Enhancing Hybrid Perovskite Detectability in the Deep Ultraviolet Region with Down-Conversion Dual-Phase (CsPbBr3-Cs4PbBr6) Films

Nonradiative Energy Transfer Enables a hv < Eg Response of Perovskite Quantum Dots in Si-Based Inorganic-Organic Hybrid Solar Cells

High performance is a crucial factor in seeking a more competitive levelized cost of electricity for the extensive popularization of c-Si solar cells. Here, CsPbBr3 quantum dots (QDs) have been first applied as the light-converting layer to enhance the full-spectrum light response, resulting in an ∼71% enhancement of power conversion efficiency within silicon-based solar cells. Remarkably, even if the photon energy is smaller than the bandgap of CsPbBr3 QDs, the long-wavelength external quantum efficiency shows a significant increase. Such surprising results can be attributed to the nonradiative energy transfer (NRET) mechanism of CsPbBr3 QDs, which can transfer long-wavelength-generated dipoles into the Si base with the assistance of a Coulomb force. Furthermore, a dipole-transferring model, which considers that the Al2O3 passivation layer would play a negative role in the NRET process, is creatively but supportively proposed. These results highlight a simple, low-cost but promising strategy to improve the performance of c-Si solar cells.

Highly Wavelength-Selective Self-Powered Solar-Blind Ultraviolet Photodetector Based on Colloidal Aluminum Nitride Quantum Dots

Colloidal quantum dots are semiconductor nanocrystals endowed with unique optoelectronic properties. A major challenge to the field is the lack of methods for synthesizing quantum dots exhibit strong photo-response in the deep-ultraviolet (DUV) band. Here, a facile solution-processed method is presented for synthesizing ultrawide bandgap aluminium nitride quantum dots (AlN QDs) showing distinguished UV-B photoluminescence. Combined with the strong optical response in solar blind band, a solution-processed, self-powered AlN-QDs/β-Ga2O3 solar-blind photodetector is demonstrated. The photodetector is characterized with a high responsivity of 1.6 mA W-1 under 0 V bias and specific detectivity 7.60 × 10-11 Jones under 5 V bias voltage with good solar blind selectivity. Given the solution-processed capability of the devices and extraordinary properties of AlN QDs, this study anticipates the utilization of AlN QDs will open up unique opportunities for cost-effective industrial production of high-performance DUV optoelectronics for large-scale applications.

Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector

In this study, a highly crystalline and transparent indium-tin-oxide (ITO) thin film was prepared on a quartz substrate via RF sputtering to fabricate an efficient bottom-to-top illuminated electrode for an ultraviolet C (UVC) photodetector. Accordingly, the 26.6 nm thick ITO thin film, which was deposited using the sputtering method followed by post-annealing treatment, exhibited good transparency to deep-UV spectra (67% at a wavelength of 254 nm), along with high electrical conductivity (11.3 S/cm). Under 254 nm UVC illumination, the lead-halide-perovskite-based photodetector developed on the prepared ITO electrode in a vertical structure exhibited an excellent on/off ratio of 1.05 × 104, a superb responsivity of 250.98 mA/W, and a high specific detectivity of 4.71 × 1012 Jones without external energy consumption. This study indicates that post-annealed ITO ultrathin films can be used as electrodes that satisfy both the electrical conductivity and deep-UV transparency requirements for high-performance bottom-illuminated optoelectronic devices, particularly for use in UVC photodetectors.

Go beyond the limit: Rationally designed mixed-dimensional perovskite/semiconductor heterostructures and their applications

Halide perovskite heterojunctions rationally integrate the chemical and physical properties of multi-dimensional perovskites and judiciously chosen semiconductor materials, offering the promise of going beyond the limit of a single component. This emerging platform of materials innovation offers fresh opportunities to tune material properties, discover interesting phenomena, and enable novel applications. In this review, we first discuss the fundamentals of forming heterojunctions with perovskites and a wide range of semiconductors, and then we give an overview of the research progress of halide perovskite heterojunctions in terms of their optical, electrical, and mechanical properties, focusing on how the heterojunction tunes the energy band structure, electrical transport, and charge recombination behaviors. We further outline the progress of perovskite-based heterojunctions in optoelectronics. Finally, the challenges and future research directions for perovskite/semiconductor heterojunctions are discussed.

