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Zhang X, Wang X, He T, Wang L, Yu WW, Liu Y, Liu G, Cheng Z. Magnetic topological materials in two-dimensional: theory, material realization and application prospects. Sci Bull (Beijing) 2023; 68:2639-2657. [PMID: 37734982 DOI: 10.1016/j.scib.2023.09.004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Revised: 07/12/2023] [Accepted: 08/23/2023] [Indexed: 09/23/2023]
Abstract
Two-dimensional (2D) magnetism and nontrivial band topology are both areas of research that are currently receiving significant attention in the study of 2D materials. Recently, a novel class of materials has emerged, known as 2D magnetic topological materials, which elegantly combine 2D magnetism and nontrivial topology. This field has garnered increasing interest, especially due to the emergence of several novel magnetic topological states that have been generalized into the 2D scale. These states include antiferromagnetic topological insulators/semimetals, second-order topological insulators, and topological half-metals. Despite the rapid advancements in this emerging research field in recent years, there have been few comprehensive summaries of the state-of-the-art progress. Therefore, this review aims to provide a thorough analysis of current progress on 2D magnetic topological materials. We cover various 2D magnetic topological insulators, a range of 2D magnetic topological semimetals, and the novel 2D topological half-metals, systematically analyzing the basic topological theory, the course of development, the material realization, and potential applications. Finally, we discuss the challenges and prospects for 2D magnetic topological materials, highlighting the potential for future breakthroughs in this exciting field.
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Affiliation(s)
- Xiaoming Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Xiaotian Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Tingli He
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Lirong Wang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Wei-Wang Yu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Ying Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Guodong Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.
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Abstract
Quantum anomalous Hall (QAH) insulators possess exotic properties driven by novel topological physics, but related studies and potential applications have been hindered by the ultralow temperatures required to sustain the operating mechanisms dictated by key material parameters. Here, using first-principles calculations, we predict a robust QAH state in monolayer TiTe that exhibits a high ferromagnetic Curie temperature of 650 K and a sizable band gap of 261 meV. These outstanding benchmark properties stem from the Te atom's large size that favors ferromagnetic kinetic exchange with the neighboring Ti atoms and strong spin-orbit coupling that creates a QAH state by adding a mass term to the Dirac half-semimetal state. Remarkably, the ferromagnetic order remains robust against interlayer stacking via the d-pz/py-pz-d super-super exchange, generating unprecedented QAH states in few-layer configurations with enhanced Curie temperatures and higher Chern numbers. These results signify layered TiTe to be a prime template for exploring novel QAH physics at ambient and higher temperatures.
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Affiliation(s)
- Xiaoyu Xuan
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Zhuhua Zhang
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Changfeng Chen
- Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
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Xu L, Mao Y, Wang H, Li J, Chen Y, Xia Y, Li Y, Pei D, Zhang J, Zheng H, Huang K, Zhang C, Cui S, Liang A, Xia W, Su H, Jung S, Cacho C, Wang M, Li G, Xu Y, Guo Y, Yang L, Liu Z, Chen Y, Jiang M. Persistent surface states with diminishing gap in MnBi 2Te 4/Bi 2Te 3 superlattice antiferromagnetic topological insulator. Sci Bull (Beijing) 2020; 65:2086-2093. [PMID: 36732961 DOI: 10.1016/j.scib.2020.07.032] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2019] [Revised: 05/02/2020] [Accepted: 07/17/2020] [Indexed: 02/04/2023]
Abstract
Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states with a diminishing gap show negligible temperature dependence across the AFM transition. Together with the results of its sister compound MnBi2Te4, we illustrate important aspects of electronic structures and the effect of magnetic ordering in this family of magnetic TQMs.
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Affiliation(s)
- Lixuan Xu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuanhao Mao
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Hongyuan Wang
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiaheng Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yujie Chen
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yunyouyou Xia
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yiwei Li
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK
| | - Ding Pei
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK
| | - Jing Zhang
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
| | - Huijun Zheng
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
| | - Kui Huang
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
| | - Chaofan Zhang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Shengtao Cui
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
| | - Aiji Liang
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hao Su
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
| | - Sungwon Jung
- Diamond Light Source, Harwell Campus, Didcot OX11 0DE, UK
| | - Cephise Cacho
- Diamond Light Source, Harwell Campus, Didcot OX11 0DE, UK
| | - Meixiao Wang
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Gang Li
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Beijing 100084, China; RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Beijing 100084, China.
