Pancake π-π Bonding Goes Double: Unexpected 4e/All-Sites Bonding in Boron- and Nitrogen-Doped Phenalenyls

π-Extended 9b-Boraphenalenes: Synthesis, Structure, and Physical Properties

Boraphenalenes, compounds in which one carbon atom in the phenalenyl skeleton is replaced with a boron atom, have attracted attention for their solid-state and electronic structures; however, the construction of boraphenalene skeletons remains challenging because of the lack of suitable methods. Through this study, we showed that the tandem borylative cyclization of C3-symmetric dehydrobenzo[12]annulenes produces a new class of fully fused boron-atom-embedded polycyclic hydrocarbons possessing a 9b-boraphenalene skeleton. The obtained compounds exhibited high electron-accepting characteristics, and their two-step redox process was reversible in the reductive region, involving interconversion of 9b-boraphenalene between Hückel aromaticity and antiaromaticity. Notably, the benzo[b]fluorene-fused derivative exhibited a stepwise single-crystal-to-single-crystal (SCSC) phase transition triggered by thermal annealing. Intermolecular electron coupling calculation of the crystal structures suggested a significant improvement of charge transporting ability associated with the SCSC phase transition. Moreover, adequate photoconductivity was observed for the single crystals before and after the SCSC phase transition through flash photolysis-time-resolved microwave conductivity.

Triply Bonded Pancake π-Dimers Stabilized by Tetravalent Actinides

Aromatic π-stacking is a weakly attractive, noncovalent interaction often found in biological macromolecules and synthetic supramolecular chemistry. The weak nondirectional nature of π-stacking can present challenges in the design of materials owing to their weak, nondirectional nature. However, when aromatic π-systems contain an unpaired electron, stronger attraction involving face-to-face π-orbital overlap is possible, resulting in covalent so-called "pancake" bonds. Two-electron, multicenter single pancake bonds are well known, whereas four-electron double pancake bonds are rare. Higher-order pancake bonds have been predicted, but experimental systems are unknown. Here, we show that six-electron triple pancake bonds can be synthesized by a 3-fold reduction of hexaazatrinaphthylene (HAN) and subsequent stacking of the [HAN]3- triradicals. Our analysis reveals a multicenter covalent triple pancake bond consisting of a σ-orbital and two equivalent π-orbitals. An electrostatic stabilizing role is established for the tetravalent thorium and uranium ions in these systems. We also show that the electronic absorption spectrum of the triple pancake bonds closely matches computational predictions, providing experimental verification of these unique interactions. The discovery of conductivity in thin films of triply bonded π-dimers presents new opportunities for the discovery of single-component molecular conductors and other spin-based molecular materials.

Dimerization of the BNB/NBN Bond Embedded Phenalenyls

Two plane-like molecules 1 and 2 were designed and characterized by the introduction of BNB or NBN bonds into the plane phenalenyl. The ocalized molecular orbital (LMO) analysis show three...

Periodic B- and N-doped phenalenyl π-aggregates: unexpected nonlinear optical properties by tuning pancake π-π bonding

Phenalenyl (PLY) and its derivatives could form one-dimensional π-aggregates through pancake π-π bonding, which would lead to exotic optoelectronic properties. We will highlight the key aspects of the PLY derivatives from the design strategies to exploration of the electronic properties. Here, we primarily construct alternating boron (B)- and nitrogen (N)-doped PLY π-aggregates: dimer[12], trimer[12-1], trimer[12-2], tetramer[12]₂, pentamer[12]₂-1, pentamer[12]₂-2, and hexamer[12]₃. The geometric and electronic structures show that the short intermolecular distances of the π-aggregates drive the formation of pancake π-π bonding. Significantly, the molecular structures show periodic changes in the π-aggregates, but the first hyperpolarizabilities (β_tot) present unexpected changes, which are found to increase sharply with increasing even layer thickness due to intermolecular charge transfer. The β_tot value of hexamer[12]₃ (5.72 × 10⁴ a.u.) is 6.4 times that of tetramer[12]₂ (8.95 × 10³ a.u.), and is 22.4 times that of dimer[12] (2.55 × 10³ a.u.). Thus, constructing π-aggregates can significantly improve the second-order NLO response, which is mainly due to intermolecular charge transfer through pancake π-π bonding of the interlayers.