High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3 Sandwich Structure

The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga₂O₃, Au electrodes, and the MAPbBr₃ perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga₂O₃/Au/MAPbBr₃ SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W^-1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal-semiconductor-metal (MSM) structure MAPbBr₃ PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga₂O₃ and MAPbBr₃, which gives the β-Ga₂O₃/Au/MAPbBr₃ SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV-visible region.

Recent advances in self-powered and flexible UVC photodetectors

Ultraviolet-C (UVC) radiation is employed in various applications, including irreplaceable applications in military and civil fields, such as missile guidance, flame detection, partial discharge detection, disinfection, and wireless communication. Although most modern electronics are based on Si, UVC detection technology remains a unique exception because the short wavelength of UV radiation makes efficient detection with Si difficult. In this review, recent challenges in obtaining ideal UVC photodetectors with various materials and various forms are introduced. An ideal photodetector must satisfy the following requirements: high sensitivity, fast response speed, high on/off photocurrent ratio, good regional selectivity, outstanding reproducibility, and superior thermal and photo stabilities. UVC detection is still in its infancy compared to the detection of UVA as well as other photon spectra, and recent research has focused on different key components, including the configuration, material, and substrate, to acquire battery-free, super-sensitive, ultra-stable, ultra-small, and portable UVC photodetectors. We introduce and discuss the strategies for fabricating self-powered UVC photodetectors on flexible substrates in terms of the structure, material, and direction of incoming radiation. We also explain the physical mechanisms of self-powered devices with various architectures. Finally, we present a brief outlook that discusses the challenges and future strategies for deep-UVC photodetectors.

A Study on UVC Photodetector Using Mixed-Cation Perovskite with High Detection Rate as Light-Absorption Layer

In this study, a mixed-cation perovskite ultraviolet (UV) C photodetector was fabricated using a simple formamidinium iodide (FAI) post-treatment process. The fabricated device uses FA_xMA_1−xPbI₃ perovskite as a light-absorption layer and SnO₂, which has high transmittance in the UVC wavelength region, as an electron-transport layer. The fabricated device exhibited a response of 50.8 mA/W, detectability of 4.47 × 10¹³ Jones, and external quantum efficiency of 53%. Therefore, the approach used in this study is promising for many applications in the UVC wavelength region.

A Study to Improve the Performance of Mixed Cation-Halide Perovskite-Based UVC Photodetectors

Photodetectors convert optical signals into electrical signals and demonstrate application potential in various fields, such as optical communication, image detection, environmental monitoring, and optoelectronics. In this study, a mixed cation-halide perovskite-based ultraviolet C photodetector was fabricated using a solution process. The higher the mobility of the perovskite carrier, which is one of the factors affecting the performance of electronic power devices, the better the carrier diffusion. The on/off ratio and responsivity indicate the sensitivity of the response, and together with the detectivity and external quantum efficiency, these parameters demonstrate the performance of the detector. The detector fabricated in this study exhibited a mobility of 202.2 cm2/Vs and a high on/off ratio of 105% at a -2 V bias, under 254 nm light irradiation with an intensity of 0.6 mW/cm2. The responsivity, detectivity, and external quantum efficiency of the as-fabricated detector were 5.07 mA/W, 5.49 × 1011 Jones, and 24.8%, respectively. These findings demonstrate that the solution process employed in this study is suitable for the fabrication of mixed cation-halide perovskites which show immense potential for use as photodetectors.

