Electron-Precise Semiconducting ReGa2Ge: Extending the IrIn3 Structure Type to Group 7 of the Periodic Table

Navigating the 18-n+m Isomers of PdSn2: Chemical Pressure Relief through Isolobal Bonds and Main Group Clustering

The 18-n electron-counting rule provides structural guidelines for electronically feasible transition metal (T)-main group (E) phases, contributing toward the goal of material design. However, the availability of numerous potential structure types at any electron count creates a challenge for the prediction of the preferred structures of specific compounds, as is illustrated by the concept of 18-n+m isomerism. In this Article, we explore the driving forces stabilizing one 18-n+m isomer over another with an analysis of the structure of PdSn2, a layered intergrowth of the fluorite and CuAl2 structure types. The DFT-reversed approximation Molecular Orbital (DFT-raMO) method reveals that PdSn2 and its hypothetical parent structures all adhere to bonding schemes approximating the electronic configurations expected from the 18-n rule, with various degrees of isolobal Pd-Pd bonding and Sn clustering. However, partial electron transfer between the Pd 5p orbitals to the Sn 5s orbitals contributes to the absence of convincing electronic pseudogaps near their Fermi energies. As such, there is no clear electronically driven preference among the structure types. This situation allows for atomic packing effects to prevail: DFT-Chemical Pressure (DFT-CP) analysis illustrates that in the fluorite-type parent structure, positive Pd-Sn CPs lead to overcompression of the Pd atoms and a stretching of the relatively open Sn sublattice. In contrast, in the CuAl2-type parent structure, Sn atoms cluster into tetrahedra, opening space for an expanded Pd environment and the formation of Pd-Pd interactions. However, the tetrahedral packing of the Sn atoms here leads to frustration between negative and positive Sn-Sn CPs. Through the development of the angular CP correlation function (CPcor+) as a tool to quantify frustration among interatomic interactions, we demonstrate how the observed PdSn2 structure balances these effects by tuning the degree of Sn-Sn clustering and expansion of the Pd environment. These observations point to generalizations for most 18-n+m isomers, where increased main group ligand clustering (+m) and isolobal bonds (+n) can accommodate compositions with different T and E atomic sizes.

Intermetallic Compound Re2Ga9Ge with Re- and Ge-Embedded Gallium Clusters: Synthesis, Crystal Structure, Chemical Bonding, and Physical Properties

Transition metal-based endohedral cluster intermetallic compounds are interesting electron phases, which frequently exhibit superconductivity with a peculiar interplay between the critical temperature and valence electron count. We present a new Re-based endohedral gallium cluster compound, Re₂Ga₉Ge. Its unique crystal structure (P4₂/mmc space group, a = 8.0452(3) Å, c = 6.7132(2) Å) is built by two types of gallium polyhedra: monocapped Archimedean antiprisms centered by rhenium atoms and tetrahedra containing a main-group element inside. The analysis of chemical bonding shows the presence of localized pairwise interactions between the p-block elements and the formation of multicenter bonds with the participation of d-orbitals of rhenium. In the electronic band structure, the Fermi level is located in a narrow pseudogap indicating the optimum band filling and thus explaining the virtual absence of a homogeneity range. The compound exhibits Pauli paramagnetism and metallic properties with unexpectedly low thermal conductivity. A sharp anomaly observed on the magnetic susceptibility and resistivity curves presumably indicates the electronic phase transition accompanied by charge ordering at the characteristic temperature of T * = 271 K in zero magnetic field.

Synthesis-enabled exploration of chiral and polar multivalent quaternary sulfides

An innovative method of synthesis is reported for the large and diverse (RE)6(TM) x (Tt)2S14 (RE = rare-earth, TM = transition metals, Tt = Si, Ge, and Sn) family of compounds (∼1000 members, ∼325 contain Si), crystallizing in the noncentrosymmetric, chiral, and polar P63 space group. Traditional synthesis of such phases involves the annealing of elements or binary sulfides at elevated temperatures. The atomic mixing of refractory components technique, presented here, allows the synthesis of known members and vastly expands the family to nearly the entire transition metal block, including 3d, 4d, and 5d TMs with oxidation states ranging from 1+ to 4+. Arc-melting of the RE, TM, and tetrel elements of choice forms an atomically-mixed precursor, which readily reacts with sulfur providing bulk powders and large single crystals of the target quaternary sulfides. Detailed in situ and ex situ experiments show the mechanism of formation, which involves multiphase binary sulfide intermediates. Crystal structures and metal oxidation states were corroborated by a combination of single crystal X-ray diffraction, elemental analysis, EPR, NMR, and SQUID magnetometry. The potential of La6(TM) x (Tt)2S14 compounds for non-linear optical applications was also demonstrated.

The Intermetallic Semiconductor ht-IrGa3: a Material in the in-Transformation State

The compound IrGa₃ was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group P4₂ /mnm, No. 136) with a = 6.4623(1) Å and c = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of ht-IrGa₃ is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for ht-IrGa₃ and for the solid solution IrGa_3-x Zn _x .