1
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Zhang J, Li J, Xu R, Wang Y, Wang J, Wang T, Zhao Y. A Self-Driven Ga 2O 3 Memristor Synapse for Humanoid Robot Learning. SMALL METHODS 2024:e2400989. [PMID: 39348097 DOI: 10.1002/smtd.202400989] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2024] [Revised: 09/18/2024] [Indexed: 10/01/2024]
Abstract
In recent years, the rapid development of brain-inspired neuromorphic systems has created an imperative demand for artificial photonic synapses that operate with low power consumption. In this study, a self-driven memristor synapse based on gallium oxide (Ga2O3) nanowires is proposed and demonstrated successfully. This memristor synapse is capable of emulating a range of functionalities of biological synapses when exposed to 255 nm light stimulation. These functionalities encompass peak time-dependent plasticity, pulse facilitation, and memory learning capabilities. It exhibits an ultrahigh paired-pulse facilitation index of 158, indicating exceptional learning performance. The transition from short-term memory to long-term memory can be attributed to the remarkable relearning capabilities. Furthermore, the potential applications of the memristor synapse is showcased through the successful manipulation of a humanoid intelligent robot. Upon establishing artificial intelligence (AI) systems, the control commands originating from the synaptic device can drive the humanoid robot to perform various actions. Based on the memristor synapses, the autonomous feedback system of the humanoid robot facilitates a good collaboration between robotic actions and bio-inspired light perception. Therefore, this research opens up an effective way to advance the development of neuromorphic computing technologies, AI systems, and intelligent robots that demand ultra-low energy consumption.
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Affiliation(s)
- Jianya Zhang
- Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China
- Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
| | - Jiamin Li
- Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Rui Xu
- Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Yudie Wang
- Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Jiawen Wang
- Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Tianxiang Wang
- Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Yukun Zhao
- Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
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2
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Shu L, Sha S, Zhang JH, Zhang S, Wang J, Ji X, Li S, Jiang M, Tang W, Liu Z. Narrowband Solar-Blind Photodetection of the Plasmonic (In 0.3Ga 0.7) 2O 3 Detector via the Synergetic Enhancement of Small-Sized Ag-Nanoparticle Photoabsorbance and Surface Modification. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39342636 DOI: 10.1021/acsami.4c11333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/01/2024]
Abstract
Currently, research on Ag nanoparticles (AgNPs) predominantly focuses on UV/visible photodetection and UV emission, seemingly overlooking the significance of Ag in enhancing deep ultraviolet photon detection. In this work, (In0.3Ga0.7)2O3 thin films were fabricated by plasma-enhanced chemical vapor deposition. Due to the unique photoabsorbance characteristic and better interaction with photons of small-sized AgNPs, they effectively suppress the UVB absorbance caused by energy band engineering in the (In0.3Ga0.7)2O3 thin film while enhancing photoabsorbance in UVC due to the surface plasmon effect. Therefore, under the synergistic effect of enhanced photon absorbance and hot electron transfer, the performance of the detector is significantly improved, and its responsivity (R), external quantum efficiency, and detectivity (D*) are 193 mA/W, approximately 100%, and 1014 Jones, respectively, at a bias of -6 V. The fast response time and decay time are 634.6 and 194.1 ms, respectively; the rapid decay facilitated by AgNPs is attributed to the increased indirect recombination rate. AgNPs exhibit excellent narrowband response characteristics and absorbance properties in specific wavelength bands for the InGaO photodetector. This research lays the foundation for the practical application of localized surface plasmon resonance-enhanced photon-sensing capabilities.