Fabrication Strategies and Optoelectronic Applications of Perovskite Heterostructures

Metal halide perovskites (MHPs) are emerging low‐cost and multifunctional semiconductor materials. They have been widely used in optoelectronic devices such as perovskite solar cells, light‐emitting diodes, photodetectors, memristors, and lasers. Developing new MHPs, defects passivation, optimizing device structures, and packaging techniques are all effective methods to improve photoelectric performance and stability of perovskite devices. Particularly, the fabrication of perovskite/perovskite heterostructures (PPHSs) is a novel and arresting method to obtain stable and high‐performing optoelectronic perovskite devices since it can passivate defects, regulate energy gaps, and provide new carrier transmission modes of MHPs for multiple semiconductor applications. In this paper, representative fabrication strategies of PPHSs including films and single‐crystal heterostructures are reviewed, and their applications in optoelectronic devices are summarized. Furthermore, the challenges and prospects of PPHSs are discussed based on the current status.

All-inorganic perovskite quantum dots-based electrospun polyacrylonitrile fiber for ultra-sensitive trace-recording

All-inorganic dual-phase CsPbBr₃-Cs₄PbBr₆quantum dots (CPB QDs)-based polyacrylonitrile (PAN) fiber synthesized by supersaturated recrystallization and electrospinning technique possesses characteristics of homogeneous morphology, high crystallinity and solution sensitivity. Under 365 nm laser excitation, CPB@PAN fiber exhibits surprising trace-recording capability attributing to the splash-enhanced fluorescence (FL) performance with a narrow-band emission at 477-515 nm. In the process of ethanol anhydrous (EA) and water splashing, the CPB@PAN fiber presents conspicuous blue and green emission when contacting with EA and water, and maintains intense blue and green FL for more than 4 months. These experimental and theoretical findings provide a facile technology for the development of biological protection display, biotic detection and moisture-proof forewarning based on the trace-recording performance of CPB@PAN fiber.

Practical Demonstration of Deep-Ultraviolet Detection with Wearable and Self-Powered Halide Perovskite-Based Photodetector

Flexible and self-powered photodetectors (PDs) have become one of the most popular topics, attracting researchers in the field of optoelectronic applications. In this study, for the first time, we demonstrate partial discharge detection in a practical environment with a prepared flexible device. Poly(vinylidene fluoride) (PVDF) is utilized as a highly transparent material in the UVC region, to create a flexible substrate with the antihumidity property. A detector that uses a mixed-halide perovskite (FAPbI₃)_1-x(MAPbBr₃)_x as the photoactive material is constructed in a vertical structure on the as-prepared hydrophobic PVDF substrate. The fabricated device exhibits good performance with a fast response speed (t_rise = 82 ms, t_fall = 64 ms) and a high detectivity of 7.21 × 10¹⁰ Jones at zero bias under 254 nm UV illumination, along with superior mechanical flexibility at various bending angles. Additionally, the air-exposure stability and reproducibility of the as-prepared device exhibit almost the original performance after 6 weeks of storage. For practical applications, we demonstrate a facile and sensitive detection for UVC leakage from a germicidal lamp and simulated a partial discharge system using our PD without energy consumption. These results indicate that this new approach may be useful and convenient for the detection of the partial discharge as well as for several practical applications.

Broadening the Spectral Response of Perovskite Photodetector to the Solar-Blind Ultraviolet Region through Phosphor Encapsulation

Hybrid perovskite photodetectors generally exhibit brilliant performance for photodetecting in the visible spectrum but poor detectability in the solar-blind ultraviolet (UV) region. To break through the bottleneck, we demonstrate a novel strategy to broaden the spectral response of perovskite photodetectors to the solar-blind UV region through phosphor encapsulation. The high photoluminescence quantum yield trichromatic phosphor capping layer achieves an extended spectral response to the solar-blind UV region through effectively down-converting the incident UV light into visible light. In addition, an external quantum efficiency of up to 12.13%@265 nm is achieved without bias voltage, while the initial value is near zero. The corresponding spectral responsivity and detectivity are 0.0269 A/W and 7.52 × 10¹¹ Jones, respectively. Thus, the photodetectors show a high photocurrent and on/off ratio, increasing by roughly 2 orders of magnitude. Moreover, the photodetectors exhibit a large linear dynamic range of 105 dB, fast response times of 50.16/51.99 μs, and excellent stability. The practical applications for flame detection and UV-based communication are further explored. This work provides a new way to achieve UV light detection based on perovskite photodetectors. Perhaps, it may also be a promising alternative for wide-band gap semiconductors to realize the urgent pursuit of UV detection.

