Photogenerated-Carrier Separation and Transfer in Two-Dimensional Janus Transition Metal Dichalcogenides and Graphene van der Waals Sandwich Heterojunction Photovoltaic Cells

Functionalized hexagonal boron nitride bilayers: desirable electro-optical properties for optoelectronic applications

Structural, electronic, and optical properties of functionalized hexagonal boron nitride (h-BN) bilayer were deeply explored by carrying out the PBE + G0W0 + BSE calculations. Hydrogenation/hydrofluorination/fluorination can cause the planar h-BN bilayer to form a novel diamane-like monolayer by interfacial sp3 atom bonding. These functionalized h-BN bilayers are estimated to be stable dynamically due to their phonon dispersions. The functionalization on h-BN bilayer can induce its electronic nature to be transformed from an indirect wide-gap insulator to direct narrow-gap semiconductor, which is desirable for its application in optoelectronics. In particular, hydrogenated and hydrofluorinated h-BN bilayers have strong absorbance coefficients for the near-infrared and visible part of the incident sunlight (larger than 105 cm-1). More interestingly, the binding energy of the observed first bright exciton can achieve a value beyond 1 eV, which can effectively reduce the recombination of photogenerated electron-hole pairs. These results are potentially important for extending the applications of the h-BN bilayer in optoelectronic devices.

Identification of Exciton Complexes in Charge-Tunable Janus WSeS Monolayers

Janus transition-metal dichalcogenide monolayers are artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>18 meV) spectra obfuscating their specific excitonic origin. Here, we identify the neutral and the negatively charged inter- and intravalley exciton transitions in Janus WSeS monolayers with ∼6 meV optical line widths. We integrate Janus monolayers into vertical heterostructures, allowing doping control. Magneto-optic measurements indicate that monolayer WSeS has a direct bandgap at the K points. Our results pave the way for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and the development of Janus-based optoelectronic devices, which requires charge-state control and integration into vertical heterostructures.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

Two Janus Ga2STe monolayers and their electronic, optical, and photocatalytic properties

Recently, two-dimensional Janus materials have attracted increasing interest due to their unique structure and novel properties. Based on density-functional and many-body perturbation theories (i.e. DFT + G₀W₀ + BSE methods), the electronic, optical, and photocatalytic properties of Janus Ga₂STe monolayers with two configurations are explored systematically. It is found that the two Janus Ga₂STe monolayers exhibit high dynamical and thermal stabilities and have desirable direct gaps of about 2 eV at the G₀W₀ level. Their optical absorption spectra are dominated by the enhanced excitonic effects, in which bright bound excitons possess moderate binding energies of about 0.6 eV. Most interestingly, Janus Ga₂STe monolayers show high light absorption coefficients (larger than 10⁶ cm^-1) in the visible light region, effective spatial separation of photoexcited carriers, and suitable band edge positions, which make them potential candidates for photoelectronic and photocatalytic devices. These observed findings enrich the deep understanding of the properties of Janus Ga₂STe monolayers.

Optoelectronic properties and applications of two-dimensional layered semiconductor van der Waals heterostructures: perspective from theory

Van der Waals heterostructures (vdWHs) which combine two different materials together have attracted extensive research attentions due to the promising applications in optoelectronic and electronic devices, the investigations from theoretical simulations can not only predict the novel properties and the interfacial coupling, but also provide essential guidance for experimental verification and fabrications. This review summarizes the recent theoretical studies on electronic and optical properties of two-dimensional semiconducting vdWHs. The characteristics of different band alignments are discussed, together with the optoelectronic modulations from external fields and the promising applications in solar cells, tunneling field-effect transistors and photodetectors. At the end of the review, the further perspective and possible research problems of the vdWHs are also presented.

Two-dimensional MXO/MoX2 (M = Hf, Ti and X = S, Se) van der Waals heterostructure: a promising photovoltaic material

Nanoscale materials with multifunctional properties are necessary for the quick development of high-performance devices for a wide range of applications, hence theoretical research into new two-dimensional (2D) materials is encouraged. 2D materials have a distinct crystalline structure that leads to intriguing occurrences. Stacking diverse two-dimensional (2D) materials has shown to be an efficient way for producing high-performance semiconductor materials. We explored a 2D nanomaterial family, an MXO/MoX₂ heterostructure (M = Hf, Ti and X = S, Se), for their various applications using first-principles calculations. We discovered that all of the heterostructure materials utilized are direct band gap semiconductors with band gaps ranging from 1.0 to 2.0 eV, with the exception of hexagonal HfSeO/MoSe₂, which has a band gap of 0.525 eV. The influence of strain on the band gap of this HfSeO/MoSe₂ material was investigated. In the visible range, we obtained promising optical responses with a high-power conversion efficiency. With fill factors of 0.5, MXO/MoX₂ photovoltaic cells showed great PCE of up to 17.8%. The tunable electronic characteristics of these two-dimensional materials would aid in the development of energy conversion devices. According to our findings, the 2D Janus heterostructure of MXO/MoX₂ (M = Hf, Ti and X = S, Se) material is an excellent choice for photovoltaic solar cells.

