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Ortiz Jimenez V, Pham YTH, Zhou D, Liu M, Nugera FA, Kalappattil V, Eggers T, Hoang K, Duong DL, Terrones M, Rodriguez Gutiérrez H, Phan M. Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304792. [PMID: 38072638 PMCID: PMC10870067 DOI: 10.1002/advs.202304792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 11/04/2023] [Indexed: 02/17/2024]
Abstract
The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.
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Affiliation(s)
- Valery Ortiz Jimenez
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
- Nanoscale Device Characterization DivisionNational Institute of Standards and TechnologyGaithersburgMD20899USA
| | | | - Da Zhou
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Mingzu Liu
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | | | - Tatiana Eggers
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| | - Khang Hoang
- Center for Computationally Assisted Science and Technology and Department of PhysicsNorth Dakota State UniversityFargoND58108USA
| | - Dinh Loc Duong
- Department of PhysicsMontana State UniversityBozemanMT59717USA
| | - Mauricio Terrones
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
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Barik RK, Woods LM. High throughput calculations for a dataset of bilayer materials. Sci Data 2023; 10:232. [PMID: 37085503 PMCID: PMC10121719 DOI: 10.1038/s41597-023-02146-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 04/11/2023] [Indexed: 04/23/2023] Open
Abstract
Bilayer materials made of 2D monolayers are emerging as new systems creating diverse opportunities for basic research and applications in optoelectronics, thermoelectrics, and topological science among others. Herein, we present a computational bilayer materials dataset containing 760 structures with their structural, electronic, and transport properties. Different stacking patterns of each bilayer have been framed by analyzing their monolayer symmetries. Density functional theory calculations including van der Waals interactions are carried out for each stacking pattern to evaluate the corresponding ground states, which are correctly identified for experimentally synthesized transition metal dichalcogenides, graphene, boron nitride, and silicene. Binding energies and interlayer charge transfer are evaluated to analyze the interlayer coupling strength. Our dataset can be used for materials screening and data-assisted modeling for desired thermoelectric or optoelectronic applications.
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Affiliation(s)
- Ranjan Kumar Barik
- Department of Physics, University of South Florida, Tampa, Florida, 33620, USA.
| | - Lilia M Woods
- Department of Physics, University of South Florida, Tampa, Florida, 33620, USA.
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Hung CM, Dang DTX, Chanda A, Detellem D, Alzahrani N, Kapuruge N, Pham YTH, Liu M, Zhou D, Gutierrez HR, Arena DA, Terrones M, Witanachchi S, Woods LM, Srikanth H, Phan MH. Enhanced Magnetism and Anomalous Hall Transport through Two-Dimensional Tungsten Disulfide Interfaces. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13040771. [PMID: 36839139 PMCID: PMC9967397 DOI: 10.3390/nano13040771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 02/14/2023] [Accepted: 02/16/2023] [Indexed: 05/14/2023]
Abstract
The magnetic proximity effect (MPE) has recently been explored to manipulate interfacial properties of two-dimensional (2D) transition metal dichalcogenide (TMD)/ferromagnet heterostructures for use in spintronics and valleytronics. However, a full understanding of the MPE and its temperature and magnetic field evolution in these systems is lacking. In this study, the MPE has been probed in Pt/WS2/BPIO (biphase iron oxide, Fe3O4 and α-Fe2O3) heterostructures through a comprehensive investigation of their magnetic and transport properties using magnetometry, four-probe resistivity, and anomalous Hall effect (AHE) measurements. Density functional theory (DFT) calculations are performed to complement the experimental findings. We found that the presence of monolayer WS2 flakes reduces the magnetization of BPIO and hence the total magnetization of Pt/WS2/BPIO at T > ~120 K-the Verwey transition temperature of Fe3O4 (TV). However, an enhanced magnetization is achieved at T < TV. In the latter case, a comparative analysis of the transport properties of Pt/WS2/BPIO and Pt/BPIO from AHE measurements reveals ferromagnetic coupling at the WS2/BPIO interface. Our study forms the foundation for understanding MPE-mediated interfacial properties and paves a new pathway for designing 2D TMD/magnet heterostructures for applications in spintronics, opto-spincaloritronics, and valleytronics.
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Affiliation(s)
- Chang-Ming Hung
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Diem Thi-Xuan Dang
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Amit Chanda
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Derick Detellem
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Noha Alzahrani
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Nalaka Kapuruge
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Yen T. H. Pham
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Mingzu Liu
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Da Zhou
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | | | - Darío A. Arena
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Mauricio Terrones
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Sarath Witanachchi
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Lilia M. Woods
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
- Correspondence: (L.M.W.); (M.-H.P.)
| | - Hariharan Srikanth
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
| | - Manh-Huong Phan
- Department of Physics, University of South Florida, Tampa, FL 33620, USA
- Correspondence: (L.M.W.); (M.-H.P.)
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