[(Ba19Cl4)(Ga6Si12O42S8)]: a Two-Dimensional Wide-Band-Gap Layered Oxysulfide with Mixed-Anion Chemical Bonding and Photocurrent Response

Rare-earth-based chalcogenides and their derivatives: an encouraging IR nonlinear optical material candidate

With the continuous development of laser technology and the increasing demand for lasers of different frequencies in the infrared (IR) spectrum, research on infrared nonlinear optical (NLO) crystals has garnered growing attention. Currently, the three main commercially available types of borate materials each have their drawbacks, which limit their applications in various areas. Rare-earth (RE)-based chalcogenide compounds, characterized by the unique f-electron configuration, strong positive charges, and high coordination numbers of RE cations, often exhibit distinctive optical responses. In the field of IR-NLO crystals, they have a research history spanning several decades, with increasing interest. However, there is currently no comprehensive review summarizing and analyzing these promising compounds. In this review, we categorize 85 representative examples out of more than 400 non-centrosymmetric (NCS) compounds into four classes based on the connection of different asymmetric building motifs: (1) RE-based chalcogenides containing tetrahedral motifs; (2) RE-based chalcogenides containing lone-pair-electron motifs; (3) RE-based chalcogenides containing [BS3] and [P2Q6] motifs; and (4) RE-based chalcohalides and oxychalcogenides. We provide detailed discussions on their synthesis methods, structures, optical properties, and structure-performance relationships. Finally, we present several favorable suggestions to further explore RE-based chalcogenide compounds. These suggestions aim to approach these compounds from a new perspective in the field of structural chemistry and potentially uncover hidden treasures within the extensive accumulation of previous research.

Mixed Rare-Earth Chalcogenide Borate Eu9-xRExMgS2B20O41 (RE = Sm, Gd) Featuring a 3D {[B20O41]22-}∞ Framework Connected by [B6O9(O0.5)6]6- and [B7O13(O0.5)3]8- Clusters

Rare-earth (RE) chalcogenide borates are very rarely discovered in view of the difficulties in synthesis though they have demonstrated attractive physical performances. Here, the first mixed RE chalcogenide borates Eu_5.4Sm_3.6MgS₂B₂₀O₄₁ (1) and Eu₃Gd₆MgS₂B₂₀O₄₁ (2) are synthesized by combining RE, sulfur, and borate ions into one structure. They crystallize in the centrosymmetric hexagonal space group P6₃/m, and their 3D honeycomb-like {[B₂₀O₄₁]^22-}_∞ open frameworks are built by [B₆O₉(O_0.5)₆]^6- and [B₇O₁₃(O_0.5)₃]^8- polyanionic clusters and consolidated by Mg²⁺ ions; both of which are formed by BO₄ tetrahedra and BO₃ planar triangles. The coordination modes of RE ions are rare REO₆S₂ bicapped trigonal prisms and REO₈S irregular polyhedra, and their band gaps are determined to be 2.25 and 2.22 eV, respectively. They exhibit antiferromagnetic interactions and distinct photocurrent responses. The corresponding theoretical calculations are also performed. The study of 1 and 2 perhaps stimulates interest in exploring new functional RE chalcogenide borates.

Rational Design of a Rare-Earth Oxychalcogenide Nd3 [Ga3 O3 S3 ][Ge2 O7 ] with Superior Infrared Nonlinear Optical Performance

