Versatile procedure for the correction of non-isochromatism in XPEEM spectroscopic imaging

Non-isochromatism in X-ray PhotoEmission Electron Microscopy (XPEEM) may result in unwanted artifacts especially when working with large field of views. The lack of isochromatism of XPEEM images may result from multiple factors, for instance the energy dispersion of the X-rays on the sample or the effect of one or more dispersive elements in the electron optics of the microscope, or the combination of both. In practice, the photon energy or the electron kinetic energy may vary across the image, complicating image interpretation and analysis. The effect becomes severe when imaging at low magnification upon irradiation with high energy photons. Such imaging demands for a large X-ray illuminating spot size usually achieved by opening the exit slit of the X-ray monochromator while reducing the monochromaticity of the irradiating light. However, we show that the effect is linear and can be fully removed. A versatile correction procedure is presented which leads to true monochromatic photoelectron images at improved signal-to-noise ratio. XPEEM data recorded at the nanospectroscopy beamline of the Elettra synchrotron radiation facility illustrate the working principle of the procedure. Also, reciprocal space XPEEM data such as angle-resolved photoelectron spectroscopy (ARPES) momentum plots suffer from linear energy dispersion artifacts which can be corrected in a similar way. Representative data acquired from graphene synthesized on copper by chemical vapor deposition prove the benefits of the correction procedure.

Black or red phosphorus yields the same blue phosphorus film

After the discovery of graphene, many other 2D materials have been predicted theoretically and successfully prepared. In this context, single-sheet black phosphorus - phosphorene - is emerging as a viable contender in the field of (2D) semiconductors. Phosphorene offers high carrier mobility and an anisotropic structure that gives rise to a modulation of physical and chemical properties. This opens the way to many novel and fascinating applications related to field-effect transistors and optoelectronic devices. In previous studies, a single layer of blue phosphorene intermixed with Au atoms was grown using purified black phosphorus as a precursor. Starting from the observation that phosphorus vapor mainly consists of P clusters, in this work we aimed at obtaining blue phosphorus using much less expensive purified red phosphorus as an evaporant. By means of microscopy, spectroscopy and diffraction experiments, we show that black or red phosphorus deposition on Au(111) substrates yields the same blue phosphorus film.

Moiré Superlattice Effects and Band Structure Evolution in Near-30-Degree Twisted Bilayer Graphene

In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at M and across 3 eV from the Dirac points. In this energy range, we resolve several moiré minibands and detect signatures of secondary Dirac points in the reconstructed dispersions. For twists θ > 21.8°, the low-energy minigaps are not due to cone anticrossing as is the case at smaller twist angles but rather due to moiré scattering of electrons in one graphene layer on the potential of the other which generates intervalley coupling. Our work demonstrates the robustness of the mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles. It also shows that large-angle tBLG hosts electronic minigaps and van Hove singularities of different origin which, given recent progress in extreme doping of graphene, could be explored experimentally.

A UHV MOKE magnetometer complementing XMCD-PEEM at the Elettra Synchrotron

We report on a custom-built UHV-compatible Magneto-Optical Kerr Effect (MOKE) magnetometer for applications in surface and materials sciences, operating in tandem with the PhotoEmission Electron Microscope (PEEM) endstation at the Nanospectroscopy beamline of the Elettra synchrotron. The magnetometer features a liquid-nitrogen-cooled electromagnet that is fully compatible with UHV operation and produces magnetic fields up to about 140 mT at the sample. Longitudinal and polar MOKE measurement geometries are realized. The magneto-optical detection is based on polarization analysis using a photoelastic modulator. The sample manipulation system is fully compatible with that of the PEEM, making it possible to exchange samples with the beamline endstation, where complementary X-ray imaging and spectroscopy techniques are available. The magnetometer performance is illustrated by experiments on cobalt ultra-thin films, demonstrating close to monolayer sensitivity. The advantages of combining in situ growth, X-ray Magnetic Circular Dichroism imaging (XMCD-PEEM) and MOKE magnetometry into a versatile multitechnique facility are highlighted.