Nanoscale materials with multifunctional properties are necessary for the quick development of high-performance devices for a wide range of applications, hence theoretical research into new two-dimensional (2D) materials is encouraged.

cis/trans-Isomeric Cation Tuning Photoluminescence and Photodetection in 2D Perovskites

Cationic components in the organic-inorganic hybrid perovskites (OIHPs) play an important role in the arrangement and tilting of the inorganic part that is responsible for semiconducting, luminescent, and photoelectronic properties. Herein, we report two 2D OIHP compounds, (cis-4ACHO)₂(H₃OBr)PbBr₄ (1) and (trans-4ACHO)₂(H₃OCl)PbBr₄ (2) (4ACHO = 4-aminocyclohexanol), showing both photoluminescence (PL) and photodetection (PD) that are tuned by the cis- and trans configurational isomerism of 4ACHO. Crystals of 1 and 2 exhibit similar packing structures but with different crystallographic symmetries. Compound 2 displays a broadband white-light emission with a higher PL efficiency (6.6%) than 1 (2.1%) that emits narrowband blue light while the PD property of 1 is better than 2 with a higher on/off ratio under the same conditions. The PL and PD of the two compounds show a seesaw relationship, which provides a new perspective for understanding the PL and PD properties in OIHPs.

Study of Two-Dimensional Janus WXY (X≠Y= S, Se, and Te) Trilayer Homostructures for Photovoltaic Applications Using DFT Screening of Different Stacking Patterns

Based on the first-principles density functional theory, Janus WXY (X ≠ Y = S, Se, and Te) trilayer homostructures for different stacking patterns are studied in this work to analyze their appropriateness in fabricating photovoltaic (PV) devices. A total of fifteen trilayer homostructures are proposed, corresponding to the suitable five stacking patterns, such as AAA, AA'A, ABA, AB'A, and A'BA' for each Janus WXY (X ≠ Y = S, Se, and Te) material. Structural and energetic parameters for all the fifteen structures are evaluated and compared to find energetically stable structures, and dynamic stability is confirmed by phonon dispersion curves. All these configurations being homostructure, lattice mismatch is found to be very low (∼0.05%), unlike heterostructure, making them feasible for optoelectronics and PV applications. WSSe AAA, WSSe AA'A, and WSeTe AA'A are dynamically stable along with negative binding energy and show type-II band alignment, enabling effective spatial carrier separation of photogenerated carriers. The optical properties of dynamically stable WSSe AAA and WSSe AA'A structures are also calculated, and the absorption coefficients at the visible light region are found to be ∼3.5 × 10⁵ cm^-1, which is comparable to the perovskite material absorption coefficient. Moreover, we have compared the optical characteristics of dynamically stable WSSe AAA and WSSe AA'A structures with their monolayer structures to realize the significance of stacking trilayer structures. Electrical properties such as mobility and conductivity for dynamically stable WSSe AAA and WSSe AA'A structures are evaluated to suggest them as a probable efficient material in PV technology.

Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb2GeTe4 with Asymmetric Architecture for Ultrafast Photonics

Ultrafast photonics has become an interdisciplinary topic of great consequence due to the spectacular progress of compact and efficient ultrafast pulse generation. Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb₂GeTe₄, an emerging class of ternary narrow-gap semiconductors, was used as a real saturable absorber (SA), which manifests superior wide-range optical absorption. The crystallization form and growth mechanism of Nb₂GeTe₄ were revealed by a thermodynamic phase diagram. Furthermore, the Nb₂GeTe₄-SA showed reliable saturation intensity and larger modulation depth, ascribed to a built-in electric field driven by the asymmetric crystal architecture confirmed via X-ray diffraction, polarized Raman spectra, and scanning transmission electron microscopy. Based on the Nb₂GeTe₄-SA, femtosecond mode-locked operation with good overall performance was achieved by a properly designed ring cavity. These results suggest that Nb₂GeTe₄ shows great promise for ultrafast photonic applications and arouse interests in exploring the intriguing properties of the ternary van der Waals material family.

Out-of-plane dipole-modulated photogenerated carrier separation and recombination at Janus-MoSSe/MoS2 van der Waals heterostructure interfaces: Ab initio time-domain study

Out-of-plane mirror symmetry-breaking provides a powerful tool for engineering the electronic property and the exciton behavior of two-dimensional materials. Here, combined the time-domain density functional theory with nonadiabatic dynamics, we...

Janus monolayer HfSO with improved optical properties as a novel material for photovoltaic and photocatalyst applications

First principles calculations were performed to investigate the photocatalytic behavior of 2D Janus monolayer HfSO at equilibrium and under the influence of strains and external electric fields.

