A Honeycomb BeN2 Sheet with a Desirable Direct Band Gap and High Carrier Mobility

Effect of bending deformation on the electronic and optical properties of O atoms adsorbed by Be3N2

CONTEXT

In this paper, the optimum coverage of 4.44% and the optimum adsorption sites were determined for the Be3N2 adsorption system of O atoms at different coverages based on density functional theory. The electronic and optical properties of the model were investigated by applying bending deformation to the model at these coverage and adsorption sites. Adsorption of O atoms disrupts the geometrical symmetry of Be3N2, resulting in orbital rehybridization and lowering its band gap. Bending deformation causes the band gap of the adsorbed O atom structure of Be3N2 to first increase and then decrease, resulting in the modulation of its band gap. With increasing bending deformation, the adsorbed system is redshifts, and the degree of redshift increases with increasing bending deformation.

METHODS

All calculations in this paper were performed using the first-principles-based CASTEP module of Materials Studio (MS). The generalized gradient approximation (GGA) plane-wave pseudopotential method and the Perdew-Burke-Ernzerhof (PBE) Perdew et al. Phys Rev Lett 77:3865, 1996 generalized functional were used in the geometry optimization and calculation process to calculate the exchange-correlation potential between electrons. The effect of coverage on the electronic and optical properties of the Be3N2-adsorbed O atom system was investigated by adsorbing different numbers of O atoms on a monolayer of Be3N2. The Be3N2 protocell contains two N atoms and three Be atoms with a space community of P6/MMM (No.191). The original cell was expanded 3 times along the direction of the base vectors a and b in the Be3N2 plane to create a 3 × 3 × 1 monolayer Be3N2 supercell system. A vacuum layer of 15 Å is set in the direction of the crystal plane of the vertical monolayer Be3N2 supercell to eliminate interactions between adjacent layers. In the overall energy convergence test of the Be3N2 supercell, the plane wave truncation energy was set to 500 eV, and the energy difference between the calculations given in the literature Reyes-Serrato et al. J Phys Chem Solids 59:743-6, 1998 using 550 eV was less than 0.01 eV, verifying the reliability of the data at a truncation energy of 500 eV. The Monkhorst-Pack special k-point sampling method Monkhorst et al. Phys Rev B 13:5188, 1976 was used in the structural calculations, and the grid was set to 3 × 3 × 1. The geometric optimization parameters are set as follows: the self-consistent field iteration convergence criterion is 2.0 × 10-6 eV, and the iterative accuracy convergence value is not less than 1.0 × 10-5 eV/atom for the total force of each atom and less than 0.03 eV/Å for all atomic forces. In addition the high-symmetry k-point path is taken as Γ(0,0,0) → M(0,0.5,0) → K(- 1/3,2/3,0) → Γ(0,0,0) Chen et al, AIP Adv 8:105105, 2018.

Computational Discovery of High-Temperature Ferromagnetic Semiconductor Monolayer H-MnN2

In the past few years, two-dimensional (2D) high-temperature ferromagnetic semiconductor (FMS) materials with novelty and excellent properties have attracted much attention due to their potential in spintronics applications. In this work, using first-principles calculations, we predict that the H-MnN2 monolayer with the H-MoS2-type structure is a stable intrinsic FMS with an indirect band gap of 0.79 eV and a high Curie temperature (Tc) of 380 K. The monolayer also has a considerable in-plane magnetic anisotropy energy (IMAE) of 1005.70 μeV/atom, including a magnetic shape anisotropy energy induced by the dipole-dipole interaction (shape-MAE) of 168.37 μeV/atom and a magnetic crystalline anisotropy energy resulting from spin-orbit coupling (SOC-MAE) of 837.33 μeV/atom. Further, based on the second-order perturbation theory, its in-plane SOC-MAE of 837.33 μeV/atom is revealed to mainly derive from the couplings of Mn-dxz,dyz and Mn-dx2-y2,dxy orbitals through Lz in the same spin channel. In addition, the biaxial strain and carrier doping can effectively tune the monolayer's magnetic and electronic properties. Such as, under the hole and few electrons doping, the transition from semiconductor to half-metal can be realized, and its Tc can go up to 520 and 620 K under 5% tensile strain and 0.3 hole doping, respectively. Therefore, our research will provide a new, promising 2D FMS for spintronics devices.

