Study of Complex Optical Constants of Neat Cadmium Selenide Nanoplatelets Thin Films by Spectroscopic Ellipsometry

Amplified Spontaneous Emission from Electron-Hole Quantum Droplets in Colloidal CdSe Nanoplatelets

Two-dimensional cadmium selenide nanoplatelets (NPLs) exhibit large absorption cross sections and homogeneously broadened band-edge transitions that offer utility in wide-ranging optoelectronic applications. Here, we examine the temperature-dependence of amplified spontaneous emission (ASE) in 4- and 5-monolayer thick NPLs and show that the threshold for close-packed (neat) films decreases with decreasing temperature by a factor of 2-10 relative to ambient temperature owing to extrinsic (trapping) and intrinsic (phonon-derived line width) factors. Interestingly, for pump intensities that exceed the ASE threshold, we find development of intense emission to lower energy in particular provided that the film temperature is ≤200 K. For NPLs diluted in an inert polymer, both biexcitonic ASE and low-energy emission are suppressed, suggesting that described neat-film observables rely upon high chromophore density and rapid, collective processes. Transient emission spectra reveal ultrafast red-shifting with the time of the lower energy emission. Taken together, these findings indicate a previously unreported process of amplified stimulated emission from polyexciton states that is consistent with quantum droplets and constitutes a form of exciton condensate. For studied samples, quantum droplets form provided that roughly 17 meV or less of thermal energy is available, which we hypothesize relates to polyexciton binding energy. Polyexciton ASE can produce pump-fluence-tunable red-shifted ASE even 120 meV lower in energy than biexciton ASE. Our findings convey the importance of biexciton and polyexciton populations in nanoplatelets and show that quantum droplets can exhibit light amplification at significantly lower photon energies than biexcitonic ASE.

2D II-VI Semiconductor Nanoplatelets: From Material Synthesis to Optoelectronic Integration

The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a certain level of maturity thanks to the use of nanocrystals as phosphors in commercial displays. In particular, II-VI semiconductors based on cadmium, zinc, or mercury chalcogenides can now be synthesized with tailored shapes, composition by alloying, and even as nanocrystal heterostructures. Fifteen years ago, II-VI semiconductor nanoplatelets injected new ideas into this field. Indeed, despite the emergence of other promising semiconductors such as halide perovskites or 2D transition metal dichalcogenides, colloidal II-VI semiconductor nanoplatelets remain among the narrowest room-temperature emitters that can be synthesized over a wide spectral range, and they exhibit good material stability over time. Such nanoplatelets are scientifically and technologically interesting because they exhibit optical features and production advantages at the intersection of those expected from colloidal quantum dots and epitaxial quantum wells. In organic solvents, gram-scale syntheses can produce nanoparticles with the same thicknesses and optical properties without inhomogeneous broadening. In such nanoplatelets, quantum confinement is limited to one dimension, defined at the atomic scale, which allows them to be treated as quantum wells. In this review, we discuss the synthetic developments, spectroscopic properties, and applications of such nanoplatelets. Covering growth mechanisms, we explain how a thorough understanding of nanoplatelet growth has enabled the development of nanoplatelets and heterostructured nanoplatelets with multiple emission colors, spatially localized excitations, narrow emission, and high quantum yields over a wide spectral range. Moreover, nanoplatelets, with their large lateral extension and their thin short axis and low dielectric surroundings, can support one or several electron-hole pairs with large exciton binding energies. Thus, we also discuss how the relaxation processes and lifetime of the carriers and excitons are modified in nanoplatelets compared to both spherical quantum dots and epitaxial quantum wells. Finally, we explore how nanoplatelets, with their strong and narrow emission, can be considered as ideal candidates for pure-color light emitting diodes (LEDs), strong gain media for lasers, or for use in luminescent light concentrators.

