Strain Controls Charge Carrier Lifetimes in Monolayer WSe2: Ab Initio Time Domain Analysis

Compression of Organic Molecules Coupled with Hydrogen Bonding Extends the Charge Carrier Lifetime in BA2SnI4

Two-dimensional (2D) metal halide perovskites, such as BA2SnI4 (BA═CH3(CH2)3NH3), exhibit an enhanced charge carrier lifetime in experiments under strain. Experiments suggest that significant compression of the BA molecule, rather than of the inorganic lattice, contributes to this enhancement. To elucidate the underlying physical mechanism, we apply a moderate compressive strain to the entire system and subsequently introduce significant compression to the BA molecules. We then perform ab initio nonadiabatic molecular dynamics simulations of nonradiative electron-hole recombination. We observe that the overall lattice compression reduces atomic motions and decreases nonadiabatic coupling, thereby delaying electron-hole recombination. Additionally, compression of the BA molecules enhances hydrogen bonding between the BA molecules and iodine atoms, which lengthens the Sn-I bonds, distorts the [SnI6]4- octahedra, and suppresses atomic motions further, thus reducing nonadiabatic coupling. Also, the elongated Sn-I bonds and weakened antibonding interactions increase the band gap. Altogether, the compression delays the nonradiative electron-hole recombination by more than a factor of 3. Our simulations provide new and valuable physical insights into how compressive strain, accommodated primarily by the organic ligands, positively influences the optoelectronic properties of 2D layered halide perovskites, offering a promising pathway for further performance improvements.

Vertical Dipole Dominates Charge Carrier Lifetime in Monolayer Janus MoSSe

Two-dimensional semiconductor materials with vertical dipoles are promising photocatalysts as vertical dipoles not only promote the electron-hole separation but also enhance the carrier redox ability. However, the influence of vertical dipoles on carrier recombination in such materials, especially the competing relationship between vertical dipoles and band gaps, is not yet clear. Herein, first-principles calculations and nonadiabatic molecular dynamics simulations were combined to clarify the influence of band gap and vertical dipole on the carrier lifetime in Janus MoSSe monolayer. By comparing with the results of MoS2 and MoSe2 as well as exploring the carrier lifetime of MoSSe under strain regulation, it has been demonstrated that the vertical dipole, rather than the band gap, is the dominant factor affecting the carrier lifetime. Strikingly, a linear relationship between the carrier lifetime and vertical dipole is revealed. These findings have important implications for the design of high-performance photocatalysts and optoelectronic devices.

First-principle study on the photoelectric properties of monolayer h-BN under different strain types

CONTEXT

Two-dimensional materials are a new and promising research field in materials science. This is mainly attributed to their unique photoelectric and chemical properties. In addition to possessing unique optoelectronic and chemical properties, two-dimensional materials also have important application prospects in the field of field-effect devices. Based on density functional theory, the effects of uniaxial strain and equibiaxial strain on the mechanical properties, electronic structure, and optical properties of monolayer h-BN were studied using first principles. The results indicate that compressive strain has a significant impact on the stability of monolayer h-BN. The band gap width of monolayer h-BN decreases with increasing strain, and the optical properties of monolayer h-BN exhibit a relative trend under tensile and compressive strains. The influence of biaxial strain on the mechanical properties, electronic structure, and optical properties of monolayer h-BN is greater than that of uniaxial strain.

METHODS

All the calculations were done by the VASP software based on density functional theory. The interaction between atomic nuclei and electrons is described by the projected added wave pseudopotential (PAW), using the generalized gradient approximation (GGA) to exchange the Perdew-Burke-Ernzerhof (PBE) of the functional. To avoid interlayer interactions, a 15-Å vacuum layer was set up. The Brillouin zone selects the Monkhorst-Pack method to generate 9 × 9 × 1 of k-point grid, the cut off energy is set to 500 eV, the energy convergence standard of the system is 1 × 10-5 eV, and the interaction force between atoms is 0.01 eV/Å.

Resolving the Puzzle of Charge Carrier Lifetime in ZnO by Revisiting the Role of Oxygen Vacancy

Zinc oxide (ZnO) is a wide bandgap prototypical n-type semiconductor due to the presence of intrinsic oxygen vacancies (VO). The VO can readily transfer to the most energetically favorable +2 charged VO (VO2+) by losing two electrons mediated by the metastable VO1+ defect. Nevertheless, the influence of charged VO on the charge dynamics in ZnO and the underlying mechanisms remain elusive. By performing nonadiabatic molecular dynamics simulations of the charge trapping and recombination processes, we show that both VO1+ and VO2+ slow down the nonradiative electron-hole recombination via assisted defect states and, thus, extending charge carrier lifetime compared to pristine ZnO. Our study contributes to identifying the different recombination pathways that take place in VO1+ and VO2+ of n-type ZnO systems, providing useful guidance for designing high-performance ZnO-based devices.