Charge transport properties of open-shell graphene fragments: a computational study of the phenalenyl tilings

Thinking outside the box of the phenalenyl radical: a systematic structure design strategy, phenalenyl tiling, is found to benefit the electron transport properties of open-shell graphene fragments with one free radical. Compared with the closed-shell species, phenalenyl-based π-radicals exhibit smaller intramolecular reorganization energies and larger intermolecular electronic couplings. However, the on-site Coulomb repulsion can be too strong and impedes the charge transport efficiency of such materials. The repulsion can be weakened in radical species by spin delocalization. In this paper, the extended π-radicals we studied are categorized into three types of open-shell structures: the zigzag, the armchair and the discotic odd alternant hydrocarbons. The latter two belong to phenalenyl tilings. We found that the phenalenyl tilings fully inherit the desirable features of the singly occupied molecular orbital of the phenalenyl radical in a predictable and delocalized fashion, and their on-site Coulomb repulsion is effectively reduced. The zigzag π-radicals are less satisfactory. Therefore, the phenalenyl tilings are favorable candidates for charge transporting materials.

Superhalogen doping: a new and effective approach to design materials with excellent static and dynamic NLO responses

The first-ever example where superhalogen doping alone is introduced as a new and effective approach to impart large NLO responses.

Effect of Substitution on the Hysteretic Phase Transition in a Bistable Phenalenyl-Based Neutral Radical Molecular Conductor

The ability to tune the physical properties of bistable organic functional materials by means of chemistry can facilitate their development for molecular electronic switching components. The butylamine-containing biphenalenyl boron neutral radical, [Bu]₂ B, crystalline compound has recently attracted significant attention by displaying a hysteretic phase transition accompanied by simultaneous bistability in magnetic, electrical, and optical properties close to room temperature. In this report, substitutional doping was applied to [Bu]₂ B by crystallizing solid solutions of bistable [Bu]₂ B and its non-radical-containing counterpart [Bu]₂ Be. With increasing doping degree, the hysteretic phase transition is gradually suppressed in terms of reducing the height, but conserves the width of the hysteresis loop as observed through magnetic susceptibility and electrical conductivity measurements. At the critical doping level of about 6 %, the abrupt transformation of the crystal structure to that of the pure [Bu]₂ Be crystal packing was observed, accompanied by a complete collapse of the hysteresis loop. Further study of the structure-properties relationships of bistable neutral radical conductors based on the [Bu]₂ B host can be conducted utilizing a variety of biphenalenyl-based molecular conductors.

Experimental and Computational Evidence for "Double Pancake Bonds": The Role of Dispersion-Corrected DFT Methods in Strongly Dimerized 5-Aryl-1λ2,3λ2-dithia-2,4,6-triazines

Crystal structures are reported for bicyclic 3-CF₃C₆H₄CN₅S₃ and monocyclic 3-CF₃C₆H₄CN₃S₂, the latter of which is strongly dimerized in a cis-cofacial geometry [3-CF₃C₆H₄CN₃S₂]₂. The title compounds have previously been characterized in solution by NMR, displaying spectra that are consistent with the structure of [3-CF₃C₆H₄CN₃S₂]₂ in the crystal with anti-oriented CF₃ substituents. The interannular binding was investigated using density functional theory (DFT) methods. However, the DFT-optimized geometry spreads the aryl rings too far apart (centroid-centroid distances of ≥4.353 Å versus experimental distance of 3.850 Å). Significant improvements are obtained with dispersion-corrected DFT functionals B3LYP-D3, B3LYP-D3BJ, M062X, and APFD using the 6-311+G(2d,p) basis set. However, all of these overbind the aryl rings with centroid-centroid distances of 3.612, 3.570, 3.526, and 3.511 Å, respectively. After selecting B3LYP-D3BJ/6-311+G(2d,p) as the best method, five alternative dimer geometries were tested, and all were found to be binding; however, anti cofacial-4 (matching the structure in the solid state) is the most stable. Computed energies of the remainder are as follows: +7.0 kJ mol^-1 (syn-cofacial-5), +26.7 kJ mol^-1 (anti-cofacial-64), +27.0 kJ mol^-1 (syn-cofacial-150), +102.0 kJ mol^-1 (S,S-antarafacial), and +103.7 kJ mol^-1 (S,N-antarafacial), where the suffixes are torsional angles around the CN₃S₂ thiazyl ring centroids. The binding in the four most stable cofacial dimers may be described by "double pancake bonding".

