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Shuai X, Sidhik S, Xu M, Zhang X, De Siena M, Pedesseau L, Zhang H, Gao G, Puthirath AB, Li W, Agrawal A, Xu J, Hou J, Persaud JH, Daum J, Mishra A, Wang Y, Vajtai R, Katan C, Kanatzidis MG, Even J, Ajayan PM, Mohite AD. Vapor Growth of All-Inorganic 2D Ruddlesden-Popper Lead- and Tin-Based Perovskites. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39175462 DOI: 10.1021/acsami.4c05329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2024]
Abstract
The 2D Ruddlesden-Popper (RP) perovskites Cs2PbI2Cl2 (Pb-based, n = 1) and Cs2SnI2Cl2 (Sn-based, n = 1) stand out as unique and rare instances of entirely inorganic constituents within the more expansive category of organic/inorganic 2D perovskites. These materials have recently garnered significant attention for their strong UV-light responsiveness, exceptional thermal stability, and theoretically predicted ultrahigh carrier mobility. In this study, we synthesized Pb and Sn-based n = 1 2D RP perovskite films covering millimeter-scale areas for the first time, utilizing a one-step chemical vapor deposition (CVD) method under atmospheric conditions. These films feature perovskite layers oriented horizontally relative to the substrate. Multilayered Cs3Pb2I3Cl4 (Pb-based, n = 2) and Cs3Sn2I3Cl4 (Sn-based, n = 2) films were also obtained for the first time, and their crystallographic structures were refined by combining X-ray diffraction (XRD) and density functional theory (DFT) calculations. DFT calculations and experimental optical spectroscopy support band-gap energy shifts related to the perovskite layer thickness. We demonstrate bias-free photodetectors using the Sn-based, n = 1 perovskite with reproducible photocurrent and a fast 84 ms response time. The present work not only demonstrates the growth of high-quality all-inorganic multilayered 2D perovskites via the CVD method but also suggests their potential as promising candidates for future optoelectronic applications.
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Affiliation(s)
- Xinting Shuai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Siraj Sidhik
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Mingrui Xu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Michael De Siena
- Department of Chemistry and Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Laurent Pedesseau
- Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR6082, Rennes F-35000, France
| | - Hao Zhang
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institution, Houston, Texas 77005, United States
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Wenbin Li
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
- Applied Physics Graduate Program, Smalley-Curl Institution, Houston, Texas 77005, United States
| | - Ayush Agrawal
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Jianan Xu
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jin Hou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Jessica H Persaud
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Jeremy Daum
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anamika Mishra
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
| | - Yafei Wang
- School of Mechanical and Electric Engineering, Guangzhou University, Guangzhou, Guangdong 510006, China
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Claudine Katan
- Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR -UMR6226, Rennes F-35000, France
| | - Mercouri G Kanatzidis
- Department of Chemistry and Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Jacky Even
- Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR6082, Rennes F-35000, France
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Aditya D Mohite
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States
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Goldberg I, Elkhouly K, Annavarapu N, Hamdad S, Gonzalez MC, Genoe J, Gehlhaar R, Heremans P. Toward Thin-Film Laser Diodes with Metal Halide Perovskites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314193. [PMID: 39177182 DOI: 10.1002/adma.202314193] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 06/17/2024] [Indexed: 08/24/2024]
Abstract
Metal halide perovskite semiconductors hold a strong promise for enabling thin-film laser diodes. Perovskites distinguish themselves from other non-epitaxial media primarily through their ability to maintain performance at high current densities, which is a critical requirement for achieving injection lasing. Coming in a wide range of varieties, numerous perovskites delivered low-threshold optical amplified spontaneous emission and optically pumped lasing when combined with a suitable optical cavity. A progression toward electrically pumped lasing requires the development of efficient light-emitting structures with reduced optical losses and high radiative efficiency at lasing-level current densities. This involves a set of important trade-offs in terms of material choice, stack and waveguide design, as well as resonator integration. In this Perspective, the key milestones are highlighted that have been achieved in the study of passive optical waveguides and light-emitting diodes, and these learnings are translated toward more complex laser diode architectures. Finally, a novel resonator integration route is proposed that is capable of relaxing optical and electrical design constraints.
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Affiliation(s)
- Iakov Goldberg
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Karim Elkhouly
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Nirav Annavarapu
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Sarah Hamdad
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Maider Calderon Gonzalez
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Jan Genoe
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | | | - Paul Heremans
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
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3
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Hu H, Niu G, Jiang J, Wang X, Liu X, Che L, Sui L, Zeng X, Wu G, Yuan K, Yang X. Pressure-Induced Changes in the Phase Distribution and Carrier Dynamics of Quasi-Two-Dimensional Ruddlesden-Popper Perovskites. J Phys Chem Lett 2024; 15:8142-8150. [PMID: 39092613 DOI: 10.1021/acs.jpclett.4c01879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites hold significant potential for diverse design strategies due to their tunable structures, exceptional optical properties, and environmental stability. Due to the complexity of the structure and carrier dynamics, characterization methods such as photoluminescence and absorption spectroscopy can observe but cannot precisely distinguish or identify the phase distribution within quasi-2D perovskite films or correlate phases with carrier dynamics. In this study, we used pressure to modulate the intralayer and interlayer structures of (PEA)2Csn-1PbnBr3n+1 quasi-2D perovskite films, investigating charge carrier dynamics. Steady-state spectroscopy revealed phase transitions at 1.62, 3, and 8 GPa, with free excitons transforming into self-trapped excitons after 8 GPa. Transient absorption spectroscopy elucidated the structural evolution, energy transfer, and pressure-induced transition mechanisms. The results demonstrate that combining pressure and spectroscopy enables the precise identification of phase distribution and pressure response ranges and reveals photophysical mechanisms, providing new insights for optimizing optoelectronic materials.
