Lone-Pair Electrons Do Not Necessarily Lead to Low Lattice Thermal Conductivity: An Exception of Two-Dimensional Penta-CN2

Thermal Transport in Pentagonal CX2 (X = N, P, As, and Sb)

Two-dimensional (2D) materials with a pentagonal structure have many unique physical properties and great potential for applications in electrical, thermal, and optical fields. In this paper, the intrinsic thermal transport properties of 2D pentagonal CX2 (X = N, P, As, and Sb) are comparatively investigated. The results show that penta-CN2 has a high thermal conductivity (302.7 W/mK), while penta-CP2, penta-CAs2, and penta-CSb2 have relatively low thermal conductivities of 60.0, 36.9, and 11.8 W/mK, respectively. The main reason for the high thermal conductivity of penta-CN2 is that the small atomic mass of the N atom is comparable to that of the C atom, resulting in a preferable pentagonal structure with stronger bonds and thus a higher phonon group velocity. The reduction in the thermal conductivity of the other three materials is mainly due to the gradually increased atomic mass from P to Sb, which reduces the phonon group velocity. In addition, the large atomic mass difference does not result in a huge enhancement of the anharmonicity or weakening of the phonon relaxation time. The present work is expected to deepen the understanding of the thermal transport of main group V 2D pentagonal carbons and pave the way for their future applications, also, providing ideas for finding potential thermal management materials.

Gaussian approximation potentials for accurate thermal properties of two-dimensional materials

Two-dimensional materials (2DMs) continue to attract a lot of attention, particularly for their extreme flexibility and superior thermal properties. Molecular dynamics simulations are among the most powerful methods for computing these properties, but their reliability depends on the accuracy of interatomic interactions. While first principles approaches provide the most accurate description of interatomic forces, they are computationally expensive. In contrast, classical force fields are computationally efficient, but have limited accuracy in interatomic force description. Machine learning interatomic potentials, such as Gaussian Approximation Potentials, trained on density functional theory (DFT) calculations offer a compromise by providing both accurate estimation and computational efficiency. In this work, we present a systematic procedure to develop Gaussian approximation potentials for selected 2DMs, graphene, buckled silicene, and h-XN (X = B, Al, and Ga, as binary compounds) structures. We validate our approach through calculations that require various levels of accuracy in interatomic interactions. The calculated phonon dispersion curves and lattice thermal conductivity, obtained through harmonic and anharmonic force constants (including fourth order) are in excellent agreement with DFT results. HIPHIVE calculations, in which the generated GAP potentials were used to compute higher-order force constants instead of DFT, demonstrated the first-principles level accuracy of the potentials for interatomic force description. Molecular dynamics simulations based on phonon density of states calculations, which agree closely with DFT-based calculations, also show the success of the generated potentials in high-temperature simulations.

First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor

Pentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pentagonal SiPN, p-SiPN, which is geometrically, thermodynamically, dynamically, and mechanically stable, and has promising experimental potential. The new p-SiPN shows an indirect bandgap semiconducting behavior that is highly tunable with applied equ-biaxial strain. It is mechanically isotropic, along the x-y in-plane direction, and is a soft material possessing high elasticity and ultimate strain. In addition, its exceptional anisotropic optical response with strong UV light absorbance, and small reflectivity and electron energy loss make it a potential material for optoelectronics and nanomechanics.

Bulk Superlattice Analogues for Energy Conversion

Energy storage and conversion in a clean, efficient, and safe way is the core appeal of a modern sustainable society, which is built on the development of multifunctional materials. Superlattice structures can integrate the advantage of their sublayers while new phenomena may arise from the interface, which play key roles in modern semiconductor technology; however, additional concerns such as stability and yield challenge their large-scale applications in industrial products. In this Perspective we focus our interest on a distinctive category of easily available multilayered inorganic materials that have well-defined subunit structures and can be regarded as bulk superlattice analogues. We illustrate several specific combining forms of subunits in bulk superlattice analogues, including soft/rigid sublayers, electron/phonon transport sublayers, quasi-two-dimensional layers, and intercalated metal layers. We hope to provide insights into material design and broaden the application scope in the field of energy conversion by integrating the versatility of subunits into these bulk superlattice analogues.

3-X Structural Model and Common Characteristics of Anomalous Thermal Transport: The Case of Two-Dimensional Boron Carbides

Improving the reliability of electronic devices requires effective heat management, and the key is the relationship between the thermal transport and temperature. Inspired by synthesized T-carbon and H-boron, the 3-X structural models are proposed to unify the two-dimensional (2D) multitriangle materials. Employing structural searches, we identify the stability of the 3-X configuration in 2D boron carbides as 3-9 BC₃ monolayer, which, unexpectedly, exhibits a linear thermal conductivity versus temperature, not the traditional ∼1/T trend. We summarize the common characteristics and explore why this behavior is absent in 3-9 AlC₃ and graphene via investigating the optical modes. We show that the linear behavior is a direct consequence of the special oscillation modes by the 3-X model associated with the largest group velocity. We find that 2D materials with such behavior usually share a relatively low thermal conductivity. Our work paves the way to deeply understand the lattice thermal transport and to widen nanoelectronic applications.

