Realizing CsPbBr3 Light-Emitting Diode Arrays Based on PDMS Template Confined Solution Growth of Single-Crystalline Perovskite

Precise arraying of perovskite single crystals through droplet-assisted self-alignment

Patterned arrays of perovskite single crystals can avoid signal cross-talk in optoelectronic devices, while precise crystal distribution plays a crucial role in enhancing device performance and uniformity, optimizing photoelectric characteristics, and improving optical management. Here, we report a strategy of droplet-assisted self-alignment to precisely assemble the perovskite single-crystal arrays (PSCAs). High-quality single-crystal arrays of hybrid methylammonium lead bromide (MAPbBr3) and methylammonium lead chloride (MAPbCl3), and cesium lead bromide (CsPbBr3) can be precipitated under a formic acid vapor environment. The crystals floated within the suspended droplets undergo movement and rotation for precise alignment. The strategy allows us to deposit PSCAs with a pixel size range from 200 to 500 micrometers on diverse substrates, including indium tin oxide, glass, quartz, and poly(dimethylsiloxane), and the area can reach up to 10 centimeters by 10 centimeters. The PSCAs exhibit excellent photodetector performance with a large responsivity of 24 amperes per watt.

All-inorganic lead halide perovskite nanocrystals applied in advanced display devices

Advanced display devices are in greater demand due to their large color gamut, high color purity, ultrahigh visual resolution, and small size pixels. All-inorganic lead halide perovskite (AILHP) nanocrystals (NCs) possess inherent advantages such as narrow emission width, saturated color, and flexible integration, and have been developed as functional films, light sources, backlight components, and display panels. However, some drawbacks still restrict the practical application of advanced display devices based on AILHP NCs, including working stability, large-scale synthesis, and cost. In this review, we focus on AILHP NCs, review the recent progress in materials synthesis, stability improvement, patterning techniques, and device application. We also highlight the important role of materials systems in creating advanced display devices, followed by the challenges and opportunities in industrial processes. This review provides beneficial inspiration for the future development of AILHP NCs in colorful and white backlight, as well as high resolution full-color displays.

Perovskite single-crystal thin films: preparation, surface engineering, and application

Perovskite single-crystal thin films (SCTFs) have emerged as a significant research hotspot in the field of optoelectronic devices owing to their low defect state density, long carrier diffusion length, and high environmental stability. However, the large-area and high-throughput preparation of perovskite SCTFs is limited by significant challenges in terms of reducing surface defects and manufacturing high-performance devices. This review focuses on the advances in the development of perovskite SCTFs with a large area, controlled thickness, and high quality. First, we provide an in-depth analysis of the mechanism and key factors that affect the nucleation and crystallization process and then classify the methods of preparing perovskite SCTFs. Second, the research progress on surface engineering for perovskite SCTFs is introduced. Third, we summarize the applications of perovskite SCTFs in photovoltaics, photodetectors, light-emitting devices, artificial synapse and field-effect transistor. Finally, the development opportunities and challenges in commercializing perovskite SCTFs are discussed.

Controlled on-chip fabrication of large-scale perovskite single crystal arrays for high-performance laser and photodetector integration

Metal halide perovskites possess intriguing optoelectronic properties, however, the lack of precise control of on-chip fabrication of the large-scale perovskite single crystal arrays restricts its application in integrated devices. Here, we report a space confinement and antisolvent-assisted crystallization method for the homogeneous perovskite single crystal arrays spanning 100 square centimeter areas. This method enables precise control over the crystal arrays, including different array shapes and resolutions with less than 10%-pixel position variation, tunable pixel dimensions from 2 to 8 μm as well as the in-plane rotation of each pixel. The crystal pixel could serve as a high-quality whispering gallery mode (WGM) microcavity with a quality factor of 2915 and a threshold of 4.14 μJ cm^-2. Through directly on-chip fabrication on the patterned electrodes, a vertical structured photodetector array is demonstrated with stable photoswitching behavior and the capability to image the input patterns, indicating the potential application in the integrated systems of this method.

Organic-Inorganic Lead Halide Perovskite Single Crystal: From Synthesis to Applications

Organic-inorganic lead halide perovskite is widely used in the photoelectric field due to its excellent photoelectric characteristics. Among them, perovskite single crystals have attracted much attention due to its lower trap density and better carrier transport capacity than their corresponding polycrystalline materials. Owing to these characteristics, perovskite single crystals have been widely used in solar cells, photodetectors, light-emitting diode (LED), and so on, which have greater potential than polycrystals in a series of optoelectronic applications. However, the fabrication of single-crystal devices is limited by size, thickness, and interface problems, which makes the development of single-crystal devices inferior to polycrystalline devices, which also limits their future development. Here, several representative optoelectronic applications of perovskite single crystals are introduced, and some existing problems and challenges are discussed. Finally, we outlook the growth mechanism of single crystals and further the prospects of perovskite single crystals in the further field of microelectronics.

