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Zhang W, Ding S, Zhang J, Cheng Z, Wu Z. A 2D low-buckled hexagonal honeycomb Weyl-point spin-gapless semiconductor family with the quantum anomalous Hall effect. NANOSCALE 2024; 16:17110-17117. [PMID: 39189678 DOI: 10.1039/d4nr00120f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Spin-gapless semiconductors (SGSs), serving as superior alternatives to half-metals, open up new avenues in spintronics. Specifically, Weyl-point SGSs (WPSGSs) with ideal Weyl points at the Fermi energy level represent an optimal amalgamation of spintronics and topological physics. Moreover, considering spin-orbital coupling (SOC), most two-dimensional (2D) WPSGSs undergo transformation into half Chern insulators (HCIs) with the emergence of the quantum anomalous Hall effect (QAHE). The 2D I-II-V half-Heusler compounds, constituting a broad family of narrow-bandgap semiconductors with low-buckled hexagonal honeycomb crystal structures akin to silicene, aptly function as SGSs and serve as nontrivial topological parent materials. Through first-principles calculations, we propose that the Li12X10Cr2Y12 (X = Mg, Zn, Cd; Y = P, As) monolayers, derived by substituting certain X atoms in the LiXY (X = Mg, Zn, Cd; Y = P, As) monolayers of I-II-V half-Heusler compounds with Cr atoms, emerge as potential candidates for ideal 2D WPSGSs. These monolayers exhibit stable thermodynamic properties and 100% spin polarization. With SOC taken into account, the Li12X10Cr2Y12 monolayers transition into HCIs with a Chern number of +1, giving rise to the QAHE. These intriguing findings lay the groundwork for a promising material platform for the development of low-power spintronic and topological microelectronic devices.
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Affiliation(s)
- Weihua Zhang
- School of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.
| | - Shoubing Ding
- School of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.
| | - Jie Zhang
- School of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.
| | - Zhimin Wu
- School of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.
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2
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Zhang X, Wang X, He T, Wang L, Yu WW, Liu Y, Liu G, Cheng Z. Magnetic topological materials in two-dimensional: theory, material realization and application prospects. Sci Bull (Beijing) 2023; 68:2639-2657. [PMID: 37734982 DOI: 10.1016/j.scib.2023.09.004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Revised: 07/12/2023] [Accepted: 08/23/2023] [Indexed: 09/23/2023]
Abstract
Two-dimensional (2D) magnetism and nontrivial band topology are both areas of research that are currently receiving significant attention in the study of 2D materials. Recently, a novel class of materials has emerged, known as 2D magnetic topological materials, which elegantly combine 2D magnetism and nontrivial topology. This field has garnered increasing interest, especially due to the emergence of several novel magnetic topological states that have been generalized into the 2D scale. These states include antiferromagnetic topological insulators/semimetals, second-order topological insulators, and topological half-metals. Despite the rapid advancements in this emerging research field in recent years, there have been few comprehensive summaries of the state-of-the-art progress. Therefore, this review aims to provide a thorough analysis of current progress on 2D magnetic topological materials. We cover various 2D magnetic topological insulators, a range of 2D magnetic topological semimetals, and the novel 2D topological half-metals, systematically analyzing the basic topological theory, the course of development, the material realization, and potential applications. Finally, we discuss the challenges and prospects for 2D magnetic topological materials, highlighting the potential for future breakthroughs in this exciting field.
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Affiliation(s)
- Xiaoming Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Xiaotian Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Tingli He
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Lirong Wang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Wei-Wang Yu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Ying Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Guodong Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.
