MoS2 Enhanced T-Phase Stabilization and Tunability Through Alloying

Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.

Metallic Metastable Hybrid 1T'/1T Phase Triggered Co,PSnS2 Nanosheets for High Efficiency Trifunctional Electrocatalyst

The development of trifunctional electrocatalyst for oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER) with deeply understanding the mechanism to enhance the electrochemical performance is still a challenging task. In this work, the distorted metastable hybrid-phase induced 1T'/1T Co,PSnS₂ nanosheets on carbon cloth (1T'/1T Co,PSnS₂ @CC) is prepared and examined. The density functional theoretical (DFT) calculation suggests that the distorted 1T'/1T Co,PSnS₂ can provide excellent conductivity and strong hydrogen adsorption ability. The electronic structure tuning and enhancement mechanism of electrochemical performance are investigated and discussed. The optimal 1T'/1T Co,PSnS₂ @CC catalyst exhibits low overpotential of ≈94 and 219.7 mV at 10 mA cm^-2 for HER and OER, respectively. Remarkably, the catalyst exhibits exceptional ORR activity with small onset potential value (≈0.94 V) and half-wave potential (≈0.87 V). Most significantly, the 1T'/1T Co,PSnS₂ ||Co,PSnS₂ electrolyzer required small cell voltages of ≈1.53, 1.70, and 1.82 V at 10, 100, and 400 mA cm^-2 , respectively, which are better than those of state-of-the-art Pt-C||RuO₂ (≈1.56 and 1.84 V at 10 and 100 mA cm^-2 ). The present study suggests a new approach for the preparation of large-scalable, high performance hierarchical 3D next-generation trifunctional electrocatalysts.

Giant tunneling magnetoresistance in two-dimensional magnetic tunnel junctions based on double transition metal MXene ScCr2C2F2

Two-dimensional (2D) transition metal carbides (MXenes) with intrinsic magnetism and half-metallic features show great promising applications for spintronic and magnetic devices, for instance, achieving perfect spin-filtering in van der Waals (vdW) magnetic tunnel junctions (MTJs). Herein, combining density functional theory calculations and nonequilibrium Green's function simulations, we systematically investigated the spin-dependent transport properties of 2D double transition metal MXene ScCr₂C₂F₂-based vdW MTJs, where ScCr₂C₂F₂ acts as the spin-filter tunnel barriers, 1T-MoS₂ acts as the electrode and 2H-MoS₂ as the tunnel barrier. We found that the spin-up electrons in the parallel configuration state play a decisive role in the transmission behavior. We found that all the constructed MTJs could hold large tunnel magnetoresistance (TMR) ratios over 9 × 10⁵%. Especially, the maximum giant TMR ratio of 6.95 × 10⁶% can be found in the vdW MTJ with trilayer 2H-MoS₂ as the tunnel barrier. These results indicate the potential for spintronic applications of vdW MTJs based on 2D double transition metal MXene ScCr₂C₂F₂.

Equilibrium phase diagrams of isostructural and heterostructural two-dimensional alloys from first principles

Alloying is a successful strategy for tuning the phases and properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). To accelerate the synthesis of TMDC alloys, we present a method for generating temperature-composition equilibrium phase diagrams by combining first-principles total-energy calculations with thermodynamic solution models. This method is applied to three representative 2D TMDC alloys: an isostructural alloy, MoS_2(1-x)Te_2x , and two heterostructural alloys, Mo_1-x W _x Te₂ and WS_2(1-x)Te_2x . Using density-functional theory and special quasi-random structures, we show that the mixing enthalpy of these binary alloys can be reliably represented using a sub-regular solution model fitted to the total energies of relatively few compositions. The cubic sub-regular solution model captures 3-body effects that are important in TMDC alloys. By comparing phase diagrams generated with this method to those calculated with previous methods, we demonstrate that this method can be used to rapidly design phase diagrams of TMDC alloys and related 2D materials.

Stability and Bandgap Engineering of In1-xGaxSe Monolayer

Bandgap engineering of semiconductor materials represents a crucial step for their employment in optoelectronics and photonics. It offers the opportunity to tailor their electronic and optical properties, increasing the degree of freedom in designing new devices and widening the range of their possible applications. Here, we report the bandgap engineering of a layered InSe monolayer, a superior electronic and optical material, by substituting In atoms with Ga atoms. We developed a theoretical understanding of In1−xGaxSe stability and electronic properties in its whole compositional range (x=0−1) through first-principles density functional theory calculations, the cluster expansion method, and kinetic Monte Carlo simulations. Our findings highlight the possibility of modulating the InGaSe bandgap by ≈0.41 eV and reveal that this compound is an excellent candidate to be employed in many optoelectronic and photonic devices.