Photovoltaic properties of new solar cell based on ideal cubic NaNbO3 thin films: a combined experimental and density functional theory study

We explore the photovoltaic properties of a novel homojunction solar cell based on NNO(p)/NNO(n) perovskite by employing a combination of material synthesis, characterization and density functional theory calculations that are novel ideas compared to those previously reported in the literature. The band structure reveals that NaNbO3 introduces a n-type semiconductor. Moreover, using DFT calculation, we created n-NNO by a simple substitution in the O site by 4.16% fluorine atoms. Experimental and DFT calculation reveals that NNO perovskite exhibits a direct bandgap of ∼1.6 eV, with a slightly larger two other direct bandgaps of ∼2.13 and 3.24 eV. After extracting the necessary parameters, an electrical modelization of an n-NNO/p-NNO solar cell is performed by Maple software revealed that the cell conversion efficiency can reach 17% which presents a first path to identify a new solar cell based only on perovskite material.

High switching ratio and inorganic gas sensing performance in BeN4based nanodevice: a first-principles study

Recently, Dirac material BeN₄has been synthesized by using laser-heated diamond anvil-groove technology (Bykovet al2021Phys. Rev. Lett.126175501). BeN₄layer, i.e. beryllonitrene, represents a qualitatively class of two-dimensional (2D) materials that can be built of a metal atom and polymeric nitrogen chains, and hosts anisotropic Dirac fermions. Enlighten by this discovered material, we study the electronic structure, anisotropic transport properties and gas sensitivity of 2D BeN₄using the density functional theory combined with non-equilibrium Green's function method. The results manifest that the 2D BeN₄shows a typical semi-metallic property. The electronic transport properties of the intrinsic BeN₄devices show a strong anisotropic behavior since electrons transmitting along the armchair direction is much easier than that along the zigzag direction. It directly results in an obvious switching characteristic with the switching ratio up to 10⁵. Then the adsorption characteristics indicate that H₂S, CO, CO₂and H₂molecules are physisorption, while the NH₃, NO, NO₂, SO₂molecules are chemisorption. Among these chemisorption cases, the 2D gas sensor devices show an extremely high response for SO₂recognition, and the high anisotropy of the original 2D BeN₄device still maintains after adsorbing gas molecules. Finally, high switching ratio and inorganic gas sensing performance of BeN₄monolayer could be clearly understood with local density of states, bias-dependent spectra, scattered state distribution. In general, the results indicate that the designed BeN₄devices have potential practical application in high-ratio switching devices and high gas-sensing molecular devices.

Novel boron nitride MXenes as promising energy storage materials

MXenes are promising materials for rechargeable metal ion batteries and supercapacitors due to their high energy storage capacities, high electrical and ionic conductivities, and ease of synthesis. In this study, we predict the structure and properties of hitherto unexplored Ti-boron nitride MXenes (Ti₃BN and Ti₃BNT₂ where T = F, O, OH) using high-throughput density functional theory calculations. We identify multiple stable structures exhibiting high thermodynamic and mechanical stability with B and N atoms evenly dispersed in the lattice sites. The predicted properties of the BN MXenes show remarkable similarities to their carbide counterparts, including in their metallicity, elastic constants, and cation absorption properties. Significantly, these novel MXene compounds display high lithium storage capacities (>250 mA h g^-1), as well as suitability for non-lithium ion storage (Na, K, Ca, Mg), making them attractive candidates for both batteries and supercapacitors. This class of MXenes therefore merits further theoretical and experimental investigation.

