diffusion at temperatures below 600 °C, and finally a rapid grain growth process at elevated temperatures.
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Affiliation(s)
- Chuyi Ni
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada.
| | - Kevin M O'Connor
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada.
| | - Cole Butler
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada.
| | - Jonathan G C Veinot
- Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2, Canada.
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42
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Zhu J, Ren Q, Chen C, Wang C, Shu M, He M, Zhang C, Le MD, Torri S, Wang CW, Wang J, Cheng Z, Li L, Wang G, Jiang Y, Wu M, Qu Z, Tong X, Chen Y, Zhang Q, Ma J. Vacancies tailoring lattice anharmonicity of Zintl-type thermoelectrics. Nat Commun 2024; 15:2618. [PMID: 38521767 PMCID: PMC10960861 DOI: 10.1038/s41467-024-46895-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 03/14/2024] [Indexed: 03/25/2024] Open
Abstract
While phonon anharmonicity affects lattice thermal conductivity intrinsically and is difficult to be modified, controllable lattice defects routinely function only by scattering phonons extrinsically. Here, through a comprehensive study of crystal structure and lattice dynamics of Zintl-type Sr(Cu,Ag,Zn)Sb thermoelectric compounds using neutron scattering techniques and theoretical simulations, we show that the role of vacancies in suppressing lattice thermal conductivity could extend beyond defect scattering. The vacancies in Sr2ZnSb2 significantly enhance lattice anharmonicity, causing a giant softening and broadening of the entire phonon spectrum and, together with defect scattering, leading to a ~ 86% decrease in the maximum lattice thermal conductivity compared to SrCuSb. We show that this huge lattice change arises from charge density reconstruction, which undermines both interlayer and intralayer atomic bonding strength in the hierarchical structure. These microscopic insights demonstrate a promise of artificially tailoring phonon anharmonicity through lattice defect engineering to manipulate lattice thermal conductivity in the design of energy conversion materials.
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Affiliation(s)
- Jinfeng Zhu
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Qingyong Ren
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China.
- Spallation Neutron Source Science Center, Dongguan, China.
- Guangdong Provincial Key Laboratory of Extreme Conditions, Dongguan, China.
| | - Chen Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China
- School of Physical Sciences, Great Bay University, Dongguan, Guangdong, China
| | - Chen Wang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR, China
| | - Mingfang Shu
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Miao He
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, CAS Key Laboratory of Photovoltaic and Energy Conservation Materials, High Magnetic Field Laboratory of Chinese Academy of Sciences (CHMFL), HFIPS, CAS, Hefei, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Cuiping Zhang
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Manh Duc Le
- ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, England, UK
| | - Shuki Torri
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki, Japan
| | - Chin-Wei Wang
- Neutron Group, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Jianli Wang
- College of Physics, Jilin University, Changchun, China
- Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Innovation Campus, North Wollongong, Australia
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Innovation Campus, North Wollongong, Australia
| | - Lisi Li
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China
- Spallation Neutron Source Science Center, Dongguan, China
- Guangdong Provincial Key Laboratory of Extreme Conditions, Dongguan, China
| | - Guohua Wang
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Yuxuan Jiang
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui, China
| | - Mingzai Wu
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui, China
| | - Zhe Qu
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, CAS Key Laboratory of Photovoltaic and Energy Conservation Materials, High Magnetic Field Laboratory of Chinese Academy of Sciences (CHMFL), HFIPS, CAS, Hefei, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Xin Tong
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China.
- Spallation Neutron Source Science Center, Dongguan, China.
- Guangdong Provincial Key Laboratory of Extreme Conditions, Dongguan, China.
| | - Yue Chen
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR, China.
| | - Qian Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China.
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, China.
| | - Jie Ma
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, Jiangsu, China.
