Insight into the Decomposition Mechanism of Donor-Acceptor Complexes of EH2 (E = Ge and Sn) and Access to Germanium Thin Films from Solution

Stabilization of Colloidal Germanium Nanoparticles: From the Study to the Prospects of the Application in Thin-Film Technology

We present the stabilization of halide-terminated Ge nanoparticles prepared via a disproportionation reaction of metastable Ge(I)X solutions with well-defined size distribution. Further tailoring of the stability of the Ge nanoparticles was achieved using variations in the substituent. Ge nanoparticles obtained in this way are readily dispersed in organic solvents, long-term colloidally stable, and are perfect prerequisites for thin-film preparation. This gives these nanomaterials a future in surface-dependent optical applications, as shown for the halide-terminated nanoparticles.

Molecular Sn(II) precursors for room temperature deposition of crystalline elemental tin

We report mild routes for the deposition of crystalline films of elemental tin via the formation and subsequent decomposition of unstable tin(II) hydrides. Specifically, we take advantage of efficient O^tBu/H metathesis involving Sn(II) alkoxide precursors and the hydride source pinacolborane (HBpin); related -N(SiMe₃)₂/H exchange also afforded elemental tin as a final (insoluble) product.

Activation of Ge-H and Sn-H Bonds with N-Heterocyclic Carbenes and a Cyclic (Alkyl)(amino)carbene

A study of the reactivity of several N-heterocyclic carbenes (NHCs) and the cyclic (alkyl)(amino)carbene 1-(2,6-di-iso-propylphenyl)-3,3,5,5-tetramethyl-pyrrolidin-2-ylidene (cAAC^Me ) with the group 14 hydrides GeH₂ Mes₂ and SnH₂ Me₂ (Me=CH₃ , Mes=1,3,5-(CH₃ )₃ C₆ H₂ ) is presented. The reaction of GeH₂ Mes₂ with cAAC^Me led to the insertion of cAAC^Me into one Ge-H bond to give cAAC^Me H-GeHMes₂ (1). If 1,3,4,5-tetramethyl-imidazolin-2-ylidene (Me₂ Im^Me ) was used as the carbene, NHC-mediated dehydrogenative coupling occurred, which led to the NHC-stabilized germylene Me₂ Im^Me ⋅GeMes₂ (2). The reaction of SnH₂ Me₂ with cAAC^Me also afforded the insertion product cAAC^Me H-SnHMe₂ (3), and reaction of two equivalents Me₂ Im^Me with SnH₂ Me₂ gave the NHC-stabilized stannylene Me₂ Im^Me ⋅SnMe₂ (4). If the sterically more demanding NHCs Me₂ Im^Me , 1,3-di-isopropyl-4,5-dimethyl-imidazolin-2-ylidene (iPr₂ Im^Me ) and 1,3-bis-(2,6-di-isopropylphenyl)-imidazolin-2-ylidene (Dipp₂ Im) were employed, selective formation of cyclic oligomers (SnMe₂ )_n (5; n=5-8) in high yield was observed. These cyclic oligomers were also obtained from the controlled decomposition of cAAC^Me H-SnHMe₂ (3).

An NHC-Stabilized H2 GeBH2 Precursor for the Preparation of Cationic Group 13/14/15 Hydride Chains

The synthesis, characterization and reactivity studies of the NHC-stabilized complex IDipp ⋅ GeH2 BH2 OTf (1) (IDipp=1,3-bis(2,6-diisopropylphenyl)imidazolin-2-ylidene) are reported. Nucleophilic substitution of the triflate (OTf) group in 1 by phosphine or arsine donors provides access to the cationic group 13/14/15 chains [IDipp ⋅ GeH2 BH2 ERR1 R2 ]+ (2 E=P; R, R1 =H; R2 =t Bu; 3 E=P; R=H; R1 , R2 =Ph; 4 a E=P; R, R1 , R2 =Ph; 4 b E=As; R, R1 , R2 =Ph). These novel cationic chains were characterized by X-ray crystallography, NMR spectroscopy and mass spectrometry. Moreover, the formation of the parent complexes [IDipp ⋅ GeH2 BH2 PH3 ][OTf] (5) and [IDipp ⋅ GeH3 ][OTf] (6) were achieved by reaction of 1 with PH3 . Accompanying DFT computations give insight into the stability of the formed chains with respect to their decomposition.

Access to metastable [GeH2]n materials via a molecular "bottom-up" approach

We describe the application of a mild, molecular-based, hydride metathesis protocol for the preparation of metastable germanium(II) dihydrides with compositions approaching [GeH₂]_n. The common starting material for this work [Ge(O^tBu)₂] was prepared in a high yield and shown to undergo O^tBu/H exchange at Ge with the hydride sources pinacolborane (HBpin), catecholborane (HBcat), and diisobutylaluminum hydride (DIBAL-H) to give the [GeH₂]_n materials as yellow to orange solids. Heating one of these [GeH₂]_n materials to 200 °C affords a narrowing of the optical band gap (from 2.5 eV) and the generation of amorphous Ge. Reaction of [Ge(O^tBu)₂] with excess H₃B·SMe₂ in toluene at 70 °C provides a convenient route to thin films of amorphous Ge, including its deposition onto soft substrates, such as polyethyleneterephthalate (PET). Accompanying computations give insight into the energetics of O^tBu/H exchange at Ge, and reveal a general thermodynamic preference for branched structures of [GeH₂]_n oligomers over linear forms as the Ge chain becomes longer. We also show that [Ge(O^tBu)₂] is a suitable pre-catalyst for the borylation of aldehydes.

Molecular Main Group Metal Hydrides

This review serves to document advances in the synthesis, versatile bonding, and reactivity of molecular main group metal hydrides within Groups 1, 2, and 12-16. Particular attention will be given to the emerging use of said hydrides in the rapidly expanding field of Main Group element-mediated catalysis. While this review is comprehensive in nature, focus will be given to research appearing in the open literature since 2001.

Frustrated Lewis Pair Chelation as a Vehicle for Low-Temperature Semiconductor Element and Polymer Deposition

The stabilization of silicon(II) and germanium(II) dihydrides by an intramolecular Frustrated Lewis Pair (FLP) ligand, PB, ⁱ Pr₂ P(C₆ H₄ )BCy₂ (Cy=cyclohexyl) is reported. The resulting hydride complexes [PB{SiH₂ }] and [PB{GeH₂ }] are indefinitely stable at room temperature, yet can deposit films of silicon and germanium, respectively, upon mild thermolysis in solution. Hallmarks of this work include: 1) the ability to recycle the FLP phosphine-borane ligand (PB) after element deposition, and 2) the single-source precursor [PB{SiH₂ }] deposits Si films at a record low temperature from solution (110 °C). The dialkylsilicon(II) adduct [PB{SiMe₂ }] was also prepared, and shown to release poly(dimethylsilane) [SiMe₂ ]_n upon heating. Overall, this study introduces a "closed loop" deposition strategy for semiconductors that steers materials science away from the use of harsh reagents or high temperatures.