FeP2 monolayer: isoelectronic analogue of MoS2 with excellent electronic and optical properties

Two-dimensional semiconductors with suitable indirect band gaps, excellent light absorption capacity, and oxidation resistance are particularly suitable for material applications. Here based on first-principle calculations, we report that the FeP₂ monolayer, which is isoelectronic with MoS₂, has novel electronic properties and an ultra-low diffusion energy barrier of K on the surface, indicating its potential as an anode material of K-ion batteries. The calculated phonon dispersion curves, molecular dynamics, and elastic constants showed that it has high structural stability and oxidation resistance. The monolayer was a semiconductor with an indirect band gap of 0.68 eV. In addition, the FeP₂ monolayer had obvious light absorption in the infrared, visible, and ultraviolet regions, which can be widely used in optoelectronic devices. Bonding analysis showed that there were multicenter bonds inside every hexagonal ring. As the anode material of K-ion batteries, the FeP₂ monolayer had a capacity of 456.84 mA h g^-1, low diffusion energy barrier, and open-circuit voltage. All these characteristics suggest that the FeP₂ monolayer is a potential anode material for K-ion batteries, which needs to be further verified by experiments.

Engineering 2D Materials for Photocatalytic Water-Splitting from a Theoretical Perspective

Splitting of water with the help of photocatalysts has gained a strong interest in the scientific community for producing clean energy, thus requiring novel semiconductor materials to achieve high-yield hydrogen production. The emergence of 2D nanoscale materials with remarkable electronic and optical properties has received much attention in this field. Owing to the recent developments in high-end computation and advanced electronic structure theories, first principles studies offer powerful tools to screen photocatalytic systems reliably and efficiently. This review is organized to highlight the essential properties of 2D photocatalysts and the recent advances in the theoretical engineering of 2D materials for the improvement in photocatalytic overall water-splitting. The advancement in the strategies including (i) single-atom catalysts, (ii) defect engineering, (iii) strain engineering, (iv) Janus structures, (v) type-II heterostructures (vi) Z-scheme heterostructures (vii) multilayer configurations (viii) edge-modification in nanoribbons and (ix) the effect of pH in overall water-splitting are summarized to improve the existing problems for a photocatalytic catalytic reaction such as overcoming large overpotential to trigger the water-splitting reactions without using cocatalysts. This review could serve as a bridge between theoretical and experimental research on next-generation 2D photocatalysts.

2D XBiSe3(X = Ga, In, Tl) monolayers with high carrier mobility and enhanced visible-light absorption

The geometrical configurations of the XBiSe₃ (X = Ga, In, Tl) monolayers are identified by employing the first-principles density functional theory calculations, and the stabilities are confirmed by phonon dispersion, formation energy, and ab initio molecular dynamics simulation, respectively. The bandgap and band edges, the density of states, the optical absorption, mobility, and effect of strain engineering are evaluated to understand the photoelectronic properties of the monolayers. The results show that the XBiSe₃ monolayers have the indirect bandgaps of 1.14-1.69 (1.20-1.84) eV by HSE06(GW), leading to the enhanced optical absorption from the visible to near-ultraviolet region. The large mobility of the electron and hole are also observed, which is helpful for the separation and transfer of the photogenerated carrier pair. The band edges and bandgaps, as well as the optical absorptions, can effectively be tuned by strain engineering. It should be noted that the band edges of the InBiSe₃ monolayer could satisfy the condition of redox potential for the hydrogen evolution reaction under the compressive strain heavier than -3%, implicating this monolayer can also be used for photocatalytic water splitting to produce hydrogen. Therefore, these monolayers have potential applications in photocatalytic materials or photoelectronic devices such as energy harvesters and visible-light sensors.

B2S3monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Atomically two-dimensional materials with direct band-gap and high carrier mobility are highly desirable due to their promising applications in electronic devices. Here, on the basis ofab initiocalculations and global particle-swarm optimization method, we predict the B₂S₃monolayer as a new semiconductor with favorable functional properties. The B₂S₃monolayer possesses a high electron mobility of 553 cm²V^-1s^-1and a direct band-gap of 1.85 eV. The direct band-gap can be manipulated under biaxial strain. Furthermore, B₂S₃monolayer can absorb sunlight efficiently in the entire range of the visible light spectrum. Besides, this monolayer holds good dynamical, thermal, and mechanical stabilities. All the desired properties render B₂S₃monolayer a promising candidate for future applications in high-speed (opto)electronic devices.