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Affiliation(s)
- Lincong Shu
- Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Shulin Sha
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, People's Republic of China
| | - Jia-Han Zhang
- Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China
| | - Shaohui Zhang
- Institute of Biological and Medical Engineering, Guangdong Academy of Sciences, Guangzhou 510316, People's Republic of China
| | - Jinjin Wang
- School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Xueqiang Ji
- Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Shan Li
- Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Mingming Jiang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, People's Republic of China
| | - Weihua Tang
- Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Zeng Liu
- Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China
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3
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Zheng ZY, Fan MM. Photoelectrochemical properties of self-powered corundum-structured Ga 2O 3nanorod array/fluorine-doped SnO 2photodetectors modulated by precursor concentrations. NANOTECHNOLOGY 2024; 35:325702. [PMID: 38701764 DOI: 10.1088/1361-6528/ad470e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Accepted: 05/03/2024] [Indexed: 05/05/2024]
Abstract
Herein, corundum-structured Ga2O3(α-Ga2O3) nanorod array/fluorine-doped SnO2(FTO) structures have been fabricated by hydrothermal and thermal annealing processes with different precursor concentrations from 0.01 to 0.06 M. The diameter and length of the nanorod arrays are much larger with increasing precursor concentrations due to more nucleation sites and precursor ions participating in the reaction procedures. The optical bandgap decreases from 4.75 to 4.47 eV because of the tensile stress relieving with increasing the precursor concentrations. Based on self-powered photoelectrochemical (PEC) photodetectors, the peak responsivity is improved from ∼0.33 mA W-1for 0.06 M to ∼1.51 mA W-1for 0.02 M. Schottky junctions can be formed in PEC cells. More photogenerated carriers can be produced in wider depletion region. From Mott-Schottky plots, the depletion regions become much wider with decreasing the precursor concentrations. Therefore, the enhance responsivity is owing to the wider depletion regions. Due to the reduced possibility of photogenerated holes captured by traps ascribed from fewer green and yellow luminescence defects, smaller charge transfer resistance, and shorter transportation route, the decay time becomes much faster through decreasing the precursor concentrations. Compared with the other self-poweredα-Ga2O3-nanorod-array-based PEC photodetectors, it shows the fastest response time (decay time of 0.005 s/0.026 s) simply modulated by precursor concentrations for the first time without employing complex precursors, seed layers or special device designs. Compared with other high-responsivity monoclinic Ga2O3(β-Ga2O3) self-powered photodetectors, our devices also show comparable response speed with simple control and design. This work provides the realization of fast-speed self-powered Ga2O3based solar-blind ultraviolet photodetectors by simple modulation processes and design, which is a significant guidance for their applications in warnings, imaging, computing, communication and logic circuit, in the future.
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Affiliation(s)
- Zhi-Yuan Zheng
- College of Science, Hunan University of Science and Engineering, Yongzhou 425199, People's Republic of China
| | - Ming-Ming Fan
- College of Physics, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
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4
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Feng G, Li S, Tian Y, Qi S, Guo D, Tang W. 2 in. Bulk β-Ga 2O 3 Single Crystals Grown by EFG Method with High Wafer-Scale Quality. ACS OMEGA 2024; 9:22084-22089. [PMID: 38799343 PMCID: PMC11112554 DOI: 10.1021/acsomega.4c00405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Revised: 04/06/2024] [Accepted: 04/11/2024] [Indexed: 05/29/2024]
Abstract
2 in. bulk β-Ga2O3 single crystals are successfully grown by the edge-defined film-fed growth method with a homemade furnace system. By considering the significance of wafer quality in future mass manufacture, a nine-point characterization method is developed to evaluate the full-scale quality of the processed 2 in. (100)-orientated β-Ga2O3 single-crystal wafers. Crystalline and structural characteristics were evaluated using X-ray diffraction and Raman spectroscopy, revealing decent crystalline quality with a mean full width at half-maximum value of 60.8 arcsec and homogeneous bonding structures. The statistical root-mean-square surface roughness, determined from nine scanning areas, was found to be only 0.196 nm, indicating superior surface quality. Linear optical properties and defect levels were further investigated using UV-visible spectrophotometry and photoluminescence spectroscopy. The high wafer-scale quality of the processed β-Ga2O3 wafers meets the requirements for homoepitaxial growth substrates in electronic and photonic devices with vertical configurations.
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Affiliation(s)
- Ganrong Feng
- College
of Integrated Circuit Science and Engineering & National and Local
Joint Engineering Laboratory for RF Integration and Micro-Packing
Technologies, Nanjing University of Posts
and Telecommunications, Nanjing 210023, China
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
| | - Shan Li
- College
of Integrated Circuit Science and Engineering & National and Local
Joint Engineering Laboratory for RF Integration and Micro-Packing
Technologies, Nanjing University of Posts
and Telecommunications, Nanjing 210023, China
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
| | - Yawen Tian
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
| | - Song Qi
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
| | - Daoyou Guo
- Center
for Optoelectronics Materials and Devices & Key Laboratory of
Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Weihua Tang
- College
of Integrated Circuit Science and Engineering & National and Local
Joint Engineering Laboratory for RF Integration and Micro-Packing
Technologies, Nanjing University of Posts
and Telecommunications, Nanjing 210023, China
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
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5
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Mao Q, Yang H, Li Z, Shi Y, Feng HY, Luo F, Jia Z. Enhancement of solar blind full band absorption in photodetector with Ga 2O 3 nanopore and Al nanograting. OPTICS EXPRESS 2024; 32:19508-19516. [PMID: 38859084 DOI: 10.1364/oe.523117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Accepted: 05/03/2024] [Indexed: 06/12/2024]
Abstract
In this paper, we presented a novel double-layer light-trapping structure consisting of nanopores and nanograting positioned on both the surface and bottom of a gallium oxide-based solar-blind photodetector. Utilizing the finite element method (FEM), we thoroughly investigated the light absorption enhancement capabilities of this innovative design. The simulation results show that the double-layer nanostructure effectively combines the light absorption advantages of nanopores and nanogratings. Compared with thin film devices and devices with only nanopore or nanograting structures, double-layer nanostructured devices have a higher light absorption, achieving high light absorption in the solar blind area.