Tensile Strain-Dependent Ultrafast Electron Transfer and Relaxation Dynamics in Flexible WSe2/MoS2 Heterostructures

Understanding and controlling carrier dynamics in two-dimensional (2D) van der Waals heterostructures through strain are crucial for their flexible applications. Here, femtosecond transient absorption spectroscopy is employed to elucidate the interlayer electron transfer and relaxation dynamics under external tensile strains in a WSe2/MoS2 heterostructure. The results show that a modest ∼1% tensile strain can significantly alter the lifetimes of electron transfer and nonradiative electron-hole recombination by >30%. Ab initio non-adiabatic molecular dynamics simulations suggest that tensile strain weakens the electron-phonon coupling, thereby suppressing the transfer and recombination dynamics. Theoretical predictions indicate that strain-induced energy difference increases along the electron transfer path could contribute to the prolongation of the transfer lifetime. A subpicosecond decay process, related to hot-electron cooling, remains almost unaffected by strain. This study demonstrates the potential of tuning interlayer carrier dynamics through external strains, offering insights into flexible optoelectronic device design with 2D materials.

The sp3 Defect Decreases Charge Carrier Lifetime in (8,3) Single-Walled Carbon Nanotubes

A recent experimental approach introduces sp3 defects into single-walled carbon nanotubes (SWNTs) through controlled functionalization with guanine, resulting in a decrease in charge carrier lifetime. However, the physical mechanism behind this phenomenon remains unclear. We employ nonadiabatic molecular dynamics to systematically model the nonradiative recombination process of electron-hole pairs in SWNTs with sp3 defects generated by a guanine molecule. We demonstrate that the introduction of sp3 defects creates an overlapping channel between the highest occupied (HOMO) and lowest unoccupied molecular orbital (LUMO), significantly enhancing the nonadiabatic (NA) coupling and leading to a 4.7-fold acceleration in charge carrier recombination compared to defect-free SWNTs. The charge carrier recombination slows significantly at a lower temperature (50 K) due to the weakening of the NA coupling. Our results rationalize the accelerated recombination of charge carriers in SWNTs with sp3 defects in experiments and contribute to a deeper understanding of the carrier dynamics in SWNTs.

Intrinsic ferromagnetism in two-dimensional 1T-MX2 monolayers with tunable magnetocrystalline anisotropy

Two-dimensional (2D) ferromagnetic materials with tunable magnetocrystalline anisotropy (MCA) provide unique opportunities for developing the next-generation data-storage and information devices. Herein we systematically investigate the electronic and magnetic properties of the 1T-MX2 (M = Cr, Mn, Fe, Co; X = As, Sb) monolayers, and identify the stable 2D ferromagnets as well as their MCA energies. Notably, the results demonstrate that the biaxial strain and carrier doping effects have a significant influence on their magnetic behaviors. In addition to the robust FM states, three FM monolayers yield tunable MCA depending on the applied strain type and carrier doping values. The dominant contributions to these complicated modifications in MCA are mainly attributed to the strain or carrier doping induced alterations of specific M-derived 3d states, which in turn lead to the changes of their spin-orbit coupling (SOC) energies. These findings show effective approaches to control 2D magnetism and suggest that these 2D FM materials may be promising candidates to design highly efficient memory devices.

Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS2 Is Accelerated by Wrinkling

Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is still unexplored. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and nonadiabatic ab initio molecular dynamics (NAMD) to investigate the ultrafast dynamics of wrinkled multilayer (ML) MoS2 comprising 17 layers. Following 2.41 eV photoexcitation, electronic relaxation at the Γ valley occurs with a time constant of 97 ± 2 fs for wrinkled ML-MoS2 and 120 ± 2 fs for flat ML-MoS2. NAMD shows that wrinkling permits larger amplitude motions of MoS2 layers, relaxes electron-phonon coupling selection rules, perturbs chemical bonding, and increases the electronic density of states. As a result, the nonadiabatic coupling grows and electronic relaxation becomes faster compared to flat ML-MoS2. Our study suggests that the sub-picosecond electronic relaxation dynamics of TMDs is amenable to strain engineering and that applications which require long-lived hot carriers, such as hot-electron-driven light harvesting and photocatalysis, should employ wrinkle-free TMDs.