High-Luminance Microsized CH3NH3PbBr3 Single-Crystal-Based Light-Emitting Diodes via a Facile Liquid-Insulator Bridging Route

Micro-/nanosized organic-inorganic hybrid perovskite single crystals (SCs) with appropriate thickness and high crystallinity are promising candidates for high-performance electroluminescent (EL) devices. However, their small lateral size poses a great challenge for efficient device construction and performance optimization, causing perovskite SC-based light-emitting diodes (PSC-LEDs) to demonstrate poor EL performance. Here, we develop a facile liquid-insulator bridging (LIB) strategy to fabricate high-luminance PSC-LEDs based on single-crystalline CH₃NH₃PbBr₃ microflakes. By introducing a blade-coated poly(methyl methacrylate) (PMMA) insulating layer to effectively overcome the problems of leakage current and possible short circuits between electrodes, we achieve the reliable fabrication of PSC-LEDs. The LIB method also allows us to systematically boost the device performance through crystal growth regulation and device architecture optimization. Consequently, we realize the best CH₃NH₃PbBr₃ microflake-based PSC-LED with an ultrahigh luminance of 136100 cd m^-2 and a half-lifetime of 88.2 min at an initial luminance of ∼1100 cd m^-2, which is among the highest for organic-inorganic hybrid perovskite LEDs reported to date. Moreover, we observe the strong polarized edge emission of the microflake-based PSC-LEDs with a high degree of polarization up to 0.69. Our work offers a viable approach for the development of high-performance perovskite SC-based EL devices.

High-Brightness Perovskite Microcrystalline Light-Emitting Diodes

Here a high-brightness perovskite microcrystalline light-emitting diode (LED) is reported, in which the perovskite microcrystals were grown directly on the conductive substrate and a simple metal-insulator-semiconductor structure was adopted. A peak external quantum efficiency of 0.46% was obtained, which is high for perovskite microcrystalline LEDs. Importantly, the maximum luminance of the device reaches 8848.4 cd m^-2, indicating an ultrahigh brightness of >1.2 × 10⁶ cd m^-2 for the microcrystals (corresponding to an ultrahigh current density of 80.9 A cm^-2), because the light-emitting area of the microcrystals accounts for only ∼0.7% of the device area. In addition, we have studied the degradation of the device at a high current density by in situ microscopic observation and found that a severe Joule heating effect at large injection is the primary problem to be solved to realize electrically pumped perovskite microcrystal lasing.

In Situ Low-Temperature Growth and Superior Luminescent Property of Well-Aligned, High-Quality Cubic CsPbBr3 Micrometer-Scale Single Crystal Arrays on Transparent Conductive Substrates

Direct assembly of high-quality single-crystal perovskite microarrays on transparent conductive substrates and carrier injection layers is vital to realize high-performance optoelectronic devices. Although cubic-phase CsPbBr₃ is considered to have a higher structural and optical quality than the orthorhombic one, obtaining a well-aligned assembly directly on the aforementioned substrates is still challenging. Here we developed a solvent-assisted crystallization strategy with the assistance of surface modifiers, through which the in situ low-temperature growth of well-aligned cubic single-crystal CsPbBr₃ microarray with a preferential out-of-plane [100] orientation is achieved for the first time on commercial transparent conductive substrates. As compared with the control orthorhombic samples, the cubic CsPbBr₃ single crystals possess superior properties including a higher photoluminescence internal quantum efficiency, fewer defect states, a weaker scattering by phonons, and an appearance of lasing. The results presented here can pave the way for future design and applications of optoelectronic devices based on perovskite microarrays.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

Efficient Energy Transfer in Te4+-Doped Cs2ZrCl6 Vacancy-Ordered Perovskites and Ultrahigh Moisture Stability via A-Site Rb-Alloying Strategy

As an effective method to improve the optical properties and stability of perovskite matrix, doped halide perovskites have attracted extensive attention in the field of optoelectronic applications. Herein, a series of all inorganic lead-free Te⁴⁺-doped Cs₂ZrCl₆ vacancy-ordered perovskites were successfully synthesized with different Te-doping concentrations by a solvothermal method, and deliberate Te⁴⁺-doping results in green-yellow triplet self-trapped exciton (STE) emission with a high photoluminescence quantum yield (PLQY) of 49.0%. The efficient energy transfer was observed from singlet to triplet emission. Further, the effects of A-site Rb alloying on the optical properties and stability were investigated. We found that A-site Rb alloying and C-site cohalogenation did not change the luminescence properties of Te⁴⁺, but the addition of a small amount of Rb⁺ can improve the PL intensity and moisture stability. Our results provide physical insights into the nS² Te⁴⁺-ion-doping-induced emissive mechanism and shed light on improving the environmental stability for further applications.