Synthesis, Characterization, and Functionalization of 1-Boraphenalenes

1-Boraphenalenes have been synthesized by reaction of BBr3 with 1-(aryl-ethynyl)naphthalenes, 1-ethynylnaphthalene, and 1-(pent-1-yn-1-yl)naphthalene and they can be selectively functionalized at boron or carbon to form bench-stable products. All of these 1-boraphenalenes have LUMOs localized on the planar C12 B core that are closely comparable in character to isoelectronic phenalenyl cations. In contrast to the comparable LUMOs, the aromatic stabilization of the C5 B ring in 1-boraphenalenes is dramatically lower than the C6 rings in phenalenyl cations. This is due to the occupied orbitals of π symmetry being less delocalised in the 1-boraphenalenes.

Tuning the Chemical Hardness of Boron Nitride Nanosheets by Doping Carbon for Enhanced Adsorption Capacity

The chemical hardness of adsorbents is an important physicochemical property in the process of adsorption based on the hard and soft acids and bases (HSAB) theory. Tuning chemical hardness of adsorbents modulated by their concomitants is a promising approach to enhance the adsorptive capacity in principle. In the present work, we report an efficient strategy that the adsorption capacity for aromatic sulfocompounds can be enhanced by tuning the chemical hardness. This strategy is first theoretically explored by introducing C element into the network of hexagonal boron nitride (h-BN) based on a series of model materials (model_xC, x = 1-5). Computational results show that the chemical hardness is reduced after gradually C-doping, which may lead to an enhancement of adsorption capacity according to the HSAB theory. Then, a series of C-doped h-BN materials (BCN-x, x = 10-50) were controlled synthesized. All of the as-prepared materials show better adsorption capacities (e.g., 27.43 mg g^-1 for BCN-50) than pure h-BN. Experiment results show that the adsorption capacity correlates well with the C content in the BCN-x, which is consistent with the results predicted by theoretical calculation. This strategy may be helpful to rationally design highly efficient adsorbents in separation engineering and may be expanded to similar two-dimensional materials, where the π-π interaction is the dominant driven force.

Mechanism of mechanically induced optoelectronic and spintronic phase transitions in 1D graphene spirals: insight into the role of interlayer coupling

Graphene spirals (GSs), an emerging carbonic nano-material with a Riemann surface, demonstrate extraordinary topological electronic signatures: interlayer coupling similar to van der Waals (vdW) heterojunctions and intralayer coupling within the spiral conformation. Based on the state-of-the-art first-principles technique, the electronic properties of the periphery-modified GSs with geometry deformation are explored under axial strain. For all GSs, there emerges a remarkable phase transition from metal to semiconductor, due to the attenuation of interlayer "σ-bonds" reducing the interlayer tunneling probability for carriers. Analogous to graphene, GSs consist of bipartite sublattices with carbonic sp² hybridization as well. Once the balance of the bipartite sublattices is lost, there will emerge intense edge (corner) states, contributed by the p_z orbitals. In contrast to isolated graphene nanoflakes, GSs realize the continuous spin-polarized edge (corner) state coupling with 1D morphology. However, the spin-polarization is blocked by the robust interlayer "σ-bonds" so that the spintronic transition takes place until this interlayer coupling is broken. More intriguingly, an indirect-direct bandgap transition is observed, revealing excellent optical on-off features. Their tunable properties provide great potential for their application in optoelectronics, spintronics and chemical or biological sensors.

Validation of density functionals for pancake-bonded π-dimers; dispersion is not enough

π-Stacking pancake bonding between radicals poses special challenges to density functional theories (DFTs) due to their shorter than van der Waals contact distances, their multireference singlet ground states and the concurrently important dispersion interactions.