Prediction and Characterization of Two-Dimensional Zn2VN3

A two-dimensional (2D) monolayer of a novel ternary nitride Zn₂VN₃ is computationally designed, and its dynamical and thermal stability is demonstrated. A synthesis strategy is proposed based on experimental works on production of ternary nitride thin films, calculations of formation and exfoliation energies, and ab initio molecular dynamics simulations. A comprehensive characterization of 2D Zn₂VN₃, including investigation of its optoelectronic and mechanical properties, is conducted. It is shown that 2D Zn₂VN₃ is a semiconductor with an indirect band gap of 2.75 eV and a high work function of 5.27 eV. Its light absorption covers visible and ultraviolet regions. The band gap of 2D Zn₂VN₃ is found to be well tunable by applied strain. At the same time 2D Zn₂VN₃ possesses high stability against mechanical loads, point defects, and environmental impacts. Considering the unique properties found for 2D Zn₂VN₃, it can be used for application in optoelectronic and straintronic nanodevices.

Improved Defect Tolerance and Charge Carrier Lifetime in Tin-Lead Mixed Perovskites: Ab Initio Quantum Dynamics

Simulations by nonadiabatic (NA) molecular dynamics demonstrate that mixing tin with lead in CH₃NH₃PbI₃ can passivate the midgap state created by an interstitial iodine (I_i) via the imposed compressive strain and upshifted valence band maximum, reduce NA coupling by decreasing electron-hole wave functions overlap, and shortens pure-dephasing time by introducing high-frequency phonon modes. Thus, the charge carrier lifetime extends to 3.6 ns due to the significantly reduced nonradiative electron-hole recombination, which is an order of magnitude longer than the I_i-containing CH₃NH₃PbI₃, over 2.5 times longer than the pristine CH₃NH₃PbI₃ (1.4 ns), and even 1.7 times longer than the tin-lead mixed perovskite without the I_i defects (2.1 ns). Tin-lead alloying simultaneously increases the I_i defect formation energy to 0.402 eV from 0.179 eV in CH₃NH₃PbI₃, which effectively enhances defect tolerance by reducing the defect concentration. The study reveals the factors controlling the enhanced performance of tin-lead mixed perovskite solar cells.

Structural Disorder in Higher-Temperature Phases Increases Charge Carrier Lifetimes in Metal Halide Perovskites

Solar cells and optoelectronic devices are exposed to heat that degrades performance. Therefore, elucidating temperature-dependent charge carrier dynamics is essential for device optimization. Charge carrier lifetimes decrease with temperature in conventional semiconductors. The opposite, anomalous trend is observed in some experiments performed with MAPbI₃ (MA = CH₃NH₃⁺) and other metal halide perovskites. Using ab initio quantum dynamics simulation, we establish the atomic mechanisms responsible for nonradiative electron-hole recombination in orthorhombic-, tetragonal-, and cubic MAPbI₃. We demonstrate that structural disorder arising from the phase transitions is as important as the disorder due to heating in the same phase. The carrier lifetimes grow both with increasing temperature in the same phase and upon transition to the higher-temperature phases. The increased lifetime is rationalized by structural disorder that induces partial charge localization, decreases nonadiabatic coupling, and shortens quantum coherence. Inelastic and elastic electron-vibrational interactions exhibit opposite dependence on temperature and phase. The partial disorder and localization arise from thermal motions of both the inorganic lattice and the organic cations and depend significantly on the phase. The structural deformations induced by thermal fluctuations and phase transitions are on the same order as deformations induced by defects, and hence, thermal disorder plays a very important role. Since charge localization increases carrier lifetimes but inhibits transport, an optimal regime maximizing carrier diffusion can be designed, depending on phase, temperature, material morphology, and device architecture. The atomistic mechanisms responsible for the enhanced carrier lifetimes at elevated temperatures provide guidelines for the design of improved solar energy and optoelectronic materials.