Theoretical assessments on the interaction between amino acids and the g-Mg3N2 monolayer: dispersion corrected DFT and DFT-MD simulations

The interaction of a few amino acids (AAs) with the graphene-like magnesium nitride (g-Mg₃N₂) monolayer has been investigated with density functional theory (DFT) simulations. The Mg site was found to cause significant attraction with the polar active sites of AAs. Such AAs, are capable of producing electrostatics bonding with -48.012 (kcal mol^-1) of interaction energy for tyrosine. The good consistency of the DFT interaction energy with the second-order Møller-Plesset method was found. Furthermore, the DFT-MD simulation of the tyrosine/g-Mg₃N₂ system demonstrated that this host-guest system is stable at ambient conditions. The electronic structures and quantum molecular descriptors were calculated, and the results revealed that the g-Mg₃N₂ monolayer is sensitive to the interaction with AAs. Our first-principles outcomes suggest comprehensive visions into the functionalization of g-Mg₃N₂, and anticipate its applicability as an unprecedented nanovector for AAs. In addition, g-Mg₃N₂ nanosheets can be utilized as biosensors for biomolecules detection. These are very hopeful for promising biological and pharmaceutical applications of g-Mg₃N₂.

High-Pressure Synthesis of Dirac Materials: Layered van der Waals Bonded BeN_{4} Polymorph

High-pressure chemistry is known to inspire the creation of unexpected new classes of compounds with exceptional properties. Here, we employ the laser-heated diamond anvil cell technique for synthesis of a Dirac material BeN_{4}. A triclinic phase of beryllium tetranitride tr-BeN_{4} was synthesized from elements at ∼85  GPa. Upon decompression to ambient conditions, it transforms into a compound with atomic-thick BeN_{4} layers interconnected via weak van der Waals bonds and consisting of polyacetylene-like nitrogen chains with conjugated π systems and Be atoms in square-planar coordination. Theoretical calculations for a single BeN_{4} layer show that its electronic lattice is described by a slightly distorted honeycomb structure reminiscent of the graphene lattice and the presence of Dirac points in the electronic band structure at the Fermi level. The BeN_{4} layer, i.e., beryllonitrene, represents a qualitatively new class of 2D materials that can be built of a metal atom and polymeric nitrogen chains and host anisotropic Dirac fermions.

2D-VN2 MXene as a novel anode material for Li, Na and K ion batteries: Insights from the first-principles calculations

Developing two-dimensional (2D) materials as anode materials have been proved a promising approach to significantly improve the charge storage performances of alkali metal ion. Herein, we investigate mono-layered VN₂ as an anode material in Li, Na and K ion batteries. Firstly, the high stability of 2D-VN₂ has been demonstrated via calculating the phonon spectra. 2D-VN₂ is capable of delivering high capacities of 678.8, 339.4 and 1357.6 mAh g^-1 in Li⁺, K⁺ and Na⁺ storage, respectively. In addition, the metallic properties and corresponding high electrical conductivity and low diffusion barriers of 201.1 meV for Li atoms, 34.7 meV for K atoms and 84.1 meV for Na atoms on VN₂ surface, indicating good capacity and the superior rate performances of alkali metal atoms migration on VN₂. The calculated average voltage of Li, Na and K are respectively 0.81 V, 0.29 V and 0.77 V, suggesting a promising voltage behavior compared with other 2D materials.

Ferromagnetic TM2BC (TM = Cr, Mn) monolayers for spintronic devices with high Curie temperature

Transition metal boro-carbide (TM2BC) structures crystallize in the layered orthorhombic structure in their bulk phases. In this study, however, we find that TM2BC (TM = Cr, Mn) prefer a tetragonal (t) crystal structure in their monolayer phases due to the occurrence of strong sp2 bonds between the metal and B/C atoms instead of sp3 + sp2 bonds which exist in the orthorhombic phase. The calculated energy difference between the orthorhombic and the tetragonal structures based on density functional theory (DFT) is more than 1 eV per unit cell. In addition, t-Cr2BC and t-Mn2BC monolayers are dynamically and thermally stable with their magnetic metal electronic structures. For further investigations, we combine our DFT calculations with the Monte Carlo simulations and find that both t-TM2BC monolayers show ferromagnetic properties. The calculated Curie temperatures are 846 K and 128 K for t-Cr2BC and t-MnBC sheets, respectively. In addition, we examine the magnetic anisotropy energies (MAE) of t-TM2BC monolayers and find that both structures prefer out-of-plane as the easy axis magnetization direction and the applied electric field can easily modulate the MAE of the monolayers. Our theoretical calculations reveal that t-TM2BC (TM = Cr, Mn) sheets have great potential for the future design of controllable spintronic devices with their tunable MAE properties.