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3
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Abedi S, Taghizadeh Sisakht E, Hashemifar SJ, Ghafari Cherati N, Abdolhosseini Sarsari I, Peeters FM. Prediction of novel two-dimensional Dirac nodal line semimetals in Al 2B 2 and AlB 4 monolayers. NANOSCALE 2022; 14:11270-11283. [PMID: 35880622 DOI: 10.1039/d2nr00888b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Topological semimetal phases in two-dimensional (2D) materials have gained widespread interest due to their potential applications in novel nanoscale devices. Despite the growing number of studies on 2D topological nodal lines (NLs), candidates with significant topological features that combine nontrivial topological semimetal phase with superconductivity are still rare. Herein, we predict Al2B2 and AlB4 monolayers as new 2D nonmagnetic Dirac nodal line semimetals with several novel features. Our extensive electronic structure calculations combined with analytical studies reveal that, in addition to multiple Dirac points, these 2D configurations host various highly dispersed NLs around the Fermi level, all of which are semimetal states protected by time-reversal and in-plane mirror symmetries. The most intriguing NL in Al2B2 encloses the K point and crosses the Fermi level, showing a considerable dispersion and thus providing a fresh playground to explore exotic properties in dispersive Dirac nodal lines. More strikingly, for the AlB4 monolayer, we provide the first evidence for a set of 2D nonmagnetic open type-II NLs coexisting with superconductivity at a rather high transition temperature. The coexistence of superconductivity and nontrivial band topology in AlB4 not only makes it a promising material to exhibit novel topological superconducting phases, but also a rather large energy dispersion of type-II nodal lines in this configuration may offer a platform for the realization of novel topological features in the 2D limit.
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Affiliation(s)
- Saeid Abedi
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran.
| | | | - S Javad Hashemifar
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran.
| | - Nima Ghafari Cherati
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran.
| | | | - Francois M Peeters
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
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4
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Zhao YC, Zhu MX, Wang Y, Li P. Honeycomb-kagome lattice Na3Te2: Dirac half-metal with quantum anomalous Hall effect. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2022.111658] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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5
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Zhang K, Chen M, Wang D, Lv H, Wu X, Yang J. Nodal-loop half metallicity in a two-dimensional Fe 4N 2 pentagon crystal with room-temperature ferromagnetism. NANOSCALE 2021; 13:19493-19499. [PMID: 34796890 DOI: 10.1039/d1nr06033c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials with fully spin-polarized nodal-loop band crossing are a class of topological magnetic materials, holding promise for high-speed low-dissipation spintronic devices. Recently, several 2D nodal-loop materials have been reported in theory and experiment, such as Cu2Si, Be2C, CuSe, and Cr2S3 monolayers, adopting triangular, tetragonal, hexagonal, or complex lattices. However, a 2D nodal-loop half metal with room-temperature magnetism is still less reported. Here, we report that the 2D Fe4N2 pentagon crystal is a nodal-loop half metal with room-temperature magnetism over 428 K and a global minimum structure via first-principles calculations and global structure search. The Dirac nodal lines in Fe4N2 form a flat nodal loop at the Fermi level and a spin-polarized type-II nodal-loop above the Fermi level, which are protected by mirror symmetry. Our results establish Fe4N2 as a platform to obtain nodal-loop half metallicity in the 2D pentagon lattice and provide opportunities to build high-speed low-dissipation spintronics in the nanoscale.
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Affiliation(s)
- Kai Zhang
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Minglong Chen
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
| | - Dayong Wang
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
| | - Haifeng Lv
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaojun Wu
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
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6
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Fedorov AV, Poelchen G, Eremeev SV, Schulz S, Generalov A, Polley C, Laubschat C, Kliemt K, Kaya N, Krellner C, Chulkov EV, Kummer K, Usachov DY, Ernst A, Vyalikh DV. Insight into the Temperature Evolution of Electronic Structure and Mechanism of Exchange Interaction in EuS. J Phys Chem Lett 2021; 12:8328-8334. [PMID: 34428055 DOI: 10.1021/acs.jpclett.1c02274] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Discovered in 1962, the divalent ferromagnetic semiconductor EuS (TC = 16.5 K, Eg = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostructures, and multilayer sequences and to combination with topological materials. Because detailed information on the electronic structure of EuS and, in particular, its evolution across TC is not well-represented in the literature but is essential for the development of new functional systems, the present work aims at filling this gap. Our angle-resolved photoemission measurements complemented with first-principles calculations demonstrate how the electronic structure of EuS evolves across a paramagnetic-ferromagnetic transition. Our results emphasize the importance of the strong Eu 4f-S 3p mixing for exchange-magnetic splittings of the sulfur-derived bands as well as coupling between f and d orbitals of neighboring Eu atoms to derive the value of TC accurately. The 4f-3p mixing facilitates the coupling between 4f and 5d orbitals of neighboring Eu atoms, which mainly governs the exchange interaction in EuS.