Inorganic chalcogenides have been studied as the most promising infrared (IR) nonlinear optical (NLO) candidates for the past decades. However, it is proven difficult to discover high-performance materials that combine the often-incompatible properties of large energy gap (E_g ) and strong second harmonic generation (SHG) response (d_eff ), especially for rare-earth chalcogenides. Herein, centrosymmetric Cs₃ [Sb₃ O₆ ][Ge₂ O₇ ] is selected as a maternal structure and a new noncentrosymmetric rare-earth oxychalcogenide, namely, Nd₃ [Ga₃ O₃ S₃ ][Ge₂ O₇ ], is successfully designed and obtained by the module substitution strategy for the first time. Especially, Nd₃ [Ga₃ O₃ S₃ ][Ge₂ O₇ ] is the first case of breaking the trade-off relationship between wide E_g (>3.5 eV) and large d_eff (>0.5 × AgGaS₂ ) in rare-earth chalcogenide system, and thus displays an outstanding IR-NLO comprehensive performance. Detailed structure analyses and theoretical studies reveal that the NLO effect originates mainly from the cooperation of heteroanionic [GaO₂ S₂ ] and [NdO₂ S₆ ] asymmetric building blocks. This work not only presents an excellent rare-earth IR-NLO candidate, but also plays a crucial role in the rational structure design of other NLO materials in which both large E_g and strong d_eff are pursued.

Ba5Ga2SiO4S6: a Phase-Matching Nonlinear Optical Oxychalcogenide Design via Structural Regulation Originated from Heteroanion Introduction

Tailored structural regulation to obtain a new non-centrosymmetric (NCS) compound with excellent optical properties is highly desirable but remains a challenge for nonlinear optical (NLO) material design. In this work, centrosymmetric celsian-type BaGa₂Si₂O₈ was selected as a template structure, and a novel NCS oxychalcogenide, namely, Ba₅Ga₂SiO₄S₆, was successfully designed via the introduction of heteroanions under high-temperature solid-state conditions. Ba₅Ga₂SiO₄S₆ adopts the monoclinic space group of Cc (no. 9) and is formed by charges balancing Ba²⁺ cations and discrete [Ga₂SiO₄S₆] clusters made of corner-sharing [SiO₄] and [GaOS₃] tetrahedra. Notably, Ba₅Ga₂SiO₄S₆ exhibits the critical requirements as a potential UV NLO candidate, including a phase-matching second-harmonic generation intensity (∼1.0 × KDP), a beneficial laser-induced damage threshold (1.2 × KDP), a large birefringence (Δn = 0.10@546 nm), and a short UV absorption cutoff edge (ca. 0.26 μm). Furthermore, the theoretical calculation is implemented to provide a deeper analysis of the structure-activity relationship. The investigated example of structural regulation originated from heteroanion introduction in this study may offer a feasible strategy for high-performance NLO candidate design.

Ba3HgGa2S7: A Zero-Dimensional Quaternary Sulfide Featuring a Unique [Hg2Ga4S14]12- String and Exhibiting a High Photocurrent Response

The discovery of new types of metal sulfides is attractive because of their rich structures and diverse physical properties. Here, a novel quaternary sulfide, Ba₃HgGa₂S₇ (BHGS), is obtained by a solid-state reaction at 1123 K. It crystallizes in the monoclinic space group P2₁/c, and its zero-dimensional structure features two seesaw-like HgS₂ units and four GaS₄ tetrahedra, constructing a unique [Hg₂Ga₄S₁₄]^12- string. BHGS has a wide band gap of 3.64 eV and a large birefringence of 0.09 at 2100 nm. Specifically, BHGS exhibits a remarkable photocurrent response. This work may be extended to a new family of AE₃M^IIM^III₂Q₇ (AE = Mg, Ca, Sr, Ba; M^II = Zn, Cd, Hg; M^III = Al, Ga, In; Q = S, Se) chalcogenides.

AIn4S6Cl (A = Rb and Cs) and Pb5Sn3Q10Cl2 (Q = S and Se): quaternary chalcohalides with mixed anionic coordination exhibit photocurrent responses