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Wang R, Liang F, Zhang X, Zhao C, Fang Y, Zheng C, Huang F. Ultralow Thermal Conductivity of a Chalcogenide System Pt 3Bi 4Q 9 (Q = S, Se) Driven by the Hierarchy of Rigid [Pt 6Q 12] 12- Clusters Embedded in Soft Bi-Q Sublattice. J Am Chem Soc 2024; 146:7352-7362. [PMID: 38447048 DOI: 10.1021/jacs.3c12242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Knowledge of structure-property relationships in solids with intrinsic low thermal conductivity is crucial for fields such as thermoelectrics, thermal barrier coatings, and refractories. Herein, we propose a new "rigidness in softness" structural scheme for intrinsic low lattice thermal conductivity (κL), which embeds rigid clusters into the soft matrix to induce large lattice anharmonicity, and accordingly discover a new series of chalcogenides Pt3Bi4Q9 (Q = S, Se). Pt3Bi4S9-xSex (x = 3, 6) achieved an intrinsic ultralow κL down to 0.39 W/(m K) at 773 K, which is considerably low among the Bi chalcogenide thermoelectric materials. Pt3Bi4Q9 contains the rigid cubic [Pt6Q12]12- clusters embedded in the soft Bi-Q sublattice, involving multiple bonding interactions and vibration hierarchy. The hierarchical structure yields a large lattice anharmonicity with high Grüneisen parameters (γ) 1.97 of Pt3Bi4Q9, as verified by the effective scatter of low-lying optical phonons toward heat-carrying acoustic phonons. Consequently, the rigid-soft coupling significantly inhibits heat propagation, exhibiting low acoustic phonon frequencies (∼25 cm-1) and Debye temperatures (ΘD = 170.4 K) in Pt3Bi4Se9. Owing to the suppressed κL and considerable power factor (PF), the ZT value of Pt3Bi4S6Se3 can reach 0.56 at 773 K without heavy carrier doping, which is competitive among the pristine Bi chalcogenides. Theoretical calculations predicted a large potential for performance improvement via proper doping, indicating the great potential of this structure type for promising thermoelectric materials.
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Affiliation(s)
- Ruiqi Wang
- School of Chemical Engineering, University of Chinese Academy of Sciences, Beijing 101408, P. R. China
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Fei Liang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Xian Zhang
- Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094 P. R. China
| | - Chendong Zhao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Chong Zheng
- Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb, Illinois 60115, United States
| | - Fuqiang Huang
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
- State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
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Liu Y, Shi Z, Zhang J, Chen C, Zhang Y, Li L, Chen Q, Zhang Q, Xing F. Crystal Structure and Molten Salt Environment Cooperatively Controlling the Morphology of the Plate-like CaMnO 3 Template through Topochemical Conversion. Inorg Chem 2024; 63:4628-4635. [PMID: 38416706 DOI: 10.1021/acs.inorgchem.3c04191] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/01/2024]
Abstract
In the field of oxide thermoelectrics, perovskite CaMnO3 ceramics have drawn plenty of attention due to their chemical stability, low cost, and environmental friendliness. By employing Ruddlesden-Poppe phase Ca3Mn2O7 as a precursor, the plate-like CaMnO3 microcrystals were successfully synthesized by the molten salt method combined with topochemical microcrystal conversion (TMC). The plate-like morphology of CaMnO3 was coordinately optimized by modulating the crystal structure of MnO2 and the molten salt environment. Plate-like microcrystals with an average size of ∼14.55 μm and a thickness of ∼2.89 μm were obtained by TMC reaction, demonstrating an obvious anisotropy. When β-MnO2 was used as the raw material, a length-thickness ratio of 4.77 was obtained, which was attributed to the fact that CaMnO3 inherited the plate-like morphology of the Ca3Mn2O7 precursor during the TMC. The results confirm that the plate-like CaMnO3 microcrystals with obvious anisotropy can provide excellent template seeds for high-quality CaMnO3-based textured ceramics.