A pathway toward high-throughput quantum Monte Carlo simulations for alloys: A case study of two-dimensional (2D) GaSxSe1-x

The study of alloys using computational methods has been a difficult task due to the usually unknown stoichiometry and local atomic ordering of the different structures experimentally. In order to combat this, first-principles methods have been coupled with statistical methods such as the cluster expansion formalism in order to construct the energy hull diagram, which helps to determine if an alloyed structure can exist in nature. Traditionally, density functional theory (DFT) has been used in such workflows. In this paper, we propose to use chemically accurate many-body variational Monte Carlo (VMC) and diffusion Monte Carlo (DMC) methods to construct the energy hull diagram of an alloy system due to the fact that such methods have a weaker dependence on the starting wavefunction and density functional, scale similarly to DFT with the number of electrons, and have had demonstrated success for a variety of materials. To carry out these simulations in a high-throughput manner, we propose a method called Jastrow sharing, which involves recycling the optimized Jastrow parameters between alloys with different stoichiometries. We show that this eliminates the need for extra VMC Jastrow optimization calculations and results in significant computational cost savings (on average 1/4 savings of total computational time). Since it is a novel post-transition metal chalcogenide alloy series that has been synthesized in its few-layer form, we used monolayer GaS_xSe_1-x as a case study for our workflow. By extensively testing our Jastrow sharing procedure for monolayer GaS_xSe_1-x and quantifying the cost savings, we demonstrate how a pathway toward chemically accurate high-throughput simulations of alloys can be achieved using many-body VMC and DMC methods.

Phase Engineering of Transition Metal Dichalcogenides via a Thermodynamically Designed Gas-Solid Reaction

Polymorph conversion of transition metal dichalcogenides (TMDs) offers intriguing material phenomena that can be applied for tuning the intrinsic properties of 2D materials. In general, group VIB TMDs can have thermodynamically stable 2H phases and metastable 1T/T' phases. Herein, we report key principles to apply carbon monoxide (CO)-based gas-solid reactions for a universal polymorph conversion of group VIB TMDs without forming undesirable compounds. We found that the process conditions are strongly dependent on the reaction chemical potential of cations in the TMDs, which can be predicted by thermodynamic calculations, and that polymorphic conversion is triggered by S vacancy (V_S) formation. Furthermore, we conducted DFT calculations for the reaction barriers of V_S formation and S diffusion to reveal the polymorph conversion mechanism of WS₂ and compared it with that of MoS₂. We believe that phase engineering 2D materials via thermodynamically designed gas-solid reactions could be functionally used to achieve defect-related nanomaterials.

Nature of optical excitations and bandgap of RexMo1-xS2alloy at nanoscale probed from high resolution low loss electron energy loss spectroscopy

The two-dimensional (2D) transitional metal dichalcogenides (TMDS) have become an intensive research topic recently. The alloys of these TMDs have offered continuous tunability of the bandstructure and carrier concentration, providing a new opportunity for various device applications. Here the rich variations in optical excitations in Re_xMo_1-xS₂alloy at the nanoscale region are shown. The alloy bandgap and charge response are probed by low-loss high-resolution transmission electron energy loss spectroscopy (HR-EELS). Concurrent density functional theory calculations revealed many electronic structures from n-type semiconductors to metallic and p-type semiconducting nature with band bowing effect. The alloying-induced Peierls distortion leads to a change in crystal symmetry and decreased interlayer coupling. These alloys undergo indirect to direct bandgap transition with the function of Re concentration. These unique correlated structural and electronic properties of these 2D alloys can be potentially applicable for various electronic and optoelectronic devices.

Metal chalcogenides for neuromorphic computing: emerging materials and mechanisms

The approaching end of Moore's law scaling has significantly accelerated multiple fields of research including neuromorphic-, quantum-, and photonic computing, each of which possesses unique benefits unobtained through conventional binary computers. One of the most compelling arguments for neuromorphic computing systems is power consumption, noting that computations made in the human brain are approximately 10⁶times more efficient than conventional CMOS logic. This review article focuses on the materials science and physical mechanisms found in metal chalcogenides that are currently being explored for use in neuromorphic applications. We begin by reviewing the key biological signal generation and transduction mechanisms within neuronal components of mammalian brains and subsequently compare with observed experimental measurements in chalcogenides. With robustness and energy efficiency in mind, we will focus on short-range mechanisms such as structural phase changes and correlated electron systems that can be driven by low-energy stimuli, such as temperature or electric field. We aim to highlight fundamental materials research and existing gaps that need to be overcome to enable further integration or advancement of metal chalcogenides for neuromorphic systems.

Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin-film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom-up methods that grow doped samples on substrates directly and top-down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next-generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.

Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications

Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.

Single Transition Metal Atom Bound to the Unconventional Phase of the MoS2 Monolayer for Catalytic Oxygen Reduction Reaction: A First-Principles Study

Supported single-atom catalysts (SACs) have received a lot of attention due to their super-high atom utilization and outstanding catalytic performance. However, the instability of the supported transition-metal (TM) atoms hampers their widespread applications. Exploration of an appropriate substrate to stabilize the supported single atom is crucial for the future implementation of SACs. In recent years, two-dimensional materials have been proposed as possible substrates due to their large specific surface areas, but their chemically inert surfaces are difficult to stabilize TM atoms without defecting or doping. Herein, by means of systematic first-principles calculations, we demonstrate that the defect-free MoS₂ monolayer in the unconventional phase (1T') can effectively immobilize single TM atoms owing to its unique electrophilic property as compared to the conventional 2H phase. As a prototype probe, we investigated oxygen reduction reaction (ORR) catalyzed by a total of 21 single TM atoms stabilized on 1T'-MoS₂ and successfully screened out two candidates, Cu and Pd@1T'-MoS₂, which have a low overpotential of 0.41 and 0.32 V respectively, outperforming most of the previously reported ORR catalysts. Furthermore, we reveal that the adsorption energy of the ORR intermediate, *OH, provides an excellent descriptor to assess the ORR activity, which is further determined by the d-band center of the supported TM adatoms, thus being a great advantage for future design of stable and high-performance SACs.

Seamlessly Splicing Metallic Sn x Mo1- x S2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor

Accurate design of the 2D metal-semiconductor (M-S) heterostructure via the covalent combination of appropriate metallic and semiconducting materials is urgently needed for fabricating high-performance nanodevices and enhancing catalytic performance. Hence, the lateral epitaxial growth of M-S Sn x Mo1- x S2/MoS2 heterostructure is precisely prepared with in situ growth of metallic Sn x Mo1- x S2 by doping Sn atoms at semiconductor MoS2 edge via one-step chemical vapor deposition. The atomically sharp interface of this heterostructure exhibits clearly distinguished performance based on a series of characterizations. The oxygen evolution photoelectrocatalytic performance of the epitaxial M-S heterostructure is 2.5 times higher than that of pure MoS2 in microreactor, attributed to the efficient electron-hole separation and rapid charge transfer. This growth method provides a general strategy for fabricating seamless M-S lateral heterostructures by controllable doping heteroatoms. The M-S heterostructures show increased carrier migration rate and eliminated Fermi level pinning effect, contributing to their potential in devices and catalytic system.

Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials

Physical and electronic asymmetry plays a crucial role in rectifiers and other devices with a directionally variant current-voltage (I-V) ratio. Several strategies for practically creating asymmetry in nanoscale components have been demonstrated, but complex fabrication procedures, high cost, and incomplete mechanistic understanding have significantly limited large-scale applications of these components. In this work, we present density functional theory calculations which demonstrate asymmetric electronic properties in a metal-semiconductor-metal (MSM) interface composed of stacked van der Waals (vdW) heterostructures. Janus MoSSe has an intrinsic dipole due to its asymmetric structure and, consequently, can act as either an n-type or p-type diode depending on the face at the interior of the stacked structure (SeMoS-SMoS vs. SMoSe-SMoS). In each configuration, vdW forces dominate the interfacial interactions, and thus, Fermi level pinning is largely suppressed. Our transport calculations show that not only does the intrinsic dipole cause asymmetric I-V characteristics in the MSM structure but also that different transmission mechanisms are involved across the S-S (direct tunneling) and S-Se interface (thermionic excitation). This work illustrates a simple and practical method to introduce asymmetric Schottky barriers into an MSM structure and provides a conceptual framework which can be extended to other 2D Janus semiconductors.