Mixed-anionic compounds have caught considerable attention due to their flexible coordination manners and abundant physical properties. Four new chalcohalides RbIn₄S₆Cl (1), CsIn₄S₆Cl (2), Pb₅Sn₃S₁₀Cl₂ (3) and Pb₅Sn₃Se₁₀Cl₂ (4) were successfully obtained by the high-temperature halide salt flux method. Compounds 1 and 2 have layered structures that consist of octahedral InS₆ and aliovalent-anionic InS₃Cl units. Compounds 3 and 4 feature 3-D structural frameworks built by [Pb₄SnQ₈Cl₄]^6- and [PbSn₂Q₆]^2- (Q = S and Se) polyhedral chains, in which partial Pb²⁺ cations are coordinated by Q^2- and Cl^- anions. Compounds 1-4 have optical band gaps close to the wavelength range of visible light and exhibit significant photocurrent responses of 28.75 nA cm^-2, 55.12 nA cm^-2, 19.58 mA cm^-2, and 36.12 μA cm^-2 with on/off ratios 30.0, 2.5, 15.7 and 2.6, respectively, implying their potential for photovoltaic applications. To the best of our knowledge, compound 3 has the largest photocurrent response among all non-oxides. In addition, the activation energies of 1-4 are well below 0.3 eV, which makes these compounds interesting for potential applications in electrochemical devices. This work sheds light on the exploration of promising photocurrent response materials in the mixed-anionic compound system.

Na2GaS2Cl: a new sodium-rich chalcohalide with two-dimensional [GaS2]∞ layers and wide interlayer space

By introducing halogens to the A/Ga/Q (A = Na, K; Q = S, Se) system, one new chalcohalide namely Na₂GaS₂Cl was successfully obtained. It crystallizes in the orthorhombic space group Cmcm (63). Na₂GaS₂Cl has a layered structure consisting of two dimensional [GaS₂]_∞ layers which are stacked in "face to face" and "back to back" arrays and separated by Na⁺ and Cl^- ions. Interestingly, supertetrahedral building units [Ga₄S₁₀] (T2) which are rarely found in metal chalcogenides and metal chalcohalides are formed in this structure. Moreover, the distances of two adjacent layers are around four times larger than the ionic radius of the Na⁺ ion, which is very likely to provide a perfect environment for the storage and migration of Na⁺ ions. In particular, the volume concentration of the Na⁺ cations in this compound is as high as 1.54 × 10²² cm^-3. The UV-vis-NIR spectroscopy measurement reveals that the optical band gap of this title compound is 3.06 eV. The electronic structural calculations on Na₂GaS₂Cl show that the band gap is mainly determined by the [GaS₄] groups and Na-Cl ionic bonding.

A series of oxysulfides RE2M2S3O4 (RE = Y, Tm; M = Zr, Hf) featuring a unique MS3O4 motif and {[M2S3O4]8-}∞ wrinkle layer

Inorganic salts with multiple anions have recently received increasing interest in view of their structural diversity and multifunctional properties, and oxysulfides are one type of such salts. Here, three novel oxysulfides Y₂Zr₂S₃O₄ (1), Y₂Hf₂S₃O₄ (2), and Tm₂Z₂S₃O₄ (3) are obtained by high-temperature solid-state reactions. They crystallize with the orthorhombic space group Pbam and their three-dimensional structures featuring MS₃O₄ (M = Zr, Hf) motifs built an unprecedented {[M₂S₃O₄]^8-}_∞ wrinkle layer. Their optical band gaps are determined and 3 shows antiferromagnetic-like behavior. Theoretical calculations suggest their direct band gaps and the electron transfer between the frontier orbitals mainly occurred from S-3p and O-2p, to Y-4d and Zr-4d/Hf-5d orbitals.

A new type of novel salt-inclusion chalcogenide with ultralow thermal conductivity

The design and development of novel chalcogenides with ultralow thermal conductivity is extremely important but very challenging for promoting the efficiencies of thermoelectric (TE) materials. Herein, a new type of salt-inclusion chalcogenide (SIC), [Rb6Cl][RE23Mn7Se44] (RE = Ho-Yb), was discovered via a modified flux method. They possessed [RESe6] and [MSe6] (M = RE/Mn) octahedra as basic building units, which interlinked to form a three-dimensional quasi-NaCl-type [RE23Mn7Se44]5- host framework, where the [Rb6Cl]5+ guest ions resided. Interestingly, these isomorphic compounds showed ultralow thermal conductivities (0.28-0.37 W m-1 K-1) at 673 K, which are reported for the first time in SICs. This work not only enriches SIC chemistry but also broadens the application of SICs in the TE field.