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Affiliation(s)
- Yuan Liu
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Zongmo Shi
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Junzhan Zhang
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Chanli Chen
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Ying Zhang
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Leilei Li
- School of Civil Engineering, Northwest Minzu University, Lanzhou 730000, P. R. China
| | - Qian Chen
- College of Sciences, Xi'an University of Science and Technology, Xi'an, Shaanxi 710054, P. R. China
| | - Qiantao Zhang
- Instrumental Analysis Center, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Fei Xing
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
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Li J, Qi Y, Yang Q, Yue L, Yao C, Chen Z, Meng S, Xiang D, Cao J. Femtosecond Electron Diffraction Reveals Local Disorder and Local Anharmonicity in Thermoelectric SnSe. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313742. [PMID: 38444186 DOI: 10.1002/adma.202313742] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 02/22/2024] [Indexed: 03/07/2024]
Abstract
In addition to long-range periodicity, local disorder, with local structures deviating from the average lattice structure, dominates the physical properties of phonons, electrons, and spin subsystems in crystalline functional materials. Experimentally characterizing the 3D atomic configuration of such a local disorder and correlating it with advanced functions remains challenging. Using a combination of femtosecond electron diffraction, structure factor calculations, and time-dependent density functional theory molecular dynamics simulations, the static local disorder and its local anharmonicity in thermoelectric SnSe are identified exclusively. The ultrafast structural dynamics reveal that the crystalline SnSe is composed of multiple locally correlated configurations dominated by the static off-symmetry displacements of Sn (≈0.4 Å) and such a set of locally correlated structures is termed local disorder. Moreover, the anharmonicity of this local disorder induces an ultrafast atomic displacement within 100 fs, indicating the signature of probable THz Einstein oscillators. The identified local disorder and local anharmonicity suggest a glass-like thermal transport channel, which updates the fundamental insight into the long-debated ultralow thermal conductivity of SnSe. The method of revealing the 3D local disorder and the locally correlated interactions by ultrafast structural dynamics will inspire broad interest in the construction of structure-property relationships in material science.
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Affiliation(s)
- Jingjun Li
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yingpeng Qi
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Qing Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Luye Yue
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Changyuan Yao
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zijing Chen
- Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Dao Xiang
- Key Laboratory for Laser Plasmas (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240, China
- Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jianming Cao
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- Physics Department and National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA
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46
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Zhang Y, Pang K, Zhang Q, Li Y, Zhou W, Tan X, Noudem JG, Wu G, Chen L, Hu H, Sun P, Wu J, Liu GQ, Jiang J. Enhanced Thermoelectric Performance of P-Type (Bi,Sb) 2 Te 3 by Incorporating Non-Stoichiometric Ag 5 Te 3 and Refining Te-Se Ratio. SMALL METHODS 2024; 8:e2301256. [PMID: 38009750 DOI: 10.1002/smtd.202301256] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Revised: 11/03/2023] [Indexed: 11/29/2023]
Abstract
Power generation modules utilizing thermoelectric (TE) materials are suitable for recycling widespread low-grade waste heat (<600 K), highlighting the immediate necessity for advanced Bi2 Te3 -based alloys. Herein, the substantial enhancement in TE performance of the p-type Bi0.4 Sb1.6 Te3 (BST) sintered sample is realized by subtly incorporating the non-stoichiometric Ag5 Te3 and counteractive Se. Specifically, Ag atoms diffused into the BST lattice improve the density-of-states effective mass (md * ) and boost the hole concentration for the suppressed bipolar effect. The addition of Se further improves md * prompting the room-temperature power factor upgrade to 46 W cm-1 K-2 . Concurrently, the lattice thermal conductivity is considerably lowered by multiple scattering sources exemplified by Sb-rich nanoprecipitates and dense dislocations. These synergistic results yield a high peak ZT of 1.44 at 375 K and an average ZT of 1.28 between 300 and 500 K in the Bi0.4 Sb1.6 Te2.95 Se0.05 + 0.05 wt.% Ag5 Te3 sample. More significantly, when coupled with n-type zone-melted Bi2 Te2.7 Se0.3 , the integrated 17-pair TE module achieves a competitive conversion efficiency of 6.1% and an output power density of 0.40 W cm-2 at a temperature difference of 200 K, demonstrating great potential for practical applications.