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6
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Cao N, Zhang L, Li X, Meng X, Liang D, Zhu Y, Zhao F. Deep-ultraviolet n-ZnGa 2O 4/p-GaN heterojunction photodetector fabricated by pulsed laser deposition. OPTICS LETTERS 2024; 49:2309-2312. [PMID: 38691706 DOI: 10.1364/ol.519668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2024] [Accepted: 03/22/2024] [Indexed: 05/03/2024]
Abstract
Zinc gallium oxide (ZnGa2O4) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGa2O4 thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting in improved crystalline quality. The ZnGa2O4 film exhibited a bandgap of 4.93 eV, calculated through absorption spectra. A heterojunction photodetector (PD) was constructed, demonstrating a rectification effect, an on/off ratio of 12,697 at -5.87 V, a peak responsivity of 14.5 mA/W, and a peak detectivity of 1.14 × 1012 Jones (262 nm, -6 V). The PD exhibited a fast response time (39 ms) and recovery time (30 ms) under 262 nm illumination. The band diagram based on the Anderson model elucidates the photoresponse and carrier transport mechanism. This work paves the way for advancing next-generation optoelectronics.
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7
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Cao N, Zhang L, Li X, Luan R, Sun C, Yu J, Lu T, Zhu Y, Liang D, Zhao F. Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa 2O 4 heterojunction with high sensitivity and fast speed. OPTICS EXPRESS 2024; 32:11573-11582. [PMID: 38571001 DOI: 10.1364/oe.520649] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 02/26/2024] [Indexed: 04/05/2024]
Abstract
Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction photodetector based on p-CuI/n-ZnGa2O4 has been fabricated by pulsed laser deposition combined with vacuum thermal evaporation. Under 260 nm DUV light irradiation, the photodetector exhibits apparent self-powered performance with a maximum responsivity and specific detectivity of 2.75 mA/W and 1.10 × 1011 Jones at 0 V. The photodetector exhibits high repeatability and stability under 260 nm periodic illumination. The response and recovery time are 205 ms and 133 ms, respectively. This work provides an effective strategy for fabricating high-performance self-powered DUV photodetectors.
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8
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Ding S, Chen K, Xiu X, Shao P, Xie Z, Tao T, Liu B, Chen P, Chen D, Zhang R, Zheng Y. β-Ga 2O 3nanotube arrays for high-performance self-powered ultraviolet photoelectrochemical photodetectors. NANOTECHNOLOGY 2024; 35:175205. [PMID: 38271740 DOI: 10.1088/1361-6528/ad22a6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 01/25/2024] [Indexed: 01/27/2024]
Abstract
Self-powered ultraviolet (UV) photodetectors (PDs) are critical for future energy-efficient optoelectronic systems due to their low energy consumption and high sensitivity. In this paper, the vertically alignedβ-Ga2O3nanotube arrays (NTs) have been prepared on GaN/sapphire substrate by the thermal oxidation process combined with the dry etching technology, and applied in the UV photoelectrochemical photodetectors (PEC-PDs) for the first time. Based on the large specific surface area ofβ-Ga2O3NTs on GaN/sapphire substrates and the solid/liquid heterojunction, the PEC-PDs exhibit excellent self-powered characteristics under 255 nm (UVA) and 365 nm (UVC) light illumination. Under 255 nm (365 nm) light illumination, the maximum responsivity of 49.9 mA W-1(32.04 mA W-1) and a high detectivity of 1.58 × 1011Jones (1.01 × 1011Jones) were achieved for theβ-Ga2O3NTs photodetectors at 0 V bias. In addition, the device shows a fast rise/decay time of 8/4 ms (4/2 ms), which is superior to the level of the previously reported self-powered UV PEC-PDs. This high-performance PEC-PD has potential applications in next-generation low-energy UV detection systems.
