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Qin JX, Shen CL, Li L, Liu H, Zhang WY, Yang XG, Shan CX. Broadband Negative Photoconductive Response in Carbon Nanodots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404694. [PMID: 38857532 DOI: 10.1002/adma.202404694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 05/13/2024] [Indexed: 06/12/2024]
Abstract
Due to the broadband response and low selectivity of external light, negative photoconductivity (NPC) effect holds great potential applications in photoelectric devices. Herein, different photoresponsive carbon nanodots (CDs) are prepared from diverse precursors and the broadband response from the NPC CDs are utilized to achieve the optoelectronic logic gates and optical imaging for the first time. In detail, the mcu-CDs which are prepared by the microwave-assisted polymerization of citric acid and urea possess the large specific surface area and abundant hydrophilic groups as sites for the adsorption of H2O molecules and thereby present a high conductivity in dark. Meanwhile, the low affinity of mcu-CDs to H2O molecules permits the light-induced desorption of H2O molecules by heat effect and thus endow the mcu-CDs with a low conductivity under illumination. The easy absorption and desorption of H2O molecules contribute to the extraordinary NPC of mcu-CDs. With the broadband NPC response in CDs, the optoelectronic logic gates and flexible optical imaging system are established, achieving the applications of "NOR" or "NAND" logic operations and high-quality optical images. These findings unveil the unique optoelectronic properties of CDs, and have the potential to advance the applications of CDs in optoelectronic devices.
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Affiliation(s)
- Jin-Xu Qin
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Cheng-Long Shen
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Lei Li
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Hang Liu
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Wu-You Zhang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
| | - Xi-Gui Yang
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou, 450046, China
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou, 450052, China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou, 450046, China
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Ahmad F, Kandpal K, Singh R, Kumar R, Kumar P. Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (Bi 2Te 3/n-GaN) under unpolarized illumination. NANOSCALE 2024; 16:604-613. [PMID: 38050855 DOI: 10.1039/d3nr03360k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
A topological insulator has a unique graphene-like Dirac cone conducting surface state, which is excellent for broadband absorption and photodetector applications. Experimental investigations on the Bi2Te3/n-GaN heterojunction exhibited an aberrant photoelectric effect under the influence of unpolarized light. Transport measurements of the Bi2Te3/n-GaN heterojunction revealed a negative photoconductance, with a sudden increase in resistance. This was consistent with the applied range of wavelength and power used for incident light while it was contrary to the usual gap-state transition model, which states that a negative conductance is due to the trapping of charge carriers. The observed aberrant photoelectric effect seen in Bi2Te3/n-GaN heterojunction devices was due to the polycrystalline nature of the Bi2Te3 topological insulator film, where the incident photon-induced bandgap in the Dirac cone surface state resulted in a negative photoelectric effect. This phenomenon opens the possibility for applications in highly sensitive photodetectors and non-volatile memories, along with employing the bandgap-opening concept in retinomorphic devices.
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Affiliation(s)
- Faizan Ahmad
- Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ-85281, USA.
| | - Kavindra Kandpal
- Department of Electronics and Communication Engineering, IIIT-Allahabad, Prayagraj, 211012, India
| | - Roshani Singh
- Spintronics and Magnetic Materials Laboratory, Department of Applied Sciences, IIIT-Allahabad, Prayagraj, 211012, India.
| | - Rachana Kumar
- ASSIST Division, CSIR-Indian Institute of Toxicology Research, Lucknow, Uttar Pradesh, 226024, India
| | - Pramod Kumar
- Spintronics and Magnetic Materials Laboratory, Department of Applied Sciences, IIIT-Allahabad, Prayagraj, 211012, India.
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Kundu S, George SJ, Kulkarni GU. Fabrication of High-Performance Visible-Blind Ultraviolet Photodetectors Using Electro-ionic Conducting Supramolecular Nanofibers. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19270-19278. [PMID: 36996388 DOI: 10.1021/acsami.3c00716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The detection of ultraviolet (UV) light is vital for various applications, such as chemical-biological analysis, communications, astronomical studies, and also for its adverse effects on human health. Organic UV photodetectors are gaining much attention in this scenario because they possess properties such as high spectral selectivity and mechanical flexibility. However, the achieved performance parameters are much more inferior than the inorganic counterparts because of the lower mobility of charge carriers in organic systems. Here, we report the fabrication of a high-performance visible-blind UV photodetector, using 1D supramolecular nanofibers. The nanofibers are visibly inactive and exhibit highly responsive behavior mainly for UV wavelengths (275-375 nm), the highest response being at ∼275 nm. The fabricated photodetectors demonstrate desired features, such as high responsivity and detectivity, high selectivity, low power consumption, and good mechanical flexibility, because of their unique electro-ionic behavior and 1D structure. The device performance is shown to be improved by several orders through the tweaking of both electronic and ionic conduction pathways while optimizing the electrode material, external humidity, applied voltage bias, and by introducing additional ions. We have achieved optimum responsivity and detectivity values of around 6265 A W-1 and 1.54 × 1014 Jones, respectively, which stand out compared with the previous organic UV photodetector reports. The present nanofiber system has great potential for integration in future generations of electronic gadgets.