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Affiliation(s)
- Haiyang Hu
- Department of Physics, School of Science, Dalian Maritime University, Dalian 116026, P. R. China
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
| | - Guangming Niu
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
- Marine Engineering College, Dalian Maritime University, Dalian 116026, P. R. China
| | - Jutao Jiang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P. R. China
| | - Xiaowei Wang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P. R. China
| | - Xin Liu
- Department of Physics, School of Science, Dalian Maritime University, Dalian 116026, P. R. China
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
| | - Li Che
- Department of Physics, School of Science, Dalian Maritime University, Dalian 116026, P. R. China
| | - Laizhi Sui
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P. R. China
| | - Xiangyu Zeng
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
| | - Guorong Wu
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
| | - Kaijun Yuan
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
- University of the Chinese Academy of Sciences, Beijing 100039, P. R. China
| | - Xueming Yang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, P. R. China
- Department of Chemistry, College of Science, Southern University of Science and Technology, Shenzhen 518055, P. R. China
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4
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Gao H, Chen Y, Zhang R, Cao R, Wang Y, Tian Y, Xiao Y. Dual-ligand quasi-2D perovskites with chiral-induced spin selectivity for room temperature spin-LEDs. MATERIALS HORIZONS 2024; 11:2906-2913. [PMID: 38567407 DOI: 10.1039/d3mh02029k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Spin-LEDs have been a central topic in semiconductor spintronics research and represent a promising avenue for advanced optoelectronic devices and applications. The future advancements of spin-LEDs will undoubtedly hinge on the generation and manipulation of spin-polarized population at room temperature. In this research, we elucidate the development of room-temperature spin-LEDs using quasi-2D perovskites, based on the chiral-induced spin selectivity (CISS) effect. During the carrier transfer from the chiral n2 phase to the randomly oriented high-n phase caused by the bandgap gradient distribution, CISS works to generate non-equilibrium spin population, leading to room-temperature spin-polarized fluorescence. A spin-polarization of ∼93% is observed for the films. Finally, we realize spin-LEDs at room temperature, exhibiting a |gCP-EL| value of 0.05 and an EQE of 3.8%. This work highlights the potential of integrating dual ligands to optimize the phase distribution and crystalline orientation in quasi-2D films to achieve efficient CISS for spin-LED applications.
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Affiliation(s)
- Haotian Gao
- School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China.
| | - Yu Chen
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Ruxi Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China.
| | - Rui Cao
- School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China.
| | - Yong Wang
- School of Science, Tianjin University, Tianjin 300072, P. R. China.
| | - Yunfei Tian
- Analytical & Testing Center, Sichuan University, Sichuan 610065, P. R. China.
| | - Yin Xiao
- School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China.
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Lee S, Kim J, Kim H, Kim C, Kim S, Kim C, Lee H, Choi B, Muthu C, Kim T, Lee J, Lee S, Ihee H, Lee JY. Brightening deep-blue perovskite light-emitting diodes: A path to Rec. 2020. SCIENCE ADVANCES 2024; 10:eadn8465. [PMID: 38758786 PMCID: PMC11100563 DOI: 10.1126/sciadv.adn8465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Accepted: 04/15/2024] [Indexed: 05/19/2024]
Abstract
Deep-blue perovskite light-emitting diodes (PeLEDs) of high purity are highly sought after for next-generation displays complying with the Rec. 2020 standard. However, mixed-halide perovskite materials designed for deep-blue emitters are prone to halide vacancies, which readily occur because of the low formation energy of chloride vacancies. This degrades bandgap instability and performance. Here, we propose a chloride vacancy-targeting passivation strategy using sulfonate ligands with different chain lengths. The sulfonate groups have a strong affinity for lead(II) ions, effectively neutralizing vacancies. Our strategy successfully suppressed phase segregation, yielding color-stable deep-blue PeLEDs with an emission peak at 461 nanometers and a maximum luminance (Lmax) of 2707 candela per square meter with external quantum efficiency (EQE) of 3.05%, one of the highest for Rec. 2020 standard-compliant deep-blue PeLEDs. We also observed a notable increase in EQE up to 5.68% at Lmax of 1978 candela per square meter with an emission peak at 461 nanometers by changing the carbon chain length.
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Affiliation(s)
- Seungjae Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyojun Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changwon Kim
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Siin Kim
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changjo Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Heeseung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Bongjun Choi
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Chinnadurai Muthu
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Taehyun Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jihyung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Seungbok Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyotcherl Ihee
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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Ngai KH, Sun X, Zou X, Fan K, Wei Q, Li M, Li S, Lu X, Meng W, Wu B, Zhou G, Long M, Xu J. Charge Injection and Auger Recombination Modulation for Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309500. [PMID: 38447143 PMCID: PMC11095209 DOI: 10.1002/advs.202309500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Revised: 02/19/2024] [Indexed: 03/08/2024]
Abstract
The inefficient charge transport and large exciton binding energy of quasi-2D perovskites pose challenges to the emission efficiency and roll-off issues for perovskite light-emitting diodes (PeLEDs) despite excellent stability compared to 3D counterparts. Herein, alkyldiammonium cations with different molecular sizes, namely 1,4-butanediamine (BDA), 1,6-hexanediamine (HDA) and 1,8-octanediamine (ODA), are employed into quasi-2D perovskites, to simultaneously modulate the injection efficiency and recombination dynamics. The size increase of the bulky cation leads to increased excitonic recombination and also larger Auger recombination rate. Besides, the larger size assists the formation of randomly distributed 2D perovskite nanoplates, which results in less efficient injection and deteriorates the electroluminescent performance. Moderate exciton binding energy, suppressed 2D phases and balanced carrier injection of HDA-based PeLEDs contribute to a peak external quantum efficiency of 21.9%, among the highest in quasi-2D perovskite based near-infrared devices. Besides, the HDA-PeLED shows an ultralong operational half-lifetime T50 up to 479 h at 20 mA cm‒2, and sustains the initial performance after a record-level 30 000 cycles of ON-OFF switching, attributed to the suppressed migration of iodide anions into adjacent layers and the electrochemical reaction in HDA-PeLEDs. This work provides a potential direction of cation design for efficient and stable quasi-2D-PeLEDs.