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Affiliation(s)
- Shan Ding
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Kai Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Xiangqian Xiu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Pengfei Shao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Zili Xie
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Tao Tao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Peng Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
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9
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Lu C, Li M, Gao L, Zhang Q, Zhu M, Lyu X, Wang Y, Liu J, Liu P, Wang L, Tao H, Song J, Ji A, Li P, Gu L, Cao Z, Lu N. Freestanding Crystalline β-Ga 2O 3 Flexible Membrane Obtained via Lattice Epitaxy Engineering for High-Performance Optoelectronic Device. ACS NANO 2024. [PMID: 38335925 DOI: 10.1021/acsnano.3c10025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Wearable and flexible β-Ga2O3-based semiconductor devices have attracted considerable attention, due to their outstanding performance and potential application in real-time optoelectronic monitoring and sensing. However, the unavailability of high-quality crystalline and flexible β-Ga2O3 membranes limits the fabrication of relevant devices. Here, through lattice epitaxy engineering together with the freestanding method, we demonstrate the preparation of a robust bending-resistant and crystalline β-Ga2O3 (-201) membrane. Based on this, we fabricate a flexible β-Ga2O3 photodetector device that shows comparable performance in photocurrent responsivity and spectral selectivity to conventional rigid β-Ga2O3 film-based devices. Moreover, based on the transferred β-Ga2O3 membrane on a silicon wafer, the PEDOT:PSS/β-Ga2O3 p-n heterojunction device with self-powered characteristic was constructed, further demonstrating its superior heterogeneous integration ability with other functional materials. Our results not only demonstrate the feasibility of obtaining a high-quality crystalline and flexible β-Ga2O3 membrane for an integrated device but also provide a pathway to realize flexible optical and electronic applications for other semiconducting materials.
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Affiliation(s)
- Chao Lu
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mengcheng Li
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mingtong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiangyu Lyu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Yuqian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jin Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Pengyu Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lu Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Huayu Tao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Jiayi Song
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Ailing Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Peigang Li
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Lin Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zexian Cao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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10
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Chen T, Zhang X, Zhang L, Zeng C, Li S, Yang A, Hu Y, Li B, Jiang M, Huang Z, Li Y, Guo G, Fan Y, Shi W, Cai Y, Zeng Z, Zhang B. High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown β-Ga 2O 3 Single-Crystal Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6068-6077. [PMID: 38258520 DOI: 10.1021/acsami.3c15561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Deep-level defects in β-Ga2O3 that worsen the response speed and dark current (Id) of photodetectors (PDs) have been a long-standing issue for its application. Herein, an in situ grown single-crystal Ga2O3 nanoparticle seed layer (NPSL) was used to shorten the response time and reduce the Id of metal-semiconductor-metal (MSM) PDs. With the NPSL, the Id was reduced by 4 magnitudes from 0.389 μA to 81.03 pA, and the decay time (τd1/τd2) decreased from 258/1690 to 62/142 μs at -5 V. In addition, the PDs with the NPSL also exhibit a high responsivity (43.5 A W-1), high specific detectivity (2.81 × 1014 Jones), and large linear dynamic range (61 dB) under 254 nm illumination. The mechanism behind the performance improvement can be attributed to the suppression of the deep-level defects (i.e., self-trapped holes) and increase of the Schottky barrier. The barrier height extracted is increased by 0.18 eV compared with the case without the NPSL. Our work contributes to understanding the relationship between defects and the performance of PDs based on heteroepitaxial β-Ga2O3 thin films and provides an important reference for the development of high-speed and ultrasensitive deep ultraviolet PDs.
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Affiliation(s)
- Tiwei Chen
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Xiaodong Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Li Zhang
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Chunhong Zeng
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Shaojuan Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, China
| | - An Yang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Yu Hu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Botong Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Ming Jiang
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Zijing Huang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Yifei Li
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Gaofu Guo
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Yaming Fan
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China
| | - Wenhua Shi
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Yong Cai
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Zhongming Zeng
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China
| | - Baoshun Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
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11
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Zhang Y, Liu S, Xu R, Ruan S, Liu C, Ma Y, Li X, Chen Y, Zhou J. Solar-blind ultraviolet photodetector based on Nb 2C/ β-Ga 2O 3heterojunction. NANOTECHNOLOGY 2024; 35:165502. [PMID: 38150735 DOI: 10.1088/1361-6528/ad18e7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 12/27/2023] [Indexed: 12/29/2023]
Abstract
β-Ga2O3has been widely investigated for its stability and thermochemical properties. However, the preparation ofβ-Ga2O3thin films requires complex growth techniques and high growth temperatures, and this has hindered the application ofβ-Ga2O3thin films. In this study,β-Ga2O3thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based onβ-Ga2O3with a photocurrent of 2.54 × 10-6A and a dark current of 1.19 × 10-8A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb2C and Ga2O3to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W-1) and good stability. Thus, the Nb2C/β-Ga2O3heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.