Two-dimensional Ga2O2 monolayer with tunable band gap and high hole mobility

By means of density functional theory and unbiased structure search computations, we systematically investigated the stability and electronic properties of a new Ga2O2 monolayer. The phonon spectra and ab initio molecular dynamics simulations show that the Ga2O2 monolayer is dynamically and thermally stable. Moreover, it also shows superior open-air stability. In particular, the Ga2O2 monolayer is an indirect semiconductor with a wide band gap of 2.752 eV and high hole mobility of 4720 cm2 V-1 s-1. Its band gap can be tuned flexibly in a large range by applied strain and layer control. It exhibits high absorption coefficients (>105 cm-1) in the ultraviolet region. The combined novel electronic properties of the Ga2O2 monolayer imply that it is a highly promising material for future applications in electronics and optoelectronics.

Theoretical investigation on [Formula: see text] monolayer for an efficient bifunctional water splitting catalyst

The search for an active, stable, and abundant semiconductor-based bifunctional catalysts for solar hydrogen production will make a substantial impact on the sustainable development of the society that does not rely on fossil reserves. The photocatalytic water splitting mechanism on a [Formula: see text] monolayer has here been investigated by using state-of-the-art density functional theory calculations. For all possible reaction intermediates, the calculated changes in Gibbs free energy showed that the oxygen evolution reaction will occur at, and above, the potential of 2.06 V (against the NHE) as all elementary steps are exergonic. In the case of the hydrogen evolution reaction, a potential of 0.52 V, or above, was required to make the reaction take place spontaneously. Interestingly, the calculated valence band edge and conduction band edge positions for a [Formula: see text] monolayer are located at the potential of 2.60 V and 0.56 V, respectively. This indicates that the photo-generated holes in the valence band can oxidize water to oxygen, and the photo-generated electrons in the conduction band can spontaneously reduce water to hydrogen. Hence, the results from the present theoretical investigation show that the [Formula: see text] monolayer is an efficient bifunctional water-splitting catalyst, without the need for any co-catalyst.

Beryllene: A Promising Anode Material for Na- and K-Ion Batteries with Ultrafast Charge/Discharge and High Specific Capacity

We predict two-dimensional Be materials, α- and β-beryllene. In α-beryllene each Be atom binds to six other Be atoms in a planar scheme, whereas β-beryllene consists of two stacked α-beryllene monolayers. Both α- and β-beryllene are found to be highly stable, as demonstrated by high cohesive energies close to that of bulk Be, an absence of imaginary phonon modes, and high melting points. Both materials are metallic, indicating potential applications in Na-ion and K-ion batteries, which are explored in detail. The diffusion barriers of Na (K) on α- and β-beryllene are found to be only 9 (3) and 4 (5) meV, respectively. In particular, the diffusion barrier of K on α-beryllene exhibits the lowest ever recorded value in two-dimensional materials, suggesting the possibility of ultrafast charge/discharge. As the theoretical specific capacities of Na/K on α- and β-beryllene are found to be 1487/1322 and 743/743 mA h g^-1, respectively, the storage capacity is ultrahigh.