Erratum: Fast Domain Wall Motion Governed by Topology and Œrsted Fields in Cylindrical Magnetic Nanowires [Phys. Rev. Lett. 123, 217201 (2019)]

This corrects the article DOI: 10.1103/PhysRevLett.123.217201.

Pnictogens Allotropy and Phase Transformation during van der Waals Growth

With their ns2 np3 valence electronic configuration, pnictogens are the only system to crystallize in layered van der Waals (vdW) and quasi-vdW structures throughout the group. Light pnictogens crystallize in the A17 phase, and bulk heavier elements prefer the A7 phase. Herein, we demonstrate that the A17 of heavy pnictogens can be stabilized in antimonene grown on weakly interacting surfaces and that it undergoes a spontaneous thickness-driven transformation to the stable A7 phase. At a critical thickness of ∼4 nm, A17 antimony transforms from AB- to AA-stacked α-antimonene by a diffusionless shuffle transition followed by a gradual relaxation to the A7 phase. Furthermore, the competition between A7- and A17-like bonding affects the electronic structure of the intermediate phase. These results highlight the critical role of the atomic structure and substrate-layer interactions in shaping the stability and properties of layered materials, thus enabling a new degree of freedom to engineer their performance.

Charge Redistribution Mechanisms in SnSe2 Surfaces Exposed to Oxidative and Humid Environments and Their Related Influence on Chemical Sensing

Tin diselenide (SnSe2) is a van der Waals semiconductor, which spontaneously forms a subnanometric SnO2 skin once exposed to air. Here, by means of surface-science spectroscopies and density functional theory, we have investigated the charge redistribution at the SnO2-SnSe2 heterojunction in both oxidative and humid environments. Explicitly, we find that the work function of the pristine SnSe2 surface increases by 0.23 and 0.40 eV upon exposure to O2 and air, respectively, with a charge transfer reaching 0.56 e-/SnO2 between the underlying SnSe2 and the SnO2 skin. Remarkably, both pristine SnSe2 and defective SnSe2 display chemical inertness toward water, in contrast to other metal chalcogenides. Conversely, the SnO2-SnSe2 interface formed upon surface oxidation is highly reactive toward water, with subsequent implications for SnSe2-based devices working in ambient humidity, including chemical sensors. Our findings also imply that recent reports on humidity sensing with SnSe2 should be reinterpreted, considering the pivotal role of the oxide skin in the interaction with water molecules.

Correction: Fine tuning of ferromagnet/antiferromagnet interface magnetic anisotropy for field-free switching of antiferromagnetic spins

Correction for 'Fine tuning of ferromagnet/antiferromagnet interface magnetic anisotropy for field-free switching of antiferromagnetic spins' by M. Slęzak et al., Nanoscale, 2020, DOI: 10.1039/d0nr04193a.

Fine tuning of ferromagnet/antiferromagnet interface magnetic anisotropy for field-free switching of antiferromagnetic spins

We show that in a uniform thickness NiO(111)/Fe(110) epitaxial bilayer system, at given temperature near 300 K, two magnetic states with orthogonal spin orientations can be stabilized in antiferromagnetic NiO. Field-free, reversible switching between these two antiferromagnetic states is demonstrated. The observed phenomena arise from the unique combination of precisely tuned interface magnetic anisotropy, thermal hysteresis of spin reorientation transition and interfacial ferromagnet/antiferromagnet exchange coupling. The possibility of field-free switching between two magnetic states in an antiferromagnet is fundamentally interesting and can lead to new ideas in heat assisted magnetic recording technology.