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Affiliation(s)
- Kwan Ho Ngai
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
| | - Xinwen Sun
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
| | - Xinhui Zou
- Department of Physics and William Mong Institute of Nano Science and TechnologyThe Hong Kong University of Science and TechnologyClear Water BayKowloon999077Hong Kong
| | - Kezhou Fan
- Department of Physics and William Mong Institute of Nano Science and TechnologyThe Hong Kong University of Science and TechnologyClear Water BayKowloon999077Hong Kong
| | - Qi Wei
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityKowloon999077Hong Kong
| | - Mingjie Li
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityKowloon999077Hong Kong
| | - Shiang Li
- Department of PhysicsThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
| | - Xinhui Lu
- Department of PhysicsThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
| | - Weiwei Meng
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Bo Wu
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Guofu Zhou
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Mingzhu Long
- South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Jianbin Xu
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew Territories999077Hong Kong
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Wu XG, Sun S, Song T, Zhang X, Wang C, Yang Y, Wang S, Zhong H. Revealing the vertical structure of in-situ fabricated perovskite nanocrystals films toward efficient pure red light-emitting diodes. FUNDAMENTAL RESEARCH 2024; 4:362-368. [PMID: 38933501 PMCID: PMC11197484 DOI: 10.1016/j.fmre.2022.05.004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 04/29/2022] [Accepted: 05/06/2022] [Indexed: 10/18/2022] Open
Abstract
The development of efficient perovskite light-emitting diodes (PeLEDs) relies strongly on the fabrication of perovskite films with rationally designed structures (grain size, composition, surface, etc.). Therefore, an understanding of structure-performance relationships is of vital importance for developing high-performance perovskite devices, particularly for devices with in-situ fabricated perovskite nanocrystal films. In this study, we reveal the vertical structure of an in-situ fabricated quasi-two-dimensional perovskite film. By combining time-of-flight secondary ion mass spectrometry, energy dispersive spectroscopy, grazing incidence wide-angle X-ray scattering (GIWAXS), and low-temperature photoluminescence spectra, we illustrate that the resulting in-situ fabricated DPPA2Csn-1Pbn(Br0.3I0.7)3n+1 (DPPA+: 3,3-diphenylpropylammonium) film has a gradient structure with a very thin layer of ligands on the surface, predominantly small-n domains at the top, and predominantly large-n domains at the bottom owing to the solubility difference of the precursors. In addition, GIWAXS measurements show that the domain of n = 2 on the top layer has an ordered in-plane alignment. Based on the understanding of the film structure, we developed an in-situ fabrication process with ligand exchange to achieve efficient pure red PeLEDs at 638 nm with an average external quantum efficiency (EQE) of 7.4%. The optimized device had a maximum luminance of 623 cd/m2 with a peak EQE of 9.7%.
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Affiliation(s)
- Xian-gang Wu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Shipei Sun
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Tinglu Song
- Experimental Center of Advanced Materials, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xin Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Chenhui Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China
| | - Shuangpeng Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau 999078, China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
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8
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Lu J, Zhou C, Zheng F, Ghasemi M, Li Q, Lin KT, Jia B, Wen X. Fabrication and Characterization of 2D Layered Perovskites with a Gradient Band Gap. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37466342 DOI: 10.1021/acsami.3c06850] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
Vertical gradient band-gap heterostructures of two-dimensional (2D) layered perovskites have attracted considerable research interest due to their superior optoelectronic properties and demonstrated potential for use in optical devices. However, its fabrication has been challenging. In this investigation, 2D Ruddlesden-Popper mixed halide perovskite single crystals with a vertical gradient band gap were synthesized by using a solid-state halide diffusion process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements after diffusion confirm that the crystalline and morphology remain intact. The transmittance and photoluminescence (PL) spectra show the formation of a vertical gradient band gap that is ascribed to gradient halide distribution through halide intermixing. The mixed halide crystal exhibits high stability with completely suppressed phase segregation in the time-dependent PL measurement. The time-resolved photoluminescence (TRPL) spectra prove that the mixed halide sample has an enhanced carrier transport due to the Förster resonance energy transfer (FRET) effect. Besides, the halide diffusion behavior is found to be different from the previously proposed "layer-by-layer" diffusion model in exfoliated crystals. The gradient band-gap structure is critical for various applications in which vertical carrier transport is demanded.