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Affiliation(s)
- Yuyou Zhang
- School of Material Science and Chemical Engineering, Ningbo University, Ningbo, 315211, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Kaikai Pang
- School of Material Science and Chemical Engineering, Ningbo University, Ningbo, 315211, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Qiang Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanan Li
- School of Material Science and Chemical Engineering, Ningbo University, Ningbo, 315211, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Wenjie Zhou
- School of Material Science and Chemical Engineering, Ningbo University, Ningbo, 315211, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaojian Tan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jacques G Noudem
- Normandie University, ENSICAEN, UNICAEN, CNRS, CRISMAT, Caen, 14000, France
| | - Gang Wu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lidong Chen
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoyang Hu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Peng Sun
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiehua Wu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Guo-Qiang Liu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jun Jiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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47
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Govindaraj P, Murugan K, Venugopal K. One-dimensional van der Waals BiSBr: an anisotropic thermoelectric mineral. Phys Chem Chem Phys 2024; 26:7124-7136. [PMID: 38348675 DOI: 10.1039/d3cp05849b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
The fascinating characteristics of one-dimensional van der Waals crystals (V-VI-VII) enable their wide functionality. In particular, their anisotropic carrier transport and low thermal conductivity are advantageous from a thermoelectric viewpoint. In a quest for the "electron crystal phonon glass" paradigm, the present work investigated the thermoelectric performance of BiSBr. Deep insights were gained into the structural and electronic properties that revealed the synergetic effect of the bonding heterogeneity, lone pair of electrons, and degenerated bands that accelerated favorable transportation. Consequently, a low lattice thermal conductivity (0.225 W m-1 K-1) and considerable power factor (3.471 mW m-1 K-2) and thus a high zT of 2.34 were noted in the x-direction (perpendicular to the chain) at 500 K in the case of the material with 1.5 × 1020 holes per cm3. These observations suggest that BiSBr is a plausible near-room-temperature anisotropic thermoelectric mineral.
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Affiliation(s)
- Prakash Govindaraj
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Chennai 603203, Tamil Nadu, India.
| | - Kowsalya Murugan
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Chennai 603203, Tamil Nadu, India.
| | - Kathirvel Venugopal
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Chennai 603203, Tamil Nadu, India.
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48
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Wu X, Lu Y, Ren X, Wu P, Chu D, Yang X, Xu H. Interfacial Solar Evaporation: From Fundamental Research to Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313090. [PMID: 38385793 DOI: 10.1002/adma.202313090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Revised: 01/31/2024] [Indexed: 02/23/2024]
Abstract
In the last decade, interfacial solar steam generation (ISSG), powered by natural sunlight garnered significant attention due to its great potential for low-cost and environmentally friendly clean water production in alignment with the global decarbonization efforts. This review aims to share the knowledge and engage with a broader readership about the current progress of ISSG technology and the facing challenges to promote further advancements toward practical applications. The first part of this review assesses the current strategies for enhancing the energy efficiency of ISSG systems, including optimizing light absorption, reducing energy losses, harvesting additional energy, and lowering evaporation enthalpy. Subsequently, the current challenges faced by ISSG technologies, notably salt accumulation and bio-fouling issues in practical applications, are elucidated and contemporary methods are discussed to overcome these challenges. In the end, potential applications of ISSG, ranging from initial seawater desalination and industrial wastewater purification to power generation, sterilization, soil remediation, and innovative concept of solar sea farm, are introduced, highlighting the promising potential of ISSG technology in contributing to sustainable and environmentally conscious practices. Based on the review and in-depth understanding of these aspects, the future research focuses are proposed to address potential issues in both fundamental research and practical applications.