In-Plane Magnetic Domains and Néel-like Domain Walls in Thin Flakes of the Room Temperature CrTe2 Van der Waals Ferromagnet

The recent discovery of magnetic van der Waals (vdW) materials triggered a wealth of investigations in materials science and now offers genuinely new prospects for both fundamental and applied research. Although the catalog of vdW ferromagnets is rapidly expanding, most of them have a Curie temperature below 300 K, a notable disadvantage for potential applications. Combining element-selective X-ray magnetic imaging and magnetic force microscopy, we resolve at room temperature the magnetic domains and domain walls in micron-sized flakes of the CrTe₂ vdW ferromagnet. Flux-closure magnetic patterns suggesting an in-plane six-fold symmetry are observed. Upon annealing the material above its Curie point (315 K), the magnetic domains disappear. By cooling back the sample, a different magnetic domain distribution is obtained, indicating material stability and lack of magnetic memory upon thermal cycling. The domain walls presumably have Néel texture, are preferentially oriented along directions separated by 120°, and have a width of several tens of nanometers. Besides microscopic mapping of magnetic domains and domain walls, the coercivity of the material is found to be of a few millitesla only, showing that the CrTe₂ compound is magnetically soft. The coercivity is found to increase as the volume of the material decreases.

Coherent x-ray scattering in an XPEEM setup

X-ray photoemission electron microscopy, one of the most successful imaging tools at synchrotrons, is known to have limitations related to the application of external fields and to the short electron mean free path. In order to overcome such issues, we adapt an existing XPEEM instrument to simultaneously perform coherent x-ray scattering measurements in reflectivity mode, thus adding a complementary method to XPEEM. Photon-in photon-out x-ray scattering provides the sensitivity to buried interfaces as well as the possibility to work under external fields, which is challenging when using charged particles for imaging. XPEEM, in turn, greatly alleviates the difficulties associated with the reconstruction methods used in coherent diffraction imaging. The combination of the two methods is demonstrated for an artifical spin-ice lattice showing both chemical and magnetic contrast.

Realization of Symmetry-Enforced Two-Dimensional Dirac Fermions in Nonsymmorphic α-Bismuthene

Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and nontrivial Berry phase play a pivotal role in the electronic, optical, mechanical, and chemical properties of 2D Dirac materials. The known 2D Dirac materials are gapless only within certain approximations, for example, in the absence of spin-orbit coupling (SOC). Here, we report a route to establishing robust Dirac cones in 2D materials with nonsymmorphic crystal lattice. The nonsymmorphic symmetry enforces Dirac-like band dispersions around certain high-symmetry momenta in the presence of SOC. Through μ-ARPES measurements, we observe Dirac-like band dispersions in α-bismuthene. The nonsymmorphic lattice symmetry is confirmed by μ-low-energy electron diffraction and scanning tunneling microscopy. Our first-principles simulations and theoretical topological analysis demonstrate the correspondence between nonsymmorphic symmetry and Dirac states. This mechanism can be straightforwardly generalized to other nonsymmorphic materials. The results enlighten the search of symmetry-enforced Dirac fermions in the vast uncharted world of nonsymmorphic 2D materials.

Fast Domain Wall Motion Governed by Topology and Œrsted Fields in Cylindrical Magnetic Nanowires

While the usual approach to tailor the behavior of condensed matter and nanosized systems is the choice of material or finite-size or interfacial effects, topology alone may be the key. In the context of the motion of magnetic domain walls (DWs), known to suffer from dynamic instabilities with low mobilities, we report unprecedented velocities >600  m/s for DWs driven by spin-transfer torques in cylindrical nanowires made of a standard ferromagnetic material. The reason is the robust stabilization of a DW type with a specific topology by the Œrsted field associated with the current. This opens the route to the realization of predicted new physics, such as the strong coupling of DWs with spin waves above >600  m/s.

Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3

We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO₃. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO₃(1 1 0) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO₃/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic fields, suggesting that field-induced canting of the AFM spins plays an important role. In contrast, around the coercive field, no detectable SMR signal is observed, indicating that the SMR of the AFM and canting magnetization components cancel out. Below 50 K, the SMR amplitude increases sizably by a factor of two as compared to room temperature, which likely correlates with the long-range ordering of the Sm ions. Our results show that the SMR is a sensitive technique for non-equilibrium spin systems of non-collinear AFMs.