The metallic state in neutral radical conductors: dimensionality, pressure and multiple orbital effects

Pressure-induced changes in the solid-state structures and transport properties of three oxobenzene-bridged bisdithiazolyl radicals 2 (R = H, F, Ph) over the range 0-15 GPa are described. All three materials experience compression of their π-stacked architecture, be it (i) 1D ABABAB π-stack (R = Ph), (ii) quasi-1D slipped π-stack (R = H), or (iii) 2D brick-wall π-stack (R = F). While R = H undergoes two structural phase transitions, neither of R = F, Ph display any phase change. All three radicals order as spin-canted antiferromagnets, but spin-canted ordering is lost at pressures <1.5 GPa. At room temperature, their electrical conductivity increases rapidly with pressure, and the thermal activation energy for conduction Eact is eliminated at pressures ranging from ∼3 GPa for R = F to ∼12 GPa for R = Ph, heralding formation of a highly correlated (or bad) metallic state. For R = F, H the pressure-induced Mott insulator to metal conversion has been tracked by measurements of optical conductivity at ambient temperature and electrical resistivity at low temperature. For R = F compression to 6.2 GPa leads to a quasiquadratic temperature dependence of the resistivity over the range 5-300 K, consistent with formation of a 2D Fermi liquid state. DFT band structure calculations suggest that the ease of metallization of these radicals can be ascribed to their multiorbital character. Mixing and overlap of SOMO- and LUMO-based bands affords an increased kinetic energy stabilization of the metallic state relative to a single SOMO-based band system.

Nitrogen Doping Enables Covalent-Like π-π Bonding between Graphenes

The neighboring layers in bilayer (and few-layer) graphenes of both AA and AB stacking motifs are known to be separated at a distance corresponding to van der Waals (vdW) interactions. In this Letter, we present for the first time a new aspect of graphene chemistry in terms of a special chemical bonding between the giant graphene "molecules". Through rigorous theoretical calculations, we demonstrate that the N-doped graphenes (NGPs) with various doping levels can form an unusual two-dimensional (2D) π-π bonding in bilayer NGPs bringing the neighboring NGPs to significantly reduced interlayer separations. The interlayer binding energies can be enhanced by up to 50% compared to the pristine graphene bilayers that are characterized by only vdW interactions. Such an unusual chemical bonding arises from the π-π overlap across the vdW gap while the individual layers maintain their in-plane π-conjugation and are accordingly planar. The existence of the resulting interlayer covalent-like bonding is corroborated by electronic structure calculations and crystal orbital overlap population (COOP) analyses. In NGP-based graphite with the optimal doping level, the NGP layers are uniformly stacked and the 3D bulk exhibits metallic characteristics both in the in-plane and along the stacking directions.

Band Structure Engineering by Substitutional Doping in Solid-State Solutions of [5-Me-PLY(O,O)]2B(1-x)Be(x) Radical Crystals

We report the substitutional doping of solid-state spiro-bis(5-methyl-1,9-oxido-phenalenyl)boron radical ([2]2B) by co-crystallization of this radical with the corresponding spiro-bis(5-methyl-1,9-oxido-phenalenyl)beryllium compound ([2]2Be). The pure compounds crystallize in different space groups ([2]2B, P1̅, Z = 2; [2]2Be, P2₁/c, Z = 4) with distinct packing arrangements, yet we are able to isolate crystals of composition [2]2B(1-x)Be(x), where x = 0-0.59. The phase transition from the P1̅ to the P2₁/c space group occurs at x = 0.1, but the conductivities of the solid solutions are enhanced and the activation energies reduced for values of x = 0-0.25. The molecular packing is driven by the relative concentration of the spin-bearing ([2]2B) and spin-free ([2]2Be) molecules in the crystals, and the extended Hückel theory band structures show that the progressive incorporation of spin-free [2]2Be in the lattice of the [2]2B radical (overall bandwidth, W = 1.4 eV, in the pure compound) leads to very strong narrowing of the bandwidth, which reaches a minimum at [2]2Be (W = 0.3 eV). The results provide a graphic picture of the structural transformations undergone by the lattice, and at certain compositions we are able to identify distinct structures for the [2]2B and [2]2Be molecules in a single crystalline phase.

Concave or convex π-dimers: the role of the pancake bond in substituted phenalenyl radical dimers

π-stacking phenalenyl radical dimers are overwhelmingly convex (a) and not concave (b) due to electron sharing at the SOMO centers.