Strong Polarized Photoluminescence CsPbBr3 Nanowire Composite Films for UV Spectral Conversion Polarization Photodetector Enhancement

In this work, we proposed a fluorescence conversion layer with polarization characteristics to enhance UV polarization detection for the first time. To achieve this goal, the colloidal lead halide CsPbBr₃ nanowires (NWs) with appropriate lengths were synthesized by the method of ultrasonication synthesis assisted by the addition of hydrobromic acid (HBr) ligands. By adding HBr, the properties of synthesized NWs are improved, and due to the controllable perovskite-stretched NWs, polymer composite films were fabricated, which can generate photoluminescence (PL) with strong polarization. The optimized stretched composite film can achieve a polarization degree of 0.42 and dichroism ratio (I_∥/I_⊥) of 2.49 at 520 nm. Based on this film, an imaging system with polarization-selective properties and efficient UV spectral conversion was developed. The spectrum conversion of 266 to 520 nm luminescence wavelength was realized and sensitive to the polarization of incoming 266 nm UV light. The experimental results also showed that the response after spectral conversion is greatly improved, and different responsivities can correspond to different polarization states. This imaging system overcomes the insufficiency of the conventional charge coupled device (CCD), which makes it difficult to receive the optical signal for high-quality UV imaging. The use of light conversion films with polarization characteristics for polarized UV imaging is of great significance for improving the detection of solar-blind UV bands and the recognition of military targets.

Study on Performance Improvements in Perovskite-Based Ultraviolet Sensors Prepared Using Toluene Antisolvent and CH3NH3Cl

In this study, a simply structured perovskite-based ultraviolet C (UVC) sensor was prepared using a one-step, low-temperature solution-processing coating method. The UVC sensor utilized CH3NH3PbBr3 perovskite as the light-absorbing layer. To improve the characteristics of CH3NH3PbBr3, an antisolvent process using toluene and the addition of CH3NH3Cl were introduced. The device with these modifications exhibited a response rise/fall time of 15.8/16.2 ms, mobility of 158.7 cm2/V·s, responsivity of 4.57 mA/W, detectivity of 1.02 × 1013 Jones, and external quantum efficiency of 22.32% under the 254-nm UV illumination. Therefore, this methodology could be a good approach in facilitating UVC detection.

Environment-Induced Reversible Modulation of Optical and Electronic Properties of Lead Halide Perovskites and Possible Applications to Sensor Development: A Review

Lead halide perovskites are currently widely investigated as active materials in photonic and optoelectronic devices. While the lack of long term stability actually limits their application to commercial devices, several experiments demonstrated that beyond the irreversible variation of the material properties due to degradation, several possibilities exist to reversibly modulate the perovskite characteristics by acting on the environmental conditions. These results clear the way to possible applications of lead halide perovskites to resistive and optical sensors. In this review we will describe the current state of the art of the comprehension of the environmental effects on the optical and electronic properties of lead halide perovskites, and of the exploitation of these results for the development of perovskite-based sensors.

Recent progress of zero-dimensional luminescent metal halides

This review provides in-depth insight into the structure–luminescence–application relationship of 0D all-inorganic/organic–inorganic hybrid metal halide luminescent materials.

