Enhanced Responsivity and Optoelectronic Properties of Self-Powered Solar-Blind Ag2O/β-Ga2O3 Heterojunction-Based Photodetector with Ag:AZO Co-Sputtered Electrode

A Ag:AZO electrode was used as an electrode for a self-powered solar-blind ultraviolet photodetector based on a Ag₂O/β-Ga₂O₃ heterojunction. The Ag:AZO electrode was fabricated by co-sputtering Ag and AZO heterogeneous targets using the structural characteristics of a Facing Targets Sputtering (FTS) system with two-facing targets, and the electrical, crystallographic, structural, and optical properties of the fabricated thin film were evaluated. A photodetector was fabricated and evaluated based on the research results that the surface roughness of the electrode can reduce the light energy loss by reducing the scattering and reflectance of incident light energy and improving the trapping phenomenon between interfaces. The thickness of the electrodes was varied from 20 nm to 50 nm depending on the sputtering time. The optoelectronic properties were measured under 254 nm UV-C light, the on/off ratio of the 20 nm Ag:AZO electrode with the lowest surface roughness was 2.01 × 10⁸, and the responsivity and detectivity were 56 mA/W and 6.99 × 10¹¹ Jones, respectively. The Ag₂O/β-Ga₂O₃-based solar-blind photodetector with a newly fabricated top electrode exhibited improved response with self-powered characteristics.

Extremely Ultranarrow Linewidth Based on Low-Symmetry Al Nanoellipse Metasurface

Plasmonic nanostructures with ultranarrow linewidths are of great significance in numerous applications, such as optical sensing, surface-enhanced Raman scattering (SERS), and imaging. The traditional plasmonic nanostructures generally consist of gold and silver materials, which are unavailable in the ultraviolet (UV) or deep-ultraviolet (DUV) regions. However, electronic absorption bands of many important biomolecules are mostly located in the UV or DUV regions. Therefore, researchers are eager to realize ultranarrow linewidth of plasmonic nanostructures in these regions. Aluminum (Al) plasmonic nanostructures are potential candidates for realizing the ultranarrow linewidth from the DUV to the near-infrared (NIR) regions. Nevertheless, realizing ultranarrow linewidth below 5 nm remains a challenge in the UV or DUV regions for Al plasmonic nanostructures. In this study, we theoretically designed low-symmetry an Al nanoellipse metasurface on the Al substrate. An ultranarrow linewidth of 1.9 nm has been successfully obtained in the near-UV region (400 nm). Additionally, the ultranarrow linewidth has been successfully modulated to the DUV region by adjusting structural parameters. This work aims to provide a theoretical basis and prediction for the applications, such as UV sensing and UV-SERS.

Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene

To fabricate graphene-based high-frequency electronic and optoelectronic devices, there is a high demand for scalable low-contaminated graphene with high mobility. Graphene synthesized via chemical vapor deposition (CVD) on copper foil appears promising for this purpose, but residues from the polymethyl methacrylate (PMMA) layer, used for the wet transfer of CVD graphene, drastically affect the electrical properties of graphene. Here, we demonstrate a scalable and green PMMA removal technique that yields high-mobility graphene on the most common technologically relevant silicon (Si) substrate. As the first step, the polarity of the PMMA was modified under deep-UV irradiation at λ = 254 nm, due to the formation of ketones and aldehydes of higher polarity, which simplifies hydrogen bonding in the step of its dissolution. Modification of PMMA polarity was confirmed by UV and FTIR spectrometry and contact angle measurements. Consecutive dissolution of DUV-exposed PMMA in an environmentally friendly, binary, high-polarity mixture of isopropyl alcohol/water (more commonly alcohol/water) resulted in the rapid and complete removal of DUV-exposed polymers without the degradation of graphene properties, as low-energy exposure does not form free radicals, and thus the released graphene remained intact. The high quality of graphene after PMMA removal was confirmed by SEM, AFM, Raman spectrometry, and by contact and non-contact electrical conductivity measurements. The removal of PMMA from graphene was also performed via other common methods for comparison. The charge carrier mobility in graphene films was found to be up to 6900 cm²/(V·s), demonstrating a high potential of the proposed PMMA removal method in the scalable fabrication of high-performance electronic devices based on CVD graphene.

Hafnium Oxide Nanostructured Thin Films: Electrophoretic Deposition Process and DUV Photolithography Patterning

In the frame of the nanoarchitectonic concept, the objective of this study was to develop simple and easy methods to ensure the preparation of polymorphic HfO2 thin film materials (<200 nm) having the best balance of patterning potential, reproducibility and stability to be used in optical, sensing or electronic fields. The nanostructured HfO2 thin films with micropatterns or continuous morphologies were synthesized by two different methods, i.e., the micropatterning of sol-gel solutions by deep ultraviolet (DUV) photolithography or the electrophoretic deposition (EPD) of HfO2 nanoparticles (HfO2-NPs). Amorphous and monoclinic HfO2 micropatterned nanostructured thin films (HfO2-DUV) were prepared by using a sol-gel solution precursor (HfO2-SG) and spin-coating process following by DUV photolithography, whereas continuous and dense monoclinic HfO2 nanostructured thin films (HfO2-EPD) were prepared by the direct EPD of HfO2-NPs. The HfO2-NPs were prepared by a hydrothermal route and studied through the changing aging temperature, pH and reaction time parameters to produce nanocrystalline particles. Subsequently, based on the colloidal stability study, suspensions of the monoclinic HfO2-NPs with morphologies near spherical, spindle- and rice-like shapes were used to prepare HfO2-EPD thin films on conductive indium-tin oxide-coated glass substrates. Morphology, composition and crystallinity of the HfO2-NPs and thin films were investigated by powder and grazing incidence X-ray diffraction, scanning electron microscopy, transmission electron microscopy and UV-visible spectrophotometry. The EPD and DUV photolithography performances were explored and, in this study, it was clearly demonstrated that these two complementary methods are suitable, simple and effective processes to prepare controllable and tunable HfO2 nanostructures as with homogeneous, dense or micropatterned structures.

Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced during the epitaxial growth of AlGaN MQWs, due to the grain boundary formation, coalescence and growth. The presence of this tensile strain results in the microscale inhomogeneous compositional pulling and Ga segregation, which is further confirmed by the lower formation enthalpy of Ga atom than Al atom on AlGaN slab using first principle simulations. The strain-induced microscale compositional pulling leads to an asymmetrical feature of emission spectra and local variation in emission energy of AlGaN MQWs. Because of a stronger three-dimensional carrier localization, the area of Ga segregation shows a higher emission efficiency compared with the intrinsic area of MQWs, which is benefit for fabricating efficient AlGaN-based deep-ultraviolet light-emitting diode.

Calibration of the SHERLOC Deep Ultraviolet Fluorescence-Raman Spectrometer on the Perseverance Rover

We describe the wavelength calibration of the spectrometer for the scanning of habitable environments with Raman and luminescence for organics and chemicals (SHERLOC) instrument onboard NASA's Perseverance Rover. SHERLOC utilizes deep ultraviolet Raman and fluorescence (DUV R/F) spectroscopy to enable analysis of samples from the Martian surface. SHERLOC employs a 248.6 nm deep ultraviolet laser to generate Raman-scattered photons and native fluorescence emission photons from near-surface material to detect and classify chemical and mineralogical compositions. The collected photons are focused on a charge-coupled device and the data are returned to Earth for analysis. The compact DUV R/F spectrometer has a spectral range from 249.9 nm to 353.6 nm (∼200 cm^-1 to 12 000 cm^-1) (with a spectral resolution of 0.296 nm (∼40 cm^-1)). The compact spectrometer uses a custom design to project a high-resolution Raman spectrum and a low-resolution fluorescence spectrum on a single charge-coupled device. The natural spectral separation enabled by deep ultraviolet excitation enables wavelength separation of the Raman/fluorescence spectra. The SHERLOC spectrometer was designed to optimize the resolution of the Raman spectral region and the wavelength range of the fluorescence region. The resulting illumination on the charge-coupled device is curved, requiring a segmented, nonlinear wavelength calibration in order to understand the mineralogy and chemistry of Martian materials.

M(NH2 SO3 )2 (M=Sr, Ba): Two Deep-Ultraviolet Transparent Sulfamates Exhibiting Strong Second Harmonic Generation Responses and Moderate Birefringence

Over the last few decades, the development of each new nonlinear optical (NLO)-active functional unit has led to the discoveries of a series of excellent NLO materials. In the present work, based on first-principles studies, we identified a novel deep-UV (DUV) NLO-active functional unit, a non-π-conjugated group viz. (NH₂ SO₃ )^- . By combining alkaline-earth metals with (NH₂ SO₃ )^- group, two DUV transparent NLO sulfamates, M(NH₂ SO₃ )₂ (M=Sr, Ba) with superior optical properties including strong SHG responses (1.2 and 2.7 × KH₂ PO₄ (KDP)), short UV cut-off edge (<190 nm) and moderate birefringence (0.056@589.3 nm for Sr(NH₂ SO₃ )₂ ) were successfully synthesized. Our work has provided not only two promising DUV transparent NLO crystals, but also an innovative non-π-conjugated unit for developing more DUV transparent NLO materials.

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance

The development of low resistance contacts to 2D transition-metal dichalcogenides (TMDs) is still a big challenge for the future generation field effect transistors (FETs) and optoelectronic devices. Here, we report a chemical doping technique to achieve low contact resistance by keeping the intrinsic properties of few layers WS2. The transfer length method has been used to investigate the effect of chemical doping on contact resistance. After doping, the contact resistance (Rc) of multilayer (ML) WS2 has been reduced to 0.9 kΩ·μm. The significant reduction of the Rc is mainly due to the high electron doping density, thus a reduction in Schottky barrier height, which limits the device performance. The threshold voltage of ML-WS2 FETs confirms a negative shift upon the chemical doping, as further confirmed from the positions of E(1)2g and A1g peaks in Raman spectra. The n-doped samples possess a high drain current of 65 μA/μm, with an on/off ratio of 1.05 × 10(6) and a field effect mobility of 34.7 cm(2)/(V·s) at room temperature. Furthermore, the photoelectric properties of doped WS2 flakes were also measured under deep ultraviolet light. The potential of using LiF doping in contact engineering of TMDs opens new ways to improve the device performance.