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Affiliation(s)
- Junlin Lu
- School of Science, Computing and Engineering Technologies, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Chunhua Zhou
- College of Physics and Optoelectronics, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Shanxi, Taiyuan 030024, China
| | - Fei Zheng
- School of Chemistry and ARC Centre of Excellence in Exciton Science, The University of Melbourne, Parkville, VIC 3010, Australia
| | - Mehri Ghasemi
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Qi Li
- School of Science, Computing and Engineering Technologies, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Keng-Te Lin
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Baohua Jia
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Xiaoming Wen
- School of Science, RMIT University, Melbourne, VIC 3000, Australia
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9
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Yang F, Zeng Q, Dong W, Kang C, Qu Z, Zhao Y, Wei H, Zheng W, Zhang X, Yang B. Rational adjustment to interfacial interaction with carbonized polymer dots enabling efficient large-area perovskite light-emitting diodes. LIGHT, SCIENCE & APPLICATIONS 2023; 12:119. [PMID: 37188664 DOI: 10.1038/s41377-023-01150-1] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2023] [Revised: 04/07/2023] [Accepted: 04/09/2023] [Indexed: 05/17/2023]
Abstract
Film uniformity of solution-processed layers is the cornerstone of large-area perovskite light-emitting diodes, which is often determined by the 'coffee-ring effect'. Here we demonstrate a second factor that cannot be ignored is the solid-liquid interface interaction between substrate and precursor and can be optimized to eliminate rings. A perovskite film with rings can be formed when cations dominate the solid-liquid interface interaction; whereas smooth and homogeneous perovskite emitting layers are generated when anions and anion groups dominate the interaction. This is due to the fact that the type of ions anchored to the substrate can determine how the subsequent film grows. This interfacial interaction is adjusted using carbonized polymer dots, who also orient the perovskite crystals and passivate their buried traps, enabling a 225 mm2 large-area perovskite light-emitting diode with a high efficiency of 20.2%.
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Affiliation(s)
- Fan Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Qingsen Zeng
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Wei Dong
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, China
| | - Chunyuan Kang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Zexing Qu
- Institute of Theoretical Chemistry and Laboratory of Theoretical & Computational Chemistry, Jilin University, Changchun, 130023, China
| | - Yue Zhao
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Haotong Wei
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Weitao Zheng
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, China
| | - Xiaoyu Zhang
- Department of Materials Science, Key Laboratory of Mobile Materials MOE, State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun, 130012, China.
| | - Bai Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China.
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10
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Yang G, Tan X, Zhai L, Huang H, Wang Y, Jiang K, Yang Y, Zhang L, Tan Z, Wen H, Xu Y, Zou C. Color-stable blue light-emitting diodes with defect management by sulfonate. Chem Commun (Camb) 2023; 59:5906-5909. [PMID: 37097760 DOI: 10.1039/d3cc00560g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/26/2023]
Abstract
Utilizing bromine-based quasi-two-dimensional (quasi-2D) perovskite is a feasible strategy to achieve efficient and stable blue perovskite light-emitting diodes (PeLEDs). However, dimension discretization is prone to emerge due to the irregular phase distribution and massive defects in the perovskite system. Here, we introduce alkali-salt to modulate the phase distribution for reducing the n = 1 phase and propose a novel Lewis base to serve as a passivating agent to decrease defects. This revealed that the external quantum efficiency (EQE) dramatically improves due to the suppression of severe non-radiative recombination losses. Consequently, efficient blue PeLEDs were obtained with a peak EQE of 3.82% located at 487 nm.
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Affiliation(s)
- Guanghong Yang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - Xingxing Tan
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - Lanlan Zhai
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - He Huang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - Yingyu Wang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - Kemin Jiang
- Center for Analysis and Measurements, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China
| | - Yun Yang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - Lijie Zhang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - Zhan'ao Tan
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Haihong Wen
- National and Local Joint Engineering Research Centre of Ecological Treatment Technology for Urban Water Pollution, Wenzhou University, Wenzhou 325035, China.
| | - Yuting Xu
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - Chao Zou
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
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11
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Liu L, Ge H, Wang Y, Zhang Z, Piao J, Qiu J, Zhang B, Shen W, Cao K, Aleshin AN, Chen S. Multidentate Zwitterionic Ligand-Assisted Formation of Pure Bromide-Based Perovskite Nanosheets and Their Application in Blue Light-Emitting Diodes. J Phys Chem Lett 2023; 14:2736-2743. [PMID: 36897044 DOI: 10.1021/acs.jpclett.3c00404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) have demonstrated rapid development during the past decade, whereas the inferior device performance of blue ones impedes the application in full-color display and lighting. Low-dimensional perovskites turn out to be the most promising blue-emitters owing to their superior stability. In this work, a multidentate zwitterionic l-arginine is proposed to achieve blue emission from pure bromide-based perovskites by in situ-forming low-dimensional nanosheets. First, l-arginine can promote the formation of perovskite nanosheets due to the strong interaction between the peripheral guanidinium cations and [PbBr6]4- octahedral layers, enabling a significant blue-shift. Second, the carboxyl group within l-arginine can passivate uncoordinated Pb2+ ions, improving the device performance. Finally, a blue PeLED is successfully constructed on the basis of the l-arginine-modulated perovskite film, demonstrating a peak luminance of 2152 cd/m2, an external quantum efficiency of 5.4%, and operation lifetime of 13.81 min. Further, the enlightenment from this work is hopefully to be applied in rationally designing spacer cations for low-dimensional perovskite optoelectronic devices.
