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Gatti G, Issing J, Rademaker L, Margot F, de Jong TA, van der Molen SJ, Teyssier J, Kim TK, Watson MD, Cacho C, Dudin P, Avila J, Edwards KC, Paruch P, Ubrig N, Gutiérrez-Lezama I, Morpurgo AF, Tamai A, Baumberger F. Flat Γ Moiré Bands in Twisted Bilayer WSe_{2}. PHYSICAL REVIEW LETTERS 2023; 131:046401. [PMID: 37566843 DOI: 10.1103/physrevlett.131.046401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Accepted: 06/26/2023] [Indexed: 08/13/2023]
Abstract
The recent observation of correlated phases in transition metal dichalcogenide moiré systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space mapping techniques to study moiré superlattice effects in 57.4° twisted WSe_{2} (tWSe_{2}). Our data reveal a split-off flat band that derives from the monolayer Γ states. Using advanced data analysis, we directly quantify the moiré potential from our data. We further demonstrate that the global valence band maximum in tWSe_{2} is close in energy to this flat band but derives from the monolayer K states which show weaker superlattice effects. These results constrain theoretical models and open the perspective that Γ-valley flat bands might be involved in the correlated physics of twisted WSe_{2}.
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Affiliation(s)
- G Gatti
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - J Issing
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - L Rademaker
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
- Department of Theoretical Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - F Margot
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - T A de Jong
- Huygens-Kamerlingh Onnes Laboratory, Leiden Institute of Physics, Leiden University, Leiden, The Netherlands
| | - S J van der Molen
- Huygens-Kamerlingh Onnes Laboratory, Leiden Institute of Physics, Leiden University, Leiden, The Netherlands
| | - J Teyssier
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - T K Kim
- Diamond Light Source, Harwell Campus, Didcot, OX11 0DE, United Kingdom
| | - M D Watson
- Diamond Light Source, Harwell Campus, Didcot, OX11 0DE, United Kingdom
| | - C Cacho
- Diamond Light Source, Harwell Campus, Didcot, OX11 0DE, United Kingdom
| | - P Dudin
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin-BP 48, 91192 Gif sur Yvette Cedex, France
| | - J Avila
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin-BP 48, 91192 Gif sur Yvette Cedex, France
| | - K Cordero Edwards
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - P Paruch
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - N Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - I Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - A F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - A Tamai
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
| | - F Baumberger
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
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Deng JP, Li HJ, Ma XF, Liu XY, Cui Y, Ma XJ, Li ZQ, Wang ZW. Self-Trapped Interlayer Excitons in van der Waals Heterostructures. J Phys Chem Lett 2022; 13:3732-3739. [PMID: 35445599 DOI: 10.1021/acs.jpclett.2c00565] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The self-trapped state (STS) of the interlayer exciton (IX) has aroused enormous interest owing to its significant impact on the fundamental properties of the van der Waals heterostructures (vdWHs). Nevertheless, the microscopic mechanisms of STS are still controversial. Herein, we study the corrections of the binding energies of the IXs stemming from the exciton-interface optical phonon coupling in four kinds of vdWHs and find that these IXs are in the STS for the appropriate ratio of the electron and hole effective masses. We show that these self-trapped IXs could be classified into type I with the increasing binding energy in the tens of millielectronvolts range, which are very agreement with the red-shift of the IX spectra in experiments, and type II with the decreasing binding energy, which provides a possible explanation for the blue-shift and broad line width of the IX's spectra at low temperatures. Moreover, these two types of exciton states could be transformed into each other by adjusting the structural parameters of vdWHs. These results not only provide an in-depth understanding for the self-trapped mechanism but also shed light on the modulations of IXs in vdWHs.
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Affiliation(s)
- Jia-Pei Deng
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Hong-Juan Li
- College of Physics and Intelligent Manufacturing Engineering, Chifeng University, Chifeng 024000, Inner Mongolia, China
| | - Xu-Fei Ma
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Xiao-Yi Liu
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Yu Cui
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Xin-Jun Ma
- Research Team of Extreme Condition Physics, College of Mathematics and Physics, Inner Mongolia Minzu University, Tongliao 028043, Inner Mongolia, China
| | - Zhi-Qing Li
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
| | - Zi-Wu Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, School of Science, Tianjin University, Tianjin 300354, Tianjin, China
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Liu Y, Zeng C, Yu J, Zhong J, Li B, Zhang Z, Liu Z, Wang ZM, Pan A, Duan X. Moiré superlattices and related moiré excitons in twisted van der Waals heterostructures. Chem Soc Rev 2021; 50:6401-6422. [PMID: 33942837 DOI: 10.1039/d0cs01002b] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
Recent advances in moiré superlattices and moiré excitons, such as quantum emission arrays, low-energy flat bands, and Mott insulators, have rapidly attracted attention in the fields of optoelectronics, materials, and energy research. The interlayer twist turns into a degree of freedom that alters the properties of the systems of materials, and the realization of moiré excitons also offers the feasibility of making artificial exciton crystals. Moreover, moiré excitons exhibit many exciting properties under the regulation of various external conditions, including spatial polarisation, alternating dipolar to alternating dipolar moments and gate-dependence to gate voltage dependence; all are pertinent to their applications in nano-photonics and quantum information. But the lag in theoretical development and the low-efficiency of processing technologies significantly limit the potential of moiré superlattice applications. In this review, we systematically summarise and discuss the recent progress in moiré superlattices and moiré excitons, and analyze the current challenges, and put forward relevant recommendations. There is no doubt that further research will lead to breakthroughs in their application and promote reforms and innovations in traditional solid-state physics and materials science.
