Wang G, Pang T, Sun K, Luan S, Zhang Y, Yuan L, Jia R. High-performance layer-structured Si/Ga
2O
3/CH
3NH
3PbI
3 heterojunction photodetector based on a Ga
2O
3 buffer interlayer.
APPLIED OPTICS 2023;
62:A76-A82. [PMID:
36821301 DOI:
10.1364/ao.472922]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2022] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
Organic-inorganic metal halide perovskite-based photodetectors (PDs) have attracted great attention because they exhibit extraordinary optoelectronic performances due to advantages such as a low trap-state density and large absorption coefficient. As a buffer layer, G a 2 O 3 can block electron hole recombination, passivate an Si surface, reduce trap density, and improve the ability of electron tunneling. Here, we demonstrate a trilayer hybrid structure (S i/G a 2 O 3/C H 3 N H 3 P b I 3) composed of an n-type silicon wafer, G a 2 O 3 interlayer, and C H 3 N H 3 P b I 3 thin film. The effect of different G a 2 O 3 layer thicknesses on the characteristics of a PD was studied, which shows that the responsivity first increases and then decreases with an increase in the G a 2 O 3 film thickness; the optimized G a 2 O 3 thickness is 300 nm. Additionally, the optimal responsivity, detectivity, and the rise and decay times are 7.2m A W -1, 7.448×1010 Jones, and 39 and 1.7 ms, respectively. This device has a better performance because G a 2 O 3 and perovskite have a matched energy level. We believe our work could provide a new way to fabricate high-performance optoelectronic devices.
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