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Affiliation(s)
- Yongfeng Zhang
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Shuainan Liu
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Ruiliang Xu
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Shengping Ruan
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Caixia Liu
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Yan Ma
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Xin Li
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Yu Chen
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Jingran Zhou
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
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12
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Xi Z, Liu Z, Yang L, Tang K, Li L, Shen G, Zhang M, Li S, Guo Y, Tang W. Comprehensive Study on Ultra-Wide Band Gap La 2O 3/ε-Ga 2O 3 p-n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:40744-40752. [PMID: 37592828 DOI: 10.1021/acsami.3c07597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/19/2023]
Abstract
Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection without interference from other signals and response quickly. Herein, we fabricated a solar-blind UV photodetector based on a La2O3/ε-Ga2O3 p-n heterojunction with a typical type-II band alignment. Benefiting from the photovoltaic effect formed by the space charge region across the junction interface, the photodetector exhibited a self-powered photocurrent of 1.4 nA at zero bias. Besides, this photodetector demonstrated excellent photo-to-dark current ratio of 2.68 × 104 under 254 nm UV light illumination and at a bias of 5 V, and a high specific detectivity of 2.31 × 1011 Jones and large responsivity of 1.67 mA/W were achieved. Importantly, the La2O3/ε-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on the performances described above, this novel La2O3/ε-Ga2O3 heterojunction is expected to be a candidate for future energy-efficient fire detection.
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Affiliation(s)
- Zhaoying Xi
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zeng Liu
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Lili Yang
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Kai Tang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
| | - Lei Li
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Gaohui Shen
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Maolin Zhang
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Shan Li
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yufeng Guo
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Weihua Tang
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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13
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Yoon Y, Park S, Park T, Kim H, Kim K, Hong J. Enhanced Responsivity and Optoelectronic Properties of Self-Powered Solar-Blind Ag 2O/β-Ga 2O 3 Heterojunction-Based Photodetector with Ag:AZO Co-Sputtered Electrode. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1287. [PMID: 37049380 PMCID: PMC10096629 DOI: 10.3390/nano13071287] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 04/03/2023] [Accepted: 04/03/2023] [Indexed: 06/19/2023]
Abstract
A Ag:AZO electrode was used as an electrode for a self-powered solar-blind ultraviolet photodetector based on a Ag2O/β-Ga2O3 heterojunction. The Ag:AZO electrode was fabricated by co-sputtering Ag and AZO heterogeneous targets using the structural characteristics of a Facing Targets Sputtering (FTS) system with two-facing targets, and the electrical, crystallographic, structural, and optical properties of the fabricated thin film were evaluated. A photodetector was fabricated and evaluated based on the research results that the surface roughness of the electrode can reduce the light energy loss by reducing the scattering and reflectance of incident light energy and improving the trapping phenomenon between interfaces. The thickness of the electrodes was varied from 20 nm to 50 nm depending on the sputtering time. The optoelectronic properties were measured under 254 nm UV-C light, the on/off ratio of the 20 nm Ag:AZO electrode with the lowest surface roughness was 2.01 × 108, and the responsivity and detectivity were 56 mA/W and 6.99 × 1011 Jones, respectively. The Ag2O/β-Ga2O3-based solar-blind photodetector with a newly fabricated top electrode exhibited improved response with self-powered characteristics.
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14
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Sheoran H, Fang S, Liang F, Huang Z, Kaushik S, Manikanthababu N, Zhao X, Sun H, Singh R, Long S. High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga 2O 3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52096-52107. [PMID: 36346904 DOI: 10.1021/acsami.2c08511] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to-dark-current ratio (PDCR) of the order of 105 at zero bias and >105 at higher biases of 5 and 10 V, which remains almost constant up to 125 °C. The high responsivity of 6.62 A/W is obtained at 10 V at room temperature (RT) under the weak illumination of 42.86 μW/cm2 of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 × 10-14 and 1.03 × 10-16 W/Hz1/2 and ultrahigh detectivity of 5.51 × 1011 and 3.10 × 1014 Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV-visible (260:500 nm) rejection ratios of the order of 103 at zero bias and 105 at 5 V are obtained. These results demonstrate the potential of Ga2O3-based DUV PDs for solar-blind detection applications that require high-temperature robustness.