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Affiliation(s)
- A V Fedorov
- Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
- Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
| | - G Poelchen
- Institut für Festkörper- und Materialphysik, TU Dresden, 01069 Dresden, Germany
- European Synchrotron Radiation Facility (ESRF), Grenoble, France
| | - S V Eremeev
- Institute of Strength Physics and Materials Science, 634055 Tomsk, Russia
| | - S Schulz
- Institut für Festkörper- und Materialphysik, TU Dresden, 01069 Dresden, Germany
| | - A Generalov
- Max IV Laboratory, Lund University, Box 118, 22100 Lund, Sweden
| | - C Polley
- Max IV Laboratory, Lund University, Box 118, 22100 Lund, Sweden
| | - C Laubschat
- Institut für Festkörper- und Materialphysik, TU Dresden, 01069 Dresden, Germany
| | - K Kliemt
- Kristall- und Materiallabor, Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, Germany
| | - N Kaya
- Kristall- und Materiallabor, Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, Germany
| | - C Krellner
- Kristall- und Materiallabor, Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, Germany
| | - E V Chulkov
- Tomsk State University, 634050 Tomsk, Russia
- Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Ciencias Químicas, Universidad del País Vasco UPV/EHU, 20080 San Sebastián/Donostia, Spain
- Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, 20018 San Sebastián/Donostia, Spain
- Donostia International Physics Center (DIPC), 20018 Donostia-San Sebastián, Spain
- St. Petersburg State University, St. Petersburg, 199034, Russia
| | - K Kummer
- European Synchrotron Radiation Facility (ESRF), Grenoble, France
| | - D Yu Usachov
- St. Petersburg State University, St. Petersburg, 199034, Russia
| | - A Ernst
- Institut für Theoretische Physik, Johannes Kepler Universität, A 4040 Linz, Austria
- Max-Planck-Institut für Mikrostrukturphysik, D-06120 Halle, Germany
| | - D V Vyalikh
- Donostia International Physics Center (DIPC), 20018 Donostia-San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain
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7
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Jin L, Wang L, Zhang X, Liu Y, Dai X, Gao H, Liu G. Fully spin-polarized Weyl fermions and in/out-of-plane quantum anomalous Hall effects in a two-dimensional d 0 ferromagnet. NANOSCALE 2021; 13:5901-5909. [PMID: 33725053 DOI: 10.1039/d0nr07556f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The quantum anomalous Hall effect (QAHE) in intrinsic ferromagnets has attracted considerable attention recently. Previously, studies of the QAHE have mostly focused on the default assumption of out-of-plane magnetization. In fact, the QAHE can also be achieved via in-plane magnetization, but such candidate materials are very scarce. Here, we find that two-dimensional (2D) YN2 not only possesses the previously reported out-of-plane QAHE, but it also possesses a tunable in-plane QAHE. More importantly, unlike the previously reported in-plane QAHE in d/f-type ferromagnets, here we report the effect in a 2D d0 ferromagnet, namely YN2, for the first time. In the ground state, a YN2 monolayer has a half-metal band structure, and manifests six pairs of fully spin-polarized Weyl points at the Fermi level. When spin-orbit coupling is included, the YN2 monolayer can realize multiple topological phases, determined based on the magnetization direction. Under in-plane magnetization, the YN2 monolayer shows either the Weyl state or in-plane QAHE state. Remarkably, the Chern number (±1) and the propagating direction of QAHE edge channels can be continuously switched via shifting the direction of the in-plane magnetic field. When magnetization is applied out-of-plane, the YN2 monolayer realizes an out-of-plane QAHE phase with a high Chern number of 3. The nontrivial edge states for all the topological phases in the YN2 monolayer have been clearly identified. This work suggests that 2D YN2 is an excellent candidate for investigating in-plane QAHE phases in d0 ferromagnets.
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Affiliation(s)
- Lei Jin
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China.