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Affiliation(s)
- Xuan Wu
- Future Industries Institute, UniSA STEM, University of South Australia, Mawson Lakes Campus, Adelaide, SA, 5095, Australia
| | - Yi Lu
- International Innovation Center for Forest Chemicals and Materials, College of Science, Nanjing Forestry University, Nanjing, 210037, China
| | - Xiaohu Ren
- Future Industries Institute, UniSA STEM, University of South Australia, Mawson Lakes Campus, Adelaide, SA, 5095, Australia
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Pan Wu
- Future Industries Institute, UniSA STEM, University of South Australia, Mawson Lakes Campus, Adelaide, SA, 5095, Australia
- School of Civil and Environmental Engineering, Hubei University of Technology, Wuhan, Hubei, 430068, China
| | - Dewei Chu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xiaofei Yang
- International Innovation Center for Forest Chemicals and Materials, College of Science, Nanjing Forestry University, Nanjing, 210037, China
| | - Haolan Xu
- Future Industries Institute, UniSA STEM, University of South Australia, Mawson Lakes Campus, Adelaide, SA, 5095, Australia
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49
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Mejri M, Romanjek K, Mouko HI, Thimont Y, Oulfarsi M, David N, Malard B, Estournès C, Dauscher A. Reliability Investigation of Silicide-Based Thermoelectric Modules. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8006-8015. [PMID: 38317603 DOI: 10.1021/acsami.3c15429] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
The reliability and failure mechanisms of silicide-based thermoelectric modules (n-type Mg2(Si,Sn)/p-type HMS) were investigated thanks to two types of thermal tests with either a fixed or a cycling thermal gradient, under different atmospheres. The hot interfaces of the thermoelectric modules were analyzed by scanning electron microscopy and X-ray diffraction after the reliability tests. The current thermoelectric modules do not exhibit any failure mechanism under ambient air for a hot side temperature of 250 °C for tests conducted either during 500 h at a fixed temperature gradient or after 1000 thermal cycles. However, when the temperature was increased to 350 °C, pesting phenomena were detected at the hot side of the n-type Mg2(Si,Sn) legs caused by the decomposition/oxidation of the material. These phenomena are strongly slowed down for thermoelectric modules tested under a primary vacuum, highlighting the predominant role of oxygen in the degradation mechanism. Interdiffusion phenomena are the most pronounced at the interface of the hot side of the n-type thermoelectric materials. The formation of a MgO layer, which is an electrical and thermal insulator, has decreased the thermoelectric modules' performances. For thermal cycling tests, cracks are observed on the hot side of the n-type legs. The presence of these cracks drastically increases the thermal and electrical resistances, leading to an overheating of the system and limiting its efficiency and failure by breaking electrical continuity. The interfaces at the hot side temperature of the p-type HMS legs remained intact whatever the test conditions were, indicating a high chemical stability and a good mechanical strength.