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Affiliation(s)
- Suman Kundu
- Centre for Nano and Soft Matter Sciences, Shivanapura, Bengaluru 562162, India
| | - Subi J George
- Supramolecular Chemistry Laboratory, New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru 560064, India
| | - Giridhar U Kulkarni
- Centre for Nano and Soft Matter Sciences, Shivanapura, Bengaluru 562162, India
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru 560064, India
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Boruah A, Roy K, Thakur A, Haldar S, Konwar R, Saikia P, Saikia BK. Biocompatible Nanodiamonds Derived from Coal Washery Rejects: Antioxidant, Antiviral, and Phytotoxic Applications. ACS OMEGA 2023; 8:11151-11160. [PMID: 37008143 PMCID: PMC10061642 DOI: 10.1021/acsomega.2c07981] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 03/02/2023] [Indexed: 06/19/2023]
Abstract
Coal washery rejects (CWRs) are a major byproduct produced in coal washery industries. We have chemically derived biocompatible nanodiamonds (NDs) from CWRs toward a wide range of biological applications. The average particle sizes of the derived blue-emitting NDs are found to be in the range of 2-3.5 nm. High-resolution transmission electron microscopy of the derived NDs depicts the crystalline structure with a d-spacing of 0.218 nm, which is attributed to the 100 lattice plane of a cubic diamond. The Fourier infrared spectroscopy, zeta potential, and X-ray photoelectron spectroscopy (XPS) data revealed that the NDs are substantially functionalized with oxygen-containing functional groups. Interestingly, the CWR-derived NDs exhibit strong antiviral properties (high inhibition of 99.3% with an IC50 value of 7.664 μg/mL) and moderate antioxidant activity that widen the possibility of biomedical applications. In addition, toxicological effects of NDs on the wheatgrass seed germination and seedling growth showed minimal inhibition (<9%) at the highest tested concentration of 300.0 μg/mL. The study also provides intriguing prospects of CWRs for the creation of novel antiviral therapies.
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Affiliation(s)
- Anusuya Boruah
- Coal
and Energy Division, CSIR-North East Institute
of Science and Technology, Jorhat 785006, Assam, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Kallol Roy
- Biological
Science & Technology Division, CSIR-North
East Institute of Science and Technology, Jorhat 785006, Assam, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Ashutosh Thakur
- Coal
and Energy Division, CSIR-North East Institute
of Science and Technology, Jorhat 785006, Assam, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Saikat Haldar
- Agrotechnology
and Rural Development Division, CSIR-North
East Institute of Science and Technology, Jorhat 785006, Assam, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Rituraj Konwar
- Biological
Science & Technology Division, CSIR-North
East Institute of Science and Technology, Jorhat 785006, Assam, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Prasenjit Saikia
- Coal
and Energy Division, CSIR-North East Institute
of Science and Technology, Jorhat 785006, Assam, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Binoy K. Saikia
- Coal
and Energy Division, CSIR-North East Institute
of Science and Technology, Jorhat 785006, Assam, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
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Zhang C, Yang X, Lv R, Lv C, Qin J, Liu H, Zang J, Dong L, Shan CX. Pentaheptite diamond: a new carbon allotrope. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:184003. [PMID: 35100570 DOI: 10.1088/1361-648x/ac506e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2021] [Accepted: 01/31/2022] [Indexed: 06/14/2023]
Abstract
The search forsp3-hybridized carbon allotropes other than diamond has attracted extensive interest because of their fascinating properties. In this paper, an orthorhombic carbon phase insp3bonding, named pentaheptite diamond, by combining the particle swarm optimization method with first-principles calculations has been predicted. The phonon spectra, total energy and elastic constants calculations of the pentaheptite diamond confirm its dynamical, thermal and mechanical stability at zero pressure, respectively. It possesses a high bulk modulus of 385 GPa and Vickers hardness of 72.6 GPa, comparable to diamond. Electronic band structure calculations show that the pentaheptite diamond has a direct band gap of 4.18 eV.
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Affiliation(s)
- Chuang Zhang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Xigui Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Ruoyun Lv
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Chaofan Lv
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Jinxu Qin
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Hang Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Jinhao Zang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
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