Suppressing Oxygen-Induced Deterioration of Metal Halide Perovskites by Alkaline Earth Metal Doping: A Quantum Dynamics Study

Exposure to oxygen undermines stability and charge transport in metal halide perovskites, because molecular oxygen, as well as photogenerated superoxide and peroxide, erodes the perovskite lattice and creates charge traps. We demonstrate that alkaline earth metals passivate the oxygen species in CH₃NH₃PbI₃ by breaking the O-O bond and forming new bonds with the oxygen atoms, shifting the trap states of the antibonding O-O orbitals from inside the bandgap into the bands. In addition to eliminating the oxidizing species and the charge traps, doping with the alkaline earth metals slightly increases the bandgap and partially localizes the electron and hole wavefunctions, weakening the electron-hole and charge-phonon interactions and making the charge carrier lifetimes longer than even those in pristine CH₃NH₃PbI₃. Relative to CH₃NH₃PbI₃ exposed to oxygen and light, the charge carrier lifetime of the passivated CH₃NH₃PbI₃ increases by 2-3 orders of magnitude. The ab initio quantum dynamics simulations demonstrate that alkaline earth metals passivate efficiently not only intrinsic perovskite defects, but also the foreign species, providing a viable strategy to suppress perovskite degradation.

Dual Passivation of Point Defects at Perovskite Grain Boundaries with Ammonium Salts Greatly Inhibits Nonradiative Charge Recombination

Experiments demonstrate that grain boundaries (GBs) exhibit detrimental effect on carrier lifetimes in MAPbI₃ (MA= CH₃NH₃⁺). On the basis of the nonadiabatic (NA) molecular dynamics simulations, we demonstrated that NH₄Cl can simultaneously passivate the common point defects that introduce recombination centers at GBs and accelerate electron-hole recombination but shows small effects in the bulk. The MA interstitial (MA_i) and the substitutional MA to Pb (MA_Pb) in pristine MAPbI₃ leave the band gap and charge recombination rates largely unchanged but create deep electron traps at GBs by separately either distorting inorganic octahedra or creating an I-dimer. Cl^- and NH₄⁺ remove the in-gap states by either restoring the distorted octahedra or destroying the I-dimer. Thus, the band gap recovers to the pristine system, NA coupling decreases, and decoherence accelerates, extending the carrier lifetime even twice longer than MAPbI₃. This study shows that the negative role of GBs can be removed by dually passivating with NH₄Cl.

Dependence between Structural and Electronic Properties of CsPbI3: Unsupervised Machine Learning of Nonadiabatic Molecular Dynamics

Using unsupervised machine learning on the trajectories from a nonadiabatic molecular dynamics simulation with time-dependent Kohn-Sham density functional theory, we elucidated the structural parameters with the largest influence on nonradiative recombination of charge carriers in CsPbI₃, which forms the basis for solar energy and optoelectronic applications. The I-I-I angles between PbI₆ octahedra, followed by the Cs-I distance, have the strongest impact on the bandgap and the nonadiabatic coupling. The importance of the Cs-I distance is unexpected, because Cs does not contribute to electron and hole wave functions. The nonadiabatic coupling is most influenced by static properties, which is also surprising, given its explicit dependence on atomic velocities.

Observation of robust charge transfer under strain engineering in two-dimensional MoS2-WSe2 heterostructures

Strain is one of the effective ways to modulate the band structure of monolayer transition metal dichalcogenides (TMDCs), which has been reported in theoretical and steady-state spectroscopic studies. However, the strain effects on the charge transfer processes in TMDC heterostructures have not been experimentally addressed thus far. Here, we systematically investigate the strain-mediated transient spectral evolutions corresponding to excitons at band-edge and higher energy states for monolayer MoS₂ and monolayer WSe₂. It is demonstrated that Γ and K valleys in monolayer WSe₂ and monolayer MoS₂ present different strain responses, according to the broadband femtosecond pump-probe experimental results. It is further observed that the resulting band offset changes tuned by applied tensile strains in MoS₂-WSe₂ heterostructures would not affect the band-edge electron transfer profiles, where only monolayer WSe₂ is excited. From a flexible optoelectronic applications perspective, the robust charge transfer under strain engineering in TMDC heterostructures is very advantageous.