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Affiliation(s)
- Mahdi Mejri
- CIRIMAT, Université de Toulouse, CNRS, Université Toulouse 3 - Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse Cedex 9, France
| | - Krunoslav Romanjek
- Université Grenoble Alpes, CEA-LITEN, 17 rue des Martyrs, 30054 Grenoble Cedex, France
| | | | - Yohann Thimont
- CIRIMAT, Université de Toulouse, CNRS, Université Toulouse 3 - Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse Cedex 9, France
| | - Mostafa Oulfarsi
- Université de Lorraine, CNRS, Institut Jean Lamour, F-54000 Nancy, France
| | - Nicolas David
- Université de Lorraine, CNRS, Institut Jean Lamour, F-54000 Nancy, France
| | - Benoît Malard
- CIRIMAT, Université de Toulouse, CNRS, INP- ENSIACET - 4 allée Emile Monso BP44362, 31030 Toulouse Cedex 4, France
| | - Claude Estournès
- CIRIMAT, Université de Toulouse, CNRS, Université Toulouse 3 - Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse Cedex 9, France
| | - Anne Dauscher
- Université de Lorraine, CNRS, Institut Jean Lamour, F-54000 Nancy, France
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50
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He Y, Dreyer SL, Ting YY, Ma Y, Hu Y, Goonetilleke D, Tang Y, Diemant T, Zhou B, Kowalski PM, Fichtner M, Hahn H, Aghassi-Hagmann J, Brezesinski T, Breitung B, Ma Y. Entropy-Mediated Stable Structural Evolution of Prussian White Cathodes for Long-Life Na-Ion Batteries. Angew Chem Int Ed Engl 2024; 63:e202315371. [PMID: 38014650 DOI: 10.1002/anie.202315371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Revised: 11/14/2023] [Accepted: 11/27/2023] [Indexed: 11/29/2023]
Abstract
The high-entropy approach is applied to monoclinic Prussian White (PW) Na-ion cathodes to address the issue of unfavorable multilevel phase transitions upon electrochemical cycling, leading to poor stability and capacity decay. A series of Mn-based samples with up to six metal species sharing the N-coordinated positions was synthesized. The material of composition Na1.65 Mn0.4 Fe0.12 Ni0.12 Cu0.12 Co0.12 Cd0.12 [Fe(CN)6 ]0.92 □0.08 ⋅ 1.09H2 O was found to exhibit superior cyclability over medium/low-entropy and conventional single-metal PWs. We also report, to our knowledge for the first time, that a high-symmetry crystal structure may be advantageous for high-entropy PWs during battery operation. Computational comparisons of the formation enthalpy demonstrate that the compositionally less complex materials are prone to phase transitions, which negatively affect cycling performance. Based on data from complementary characterization techniques, an intrinsic mechanism for the stability improvement of the disordered PW structure upon Na+ insertion/extraction is proposed, namely the dual effect of suppression of phase transitions and mitigation of gas evolution.
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Affiliation(s)
- Yueyue He
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Sören L Dreyer
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Yin-Ying Ting
- Institute of Energy and Climate Research (IEK-13), Forschungszentrum Jülich GmbH, Wilhelm-Johnen-Str., 52428, Jülich, Germany
- Chair of Theory and Computation of Energy Materials, Faculty of Georesources and Materials Engineering, RWTH Aachen University, 52062, Aachen, Germany
| | - Yuan Ma
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Yang Hu
- Helmholtz Institute Ulm (HIU) for Electrochemical Energy Storage, Helmholtzstr. 11, 89081, Ulm, Germany
| | - Damian Goonetilleke
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- Current address: Corporate Research and Development, Umicore, Watertorenstraat 33, 2250, Olen, Belgium
| | - Yushu Tang
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Thomas Diemant
- Helmholtz Institute Ulm (HIU) for Electrochemical Energy Storage, Helmholtzstr. 11, 89081, Ulm, Germany
| | - Bei Zhou
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Piotr M Kowalski
- Chair of Theory and Computation of Energy Materials, Faculty of Georesources and Materials Engineering, RWTH Aachen University, 52062, Aachen, Germany
- Jülich Aachen Research Alliance, JARA Energy & Center for Simulation and Data Science (CSD), 52425, Jülich, Germany
| | - Maximilian Fichtner
- Helmholtz Institute Ulm (HIU) for Electrochemical Energy Storage, Helmholtzstr. 11, 89081, Ulm, Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- School of Chemical, Biological and Materials Engineering, The University of Oklahoma, Norman, OK, 73019, USA
| | - Jasmin Aghassi-Hagmann
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Torsten Brezesinski
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Ben Breitung
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Yanjiao Ma
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- Current address: School of Energy and Mechanical Engineering, Jiangsu Key Laboratory of New Power Batteries, Nanjing Normal University, Nanjing, 210023, China
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