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Affiliation(s)
- Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Honggang Ge
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Yun Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Zhongjin Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Junxian Piao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Jiahao Qiu
- Center for Advanced Analytical Science, School of Chemistry and Chemical Engineering, Guangzhou Key Laboratory of Sensing Materials & Devices, Guangzhou University, Guangzhou 510006, China
| | - Baohua Zhang
- Center for Advanced Analytical Science, School of Chemistry and Chemical Engineering, Guangzhou Key Laboratory of Sensing Materials & Devices, Guangzhou University, Guangzhou 510006, China
| | - Wei Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Andrey N Aleshin
- Ioffe Institute, 26 Politekhnicheskaya, St. Petersburg 194021, Russia
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210023, China
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12
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Qin C, Zhang S, Zhou Z, Han T, Song J, Ma S, Jia G, Jiao Z, Zhu Z, Chen X, Jiang Y. Low amplified spontaneous emission threshold from 2-thiophenemethylammonium quasi-2D perovskites via phase engineering. OPTICS EXPRESS 2022; 30:36541-36551. [PMID: 36258580 DOI: 10.1364/oe.471849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Accepted: 08/31/2022] [Indexed: 06/16/2023]
Abstract
Quasi-2D Ruddlesden-Popper perovskites attract great attention as an optical gain media in lasing applications due to their excellent optoelectronic properties. Herein, a novel quasi-2D Ruddlesden-Popper perovskite based on 2-thiophenemethylammonium (ThMA) is synthesized by a facile solution-processed method. In addition, an anti-solvent treatment method is proposed to tune the phase distribution, and preferential orientation of quasi-2D (ThMA)2Csn-1PbnBr3n+1 thin films. The large-n-dominated narrow domain distribution improves the energy transfer efficiency from small-n to large-n phases. Also, the highly oriented nanocrystals facilitate the efficient Förster energy transfer, beneficial for the carrier population transfer. Furthermore, a green amplified spontaneous emission with a low threshold of 13.92 µJ/cm2 is obtained and a single-mode vertical-cavity laser with an 0.4 nm linewidth emission is fabricated. These findings provide insights into the design of the domain distribution to realize low-threshold multicolor continuous-wave or electrically driven quasi-2D perovskites laser.
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13
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Liu B, Li J, Wang G, Ye F, Yan H, Zhang M, Dong SC, Lu L, Huang P, He T, Xu P, Kwok HS, Li G. Lattice strain modulation toward efficient blue perovskite light-emitting diodes. SCIENCE ADVANCES 2022; 8:eabq0138. [PMID: 36149957 PMCID: PMC9506712 DOI: 10.1126/sciadv.abq0138] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2022] [Accepted: 08/09/2022] [Indexed: 05/19/2023]
Abstract
The successful implementation of perovskite light-emitting diodes (PeLEDs) in advanced displays and lighting has proven to be challenging because of the inferior performance of blue devices. Here, we point out that a strained system would lead to the quasi-degenerate energy state to enhance the excited-state transition due to the formation of double-polarized transition channel. The tensile strained structure also brings about a synergetic control of the carrier dynamics in virtue of lattice structure deformation and reduced dimensional phase regulation to promote carrier population in large bandgap domains and to realize near-unit energy transfer from the large bandgap phases to the emitter phases. Accordingly, high external quantum efficiencies of 14.71 and 10.11% are achieved for the 488- and 483-nanometer PeLEDs. This work represents a versatile strategy using a strained system to achieve enhanced radiative emission for the development of efficient PeLEDs.
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Affiliation(s)
- Baoxing Liu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junzi Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Gui Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Fanghao Ye
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Huibo Yan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Meng Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shou-Cheng Dong
- State Key Lab of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
- Insititute for Advanced Study, Hong Kong University of Science and Technology,Clear Water Bay, Kowloon, Hong Kong
| | - Lei Lu
- School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055, China
| | - Pu Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
- Corresponding author. (P.H.); (T.H.); (G.L.)
| | - Tingchao He
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
- Corresponding author. (P.H.); (T.H.); (G.L.)
| | - Ping Xu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Hoi-Sing Kwok
- State Key Lab of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Guijun Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
- Corresponding author. (P.H.); (T.H.); (G.L.)
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14
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Huang S, Liu N, Liu Z, Zhan Z, Hu Z, Du Z, Zhang Z, Luo J, Du J, Tang J, Leng Y. Enhanced Amplified Spontaneous Emission in Quasi-2D Perovskite by Facilitating Energy Transfer. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33842-33849. [PMID: 35829674 DOI: 10.1021/acsami.2c07633] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Despite the superior optoelectronic properties of quasi-two-dimensional (quasi-2D) Ruddlesden-Popper halide perovskites, the inhomogeneous distribution of mixed phases result in inefficient energy transfer and multiple emission peaks. Herein, the insufficient energy funneling process at the high-energy phase is almost completely suppressed and the excitonic understanding of gain nature is studied in the energy funneling managed quasi-2D perovskite via introducing poly(vinyl pyrrolidone) (PVP) additive. The energy transfer process is facilitated from 0.37 to 0.26 ps after introducing the PVP additive, accelerating the exciton accumulation in the emissive state, and increasing the ratio of the high-dimensional phase for enhancing radiative emission. The gain lifetime is promoted to be as fast as 28 ps to outcompete nonradiative recombination during the build-up of population inversion. Simultaneously, the net gain coefficient is increased by more than twofold that of the pristine perovskite film. Owing to the remarkable gain properties, room-temperature amplified spontaneous emission is realized with a low threshold of 11.3 μJ/cm2, 4 times lower than 43 μJ/cm2 of the pristine film. Our findings suggest that the PVP-treated quasi-2D perovskite shows great promise for high-performance laser devices.
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Affiliation(s)
- Sihao Huang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Nian Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhengzheng Liu
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zijun Zhan
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Zhiping Hu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Zixiao Du
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Zeyu Zhang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Jiajun Luo
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Juan Du
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yuxin Leng
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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15
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Li N, Apergi S, Chan CCS, Jia Y, Xie F, Liang Q, Li G, Wong KS, Brocks G, Tao S, Zhao N. Diammonium-Mediated Perovskite Film Formation for High-Luminescence Red Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202042. [PMID: 35642723 DOI: 10.1002/adma.202202042] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2022] [Revised: 05/30/2022] [Indexed: 06/15/2023]
Abstract
3D mixed-halide perovskite-based red emitters combine excellent charge-transport characteristics with simple solution processing and good film formation; however, light-emitting diodes (LEDs) based on these emitters cannot yet outperform their nanocrystal counterparts. Here the use of diammonium halides in regulating the formation of mixed bromide-iodide perovskite films is explored. It is found that the diammonium cations preferentially bond to Pb-Br, rather than Pb-I, octahedra, promoting the formation of quasi-2D phases. It is proposed that the perovskite formation is initially dominated by the crystallization of the thermodynamically more favorable 3D phase, but, as the solution gets depleted from the regular A cations, thin shells of amorphous quasi-2D perovskites form. This leads to crystalline perovskite grains with efficiently passivated surfaces and reduced lattice strain. As a result, the diammonium-treated perovskite LEDs demonstrate a record luminance (10745 cd m-2 ) and half-lifetime among 3D perovskite-based red LEDs.