In-Gap States and Band-Like Transport in Memristive Devices

Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface.

Magnetic Patterning by Electron Beam-Assisted Carbon Lithography

We report on the proof of principle of a scalable method for writing the magnetic state by electron-stimulated molecular dissociative adsorption on ultrathin Co on Re(0001). Intense microfocused low-energy electron beams are used to promote the formation of surface carbides and graphitic carbon through the fragmentation of carbon monoxide. Upon annealing at the CO desorption temperature, carbon persists in the irradiated areas, whereas the clean surface is recovered elsewhere, giving origin to chemical patterns with nanometer-sharp edges. The accumulation of carbon is found to induce an in-plane to out-of-plane spin reorientation transition in Co, manifested by the appearance of striped magnetic domains. Irradiation at doses in excess of 1000 L of CO followed by ultrahigh vacuum annealing at 380 °C determines the formation of a graphitic overlayer in the irradiated areas, under which Co exhibits out-of-plane magnetic anisotropy. Domains with opposite magnetization are separated here by chiral Neél walls. Our fabrication protocol adds lateral control to spin reorientation transitions, permitting to tune the magnetic anisotropy within arbitrary regions of mesoscopic size. We envisage applications in the nano-engineering of graphene-spaced stacks exhibiting the desired magnetic state and properties.

Synthesis of Antimonene on Germanium

The lack of large-area synthesis processes on substrates compatible with industry requirements has been one of the major hurdles facing the integration of 2D materials in mainstream technologies. This is particularly the case for the recently discovered monoelemental group V 2D materials which can only be produced by exfoliation or growth on exotic substrates. Herein, to overcome this limitation, we demonstrate a scalable method to synthesize antimonene on germanium substrates using solid-source molecular beam epitaxy. This emerging 2D material has been attracting a great deal of attention due to its high environmental stability and its outstanding optical and electronic properties. In situ low energy electron microscopy allowed the real time investigation and optimization of the 2D growth. Theoretical calculations combined with atomic-scale microscopic and spectroscopic measurements demonstrated that the grown antimonene sheets are of high crystalline quality, interact weakly with germanium, exhibit semimetallic characteristics, and remain stable under ambient conditions. This achievement paves the way for the integration of antimonene in innovative nanoscale and quantum technologies compatible with the current semiconductor manufacturing.

Exceptional Dewetting of Organic Semiconductor Films: The Case of Dinaphthothienothiophene (DNTT) at Dielectric Interfaces

The novel organic semiconductor dinaphthothienothiophene (DNTT) has gained considerable interest because its large charge carrier mobility and distinct chemical robustness enable the fabrication of organic field effect transistors with remarkable long-term stability under ambient conditions. Structural aspects of DNTT films and their control, however, remain so far largely unexplored. Interestingly, the crystalline structure of DNTT is rather similar to that of the prototypical pentacene, for which the molecular orientation in crystalline thin films can be controlled by means of interface-mediated growth. Combining atomic force microscopy, near-edge X-ray absorption fine structure, photoelectron emission microscopy, and X-ray diffraction, we compare substrate-mediated control of molecular orientation, morphology, and wetting behavior of DNTT films on the prototypical substrates SiO₂ and graphene as well as technologically relevant dielectric surfaces (SiO₂ and metal oxides that were pretreated with self-assembled monolayers (SAMs)). We found an immediate three-dimensional growth on graphene substrates, while an interfacial wetting layer is formed on the other substrates. Rather surprisingly, we observe distinct temporal changes of DNTT thin films on SiO₂ and the SAM-treated dielectric substrates, which exhibit a pronounced dewetting and island formation on time scales of minutes to hours, even under ambient conditions, leading to a breakup of the initially closed wetting layer. These findings are unexpected in view of the reported long-time stability of DNTT-based devices. Therefore, their future consideration is expected to enable the further improvement of such applications, especially since these structural modifications are equivalently observed also on the SAM-treated dielectric surfaces, which are commonly used in device processing.