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China.
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK.
| | - Mianheng Jiang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; University of Chinese Academy of Sciences, Beijing 100049, China
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Chong YX, Liu X, Sharma R, Kostin A, Gu G, Fujita K, Davis JCS, Sprau PO. Severe Dirac Mass Gap Suppression in Sb 2Te 3-Based Quantum Anomalous Hall Materials. Nano Lett 2020; 20:8001-8007. [PMID: 32985892 DOI: 10.1021/acs.nanolett.0c02873] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The quantum anomalous Hall (QAH) effect appears in ferromagnetic topological insulators (FMTIs) when a Dirac mass gap opens in the spectrum of the topological surface states (SSs). Unaccountably, although the mean mass gap can exceed 28 meV (or ∼320 K), the QAH effect is frequently only detectable at temperatures below 1 K. Using atomic-resolution Landau level spectroscopic imaging, we compare the electronic structure of the archetypal FMTI Cr0.08(Bi0.1Sb0.9)1.92Te3 to that of its nonmagnetic parent (Bi0.1Sb0.9)2Te3, to explore the cause. In (Bi0.1Sb0.9)2Te3, we find spatially random variations of the Dirac energy. Statistically equivalent Dirac energy variations are detected in Cr0.08(Bi0.1Sb0.9)1.92Te3 with concurrent but uncorrelated Dirac mass gap disorder. These two classes of SS electronic disorder conspire to drastically suppress the minimum mass gap to below 100 μeV for nanoscale regions separated by <1 μm. This fundamentally limits the fully quantized anomalous Hall effect in Sb2Te3-based FMTI materials to very low temperatures.
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Affiliation(s)
- Yi Xue Chong
- LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, United States
- CMPMS Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Xiaolong Liu
- LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell, Cornell University, Ithaca, New York 14853, United States
| | - Rahul Sharma
- LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, United States
- CMPMS Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Andrey Kostin
- LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, United States
| | - Genda Gu
- CMPMS Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - K Fujita
- CMPMS Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - J C Séamus Davis
- LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, United States
- Department of Physics, University College Cork, Cork T12R5C, Ireland
- Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, U.K
| | - Peter O Sprau
- LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, United States
- Advanced Development Center, ASML, Wilton, Connecticut 06897, United States
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5
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Huang ZQ, Chen WC, Macam GM, Crisostomo CP, Huang SM, Chen RB, Albao MA, Jang DJ, Lin H, Chuang FC. Prediction of Quantum Anomalous Hall Effect in MBi and MSb (M:Ti, Zr, and Hf) Honeycombs. Nanoscale Res Lett 2018; 13:43. [PMID: 29417237 PMCID: PMC5803167 DOI: 10.1186/s11671-017-2424-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/02/2017] [Accepted: 12/25/2017] [Indexed: 06/08/2023]
Abstract
The abounding possibilities of discovering novel materials has driven enhanced research effort in the field of materials physics. Only recently, the quantum anomalous hall effect (QAHE) was realized in magnetic topological insulators (TIs) albeit existing at extremely low temperatures. Here, we predict that MPn (M =Ti, Zr, and Hf; Pn =Sb and Bi) honeycombs are capable of possessing QAH insulating phases based on first-principles electronic structure calculations. We found that HfBi, HfSb, TiBi, and TiSb honeycomb systems possess QAHE with the largest band gap of 15 meV under the effect of tensile strain. In low-buckled HfBi honeycomb, we demonstrated the change of Chern number with increasing lattice constant. The band crossings occurred at low symmetry points. We also found that by varying the buckling distance we can induce a phase transition such that the band crossing between two Hf d-orbitals occurs along high-symmetry point K2. Moreover, edge states are demonstrated in buckled HfBi zigzag nanoribbons. This study contributes additional novel materials to the current pool of predicted QAH insulators which have promising applications in spintronics.
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Affiliation(s)
- Zhi-Quan Huang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
| | - Wei-Chih Chen
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
| | - Gennevieve M Macam
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
| | | | - Shin-Ming Huang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
| | - Rong-Bin Chen
- Center of General Studies, National Kaohsiung Marine University, Kaohsiung, 811, Taiwan
| | - Marvin A Albao
- Institute of Mathematical Sciences and Physics, University of The Philippines Los Baños College, Laguna, 811, Philippines
| | - Der-Jun Jang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
- Multidisciplinary and Data Science Research Center, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan.
- Multidisciplinary and Data Science Research Center, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan.
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