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Affiliation(s)
- Nan Li
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Sofia Apergi
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Christopher C S Chan
- Department of Physics, William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong
| | - Yongheng Jia
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Fangyan Xie
- Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Qiong Liang
- Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong
| | - Gang Li
- Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong
| | - Kam Sing Wong
- Department of Physics, William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong
| | - Geert Brocks
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
- Faculty of Science and Technology, University of Twente, Enschede, 7500AE, The Netherlands
| | - Shuxia Tao
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
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16
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Lin H, Zhang Z, Zhang H, Lin KT, Wen X, Liang Y, Fu Y, Lau AKT, Ma T, Qiu CW, Jia B. Engineering van der Waals Materials for Advanced Metaphotonics. Chem Rev 2022; 122:15204-15355. [PMID: 35749269 DOI: 10.1021/acs.chemrev.2c00048] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.
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Affiliation(s)
- Han Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Zhenfang Zhang
- School of Textile Science and Engineering, Xi'an Polytechnic University, Xi'an 710048, China
| | - Huihui Zhang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Keng-Te Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
| | - Xiaoming Wen
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yao Liang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yang Fu
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Alan Kin Tak Lau
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Tianyi Ma
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Baohua Jia
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
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17
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Zhao F, Ren A, Li P, Li Y, Wu J, Wang ZM. Toward Continuous-Wave Pumped Metal Halide Perovskite Lasers: Strategies and Challenges. ACS NANO 2022; 16:7116-7143. [PMID: 35511058 DOI: 10.1021/acsnano.1c11539] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Reliable and efficient continuous-wave (CW) lasers have been intensively pursued in the field of optoelectronic integrated circuits. Metal perovskites have emerged as promising gain materials for solution-processed laser diodes. Recently, the performance of CW perovskite lasers has been improved with the optimization of material and device levels. Nevertheless, the realization of CW pumped perovskite lasers is still hampered by thermal runaway, unwanted parasitic species, and poor long-term stability. This review starts with the charge carrier recombination dynamics and fundamentals of CW lasing in perovskites. We examine the potential strategies that can be used to improve the performance of perovskite CW lasers from the materials to device levels. We also propose the open challenges and future opportunities in developing high-performance and stable CW pumped perovskite lasers.
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Affiliation(s)
- Feiyun Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Aobo Ren
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Peihang Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Yan Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
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18
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Yang H, Tang J, Deng L, Liu Z, Yang X, Huang Z, Yu H, Wang K, Li J. Improved highly efficient Dion-Jacobson type perovskite light-emitting diodes by effective surface polarization architecture. Phys Chem Chem Phys 2022; 24:7969-7977. [PMID: 35311859 DOI: 10.1039/d1cp04951h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites are emerging as promising materials for highly stable light-emitting diodes (LEDs). However, their lower charge transport mobilities and higher defect densities may constrain their light-emitting efficiency. Here, we combine an excessive-salt-assisted (ESA) process with antisolvent treatments to inhibit the defects in Dion-Jacobson-type perovskite LEDs. Such a method could improve the film quality and recombination efficiency. By further investigation, we found that artificially building a bulk junction interface and enhancing surface polarization could play a more important role in promoting the ability of charge carrier injection and recombination for high-performance LED devices. Accordingly, the DJ-type quasi-2D perovskite LED can achieve a high external quantum efficiency (EQE) of 7.1%.
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Affiliation(s)
- Hanjun Yang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China. .,Jiangxi Key Laboratory of Flexible Electronics, Flexible Electronics Innovation Institute, Jiangxi Science & Technology Normal University, Nanchang 330013, Jiangxi, China
| | - Jun Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China.
| | - Liangliang Deng
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China.
| | - Zhe Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China.
| | - Xia Yang
- Department of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zengqi Huang
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), 2 Zhongguancun Beiyi Street, Beijing 100190, China
| | - Haomiao Yu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China.
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China.
| | - Jinpeng Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China.
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19
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Chen CH, Kuo YH, Lin YK, Ni IC, Lin BH, Wu CI, Yip HL, Kuo CC, Chueh CC. Enhancing the Performance of Quasi-2D Perovskite Light-Emitting Diodes Using Natural Cyclic Molecules with Distinct Phase Regulation Behaviors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9587-9596. [PMID: 35142213 DOI: 10.1021/acsami.1c23594] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this study, two natural small molecules, α-cyclodextrin (α-CD) and β-cyclodextrin (β-CD), are used as additives to improve the performance of quasi-2D PEA2Csn-1PbnBr3n+1 (n = 3, herein) PeLEDs. Both of them are shown to efficiently passivate the quasi-2D perovskite films to afford improved film quality and morphology, but they exhibit distinct phase regulation behaviors possibly due to their different pore sizes. It reveals that α-CD effectively suppresses the formation of the low-n phases (n ≤ 2), while β-CD better regulates the phase with a medium-n value (n = 3). Because of effectively suppressing the formation of low-n phases, the CD-assisted quasi-2D perovskite films possess facilitated exciton energy transfer and reduced nonradiative recombination. Consequently, the optimized α-CD-derived PeLED shows the highest luminance (Lmax) of 37,825 cd/m2 with an external quantum efficiency (EQE) of 3.81%, while the β-CD-derived PeLED delivers a lower Lmax of 24,793 cd/m2 with an EQE of 3.09%. Compared to the pristine device, Lmax is enhanced by 6.3 and 3.8 times for α-CD- and β-CD-based PeLEDs, respectively, and EQE is enhanced by ∼4.8 times for both devices; besides, both CD-assisted devices also exhibit improved color purity and a lower bias dependency of electroluminescent intensity.