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Affiliation(s)
- Hardhyan Sheoran
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Shi Fang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Fangzhou Liang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Zhe Huang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Shuchi Kaushik
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Nethala Manikanthababu
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Xiaolong Zhao
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi110016, India
| | - Shibing Long
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
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15
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Qin L, Yuan S, Chen Z, Bai X, Xu J, Zhao L, Zhou W, Wang Q, Chang J, Sun J. Solution-processed transparent p-type orthorhombic K doped SnO films and their application in a phototransistor. NANOSCALE 2022; 14:13763-13770. [PMID: 36102639 DOI: 10.1039/d2nr03785h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The exploitation of p-type oxide semiconductors with excellent optoelectrical properties as well as a simple preparation process is still challenging owing to the difficulty in producing hole carriers which results from strong hole localization in p-type oxide semiconductors. In this work, we succeeded in using ethylene glycol as a reductant to prepare orthorhombic structure SnO films using a sol-gel method and through K doping the optical and electrical properties of the films were improved. When the orthorhombic K doped SnO (K-SnO) films were applied in a phototransistor, it presented ultra-broadband photosensing from the ultraviolet to infrared region (300-1000 nm), demonstrating a photoresponsivity of 349 A W-1 and a detectivity of 5.45 × 1012 Jones at 900 nm under a light intensity of 0.00471 mW cm-2. In particular, infrared photosensing was for the first time reported in the SnO based phototransistors. This work not only provides a simple method to fabricate high-performance and low-cost p-type K-SnO films and phototransistors, but may also suggest a new way to improve the p-type characteristics of other oxide semiconductors and devices.
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Affiliation(s)
- Li Qin
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Shuoguo Yuan
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Zequn Chen
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Xue Bai
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Jianmei Xu
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Ling Zhao
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Wei Zhou
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Qing Wang
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
| | - Jingjing Chang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
| | - Jian Sun
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China.
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16
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Pei Y, Liang L, Wang X, Wang Z, Zhang H, Ren J, Cao H. Low-Temperature-Crystallized Ga 2O 3 Thin Films and Their TFT-Type Solar-Blind Photodetectors. J Phys Chem Lett 2022; 13:7243-7251. [PMID: 35913457 DOI: 10.1021/acs.jpclett.2c01852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Crystalline Ga2O3 (c-Ga2O3) is a promising candidate for next-generation solar-blind photodetectors (SBPDs) but is suffering from high processing temperatures. Herein, seed-induced engineering is proposed via adopting Zn as an induced metal for crystallizing Ga2O3, lowering the processing temperature by 200 °C. After annealing, the Zn/Ga2O3 consists of an inner Ga2O3 layer of a monoclinic crystalline phase, top ZnO crystals coming from Zn oxidation, and a thin corundum Ga2O3 layer between them, which implies a "seed-induced" crystallization mechanism besides the nonequilibrium chaotic state caused by the traditional electron transfer one. As a result, the tailored c-Ga2O3 thin-film transistor-type SBPD with enhanced packing density and finite oxygen deficiency demonstrates a satisfactory responsivity of 8.6 A/W and also an ultrahigh UVC/visible rejection ratio (R254/R450) of 2 × 105. The seed-induced engineering forecasts its potential application in crystalline Ga2O3 SBPDs under a relatively low processing temperature.
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Affiliation(s)
- Yu Pei
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lingyan Liang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Xiaolong Wang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhenhua Wang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Hengbo Zhang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Junyan Ren
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Hongtao Cao
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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17
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Zhou Z, Zhao F, Wang C, Li X, He S, Tian D, Zhang D, Zhang L. Self-powered p-CuI/n-GaN heterojunction UV photodetector based on thermal evaporated high quality CuI thin film. OPTICS EXPRESS 2022; 30:29749-29759. [PMID: 36299142 DOI: 10.1364/oe.464563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Accepted: 07/13/2022] [Indexed: 06/16/2023]
Abstract
With vacuum thermal evaporation, the CuI film was deposited on quartz and n-GaN substrates, and the morphology, crystalline structure and optical properties of the CuI films were investigated. According to the XRD results, the CuI film preferentially grew along [111] crystal orientation on the GaN epilayer. With Au and Ni/Au ohmic contact electrodes fabricated on CuI and n-GaN, a prototype p-CuI/n-GaN heterojunction UV photodetector strong UV spectral selectivity was created. At 0 V and 360 nm front illumination (0.32 mW/cm2), the heterojunction photodetector displayed outstanding self-powered detection performance with the responsivity (R), specific detectivity (D*), and on/off ratio up to 75.5 mA/W, 1.27×1012 Jones, and ∼2320, respectively. Meanwhile, the p-CuI/n-GaN heterojunction photodetector had excellent atmosphere stability.