Prediction of staggered stacking 2D BeP semiconductor with unique anisotropic electronic properties

By comprehensive structure design and first-principles calculations, we report a novel two-dimensional (2D) BeP nanomaterial with exotic structural and properties. This BeP 2D material is formed by a couple honeycomb sheets by slab staggered stacking and strong interlayer bondings. It behaves as a natural 2D semiconductor with several notable properties: a modest bandgap (~1.34 eV), high room-temperature electron mobility (~10⁴ cm² V^-1 s^-1) and high visible-light absorption coefficient (~10⁵ cm^-1); Moreover, due to the unique stacking topology, BeP may display distinctive direction-dependent electric transport by the anisotropic polarity of electron and hole mobilities, that is, it exhibits n-type (electron mobility  >  hole mobility) along the armchair direction while acts as p -type (hole mobility  >  electron mobility) in the zigzag direction, thus promising for applications in nanoelectronics. The BeP has good dynamic and thermal stabilities and is also the lowest-energy structure of 2D space indicated by particle swarm search, implying the high feasibility of experimental synthesis.

2D BeP2 monolayer: investigation of electronic and optical properties by driven modulated strain

Recently, the two-dimensional (2D) material beryllium diphosphide (BeP₂) has attracted significant attention for potential device applications due to its Dirac semimetal state, dynamic and thermal stability, and high carrier mobility. In this work, we investigated its electronic and optical properties under biaxial Lagrangian strain using density functional theory (DFT). Electronic band gaps and effective charge carrier mass were highly sensitive to the Lagrangian strain of BeP₂ monolayer. The bandgaps of BeP₂ varied from 0 eV to 0.30 eV for 2% to 8% strain, where the strain range is based on the final stable condition of the system. The absorption spectra for the dielectric properties show the highest absorption peaks in the infrared (IR) region. These abundant strain-dependent studies of the BeP₂ monolayer provide guidelines for its application in infrared sensors and devices.

BeP₂ monolayer is a promising material for the novel IR optical device.

Electronic properties and oxygen reduction reaction catalytic activity of h-BeN2 and MgN2 by first-principles calculations

Currently, identifying suitable oxygen reduction reaction (ORR) catalysts in novel two-dimensional (2D) materials has attracted more and more research attention. Here, we have studied the catalytic activities of 2D h-BeN₂ and MgN₂ monolayers for ORR by using first-principles calculations. The calculated results reveal that the direct quasiparticle bandgap of BeN₂ monolayer is 3.32 eV, and the indirect bandgap of MgN₂ is 3.42 eV. 2D h-BeN₂ and MgN₂ exhibit high exciton binding energies of 1.07 and 0.83 eV respectively, and their optical properties are determined by bound exciton transitions due to the strong quantum confinement effects. Importantly, h-BeN₂ and MgN₂ monolayers with positive-charged (+1.6 e) metal atom (Be/Mg) on the surface exhibit excellent adsorption ability for O₂ and ORR intermediates, and show better CO tolerance than Pt(111). The calculated free energy plots are always downhill for ORR catalyzed by BeN₂ in both acid and alkaline environments, and by MgN₂ in alkaline environments. The detailed reaction mechanism analyses show that high-efficient four-electron pathway is the optimal pathway for ORR catalyzed by BeN₂ in acid environments. Surprisingly, there is a low overpotential of 0.45 eV for ORR catalyzed by BeN₂ in the acid solution and no overpotential in the alkaline solution. Our studies found for the first time that 2D h-BeN₂ shows huge potential as a non-precious metal ORR catalyst in acid and alkaline environments.

A BN analog of two-dimensional triphenylene-graphdiyne: stability and properties

Motivated by the feasibility of hybridizing C- and BN-units as well as the recent synthesis of a triphenylene-graphdiyne (TpG) monolayer, for the first time we explore the stability and electronic band structure of the Tp-BNyne monolayer composed of C-chains and the BN analog of triphenylene (Tp-BNyne) by using density functional theory. We find that the single layer Tp-BNyne is stable and exhibits a semiconducting character with a direct band gap of 3.78 eV. The band gap of Tp-BNyne can be flexibly tuned in a wide range by applying uniaxial straining in different directions, or by changing the length of the carbon chain, or by stacking in multilayers with different configurations, while the feature of a direct band gap can be well maintained. These intriguing characteristics endow the Tp-BNyne monolayer with additional advantages over the pristine TpG monolayer, which would stimulate more effort on the design and synthesis of novel 2D materials with high stability, tunable porosity, and controllable functionality for nanoelectronic and optoelectronic applications.

