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Marie A, Loos PF. Reference Energies for Valence Ionizations and Satellite Transitions. J Chem Theory Comput 2024; 20:4751-4777. [PMID: 38776293 PMCID: PMC11171335 DOI: 10.1021/acs.jctc.4c00216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 04/10/2024] [Accepted: 04/11/2024] [Indexed: 05/24/2024]
Abstract
Upon ionization of an atom or a molecule, another electron (or more) can be simultaneously excited. These concurrently generated states are called "satellites" (or shakeup transitions) as they appear in ionization spectra as higher-energy peaks with weaker intensity and larger width than the main peaks associated with single-particle ionizations. Satellites, which correspond to electronically excited states of the cationic species, are notoriously challenging to model using conventional single-reference methods due to their high excitation degree compared to the neutral reference state. This work reports 42 satellite transition energies and 58 valence ionization potentials (IPs) of full configuration interaction quality computed in small molecular systems. Following the protocol developed for the quest database [Véril, M.; Scemama, A.; Caffarel, M.; Lipparini, F.; Boggio-Pasqua, M.; Jacquemin, D.; and Loos, P.-F. Wiley Interdiscip. Rev.: Comput. Mol. Sci. 2021, 11, e1517], these reference energies are computed using the configuration interaction using a perturbative selection made iteratively (CIPSI) method. In addition, the accuracy of the well-known coupled-cluster (CC) hierarchy (CC2, CCSD, CC3, CCSDT, CC4, and CCSDTQ) is gauged against these new accurate references. The performances of various approximations based on many-body Green's functions (GW, GF2, and T-matrix) for IPs are also analyzed. Their limitations in correctly modeling satellite transitions are discussed.
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Affiliation(s)
- Antoine Marie
- Laboratoire de Chimie et Physique
Quantiques (UMR 5626), Université de Toulouse, CNRS, UPS, Toulouse 31062, France
| | - Pierre-François Loos
- Laboratoire de Chimie et Physique
Quantiques (UMR 5626), Université de Toulouse, CNRS, UPS, Toulouse 31062, France
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Zheng C, Deng J, Qi Y, Sun C, Cui D, Chen C, Zhu C, Wang S, Yuan J, Xie G, Li P, Chen R. Rational Design of Bipolar Host and Thermally Activated Delayed Fluorescence Materials in Donor-Acceptor Molecular Architecture: A Theoretical Study. J Phys Chem Lett 2024; 15:525-531. [PMID: 38194489 DOI: 10.1021/acs.jpclett.3c03068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Donor-acceptor (D-A) molecules have drawn massive attention recently in the design of high-performance materials, but the underlying reasons for the magic abilities of D-A architecture in building very different organic semiconductors are still unclear. Here, based on a series of experimentally bipolar host and thermally activated delayed fluorescence (TADF) molecules with the same donor but different acceptor units, it was found that TADF emitters have more effective charge transfer between donor and acceptor units than bipolar host molecules. More efficient conjugation effects between the donor and acceptor units of host materials were identified from the lower dihedral angles of the D-A structure, smaller and even negative charge transfer amount, shorter charge-transfer length, and larger hole-electron overlap extent. These findings with in-depth insights into different interaction models of donor and acceptor units shed important light on the molecular design of TADF emitters and bipolar materials in a D-A architecture.
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Affiliation(s)
- Chao Zheng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Junyuan Deng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Yuanyuan Qi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Chengxi Sun
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Dongyue Cui
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Cailin Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Chenxi Zhu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Shuang Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Jie Yuan
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
- Engineering Technology Training Center, Nanjing Vocational University of Industry Technology, 1 Yangshan North Road, Nanjing 210023, China
| | - Gaozhan Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Ping Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Runfeng Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), School of Computer Science, Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
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Hassan AU, Sumrra SH, Zubair M, Mohyuddin A, Mustafa G. Design and Exploration of Benzene Like Azobis Triazoles for Long-range Push-Pull Photo-Switching Attributes. J Fluoresc 2023:10.1007/s10895-023-03532-5. [PMID: 38157087 DOI: 10.1007/s10895-023-03532-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2023] [Accepted: 11/26/2023] [Indexed: 01/03/2024]
Abstract
This research paper presents a comprehensive study on the design and photovoltaic parameters of azobenzene type 24 photo switches (PSs) of triazole by density functional theory (DFT). The focus was on investigating how to create a long-range push-pull effect of different substituents on the PS properties for their application in photovoltaics by further substituent decoration. Their range of values for the maximum wavelength (λmax) ranged 315-556 nm while their HOMO-LUMO energies (Egaps) were 0.57-6.35eV. The stability of the PS was evaluated by measuring hardness (η) and softness (σ) values. Additionally, photovoltaic parameters such as open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and maximum power (Pmax) were calculated to assess the performance of the PS as photovoltaic materials. The results revealed that PSs 6 exhibited promising photovoltaic parameters to include Voc values ranging from 0.4-1.63eV, FF values ranging from 0.5438-0.929, Jsc values ranging from 19.27-50.75 mA/cm2, and Pmax values ranging from 14.72-75.91W. This indicates its potential as an efficient light-harvesting material for photovoltaic applications. Moreover, this study presents a pioneering investigation on the correlation between rotational velocity (R) and Mayer bond index (MBI) for the first time. The findings revealed a significant correlation between R and MBI, providing valuable insights into the structural dynamics of the PS. This novel finding opens up new avenues for understanding the structural dynamics of PS and their potential applications in various fields, including photovoltaics. The study provides valuable insights into the structure-property relationships of azobenzene-based PS and their suitability for photovoltaic devices. Further investigations are warranted to optimize the design of the PS, enhance their photovoltaic performance, and explore the underlying mechanisms of the correlation between R and MBIs.
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Affiliation(s)
- Abrar U Hassan
- Lunan Research Institute of Beijing Institute of Technology, 888 Zhengtai Road, Tengzhou, 277599, China.
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China.
| | - Sajjad H Sumrra
- Department of Chemistry, University of Gujrat, Gujrat, 50700, Punjab, Pakistan
| | - Muhammad Zubair
- Department of Chemistry, University of Gujrat, Gujrat, 50700, Punjab, Pakistan
| | - Ayesha Mohyuddin
- Department of Chemistry, School of Science, University of Management and Technology, Lahore, 54770, Pakistan
| | - Ghulam Mustafa
- Department of Chemistry, University of Gujrat, Gujrat, 50700, Punjab, Pakistan
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