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8
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Li XY, Ji WX, Wang PJ, Zhang CW. Half-Dirac semimetals and the quantum anomalous Hall effect in Kagome Cd 2N 3 lattices. NANOSCALE ADVANCES 2021; 3:847-854. [PMID: 36133851 PMCID: PMC9418731 DOI: 10.1039/d0na00530d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2020] [Accepted: 12/05/2020] [Indexed: 06/14/2023]
Abstract
Half-Dirac semimetals (HDSs), which possess 100% spin-polarizations for Dirac materials, are highly desirable for exploring various topological phases of matter as low-dimensionality opens unprecedented opportunities for manipulating the quantum state of low-cost electronic nanodevices. The search for high-temperature HDSs is still a current hotspot and yet challenging experimentally. Herein based on first-principles calculations, we propose the realization of Half Dirac semimetals (HDS) in two-dimensional (2D) Kagome transition-metal nitride Cd2N3, which is robust against strain engineering. Monte Carlo simulations reveal that Cd2N3 possesses a Curie temperature reaching up to T C = 225 K, which is much higher than that of the reported monolayers CrI3 (T C = 45 K) and Cr2Ge2Te6 (T C = 20 K). The band crossings in Cd2N3 are gapped out by the spin-orbit coupling, which brings about the quantum anomalous Hall (QAH) effect with a sizeable band gap of E g = 4.9 meV, characterized by the nonzero Chern number (C = 1) and chiral edge states. A tight-binding model is further used to clarify the origin of HDSs and nontrivial electronic properties. The results suggest monolayer transition-metal nitrides as a promising platform to explore fascinating physical phenomena associated with novel 2D emergent HDSs and QAH insulators toward realistic spintronics devices, thus stimulating experimental interest.
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Affiliation(s)
- Xin-Yang Li
- School of Physics and Technology, University of Jinan Jinan Shandong 250022 People's Republic of China
| | - Wei-Xiao Ji
- School of Physics and Technology, University of Jinan Jinan Shandong 250022 People's Republic of China
| | - Pei-Ji Wang
- School of Physics and Technology, University of Jinan Jinan Shandong 250022 People's Republic of China
| | - Chang-Wen Zhang
- School of Physics and Technology, University of Jinan Jinan Shandong 250022 People's Republic of China
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9
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Bao H, Zhao B, Xue Y, Huan H, Gao G, Liu X, Yang Z. Various half-metallic nodal loops in organic Cr 2N 6C 3 monolayers. NANOSCALE 2021; 13:3161-3172. [PMID: 33527935 DOI: 10.1039/d0nr07485c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Topological nodal-line semimetals, as a type of exotic quantum electronic state, have drawn considerable research interest recently. In this work, we propose a new two-dimensional covalent-organic Cr2N6C3 monolayer (ML) material, which has a combined honeycomb and effective Kagome lattice and has various half-metallic nodal loops (HMNLs). First-principles calculations show that the Cr2N6C3 ML is dynamically and thermally stable and has an out-of-plane ferromagnetic order. Remarkably, various nodal loops, including types I-III, are found coexisting in the material, all of which are rare half-metallic states. The obtained HMNLs, simultaneously possessing the merits of spintronics and semimetals, are robust against spin-orbit coupling and biaxial strain. A topological phase transition, characterized by loop-winding indexes, can be induced in the ML by applying uniaxial strain. Tight-binding model calculations show that the obtained HMNLs originate primarily from the band inversion between Cr dx2-y2/xy and N pz orbitals, accommodated on the honeycomb and Kagome sublattices, respectively. The various predicted HMNLs and topological behaviors mean that the Cr2N6C3 MLs have promisingly versatile applications in future low-power-consuming spintronics and electronics.
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Affiliation(s)
- Hairui Bao
- State Key Laboratory of Surface Physics and Key Laboratory of Computational Physical Sciences (MOE) & Department of Physics, Fudan University, Shanghai 200433, China.
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10
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Xie H, Qie Y, Muhammad I, Sun Q. 2D CrCl 2(pyrazine) 2 monolayer: high-temperature ferromagnetism and half-metallicity. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:135801. [PMID: 31778979 DOI: 10.1088/1361-648x/ab5ca4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The ferromagnetism in Cr-based monolayers is of current interest (2019 Nat. Nanotechnol. 14 408), however, the Curie temperature is low. How can we enhance the thermal stability of ferromagnetism? Motivated by the recent synthesis of the layered conductive magnet CrCl2(pyrazine)2 (2018 Nat. Chem. 10 1056), we perform first-principles calculations and Monte Carlo simulations to demonstrate that the exfoliated 2D CrCl2(pyrazine)2 monolayer is stable dynamically and thermally, and it is a ferromagnetic half-metal with a sizeable band gap of 2.8 eV in the semiconducting channel, and the strong in-plane Cr-Cr interaction results in a large magnetic anisotropy energy. Moreover, the sheet exhibits a high Curie temperature of 350 K due to the enhanced magnetic exchange interaction resulting from the aromatic property of pyrazine. All of these intriguing features endow 2D CrCl2(pyrazine)2 sheet with good potentials for applications in nanoscale spintronics devices.