A theoretical study of several fully hydrogenated borophenes

Several recently synthesized two dimensional borophene monolayers are almost all metallic with a strong anisotropic character, but their structural instability and the need to explore their novel physical properties are still ongoing issues. We present a detailed study of four fully hydrogenated borophenes (β12, δ3, δ5 and α borophanes) by first-principles calculations. According to phonon dispersion relations and ab initio molecular dynamics simulations, δ3 and δ5 borophanes are dynamically and thermally stable. The structural, mechanical, and electronic properties of δ3 and δ5 borophanes are analyzed. The results indicate that charge transfer from B to H atoms is crucial for the stability of two borophane phases. The HSE06 calculations predict that both δ3 and δ5 borophanes are semiconductors with indirect band gaps of 1.51 and 1.99 eV, respectively. These findings indicate that δ3 and δ5 borophanes are ideal for applications in nanoelectronics.

Tetragonal and trigonal Mo2B2 monolayers: two new low-dimensional materials for Li-ion and Na-ion batteries

In this study, we report two new Mo₂B₂ monolayers and investigate their stabilities, electronic structures, lattice dynamics, and properties as anode materials for energy storage by using the crystal structure prediction technique and first-principles method.

2D planar penta-MN2 (M = Pd, Pt) sheets identified through structure search

Planar penta-MN₂ sheets are energetically more stable than pyrite MN₂, and penta-PtN₂ has higher carrier mobility than phosphorene.

Physical Properties and Photovoltaic Application of Semiconducting Pd₂Se₃ Monolayer

Palladium selenides have attracted considerable attention because of their intriguing properties and wide applications. Motivated by the successful synthesis of Pd₂Se₃ monolayer (Lin et al., Phys. Rev. Lett., 2017, 119, 016101), here we systematically study its physical properties and device applications using state-of-the-art first principles calculations. We demonstrate that the Pd₂Se₃ monolayer has a desirable quasi-direct band gap (1.39 eV) for light absorption, a high electron mobility (140.4 cm²V^-1s^-1) and strong optical absorption (~10⁵ cm^-1) in the visible solar spectrum, showing a great potential for absorber material in ultrathin photovoltaic devices. Furthermore, its bandgap can be tuned by applying biaxial strain, changing from indirect to direct. Equally important, replacing Se with S results in a stable Pd₂S₃ monolayer that can form a type-II heterostructure with the Pd₂Se₃ monolayer by vertically stacking them together. The power conversion efficiency (PCE) of the heterostructure-based solar cell reaches 20%, higher than that of MoS₂/MoSe₂ solar cell. Our study would motivate experimental efforts in achieving Pd₂Se₃ monolayer-based heterostructures for new efficient photovoltaic devices.

A New Anisotropic Dirac Cone Material: A B2S Honeycomb Monolayer

Different from the isotropic Dirac cones existing in other two-dimensional (2D) materials, anisotropic Dirac cones have the merit of anisotropic carrier mobility for applications in direction-dependent quantum devices. Motivated by the recent experimental finding of an anisotropic Dirac cone in borophene, here we report a new 2D anisotropic Dirac cone material, B₂S monolayer, identified by using a global structure search method and first-principles calculation combined with a tight-binding model. The B₂S monolayer is found to be stable mechanically, thermally, and dynamically and exhibits an anisotropic Dirac cone exactly at the Fermi level, showing a Fermi velocity of 10⁶ m/s in the same order of magnitude as that of graphene. Moreover, B₂S monolayer is the first anisotropy Dirac cone material with a pristine honeycomb structure stabilized by S in free-standing conditions where each atom has four valence electrons on average being isoelectronic to C. This study would expand the Dirac cone material family with new features.