Photon management to reduce energy loss in perovskite solar cells

Despite the rapid development of perovskite solar cells (PSCs) over the past few years, the conversion of solar energy into electricity is not efficient enough or cost-competitive yet. The principal energy loss in the conversion of solar energy to electricity fundamentally originates from the non-absorption of low-energy photons ascribed to Shockley-Queisser limits and thermalization losses of high-energy photons. Enhancing the light-harvesting efficiency of the perovskite photoactive layer by developing efficient photo management strategies with functional materials and arrays remains a long-standing challenge. Here, we briefly review the historical research trials and future research trends to overcome the fundamental loss mechanisms in PSCs, including upconversion, downconversion, scattering, tandem/graded structures, texturing, anti-reflection, and luminescent solar concentrators. We will deeply emphasize the availability and analyze the importance of a fine device structure, fluorescence efficiency, material proportion, and integration position for performance improvement. The unique energy level structure arising from the 4fn inner shell configuration of the trivalent rare-earth ions gives multifarious options for efficient light-harvesting by upconversion and downconversion. Tandem or graded PSCs by combining a series of subcells with varying bandgaps seek to rectify the spectral mismatch. Plasmonic nanostructures function as a secondary light source to augment the light-trapping within the perovskite layer and carrier transporting layer, enabling enhanced carrier generation. Texturing the interior using controllable micro/nanoarrays can realize light-matter interactions. Anti-reflective coatings on the top glass cover of the PSCs bring about better transmission and glare reduction. Photon concentration through perovskite-based luminescent solar concentrators offers a path to increase efficiency at reduced cost and plays a role in building-integrated photovoltaics. Distinct from other published reviews, we here systematically and hierarchically present all of the photon management strategies in PSCs by presenting the theoretical possibilities and summarizing the experimental results, expecting to inspire future research in the field of photovoltaics, phototransistors, photoelectrochemical sensors, photocatalysis, and especially light-emitting diodes. We further assess the overall possibilities of the strategies based on ultimate efficiency prospects, material requirements, and developmental outlook.

Fluorescence-enhanced Cs4 PbBr6 /CsPbBr3 composites films synthesized by double-films solid phase reaction method

Due to indispensable ligands, polluted organic solution, or complex vapour deposition, stable CsPbBr₃ film is hard to be prepared directly using a simple and environmentally friendly method. To improve the stability of CsPbBr₃ film and its synthesis methods, the double-films solid phase reaction was developed, and Cs₄ PbBr₆ /CsPbBr₃ composites were designed. Although the synthesized particle had a size of 2-5 μm, much larger than that of quantum dots, in ambient conditions the composites films still showed good photoluminescence properties, with the highest photoluminescence quantum yield of 80%. It had good stability against air, temperature and humidity, and even had interesting fluorescence-enhanced phenomenon after about 4 days.

Long-armed hexapod nanocrystals of cesium lead bromide

Colloidal lead halide perovskite nanocrystals (LHP NCs) assume a variety of morphologies (e.g. cubes, sheets, and wires). Their labile structural and surface characters allow them to undergo post-synthetic evolution of shape and crystallographic characters. Such transformations can be advantageous or deleterious, and it is therefore vital to both understand and exert control over these processes. In this study, we report novel long-armed hexapod structures of cesium lead bromide nanocrystals. These branched structures evolve from quantum-confined CsPbBr3 nanosheets to Cs4PbBr6 hexapods over a period of 24 hours. Time-resolved optical and structural characterization reveals a post-synthesis mechanism of phase transformation, oriented attachment and branch elongation. More generally, the study reveals important processes associated with LHP NC aging and demonstrates the utility of slow reaction kinetics in obtaining complex morphologies.

Inverse Growth of Large-Grain-Size and Stable Inorganic Perovskite Micronanowire Photodetectors

Control of forward and inverse reactions between perovskites and precursor materials is key to attaining high-quality perovskite materials. Many techniques focus on synthesizing nanostructured CsPbX₃ materials (e.g., nanowires) via a forward reaction (CsX + PbX₂ → CsPbX₃). However, low solubility of inorganic perovskites and complex phase transition make it difficult to realize the precise control of composition and length of nanowires using the conventional forward approach. Herein, we report the self-assembly inverse growth of CsPbBr₃ micronanowires (MWs) (CsPb₂Br₅ → CsPbBr₃ + PbBr₂↑) by controlling phase transition from CsPb₂Br₅ to CsPbBr₃. The two-dimensional (2D) structure of CsPb₂Br₅ serves as nucleation sites to induce initial CsPbBr₃ MW growth. Also, phase transition allows crystal rearrangement and slows down crystal growth, which facilitates the MW growth of CsPbBr₃ crystals along the 2D planes of CsPb₂Br₅. A CsPbBr₃ MW photodetector constructed based on the inverse growth shows a high responsivity of 6.44 A W^-1 and detectivity of ∼10¹² Jones. Large grain size, high crystallinity, and large thickness can effectively alleviate decomposition/degradation of perovskites, which leads to storage stability for over 60 days in humid environment (relative humidity = 45%) and operational stability for over 3000 min under illumination (wavelength = 400 nm, light intensity = 20.06 mW cm^-2).