Anisotropic Rashba splitting in Pt-based Janus monolayers PtXY (X,Y = S, Se, or Te)

Recent studies have demonstrated the feasibility of synthesizing two-dimensional (2D) Janus materials which possess intrinsic structural asymmetry. Hence, we performed a systematic first-principles study of 2D Janus transition metal dichalcogenide (TMD) monolayers based on PtXY (X,Y = S, Se, or Te). Our calculated formation energies show that these monolayer Janus structures retain the 1T phase. Furthermore, phonon spectral calculations confirm that these Janus TMD monolayers are thermodynamically stable. We found that PtSSe, PtSTe, and PtSeTe exhibit an insulating phase with indirect band gaps of 2.108, 1.335, and 1.221 eV, respectively, from hybrid functional calculations. Due to the breaking of centrosymmetry in the crystal structure, the spin-orbit coupling (SOC)-induced anisotropic Rashba splitting is observed around the M point. The calculated Rashba strengths from M to Γ (α ^M-Γ _R) are 1.654, 1.103, and 0.435 eV Å^-1, while the calculated values from M to K (α ^M-K _R) are 1.333, 1.244, and 0.746 eV Å^-1, respectively, for PtSSe, PtSTe, and PtSeTe. Interestingly, the spin textures reveal that the spin-splitting is mainly attributed to the Rashba effect. However, a Dresselhaus-like contribution also plays a secondary role. Finally, we found that the band gaps and the strength of the Rashba effect can be further tuned through biaxial strain. Our findings indeed show that Pt-based Janus TMDs demonstrate the potential for spintronics applications.

Novel Janus diamane C4FCl: a stable and moderate bandgap semiconductor with a huge excitonic effect

Semiconducting two-dimensional Janus materials have drawn increasing attention due to their novel optoelectronic properties. Here, employing first-principles calculations, we systematically explore the stability and electronic and optical properties of Janus diamane C₄FCl. The energetic and dynamical stabilities of C₄FCl have been verified using the cohesive energy and phonon dispersion calculations. It is predicted to possess a direct bandgap of ∼3 eV at the Γ point using the G₀W₀ method. Also, the optical absorption spectrum of C₄FCl is dominated by the enhanced excitonic effects, in which a bright bound exciton with a large binding energy beyond 1 eV can be observed. The light absorption coefficient of C₄FCl for sunlight can be as large as 8 × 10⁴ cm^-1 in the range of visible and near-ultraviolet light, suggesting its potential for optoelectronic applications. These findings enable a deep understanding of the physical properties of novel C₄FCl.

Electric Field Tunable Ultrafast Interlayer Charge Transfer in Graphene/WS2 Heterostructure

Van der Waals heterostructures composed of two-dimensional materials offer an unprecedented control over their properties and have attracted tremendous research interest in various optoelectronic applications. Here, we study the photoinduced charge transfer in graphene/WS₂ heterostructure by time-dependent density functional theory molecular dynamics. Our results show that holes transfer from graphene to WS₂ two times faster than electrons, and the occurrence of interlayer charge transfer is found correlated with vibrational modes of graphene and WS₂. It is further demonstrated that the carrier dynamics can be efficiently modulated by external electric fields. Detailed analysis confirms that the carrier transfer rate at heterointerface is governed by the coupling between donor and acceptor states, which is the result of the competition between interlayer and intralayer relaxation processes. Our study provides insights into the understanding of ultrafast interlayer charge transfer processes in heterostructures and broadens their future applications in photovoltaic devices.

Electronic properties of Janus MXY/graphene (M = Mo, W; X ≠ Y = S, Se) van der Waals structures: a first-principles study

Based on the first-principles calculations, we studied the intrinsic dipole moment and electronic properties of Janus MXY (M = Mo, W; X ≠ Y = S, Se) monolayers, bilayers and heterostructures with graphene, and the possibility of MXY encapsulating graphene. The results show that Janus MXY monolayer has an intrinsic dipole moment and a direct band gap. However, for MXY bilayers strong interlayer coupling will cause direct to indirect band gap transition, and the existence of the dipole moment leads to a significantly large interlayer band offset, being the driving force for the formation of interlayer excitons. In MXY/graphene heterostructures, changes in the direction of intrinsic dipole moment will cause a change in Schottky barrier height and even the transition between p- and n-type Schottky contacts. Independent of the interface atomic layer of Janus MXY, on one hand, the Dirac cone still exists in graphene, proving that MXY is an ideal coating material. On the other hand, the type-II band alignment will disappear as the intrinsic dipole moment disappears, confirming that the intrinsic dipole moment plays a vital role in the formation of a large band offset. Our results provide guidance for the study of interlayer excitonic states, the experimental construction of atomically thin p-n junctions and the encapsulation of graphene.