2D carbon sheets with negative Gaussian curvature assembled from pentagonal carbon nanoflakes

Despite the good progress made in materials fabrication, it remains a big challenge to synthesize 2D sheets by assembling nanoflakes that are usually produced in experiments, and few theoretical studies have explored this topic. Based on the recent experimental synthesis of pentagonal graphene nanoflakes and the novel properties of penta-graphene, we report a series of 2D assembled carbon allotropes (CG568-80, CG568-180 and CG568-320) that have the following unusual properties: different from most other 2D carbon allotropes, the assembled carbon sheets have negative Gaussian curvatures, and exhibit ultra-softness and better chemical reactivity due to the curvature-induced misalignment of π-orbitals as compared with pristine graphene; all three studied carbon sheets are highly stable with binding energies comparable to those of phagraphene and ψ-graphene, and are semiconductors with tunable band gaps, displaying size-dependent carrier mobilities: ∼105 cm2 V-1 s-1 (CG568-80 and CG568-320) and ∼104 cm2 V-1 s-1 (CG568-180). These features indicate that assembling nanoflakes can effectively tune the structural morphology and properties to expand the family of 2D carbon materials for future applications.

Ultrathin Semiconducting Bi2Te2S and Bi2Te2Se with High Electron Mobilities

High carrier mobility and moderate band gap are two key properties of electronic device applications. Two ultrathin two-dimensional (2D) semiconductors, namely, Bi₂Te₂S and Bi₂Te₂Se nanosheets, with novel electronic and optical properties are predicted based on first-principles calculations. The Bi₂Te₂S and Bi₂Te₂Se monolayers own moderate band gaps (∼0.7 eV) and high electron mobilities (∼20 000 cm² V^-1 s^-1), and they can absorb sunlight efficiently through the whole incident solar spectrum. Meanwhile, layer-dependent exponential decay band gaps are also unveiled. The relatively low interlayer binding energies suggest that these monolayers can be easily exfoliated from bulk structures. Their high dynamical and thermal stabilities are further verified by phonon dispersion calculations and ab initio molecular dynamics simulations. The exceptional properties render Bi₂Te₂X (X = S, Se) monolayers promising candidates in future high-speed (opto)electronic devices.

An enhanced power factor via multilayer growth of Ag-doped skutterudite CoSb3 thin films

The Seebeck coefficient and electrical conductivity of the CoSb₃ thin films are enhanced after Ag doping, leading to substantial enhancement of the power factor.

A CO monolayer: first-principles design of a new direct band-gap semiconductor with excellent mechanical properties

Group V monolayers, e.g., nitrogene, phosphorene, arsenene, and antimonene have recently emerged as attractive candidates for electronic and optoelectronic applications. However, these pristine monolayers are not able to possess direct band gaps suitable for ultraviolet-blue photoresponse. First-principles calculations show that the Pmma-CO monolayer has a direct band gap of 2.4 eV, and predict that the system has a good stability. Unlike an easy direct-indirect gap transition under small strains in phosphorene, the direct band gap feature of Pmma-CO is maintained under a strain up to 12%. Surprisingly, Pmma-CO shows excellent mechanical stability with an anisotropic in-plane stiffness up to 475.7 N m^-1 along the b direction, which is higher than that of graphene. The in-plane hole carrier mobility is predicted to be 746.42 cm² V^-1 s^-1, similar to that of black phosphorene. When synthesized, the Pmma-CO monolayer may have great potential in the design of new ultraviolet/blue optoelectronic devices.

Computational mining of photocatalysts for water splitting hydrogen production: two-dimensional InSe-family monolayers

The InSe-family monolayers exhibit high electron mobility, small exciton binding energy, and distinguished optical responses under visible-light irradiation.

N-Functionalized MXenes: ultrahigh carrier mobility and multifunctional properties

Two dimensional (2D) nanomaterials have demonstrated huge potential in wide applications from nanodevices to energy harvesting/storage.

Ti3BN monolayer: the MXene-like material predicted by first-principles calculations

An MXene-like Ti₃BN monolayer whose electronic properties could be modulated has been predicted following the strategy of “atomic transmutation”.

A graphene-like Mg3N2monolayer: high stability, desirable direct band gap and promising carrier mobility

A novel two-dimensional material, g-Mg₃N₂, exhibits an intrinsic direct band gap of 1.86 eV, outstanding stability (2000 K) and a high carrier mobility of up to 10³cm²V⁻¹s⁻¹which is larger than that of MoS₂and close to that of few-layer phosphorene.