Carbon electrode engineering for high efficiency all-inorganic perovskite solar cells

Carbon-based inorganic perovskite solar cells (PSCs) have demonstrated an excellent performance in the field of photovoltaics owing to their simple fabrication techniques, low-cost and superior stability. Despite the lower efficiency of devices with a carbon electrode compared with the conventional structure, the potential applications in large scale have attracted increasing attention. Herein, we employ a mixed carbon electrode inorganic PSC by incorporating one-dimensional structure carbon nanotubes (CNTs) and two-dimensional Ti3C2-MXene nanosheets into a commercial carbon paste. This mixed carbon electrode, which is different from the pure carbon electrode in showing a point-to-point contact, provides a network structure and multi-dimensional charge transfer path, which effectively increases the conductivity of the carbon electrode and carriers transport. A respectable power conversion efficiency of 7.09% is obtained through carbon/CNT/MXene mixed electrode in CsPbBr3-based solar cells.

Three-dimensional a-Si/a-Ge radial heterojunction near-infrared photovoltaic detector

In this work, three-dimensional (3D) radial heterojunction photodetectors (PD) were constructed over vertical crystalline Si nanowires (SiNWs), with stacked hydrogenated amorphous germanium (a-Ge:H)/a-Si:H thin film layer as absorbers. The hetero absorber layer is designed to benefit from the type-II band alignment at the a-Ge/a-Si hetero-interface, which could help to enable an automated photo-carrier separation without exterior power supply. By inserting a carefully controlled a-Si passivation layer between the a-Ge:H layer and the p-type SiNWs, we demonstrate first a convenient fabrication of a new hetero a-Ge/a-Si structure operating as self-powered photodetectors (PD) in the near-infrared (NIR) range up to 900 nm, indicating a potential to serve as low cost, flexible and high performance radial junction sensing units for NIR imaging and PD applications.

Light-activated inorganic CsPbBr2I perovskite for room-temperature self-powered chemical sensing

Halide perovskite materials are excellent light harvesters that have generated enormous interest for photovoltaic technology and an increasing number of other optoelectronic applications. Very recently, their use for miniaturized chemical sensors has shown a promising room-temperature response. Here, we present some insights on the use of CsPbBr2I (CPBI) perovskites for self-powered room-temperature sensing of several environmentally and medically relevant compounds demonstrating rapid detection of down to concentrations of 1 ppm. Notably, the photocurrent of these self-powered CPBI-based devices increases under exposure to both reducing (e.g. acetone, propane) and oxidizing (e.g. NO2, O2) gas molecules and decreases rapidly upon reverting to an inert atmosphere. In situ photoluminescence (PL) analysis of the CPBI during exposure to oxidizing molecules reveals a strongly increased PL intensity and longer lifetime indicating a prevalent role of CPBI trap states in the sensing mechanism. These findings provide new insights for the engineering of perovskite-based materials for their future chemical sensing applications.

Synthesis of stable and phase-adjustable CsPbBr3@Cs4PbBr6 nanocrystals via novel anion-cation reactions

All-inorganic cesium lead halide perovskites have emerged as promising semiconductor materials due to their preeminent performance in lighting, display, light detecting, and laser fields. However, the applications of lead halide perovskites are limited by the dissatisfactory stability owing to their fragile ionic crystal characteristics and highly dynamic surface-coordinated states. The in situ diphase structure passivation possessing the same chemical constituents (such as passivating CsPbBr3 with Cs4PbBr6) has been proven to be an effective way to improve the stabilities and simultaneously maintain the highly efficient luminescence properties. Herein, for the first time, we report a novel anion-cation reaction method to synthesize the lead halide perovskite NCs with diphase CsPbBr3@Cs4PbBr6 structure. Moreover, we have found that the phase transformation between CsPbBr3 and Cs4PbBr6 is temperature dependent. Thus, we could control the relative composition of the diphase CsPbBr3@Cs4PbBr6 composite by adjusting the temperature. The optimized CsPbBr3@Cs4PbBr6 composite NCs achieve highly light emissive performance and stabilities against atmosphere, moisture and heating. Furthermore, we could obtain 135% of the NTSC color gamut through anion exchange. These highly emissive composite NCs with improved stabilities exhibit great potential in future optoelectronic fields.