Pentagonal B2N3-based 3D metallic boron nitride with high energy density

Different from conventional insulating or semiconducting boron nitride,metallicBN has received increasing attention in recent years as its intrinsic metallicity grants it great potential for broad applications. In this study, by assembling the experimentally synthesized pentagonal B₂N₃units, we have proposed the first pentagon-based three-dimensional (3D) metallic boron nitride, labeled penta-B₄N_7.First-principles calculations together with molecular dynamics simulations and convex hull diagram show that penta-B₄N₇is not only thermally, dynamically and mechanically stable, but also three dimensionally metallic. A detailed analysis of its electronic structure reveals that the intrinsic metallicity comes from the delocalized electrons in the partially occupied antibonding N-Nπorbitals. Equally important, the energy density of penta-B₄N₇is found to be 4.07 kJ g^-1, which is the highest among that of all the 3D boron nitrides reported so far.

Lattice Thermal Transport in Monolayer Group 13 Monochalcogenides MX (M = Ga, In; X = S, Se, Te): Interplay of Atomic Mass, Harmonicity, and Lone-Pair-Induced Anharmonicity

We perform a systematic study of the lattice dynamics and the lattice thermal conductivity, κ, of monolayer group 13 monochalcogenides MX (M = Ga, In; X = S, Se, Te) by combining an iterative solution for linearized phonon Boltzmann transport equation and density functional theory. Among the competing factors influencing κ, harmonic parameters along with the atomic masses dominate over anharmonicity. An increase in atomic mass leads to a decrease in phonon frequencies and phonon group velocities and consequently in κ. At T = 300 K, the calculated κ values are 54.9, 48.1, 44.3, 25.0, 22.3, and 17.3 W m^-1 K^-1 for GaS, InS, GaSe, InSe, GaTe, and InTe monolayers, respectively. Further analysis of anharmonic scattering rates and average scattering matrix elements evidences that the anharmonicity characterized by the third-order IFCs in GaS and InS are the largest among all monolayer group 13 monochalcogenides despite the largest κ values. This is attributed to a strong interaction between nonbonding lone-pair s electrons around the S atom and adjacent bonding electrons. In addition, the κ of these monolayers further reduces to 50% for sample sizes 300-400 nm. Our findings provide fundamental insights into thermal transport in monolayer group 13 monochalcogenides and should stimulate further experimental exploration of thermal transport in these materials for possible theromoelectric and thermal management applications.

Inverse Design of Ultralow Lattice Thermal Conductivity Materials via Materials Database Screening of Lone Pair Cation Coordination Environment

The presence of lone pair (LP) electrons is strongly associated with the disruption of lattice heat transport, which is a critical component of strategies to achieve efficient thermoelectric energy conversion. By exploiting an empirical relationship between lattice thermal conductivity, κ_L, and the bond angles of pnictogen group LP cation coordination environments, we develop an inverse design strategy based on a materials database screening to identify chalcogenide materials with ultralow κ_L for thermoelectrics. Screening the ∼635 000 real and hypothetical inorganic crystals of the Open Quantum Materials Database based on the constituent elements, nominal electron counting, LP cation coordination environment, and synthesizability, we identify 189 compounds expected to exhibit ultralow κ_L. As a validation, we explicitly compute the lattice dynamical properties of two of the compounds (Cu₂AgBiPbS₄ and MnTl₂As₂S₅) using first-principles calculations and successfully find both achieve ultralow κ_L values at room temperature of ∼0.3-0.4 W/(m·K) corresponding to the amorphous limit. Our data-driven approach provides promising candidates for thermoelectric materials and opens new avenues for the design of phononic properties of materials.

Penta-BCN: A New Ternary Pentagonal Monolayer with Intrinsic Piezoelectricity

Going beyond conventional hexagonal sheets, pentagonal 2D structures are of current interest due to their novel properties and broad applications. Herein, for the first time, we study a ternary pentagonal BCN monolayer, penta-BCN, which exhibits intrinsic piezoelectric properties. Based on state-of-the-art theoretical calculations, we find that penta-BCN is stable mechanically, thermally, and dynamically and has a direct band gap of 2.81 eV. Due to its unique atomic configuration with noncentrosymmetric and semiconducting features, penta-BCN displays high spontaneous polarization of 3.17 × 10^-10 C/m and a prominent piezoelectricity with d₂₁ = 0.878 pm/V, d₂₂ = -0.678 pm/V, and d₁₆ = 1.72 pm/V, which are larger than those of an h-BN sheet and functionalized pentagraphene. Since B, C, and N are rich in resources, light in mass, and benign to the environment, the intrinsic polarization and piezoelectricity make the penta-BCN monolayer promising for technological applications. This study expands the family of 2D pentagonal structures with new features.