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18
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Park S, Park T, Park JH, Min JY, Jung Y, Kyoung S, Kang TY, Kim KH, Rim YS, Hong J. Ag 2O/β-Ga 2O 3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25648-25658. [PMID: 35611950 DOI: 10.1021/acsami.2c03193] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/Ag2O layer is continuously deposited on a β-Ga2O3 epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p-n junction photodetector was constructed through the Ag2O/β-Ga2O3 heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time. The effect of top electrode thickness on the photoresponse characteristics of photodetectors was studied. Because thin Ag films have low surface roughness, indicating low optical loss and good interfacial conditions, photodetectors using a thin Ag film as the top electrode exhibit high photoresponsivity. However, Ag films that were thinner than the threshold thickness, which is the minimum thickness required to form a continuous, homogeneous surface film, exhibited rather low performance owing to the high reflection and scattering caused by the inhomogeneous surface morphology. The as-fabricated photodetector with a 20 nm Ag film presents a high on/off ratio of 3.43 × 108, responsivity and detectivity of 25.65 mA/W and 6.10 × 1011 Jones, respectively, and comparable rise and decay times of 108 and 80 ms, respectively. Additionally, even after three months of storage in an ambient environment, the photoresponse of the photodetector was maintained, indicating good stability in air. These results suggest that Ag2O/β-Ga2O3 heterojunction-based photodetectors with thin Ag films can be used in various applications requiring deep-ultraviolet detection without an external power supply.
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Affiliation(s)
- Sangbin Park
- Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Republic of Korea
| | - Taejun Park
- Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Republic of Korea
| | - Joon Hui Park
- Intelligent Mechatronics Engineering, College of Software Convergence, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Ji Young Min
- Intelligent Mechatronics Engineering, College of Software Convergence, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Yusup Jung
- PowerCubeSemi, Inc., 686, Cheonggyesan-ro, Sujeong-gu, Seongnam-si, Gyeonggi-do 13105, Republic of Korea
| | - Sinsu Kyoung
- PowerCubeSemi, Inc., 686, Cheonggyesan-ro, Sujeong-gu, Seongnam-si, Gyeonggi-do 13105, Republic of Korea
| | - Tai-Young Kang
- PowerCubeSemi, Inc., 686, Cheonggyesan-ro, Sujeong-gu, Seongnam-si, Gyeonggi-do 13105, Republic of Korea
| | - Kyung Hwan Kim
- Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Republic of Korea
| | - You Seung Rim
- Intelligent Mechatronics Engineering, College of Software Convergence, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Jeongsoo Hong
- Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Republic of Korea
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19
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Zheng Z, Wang W, Wu F, Wang Z, Shan M, Zhao Y, Liu W, Jian P, Dai J, Lu H, Chen C. Flexible assembly of the PEDOT: PSS/ exfoliated β-Ga 2O 3 microwire hybrid heterojunction for high-performance self-powered solar-blind photodetector. OPTICS EXPRESS 2022; 30:21822-21832. [PMID: 36224894 DOI: 10.1364/oe.461342] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Accepted: 05/22/2022] [Indexed: 06/16/2023]
Abstract
Motivated by the goals of fabricating highly reliable, high performance, and cost-efficient self-powered photodetector (PD) for numerous scientific research and civil fields, an organic-inorganic hybrid solar-blind ultraviolet (UV) PD based on PEDOT: PSS/exfoliated β-Ga2O3 microwire heterojunction was fabricated by a flexible and cost-effective assembly method. Benefiting from the heterojunction constructed by the highly crystalline β-Ga2O3 and the excellent hole transport layer PEDOT: PSS, the device presents a high responsivity of 39.8 mA/W at 250 nm and a sharp cut-off edge at 280 nm without any power supply. Additionally, the ultra-high normalized photo-to-dark current ratio (> 104 mW-1cm2) under reverse bias and the superior detectivity of 2.4×1012 Jones at zero bias demonstrate the excellent detection capabilities. Furthermore, the hybrid PD exhibits a rapid rise time (several milliseconds) and high rejection ratio (R250/R365: 5.8 × 103), which further highlights its good spectral selectivity for solar-blind UV. The prominent performance is mainly ascribed to the efficient separation of the photogenerated carriers by the large built-in electric field of the advanced heterojunction. This flexible assembly strategy for solar-blind UV PD combines the advantages of high efficiency, low cost and high performance, providing more potential for PD investigation and application in the future.
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20
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Lin H, Jiang A, Xing S, Li L, Cheng W, Li J, Miao W, Zhou X, Tian L. Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures. NANOMATERIALS 2022; 12:nano12060910. [PMID: 35335723 PMCID: PMC8953703 DOI: 10.3390/nano12060910] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Revised: 03/02/2022] [Accepted: 03/03/2022] [Indexed: 02/04/2023]
Abstract
Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.