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Affiliation(s)
- Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yen-Hung Kuo
- Insitute of Organic and Polymeric Material, National Taipei University of Technology, Taipei 10617, Taiwan
| | - Yu-Kuan Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - I-Chih Ni
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chih-I Wu
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon 999077 Hong Kong, P. R. China
| | - Chi-Ching Kuo
- Insitute of Organic and Polymeric Material, National Taipei University of Technology, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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20
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Wang C, Dai G, Wang J, Cui M, Yang Y, Yang S, Qin C, Chang S, Wu K, Liu Y, Zhong H. Low-Threshold Blue Quasi-2D Perovskite Laser through Domain Distribution Control. NANO LETTERS 2022; 22:1338-1344. [PMID: 35049298 DOI: 10.1021/acs.nanolett.1c04666] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quasi-2D perovskites, composed of self-organized quantum well structures, are emerging as gain materials for laser applications. Here we investigate the influence of domain distribution on the laser emission of CsPbCl1.5Br1.5-based quasi-2D perovskites. The use of 2,2-diphenylethylammonium bromide (DPEABr) as a ligand enables the formation of quasi-2D film with a large-n-dominated narrow domain distribution. Due to the reduced content of small-n domains, the incomplete energy transfer from small-n to large-n domains can be greatly addressed. Moreover, the photoinduced carriers can be concentrated on most of the large-n domains to reduce the local carrier density, thereby suppressing the Auger recombination. By controlling the domain distribution, we achieve blue amplified spontaneous emission and single-mode vertical-cavity surface-emitting lasing with low thresholds of 6.5 and 9.2 μJ cm-2, respectively. This work provides a guideline to design the domain distribution to realize low-threshold multicolor perovskite lasers.
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Affiliation(s)
- Chenhui Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Guang Dai
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- School of Science, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Junhui Wang
- State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Minghuan Cui
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
| | - Sirui Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Chaochao Qin
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Shuai Chang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Yufang Liu
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
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21
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Zeng J, Qi Y, Liu Y, Chen D, Ye Z, Jin Y. ZnO-Based Electron-Transporting Layers for Perovskite Light-Emitting Diodes: Controlling the Interfacial Reactions. J Phys Chem Lett 2022; 13:694-703. [PMID: 35023745 DOI: 10.1021/acs.jpclett.1c04117] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) provide new opportunities for cost-effective and large-area electroluminescent devices. It is of interest to use ZnO-based electron-transport layers (ETLs), which demonstrate superior performance in other solution-processed LEDs, in PeLEDs. However, the notorious deprotonation reaction between ZnO and perovskite casts doubt on the long-term stability of PeLEDs with ZnO-based ETLs. This Perspective presents an overview of the chemical reactions that may occur at the interfaces between perovskite and ZnO-based ETLs. We highlight that other interfacial reactions during the fabrication of PeLEDs, including the reactions between ZnO and the intermediate phase during perovskite crystallization and the amidation reactions catalyzed by ZnO, demonstrate critical utilities in the fabrication of high-efficiency and stable PeLEDs. Considering these recent advances, we propose future directions and prospects to design and control the interfacial reactions, aiming to fully exploit the potential of ZnO-based ETLs for realizing high-performance PeLEDs.
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Affiliation(s)
- Jiejun Zeng
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yuhui Qi
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yang Liu
- State Key Laboratory of Silicon Materials, School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Desui Chen
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Zhizhen Ye
- State Key Laboratory of Silicon Materials, School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Yizheng Jin
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
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22
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Lian Y, Yang Y, He L, Yang X, Gao J, Qin C, Niu L, Yang X. Enhancing the Luminance Efficiency of Formamidinium-Based Dion-Jacobson Perovskite Light-Emitting Diodes via Compositional Engineering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:1659-1669. [PMID: 34962751 DOI: 10.1021/acsami.1c18439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this paper, the phase formation mechanism of formamidinium (FA)-based Dion-Jacobson (DJ) perovskites is uncovered for the first time, which includes the formation of the n1 domain (n = 1 perovskite phase) and a trace amount of the large n domain in the spin-coating process and the growth of the n2 domain and the large n domain during the thermal annealing stage. The phase formation mechanism clearly reveals the different phase distributions between FA-based Ruddlesden-Popper (RP) and FA-based DJ perovskite films at different stages of film preparation due to the larger formation energy of the DJ perovskites. According to this phase formation mechanism, we put forward an effective strategy of the small A-site cation compositional engineering. Then, excess perovskitizer cations (FA+) are introduced to increase the crystallinity, modulate the phase distribution and passivate defects without disturbing the structure of DJ perovskites simultaneously. The final green-light DJ PeLED devices show a maximum luminance of 41 520 cd/m2 and a maximum current efficiency of 31.1 cd/A (EQE: 8.5%), which are the record values so far. The final DJ PeLEDs show an improved operational lifetime of ca. 15 min at an initial luminance of ca. 800 cd/m2. Our results suggest that DJ perovskites can be promising for light-emitting applications.