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Affiliation(s)
- Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
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Jiang Y, Chen S, Zheng W, Zheng B, Pan A. Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures. LIGHT, SCIENCE & APPLICATIONS 2021; 10:72. [PMID: 33811214 PMCID: PMC8018964 DOI: 10.1038/s41377-021-00500-1] [Citation(s) in RCA: 93] [Impact Index Per Article: 31.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2020] [Revised: 02/08/2021] [Accepted: 02/24/2021] [Indexed: 05/06/2023]
Abstract
Van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits, which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit. As a consequence, numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons, including revealing their ultrafast formation, long population recombination lifetimes, and intriguing spin-valley dynamics. These outstanding properties ensure interlayer excitons with good transport characteristics, and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures. At present, a systematic and comprehensive overview of interlayer exciton formation, relaxation, transport, and potential applications is still lacking. In this review, we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field.
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Affiliation(s)
- Ying Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and College of Materials Science and Engineering, Hunan University, Changsha, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and College of Materials Science and Engineering, Hunan University, Changsha, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and College of Materials Science and Engineering, Hunan University, Changsha, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and College of Materials Science and Engineering, Hunan University, Changsha, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and College of Materials Science and Engineering, Hunan University, Changsha, China.
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D’Olimpio G, Genuzio F, Menteş TO, Paolucci V, Kuo CN, Al Taleb A, Lue CS, Torelli P, Farías D, Locatelli A, Boukhvalov DW, Cantalini C, Politano A. Charge Redistribution Mechanisms in SnSe 2 Surfaces Exposed to Oxidative and Humid Environments and Their Related Influence on Chemical Sensing. J Phys Chem Lett 2020; 11:9003-9011. [PMID: 33035062 PMCID: PMC8015219 DOI: 10.1021/acs.jpclett.0c02616] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2020] [Accepted: 10/01/2020] [Indexed: 06/11/2023]
Abstract
Tin diselenide (SnSe2) is a van der Waals semiconductor, which spontaneously forms a subnanometric SnO2 skin once exposed to air. Here, by means of surface-science spectroscopies and density functional theory, we have investigated the charge redistribution at the SnO2-SnSe2 heterojunction in both oxidative and humid environments. Explicitly, we find that the work function of the pristine SnSe2 surface increases by 0.23 and 0.40 eV upon exposure to O2 and air, respectively, with a charge transfer reaching 0.56 e-/SnO2 between the underlying SnSe2 and the SnO2 skin. Remarkably, both pristine SnSe2 and defective SnSe2 display chemical inertness toward water, in contrast to other metal chalcogenides. Conversely, the SnO2-SnSe2 interface formed upon surface oxidation is highly reactive toward water, with subsequent implications for SnSe2-based devices working in ambient humidity, including chemical sensors. Our findings also imply that recent reports on humidity sensing with SnSe2 should be reinterpreted, considering the pivotal role of the oxide skin in the interaction with water molecules.
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Affiliation(s)
- Gianluca D’Olimpio
- Department
of Physical and Chemical Sciences, University
of L’Aquila, via Vetoio, 67100 L’Aquila, AQ, Italy
| | - Francesca Genuzio
- Elettra-Sincrotrone
S.C.p.A., S.S. 14-km 163.5 in AREA Science Park, 34149 Trieste, Italy
| | - Tevfik Onur Menteş
- Elettra-Sincrotrone
S.C.p.A., S.S. 14-km 163.5 in AREA Science Park, 34149 Trieste, Italy
| | - Valentina Paolucci
- Department
of Industrial and Information Engineering and Economics, University of L’Aquila, Via G. Gronchi 18, I-67100 L’Aquila, Italy
| | - Chia-Nung Kuo
- Department
of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, 70101 Tainan, Taiwan
| | - Amjad Al Taleb
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Chin Shan Lue
- Department
of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, 70101 Tainan, Taiwan
| | - Piero Torelli
- Elettra-Sincrotrone
S.C.p.A., S.S. 14-km 163.5 in AREA Science Park, 34149 Trieste, Italy
- Consiglio
Nazionale delle Ricerche (CNR)-Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science
Park S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Daniel Farías
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto
‘Nicolás Cabrera’, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, 28049 Madrid, Spain
| | - Andrea Locatelli
- Elettra-Sincrotrone
S.C.p.A., S.S. 14-km 163.5 in AREA Science Park, 34149 Trieste, Italy
| | - Danil W. Boukhvalov
- College
of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing 210037, P. R. China
- Theoretical
Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia
| | - Carlo Cantalini
- Department
of Industrial and Information Engineering and Economics, University of L’Aquila, Via G. Gronchi 18, I-67100 L’Aquila, Italy
| | - Antonio Politano
- Department
of Physical and Chemical Sciences, University
of L’Aquila, via Vetoio, 67100 L’Aquila, AQ, Italy
- CNR-IMM
Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121 Catania, Italy
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