Layer-by-Layer Deposition of 2D CdSe/CdS Nanoplatelets and Polymers for Photoluminescent Composite Materials

Two-dimensional (2D) semiconductor nanoplatelets (NPLs) are strongly photoluminescent materials with interesting properties for optoelectronics. Especially their narrow photoluminescence paired with a high quantum yield is promising for light emission applications with high color purity. However, retaining these features in solid-state thin films together with an efficient encapsulation of the NPLs is a challenge, especially when trying to achieve high-quality films with a defined optical density and low surface roughness. Here, we show photoluminescent polymer-encapsulated inorganic-organic nanocomposite coatings of 2D CdSe/CdS NPLs in poly(diallyldimethylammonium chloride) (PDDA) and poly(ethylenimine) (PEI), which are prepared by sequential layer-by-layer (LbL) deposition. The electrostatic interaction between the positively charged polyelectrolytes and aqueous phase-transferred NPLs with negatively charged surface ligands is used as a driving force to achieve self-assembled nanocomposite coatings with a well-controlled layer thickness and surface roughness. Increasing the repulsive forces between the NPLs by increasing the pH value of the dispersion leads to the formation of nanocomposites with all NPLs arranging flat on the substrate, while the surface roughness of the 165 nm (50 bilayers) thick coating decreases to R_a = 14 nm. The photoluminescence properties of the nanocomposites are determined by the atomic layer thickness of the NPLs and the 11-mercaptoundecanoic acid ligand used for their phase transfer. Both the full width at half-maximum (20.5 nm) and the position (548 nm) of the nanocomposite photoluminescence are retained in comparison to the colloidal CdSe/CdS NPLs in aqueous dispersion, while the measured photoluminescence quantum yield of 5% is competitive to state-of-the-art nanomaterial coatings. Our approach yields stable polymer-encapsulated CdSe/CdS NPLs in smooth coatings with controllable film thickness, rendering the LbL deposition technique a powerful tool for the fabrication of solid-state photoluminescent nanocomposites.

Ultralow-Threshold and High-Quality Whispering-Gallery-Mode Lasing from Colloidal Core/Hybrid-Shell Quantum Wells

The realization of efficient on-chip microlasers with scalable fabrication, ultralow threshold, and stable single-frequency operation is always desired for a wide range of miniaturized photonic systems. Herein, an effective way to fabricate nanostructures- whispering-gallery-mode (WGM) lasers by drop-casting CdSe/CdS@Cd_{1- x} Zn_x S core/buffer-shell@graded-shell nanoplatelets (NPLs) dispersion onto silica microspheres is presented. Benefiting from the excellent gain properties from the interface engineered core/hybrid shell NPLs and high-quality factor WGM resonator from excellent optical field confinement, the proposed room-temperature NPLs-WGM microlasers show a record-low lasing threshold of 3.26 µJ cm^-2 under nanosecond laser pumping among all colloidal NPLs-based lasing demonstrations. The presence of sharp discrete transverse electric- and magnetic-mode spikes, the inversely proportional dependence of the free spectra range on microsphere sizes and the polarization anisotropy of laser output represent the first direct experimental evidence for NPLs-WGM lasing nature, which is verified theoretically by the computed electric-field distribution inside the microcavity. Remarkably, a stable single-mode lasing output with an ultralow lasing threshold of 3.84 µJ cm^-2 is achieved by the Vernier effect through evanescent field coupling. The results highlight the significance of interface engineering on the optimization of gain properties of heterostructured nanomaterials and shed light on developing future miniaturized tunable coherent light sources.

The complex optical index of PbS nanocrystal thin films and their use for short wave infrared sensor design

As nanocrystals (NCs) gain maturity, they become central building blocks for optoelectronics in devices such as solar cells and, more recently, infrared focal plane arrays. Now that the proof of concept of these devices has been established, their optimization requires a deeper understanding of their electronic and optical features to engineer their optoelectronic properties accurately. Though PbS NCs have been extensively investigated, the complex optical index of PbS NC thin films remains mostly unknown. Some previous works have unveiled the optical index for this type of material optimized for solar cells (excitonic peak at 940 nm), but longer wavelengths remain scarce and surface chemistry effects, which are known to be of central importance for layer doping, are simply unexplored. Here, we conduct a systematic investigation of the complex optical index of PbS NC thin films using broadband spectrally resolved ellipsometry. The obtained results are then compared with simulations combining tight-binding (TB) modeling at the NC level and the Bruggeman model to expand the results to the film scale. While TB calculation gives the NC optical indices, we extract the key NC film parameters such as the NC volume fraction and ligand indices by fitting the Bruggeman formula to ellipsometry measurements. We also bring evidence that this joint modeling method can be conducted without the need for ellipsometry data while preserving the main feature of the experimental results. Finally, the unveiled optical indices are used to model the absorption of short-wave infrared diode stacks based on PbS NCs and are relevant for state-of-the-art devices. Our electromagnetic modeling shows that the absorption within the contact is now a major limitation of the current device operated at the telecom wavelength.