The photoluminescence mechanism of CsPb2Br5 microplates revealed by spatially resolved single particle spectroscopy

CsPb2Br5 is a new member of the all-inorganic lead halide perovskite family with unique structures and optoelectronic properties for various applications. As an indirect band gap semiconductor, the photoluminescence (PL) mechanism of CsPb2Br5 is still under debate. To resolve this issue, CsPb2Br5 microplates with strong green PL have been prepared by a hot-injection method. Characterization by transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis and ultraviolet-visible (UV-vis) absorption spectroscopy indicates the existence of a small amount of embedded CsPbBr3 phase. The removal of the embedded CsPbBr3 phase by treatment with water containing ethanol solvent resulted in complete PL quenching, suggesting the origin of PL due to the embedded CsPbBr3 phase. Spatially resolved PL and time-resolved PL mapping have been further employed to directly visualize the spatial distribution of different emission centers. Our single particle spectroscopic studies indicated the existence of three different emission centers with different PL lifetimes: two types of embedded CsPbBr3 phases (clumped and randomly distributed CsPbBr3 nanocrystals) and intrinsic defects of CsPb2Br5. The embedded CsPbBr3 phases with fast and intermediate PL lifetimes are the primary contributors to PL of the CsPb2Br5 microplates while their intrinsic defects with slow PL lifetimes make only a minor contribution. These studies have unambiguously clarified the PL mechanisms of the CsPb2Br5 microplates and provided the direct mapping of different emission centers, which resolve the contradictory explanation and debate about the PL mechanism of the CsPb2Br5 microplates.

Capillary-written single-crystalline all-inorganic perovskite microribbon arrays for highly-sensitive and thermal-stable photodetectors

In recent times, as a result of its exceptional resistance to moisture and heat, cesium lead bromide (CsPbBr3) has been established as a potential high-performance perovskite material for optoelectronics, which is inclusive of photodetectors and photovoltaics. It has been demonstrated that a perovskite single crystal has major benefits over its thin-film equivalents; nevertheless, the preparation of perovskite crystal arrays for the utilisation of extensive integration is a challenging task. In this paper, we consider a simple crystallisation system, being a capillary-written system to enable the growth of single crystal microribbon arrays (MRAs) directly from a precursor solution. It is demonstrated by microstructure characterisation that CsPbBr3 MRAs are good-quality single crystals with highly-aligned crystal packing and smooth surfaces. The band-edge photoluminescence (PL) is exceptionally resilient and has a lengthy PL life of ∼62 ns. An exceptional photo-response having a particularly quick 99 μs response time and a 2496 A W-1 ultra-high responsivity is exhibited by photodetectors which are built upon these MRAs. The fact that the as-fabricated photodetectors maintain 90% of their commencing performance following 100 days of constant stress testing under ambient conditions under an illumination of 450 nm, showing exceptional operational stability, is noteworthy. A significant step towards the large-area growth of high-quality perovskite MRAs is presented by this work. This supplies favourable opportunities to build high-performance optoelectronic and nanophotonic systems.