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Affiliation(s)
- Huanhuan Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
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11
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Hu Y, Li SS, Ji WX, Zhang CW, Ding M, Wang PJ, Yan SS. Glide Mirror Plane Protected Nodal-Loop in an Anisotropic Half-Metallic MnNF Monolayer. J Phys Chem Lett 2020; 11:485-491. [PMID: 31885272 DOI: 10.1021/acs.jpclett.9b03320] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) nodal-loop (NL) semimetals have attracted tremendous attention for their abundant physics and potential device applications, whereas the realization of gapless NL semimetals robust against spin-orbit coupling (SOC) remains a big challenge. Recently, breakthroughs have been made with the realization of gapless NL semimetals in 2D half-metallic materials, where NLs were protected by a horizontal mirror plane symmetry. Here we first propose an alternative nonsymmorphic horizontal glide mirror plane symmetry which could protect the NLs in 2D materials. On the basis of comprehensive first-principles calculations and symmetry analysis, we found that the glide mirror symmetry together with intrinsic out-of-plane spin polarization can protect the NL against SOC in a half-metallic semimetal, namely, the MnNF monolayer. Moreover, we predict that the MnNF monolayer has strong anisotropic characteristics, tunable band structure by changing the magnetization direction, and 100% spin-polarized transport properties. Our work not only provides a novel 2D half-metallic semimetal with strong anisotropy but also broadens the scope of 2D nodal-loop materials.
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Affiliation(s)
- Yang Hu
- Spintronics Institute, School of Physics and Technology , University of Jinan , Jinan 250022 , China
| | - Sheng-Shi Li
- Spintronics Institute, School of Physics and Technology , University of Jinan , Jinan 250022 , China
| | - Wei-Xiao Ji
- Spintronics Institute, School of Physics and Technology , University of Jinan , Jinan 250022 , China
| | - Chang-Wen Zhang
- Spintronics Institute, School of Physics and Technology , University of Jinan , Jinan 250022 , China
| | - Meng Ding
- Spintronics Institute, School of Physics and Technology , University of Jinan , Jinan 250022 , China
| | - Pei-Ji Wang
- Spintronics Institute, School of Physics and Technology , University of Jinan , Jinan 250022 , China
| | - Shi-Shen Yan
- Spintronics Institute, School of Physics and Technology , University of Jinan , Jinan 250022 , China
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12
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Jiao Y, Wu W, Ma F, Yu ZM, Lu Y, Sheng XL, Zhang Y, Yang SA. Room temperature ferromagnetism and antiferromagnetism in two-dimensional iron arsenides. NANOSCALE 2019; 11:16508-16514. [PMID: 31453618 DOI: 10.1039/c9nr04338a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The discovery of two-dimensional (2D) magnetic materials with high critical temperature and intrinsic magnetic properties has attracted significant research interest. By using swarm-intelligence structure search and first-principles calculations, we predict three 2D iron arsenide monolayers (denoted as FeAs-I, II and III) with good energetic and dynamical stabilities. We find that FeAs-I and II are ferromagnets, while FeAs-III is an antiferromagnet. FeAs-I and III have sizable magnetic anisotropy comparable to the magnetic recording materials such as the FeCo alloy. Importantly, we show that FeAs-I and III have critical temperatures of 645 K and 350 K, respectively, which are above room temperature. In addition, FeAs-I and II are metallic, while FeAs-III is semiconducting with a gap comparable to Si. For FeAs-III, there exist two pairs of 2D antiferromagnetic Dirac points below the Fermi level, and it displays a giant magneto band-structure effect. The superior magnetic and electronic properties of the FeAs monolayers make them promising candidates for spintronics applications.
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Affiliation(s)
- Yalong Jiao
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Weikang Wu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Fengxian Ma
- Department of Physics, Hebei Normal University, Shijiazhuang 050024, China
| | - Zhi-Ming Yu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Yunhao Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xian-Lei Sheng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore and Department of Physics, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beihang University, Beijing 100191, China.
| | - Yunwei Zhang
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK.
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
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