Broadband Optical Phase Modulation by Colloidal CdSe Quantum Wells

Two-dimensional (2D) semiconductors are primed to realize a variety of photonic devices that rely on the transient properties of photogenerated charges, yet little is known on the change of the refractive index. The associated optical phase changes can be beneficial or undesired depending on the application, but require proper quantification. Measuring optical phase modulation of dilute 2D materials is, however, not trivial with common methods. Here, we demonstrate that 2D colloidal CdSe quantum wells, a useful model system, can modulate the phase of light across a broad spectrum using a femtosecond interferometry method. Next, we develop a toolbox to calculate the time-dependent refractive index of colloidal 2D materials from widely available transient absorption experiments using a modified effective medium algorithm. Our results show that the excitonic features of 2D materials result in broadband, ultrafast, and sizable phase modulation, even extending to the near infrared because of intraband transitions.

Surface band bending and carrier dynamics in colloidal quantum dot solids

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device. Whether band bending is intrinsic to CQD solids, i.e. is band bending present at the surface-vacuum interface, has previously been unanswered. Here we use photoemission surface photovoltage measurements to show that depletion regions are present at the surface of n and p-type CQD solids with various ligand treatments (EDT, MPA, PbI₂, MAI/PbI₂). Using laser-pump photoemission-probe time-resolved measurements, we show that the timescale of carrier dynamics in the surface of CQD solids can vary over at least 6 orders of magnitude, with the fastest dynamics on the order of microseconds in PbS-MAI/PbI₂ solids and on the order of seconds for PbS-MPA and PbS-PbI₂. By investigating the surface chemistry of the solids, we find a correlation between the carrier dynamics timescales and the presence of oxygen contaminants, which we suggest are responsible for the slower dynamics due to deep trap formation.

Surface Depletion Effects in Bromide-Ligated Colloidal Cadmium Selenide Nanoplatelets: Toward Efficient Emission at High Temperature

The colloidal semiconductor nanoplatelet (NPL) with broad ligand-semiconductor interface is an ideal system for surface science investigation, but the study regarding depletion effects in NPLs remains lacking. Herein we explore such effects in colloidal CdSe NPLs through Br ligation. Apart from improved brightness and red-shifted optical features, we also experimentally observed abnormal negative thermal quenching phenomena in bromide-ligated CdSe NPLs over 200 K under a cryogenic environment and up to 383 K under an ambient environment, which was absent in pristine NPLs. We speculate that the surface depletion effect shall account for these anomalous phenomena due to the susceptibility of the surface depletion region on photoexcited carrier concentration and surface condition. The existence of the depletion layer in NPLs is also validated quantitatively with k·p simulation. Besides offering an alternative explanation on the red-shifted optical properties of CdSe NPLs by Br-ligation, our findings pave the new route toward solution-processed NPLs-based optoelectronics with boosted thermal resistance.

Ellipsometry Study of CdSe Thin Films Deposited by PLD on ITO Coated Glass Substrates

Cadmium selenide (CdSe) thin films were deposited on indium tin oxide (ITO) coated glass substrates using pulsed laser deposition (PLD) technique under different growth temperatures. Samples were investigated for their structural, morphological, and optical properties through X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-Vis-NIR spectroscopy. AFM analysis revealed that the surface roughness of the as-grown CdSe thin films increased with the increase in deposition temperature. The optical constants and film thickness were obtained from spectroscopic ellipsometry analysis and are discussed in detail. The optical band gap of the as-grown CdSe thin films, calculated from the Tauc plot analysis, matched with the ellipsometry measurements, with a band gap of ~1.71 eV for a growth temperature range of 150 °C to 400 °C. The CdSe thin films were found to have a refractive index of ~3.0 and extinction coefficient of ~1.0, making it a suitable candidate for photovoltaics.