Broadband ultrafast nonlinear optical studies revealing exciting multi-photon absorption coefficients in phase pure zero-dimensional Cs4PbBr6 perovskite films

Lead halide perovskite nanocrystals (NCs) apart from their overwhelming optoelectronic applications have recently demonstrated promising nonlinear optical (NLO) properties such as strong two-photon absorption cross-sections (∼105 GM), two-photon fluorescence, and saturable absorption even at very high peak intensity. Zero-dimensional perovskite-related materials (0-D PRMs) are a new class of materials offering a high exciton binding energy (Eg ≥ 180 meV) with a strong photoluminescence (PL) quantum yield in few cases. Herein, we report the broadband third-order NLO properties of phase pure Cs4PbBr6 0-D PRM achieved using the Z-scan and degenerate four-wave mixing techniques in the femtosecond regime. Considering the growing content of the fluorescent and non-fluorescent forms of this material, we have performed our studies on both of them. These perovskite NCs exhibited strong multi-photon absorption properties in the near-infrared region with two-photon absorption (2PA) (cross-section, σ2 = 10-43-10-44 cm4 s equivalent to ∼106 GM) in the 500-800 nm region, three-photon absorption (3PA) (cross-section, σ3 ∼10-73 cm6 s2) in the 900-1200 nm region and four-photon absorption (4PA) (cross-section, σ4 ∼10-100 cm8 s3) in the 1300-1500 nm spectral region. These multi-photon absorption processes are explained using a simple band diagram. The measured NLO coefficients and cross-sections are fairly large when compared to some of the earlier reports on perovskite-based NCs. Cs4PbBr6 0-D PRM also demonstrated a large third-order NLO susceptibility χ(3) (∼10-7 esu), which can be attributed to the strong quantum confinement arising from spatially isolated, exciton containing individual [PbBr6]4- octahedron. These results clearly suggest the potential of 0D-PRMs in applications such as photonics and ultrafast all-optical switching devices.

Point Defects and Green Emission in Zero-Dimensional Perovskites

Zero-dimensional (0D) perovskites have recently opened a new frontier in device engineering for light conversion technologies due to their unprecedented high photoluminescence quantum yield as solids. Although many experimental and theoretical efforts have been made to understand their optical behavior, the origin of their green emission is still opaque. Here, we develop a complete experimental and theoretical picture of point defects in Cs-Pb-Br perovskites and demonstrate that bromide vacancies (V_Br) in prototype 0D perovskite Cs₄PbBr₆ have a low formation energy and a relevant defect level to contribute to the midgap radiative state. Moreover, the state-of-the-art characterizations including atomic-resolution electron imaging not only confirm the purity of the 0D phase of Br-deficient green-emissive Cs₄PbBr₆ nanocrystals (NCs) but also exclude the presence of CsPbBr₃ NCs impurities. Our findings provide robust evidence for defect-induced green luminescence in 0D perovskite NCs, which helps extend the scope of the utility of these bulk 0D quantum materials in optoelectronic applications.

Self-Powered Photodetector Based on Electric-Field-Induced Effects in MAPbI3 Perovskite with Improved Stability

A monolith photodetector is presented that utilizes the material properties of MAPbI₃ perovskite for self-powered operation and achieves improved stability by composting with polystyrene. The self-powered operation makes this device suitable for remote applications and in smart systems. Improved stability of more than 20 days, with performance maintained by over 80% under ambient conditions, is achieved by incorporating polystyrene without additional fabrication steps. A plain MAPbI₃ device in comparison shows a performance degradation of 70-85% within 4 days of operation. The incorporation of polystyrene also improves the current detectivity of the device by over 70 times compared to plain perovskite.

Zero-Dimensional Cesium Lead Halides: History, Properties, and Challenges

Over the past decade, lead halide perovskites (LHPs) have emerged as new promising materials in the fields of photovoltaics and light emission due to their facile syntheses and exciting optical properties. The enthusiasm generated by LHPs has inspired research in perovskite-related materials, including the so-called "zero-dimensional cesium lead halides", which will be the focus of this Perspective. The structure of these materials is formed of disconnected lead halide octahedra that are stabilized by cesium ions. Their optical properties are dominated by optical transitions that are localized within the individual octahedra, hence the title "'zero-dimensional perovskites". Controversial results on their physical properties have recently been reported, and the true nature of their photoluminescence is still unclear. In this Perspective, we will take a close look at these materials, both as nanocrystals and as bulk crystals/thin films, discuss the contrasting opinions on their properties, propose potential applications, and provide an outlook on future experiments.