Stabilization of metallic phases through formation of metallic/semiconducting lateral heterostructures

In this study, we develop a new approach for stabilization of metallic phases of monolayer MoS₂ through the formation of lateral heterostructures composed of semiconducting/metallic MoS₂. The structure of metallic (a mixture of T and T') and semiconducting (2H) phases was unambiguously characterized by Raman spectroscopy, x-ray photoelectron spectroscopy, photoluminescence imaging, and transmission electron microscope observations. The amount of NaCl, reaction temperature, reaction time, and locations of substrates are essential for controlling the percentage of metallic/semiconducting phases in lateral heterostructures; loading a large amount of NaCl at low temperatures with short reaction times prefers metallic phases. The existence of the semiconducting phase in MoS₂ lateral heterostructures significantly enhances the stability of the metallic phases through passivation of reactive edges. The same approach can be applied to other transition metal dichalcogenides (TMDs), such as WS₂, leading to boosting of basic research and application of TMDs in metallic phases.

Quasi-Binary Transition Metal Dichalcogenide Alloys: Thermodynamic Stability Prediction, Scalable Synthesis, and Application

Transition metal dichalcogenide (TMDCs) alloys could have a wide range of physical and chemical properties, ranging from charge density waves to superconductivity and electrochemical activities. While many exciting behaviors of unary TMDCs have been demonstrated, the vast compositional space of TMDC alloys has remained largely unexplored due to the lack of understanding regarding their stability when accommodating different cations or chalcogens in a single-phase. Here, a theory-guided synthesis approach is reported to achieve unexplored quasi-binary TMDC alloys through computationally predicted stability maps. Equilibrium temperature-composition phase diagrams using first-principles calculations are generated to identify the stability of 25 quasi-binary TMDC alloys, including some involving non-isovalent cations and are verified experimentally through the synthesis of a subset of 12 predicted alloys using a scalable chemical vapor transport method. It is demonstrated that the synthesized alloys can be exfoliated into 2D structures, and some of them exhibit: i) outstanding thermal stability tested up to 1230 K, ii) exceptionally high electrochemical activity for the CO₂ reduction reaction in a kinetically limited regime with near zero overpotential for CO formation, iii) excellent energy efficiency in a high rate Li-air battery, and iv) high break-down current density for interconnect applications. This framework can be extended to accelerate the discovery of other TMDC alloys for various applications.

Controlled Pore Generation in Single-Layer Graphene Oxide for Membrane Desalination

Nanoporous graphene was proposed as an efficient material for reverse osmosis water desalination membranes because it allows water molecules to pass at high flux while rejecting hydrated salt ions. Nevertheless, from an experimental point of view it is still difficult to control the pore size. A scalable method to generate pores is urgently required for the diffusion of this technology. We propose, by theoretical calculations, an innovative and scalable strategy to better control the dimension of the pores in graphene-based membranes by reduction of single-layer graphene oxide (GO). The latter is first annealed at a controlled mild temperature to induce the aggregation of its randomly distributed oxygen-containing functional groups into small nanometric clusters. The layer then undergoes a high-temperature reducing treatment that causes the desorption of the functional groups along with carbon removal only in the oxidized areas, producing subnanometric pores while leaving unchanged the remaining pristine graphene areas.

Material-Selective Doping of 2D TMDC through AlxOy Encapsulation

For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with high-performance electronic systems, one of the greatest challenges is the realization of doping and comprehension of its mechanisms. Low-temperature atomic layer deposition of aluminum oxide is found to n-dope MoS₂ and ReS₂ but not WS₂. Based on electrical, optical, and chemical analyses, we propose and validate a hypothesis to explain the doping mechanism. Doping is ascribed to donor states in the band gap of Al_xO_y, which donate electrons or not, based on the alignment of the electronic bands of the 2D TMDC. Through systematic experimental characterization, incorporation of impurities (e.g., carbon) is identified as the likely cause of such states. By modulating the carbon concentration in the capping oxide, doping can be controlled. Through systematic and comprehensive experimental analysis, this study correlates, for the first time, 2D TMDC doping to the carbon incorporation on dielectric encapsulation layers. We highlight the possibility to engineer dopant layers to control the material selectivity and doping concentration in 2D TMDC.

Tailoring the optical properties of MoS2 and WS2 single layers via organic functionalization

Tailoring the structural and electronic properties of 2D materials is fundamental to boost their use in a wide range of technological applications. In this paper, by means of first principles simulations, we show how methyl functionalization of MoS₂ and WS₂ monolayers can be employed to change their energy gap, tune their optoelectronic properties and modify the relative stability of their structural phases (or polytypes). In particular for both compound monolayers, we find that the most stable semiconducting H phase becomes metallic upon methyl functionalization, while in the metastable T' phase the band gap increases as a function of the -CH₃ coverage; correspondingly the phase stability is reversed and the on-set of the optical absorption is blue-shifted.