First-Principles Prediction of Two-Dimensional B3C2P3 and B2C4P2: Structural Stability, Fundamental Properties, and Renewable Energy Applications

The existence of two novel hybrid two-dimensional (2D) monolayers, 2D B₃C₂P₃ and 2D B₂C₄P₂, has been predicted based on the density functional theory calculations. It has been shown that these materials possess structural and thermodynamic stability. 2D B₃C₂P₃ is a moderate band gap semiconductor, while 2D B₂C₄P₂ is a zero band gap semiconductor. It has also been shown that 2D B₃C₂P₃ has a highly tunable band gap under the effect of strain and substrate engineering. Moreover, 2D B₃C₂P₃ produces low barriers for dissociation of water and hydrogen molecules on its surface, and shows fast recovery after desorption of the molecules. The novel materials can be fabricated by carbon doping of boron phosphide and directly by arc discharge and laser ablation and vaporization. Applications of 2D B₃C₂P₃ in renewable energy and straintronic nanodevices have been proposed.

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.

Long-Lived Hot Electron in a Metallic Particle for Plasmonics and Catalysis: Ab Initio Nonadiabatic Molecular Dynamics with Machine Learning

Multiple experiments provide evidence for photovoltaic, catalytic, optoelectronic, and plasmonic processes involving hot, i.e., high energy, electrons in nanoscale materials. However, the mechanisms of such processes remain elusive, because electrons rapidly lose energy by relaxation through dense manifolds of states. We demonstrate a long-lived hot electron state in a Pt nanocluster adsorbed on the MoS₂ substrate. For this purpose, we develop a simulation technique, combining classical molecular dynamics based on machine learning potentials with ab initio nonadiabatic molecular dynamics and real-time time-dependent density functional theory. Choosing Pt₂₀/MoS₂ as a prototypical system, we find frequent shifting of a top atom in the Pt particle occurring on a 50 ps time scale. The distortion breaks particle symmetry and creates unsaturated chemical bonds. The lifetime of the localized state associated with the broken bonds is enhanced by a factor of 3. Hot electrons aggregate near the shifted atom and form a catalytic reaction center. Our findings prove that distortion of even a single atom can have important implications for nanoscale catalysis and plasmonics and provide insights for utilizing machine learning potentials to accelerate ab initio investigations of excited state dynamics in condensed matter systems.

Strain Effects of Vertical Separation and Horizontal Sliding in Commensurate Two-Dimensional Homojunctions

Strain, as an economic yet controllable approach for structural modulation, frequently plays a vital role in the preparation and performance optimization of two-dimensional nanomaterials (TNMs). Here, utilizing first-principles simulations, the analysis of energetics shows that the biaxial stretching and compressing could facilitate the vertical separation and horizontal sliding in graphene (Gr/Gr), hexagonal boron nitride (h-BN/h-BN), and molybdenum disulfide (MoS₂/MoS₂) bilayers. The quantification of electron redistribution between layers confirmed that the shifts of interlayer charge density (ρ_inter-) and its relative values (Δρ_inter-) are responsible for the vertical separation and horizontal sliding facilitated by biaxial strain. More effortless horizontal sliding was enabled by a smoother potential energy surface because a smaller Δρ_inter- can be acquired under compression, whereas more effortless vertical separation followed a more vulnerable surface energy because a lower ρ_inter- occurs under tensile strain. The vertical and horizontal division of strain effect provides a novel idea for further understanding its pivotal roles in strain engineering of commensurate-contact TNMs, such as mechanical exfoliation and solid lubrication.

Control of Charge Carrier Dynamics in Plasmonic Au Films by TiOx Substrate Stoichiometry

Plasmonic excitations in noble metals have many fascinating properties and give rise to a broad range of applications. We demonstrate, using nonadiabatic molecular dynamics combined with time-domain density functional theory, that the chemical composition and stoichiometry of substrates can have a strong influence on charge dynamics. By changing oxygen content in TiO₂, including stoichiometric, oxygen rich, and oxygen poor phases, and Ti metal, one can alter lifetimes of charge carriers in Au by a factor of 5 and control the ratio of electron-to-hole relaxation rates by a factor of 10. Remarkably, a thin TiO_x substrate greatly alters charge carrier properties in much thicker Au films. Such large variations stem from the fact that the Ti and O atoms are much lighter than Au, and their vibrations are much faster at dissipating the energy. The control over a particular charge carrier and an energy range depends on the Au and TiO_x level alignment, and the interfacial interaction strength. These factors are easily influenced by the TiO_x stoichiometry. In particular, oxygen rich and poor TiO₂ can be used to control holes and electrons, respectively, while metallic Ti affects both charge carriers. The detailed atomistic analysis of the interfacial and electron-vibrational interactions generates the fundamental understanding of the properties of plasmonic materials needed to design photovoltaic, photocatalytic, optoelectronic, sensing, nanomedical, and other devices.