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Affiliation(s)
- Yajun Lian
- School of Physical Science and Technology, Chongqing key Laboratory of Micro & Nano Structure Optoelectronics, Southwest University, Chongqing 400715, People's Republic of China
| | - Ye Yang
- School of Physical Science and Technology, Chongqing key Laboratory of Micro & Nano Structure Optoelectronics, Southwest University, Chongqing 400715, People's Republic of China
| | - Lihong He
- School of Physical Science and Technology, Chongqing key Laboratory of Micro & Nano Structure Optoelectronics, Southwest University, Chongqing 400715, People's Republic of China
| | - Xiaoli Yang
- School of Physical Science and Technology, Chongqing key Laboratory of Micro & Nano Structure Optoelectronics, Southwest University, Chongqing 400715, People's Republic of China
| | - Jiulin Gao
- School of Physical Science and Technology, Chongqing key Laboratory of Micro & Nano Structure Optoelectronics, Southwest University, Chongqing 400715, People's Republic of China
| | - Chaochao Qin
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Lianbin Niu
- College of Physics & Electrical Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Xiaohui Yang
- School of Physical Science and Technology, Chongqing key Laboratory of Micro & Nano Structure Optoelectronics, Southwest University, Chongqing 400715, People's Republic of China
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23
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Liu Y, Ono LK, Tong G, Bu T, Zhang H, Ding C, Zhang W, Qi Y. Spectral Stable Blue-Light-Emitting Diodes via Asymmetric Organic Diamine Based Dion-Jacobson Perovskites. J Am Chem Soc 2021; 143:19711-19718. [PMID: 34792336 PMCID: PMC8961879 DOI: 10.1021/jacs.1c07757] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
![]()
The spectral instability issue is
a challenge in blue perovskite
light-emitting diodes (PeLEDs). Dion–Jacobson (DJ) phase perovskites
are promising alternatives to achieve high-quality blue PeLEDs. However,
the current exploration of DJ phase perovskites is focused on symmetric
divalent cations, and the corresponding efficiency of blue PeLEDs
is still inferior to that of green and red ones. In this work, we
report a new type of DJ phase CsPb(Br/Cl)3 perovskite via
introduction of an asymmetric molecular configuration as the organic
spacer cation in perovskites. The primary and tertiary ammonium groups
on the asymmetric cations bridge with the lead halide octahedra forming
the DJ phase structures. Stable photoluminescence spectra were demonstrated
in perovskite films owing to the suppressed halide segregation. Meanwhile,
the radiative recombination efficiency of charges is improved significantly
as a result of the confinement effects and passivation of charge traps.
Finally, we achieved an external quantum efficiency of 2.65% in blue
PeLEDs with stable spectra emission under applied bias voltages. To
our best knowledge, this is the first report of asymmetric cations
used in PeLEDs, which provides a facile solution to the halide segregation
issue in PeLEDs.
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Affiliation(s)
- Yuqiang Liu
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan.,College of Textiles & Clothing, Qingdao University, Qingdao 266071, China
| | - Luis K Ono
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
| | - Guoqing Tong
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
| | - Tongle Bu
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
| | - Hui Zhang
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
| | - Chenfeng Ding
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
| | - Wei Zhang
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
| | - Yabing Qi
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
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24
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Sun Q, Zhao C, Yin Z, Wang S, Leng J, Tian W, Jin S. Ultrafast and High-Yield Polaronic Exciton Dissociation in Two-Dimensional Perovskites. J Am Chem Soc 2021; 143:19128-19136. [PMID: 34730344 DOI: 10.1021/jacs.1c08900] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Layered two-dimensional (2D) lead halide perovskites are a class of quantum well (QW) materials, holding dramatic potentials for optical and optoelectronic applications. However, the thermally activated exciton dissociation into free carriers in 2D perovskites, a key property that determines their optoelectronic performance, was predicted to be weak due to large exciton binding energy (Eb, about 100-400 meV). Herein, in contrast to the theoretical prediction, we discover an ultrafast (<1.4 ps) and highly efficient (>80%) internal exciton dissociation in (PEA)2(MA)n-1PbnI3n+1 (PEA = C6H5C2H4NH3+, MA = CH3NH3+, n = 2-4) 2D perovskites despite the large Eb. We demonstrate that the exciton dissociation activity in 2D perovskites is significantly promoted because of the formation of exciton-polarons with considerably reduced exciton binding energy (down to a few tens of millielectronvolts) by the polaronic screening effect. This ultrafast and high-yield exciton dissociation limits the photoluminescence of 2D perovskites but on the other hand well explains their exceptional performance in photovoltaic devices. The finding should represent a common exciton property in the 2D hybrid perovskite family and provide a guideline for their rational applications in light emitting and photovoltaics.
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Affiliation(s)
- Qi Sun
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.,MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chunyi Zhao
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.,Anhui Province Key Laboratory of Optoelectronic Material Science and Technology, School of Physics and Electronic Information, Anhui Normal University, Wuhu 241002, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zixi Yin
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shiping Wang
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing Leng
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Wenming Tian
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Shengye Jin
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
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25
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Zeng J, Xu L, Dong K, Yang K, Wang L. Multiple Heterojunction System of Boron Nitride‐Graphene/Black Phosphorene as Highly Efficient Solar Cell. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100169] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Jian Zeng
- Energy Materials Computing Center, School of Energy and Mechanical Engineering Jiangxi University of Science and Technology Nanchang 330013 China
| | - Liang Xu
- Energy Materials Computing Center, School of Energy and Mechanical Engineering Jiangxi University of Science and Technology Nanchang 330013 China
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics Hunan University Changsha 410082 China
| | - Kejun Dong
- Centre for Infrastructure Engineering, School of Engineering, Design and Built Environment Western Sydney University Penrith New South Wales 2751 Australia
| | - Kai Yang
- School of Chemistry and Chemical Engineering Jiangxi University of Science and Technology Ganzhou 341000 China
| | - Ling‐Ling Wang
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics Hunan University Changsha 410082 China
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