In pursuit of barrierless transition metal dichalcogenides lateral heterojunctions

There is an increasing need to understand interfaces between two-dimensional materials to realize an energy efficient boundary with low contact resistance and small heat dissipation. In this respect, we investigated the impact of charge and substitutional atom doping on the electronic transport properties of the hybrid metallic-semiconducting lateral junctions, formed between metallic (1T and 1T _d ) and semiconducting (1H) phases of MoS₂ by means of first-principles and non-equilibrium Green function formalism based calculations. Our results clearly revealed the strong influence of the type of interface and crystallographic orientation of the metallic phase on the transport properties of these systems. The Schottky barrier height, which is the dominant mechanism for contact resistance, was found to be as large as 0.63 eV and 1.19 eV for holes and electrons, respectively. We found that armchair interfaces are more conductive as compared to zigzag termination due to the presence of the metallic Mo zigzag chains that are directed along the transport direction. In order to manipulate these barrier heights we investigated the influence of electron doping of the metallic part (i.e. 1T _d -MoS₂). We observed that the Fermi level of the hybrid system moves towards the conduction band of semiconducting 1H-MoS₂ due to filling of 4d-orbital of metallic MoS₂, and thus the Schottky barrier for electrons decreases considerably. Besides electron doping, we also investigated the effect of substitutional doping of metallic MoS₂ by replacing Mo atoms with either Re or Ta. Due to its valency, Re (Ta) behaves as a donor (acceptor) and reduces the Schottky barrier for electrons (holes). Since Re and Ta based transition metal dichalcogenides crystallize in either the 1T _d or 1T phase, substitutional doping with these atom favors the stabilization of the 1T _d phase of MoS₂. Co-doping of hybrid structure results in an electronic structure, which facilities easy dissociation of excitons created in the 1H part.

Structural stability of coplanar 1T-2H superlattice MoS2 under high energy electron beam

Coplanar heterojunctions composed of van der Waals layered materials with different structural polymorphs have drawn immense interest recently due to low contact resistance and high carrier injection rate owing to low Schottky barrier height. Present research has largely focused on efficient exfoliation of these layered materials and their restacking to achieve better performances. We present here a microwave assisted easy, fast and efficient route to induce high concentration of metallic 1T phase in the original 2H matrix of exfoliated MoS₂ layers and thus facilitating the formation of a 1T-2H coplanar superlattice phase. High resolution transmission electron microscopy (HRTEM) investigations reveal formation of highly crystalline 1T-2H hybridized structure with sharp interface and disclose the evidence of surface ripplocations within the same exfoliated layer of MoS₂. In this work, the structural stability of 1T-2H superlattice phase during HRTEM measurements under an electron beam of energy 300 keV is reported. This structural stability could be either associated to the change in electronic configuration due to induction of the restacked hybridized phase with 1T- and 2H-regions or to the formation of the surface ripplocations. Surface ripplocations can act as an additional source of scattering centers to the electron beam and also it is possible that a pulse train of propagating ripplocations can sweep out the defects via interaction from specific areas of MoS₂ sheets.

High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics

Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS₂:Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS₂ measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS₂ crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS₂ has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS₂ and WS₂.

Semiconductor-metal structural phase transformation in MoTe2 monolayers by electronic excitation

Optical modulation of the crystal structure and materials properties is an increasingly important technique for functionalization of two-dimensional and layered semiconductors, where traditional methods like chemical doping are ineffective. Controllable transformation between the semiconducting (H) and semimetallic (T') polytypes of transition metal chalcogenide monolayers is of central importance to two-dimensional electronics, and thermally-driven and strain-driven examples of this phase transformation have been previously reported. However, the possibility of a H-T' phase transformation driven by electronic or optical excitation is less explored and little is known about the potential energy surface and the magnitude of activation barriers or the mechanism of the phase transformation in the excited state. Here, we model the electronic and ionic structure of excited MoTe₂ crystals and demonstrate how electronic excitation leads to a Fermi-surface-nesting driven softening of phonon modes at the Brillouin zone boundary and the subsequent stabilization of a low-energy intermediate crystal structure along the semiconductor-metal phase transition pathway. The significantly reduced barriers for this transformation upon electronic excitation suggest that optical excitation may enable rapid and controllable synthesis of lateral semiconductor-metal heterophase homojunctions in monolayer materials for use in next-generation two-dimensional nano-electronics applications.