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Affiliation(s)
- Haowei Lin
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
- Henan International Joint Laboratory of Nano-Photoelectric Magnetic Materials, Henan University of Technology, Zhengzhou 450001, China
- Correspondence:
| | - Ao Jiang
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Shibo Xing
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Lun Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Wenxi Cheng
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Jinling Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Wei Miao
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Xuefei Zhou
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Li Tian
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
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21
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Zhang D, Lin Z, Zheng W, Huang F. Pt/ZnGa 2O 4/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5653-5660. [PMID: 35072470 DOI: 10.1021/acsami.1c23453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this work, a strategy of constructing a back-to-back heterojunction is proposed to fabricate Si-based photovoltaic photodetectors with high deep ultraviolet (DUV) spectral selectivity. By combining Pt with a thickness of 4 nm with a ZnGa2O4/Si heterojunction, a back-to-back heterojunction is successfully constructed. Based on that, a Pt/ZnGa2O4/p-Si DUV photovoltaic detector with a low dark current density (∼9.6 × 10-5 μA/cm2), a large photo-to-dark current ratio (PDCR, >105), and a fast response speed (decay time <50 ms) is fabricated. At 0 V bias, this device displays a photoresponsivity of about 1.36 mA/W and a high deep ultraviolet-visible (DUV-vis) rejection ratio (R258 nm/R420 nm) of ∼1.1 × 105, which are 1-2 orders of magnitude higher than those of most photovoltaic DUV detectors reported currently. Even at a working temperature of 470 K, the detectivity of this device can still reach ∼1.23 × 1010 Jones. In addition, compared with Au/ZnGa2O4/Si devices, the dark current and PDCR of this Pt/ZnGa2O4/Si device decrease by 2 orders of magnitude and increase by 1 order of magnitude, respectively. The enhanced performance of this ZnGa2O4/Si device can be attributed to the higher Schottky barrier established between Pt with a higher work function and ZnGa2O4. This strategy of adopting a back-to-back heterojunction device structure to hinder the visible light photoresponse of Si-based photodetectors and thus to reduce the dark current of a device can provide a reference for preparing photovoltaic DUV detectors with excellent performance.
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Affiliation(s)
- Dan Zhang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Zhuogeng Lin
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Wei Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Feng Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
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22
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Yan Z, Li S, Yue J, Liu Z, Ji X, Yang Y, Li P, Wu Z, Guo Y, Tang W. A Spiro-MeOTAD/Ga 2O 3/Si p-i-n Junction Featuring Enhanced Self-Powered Solar-Blind Sensing via Balancing Absorption of Photons and Separation of Photogenerated Carriers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:57619-57628. [PMID: 34806380 DOI: 10.1021/acsami.1c18229] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Solar blind ultraviolet (SBUV) self-powered photodetectors (PDs) have a great number of applications in civil and military exploration. Ga2O3 is a prospective candidate for SBUV detection owing to its reasonable bandgap corresponding to the SBUV waveband. Nevertheless, the previously reported Ga2O3 photovoltaic devices had low photoresponse performance and were still far from the demands of practical application. Herein, we propose an idea of using spiro-MeOTAD (spiro) as the SBUV transparent conductive layer to construct p-i-n PDs (p-spiro/Ga2O3/n-Si). With the aid of double built-in electric fields, the designed p-i-n PDs could operate without any external power source. Furtherly, the influence of spiro thickness on improving the photoelectric performance of devices is investigated in detail and the optimum device is achieved, translating to a peak responsivity of 192 mA/W upon a weak 254 nm light illumination of 2 μW/cm2 at zero bias. In addition, the I-t curve of our PD shows binary response characteristics and a four-stage current response behavior under a small forward bias, and also, its underlying working mechanism is analyzed. In sum, this newly developed device presents great potential for booming the high energy-efficient optoelectronic devices in the short run.
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Affiliation(s)
- Zuyong Yan
- Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Shan Li
- Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Jianying Yue
- Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Zeng Liu
- College of Electronic and Optical Engineering & College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xueqiang Ji
- Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Yongtao Yang
- Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Peigang Li
- Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Zhenping Wu
- Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Yufeng Guo
- College of Electronic and Optical Engineering & College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Weihua Tang
- Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- College of Electronic and Optical Engineering & College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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23
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Venkata Krishna Rao R, Ranade AK, Desai P, Kalita G, Suzuki H, Hayashi Y. Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions. SN APPLIED SCIENCES 2021. [DOI: 10.1007/s42452-021-04774-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022] Open
Abstract
Abstract
Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states.
Article Highlights
We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction.
The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K.
We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization.
Graphic abstract
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