Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories

Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices

With the advent of the generation of artificial intelligence (AI) based on big data-processing technologies, next-generation memristor and memristive neuromorphic devices have been actively studied with great interest to overcome the von Neumann bottleneck limits. Among various candidates, halide perovskites (HPs) have been in the spotlight as potential candidates for these devices due to their unique switching characteristics with low energy consumption and flexible integration compatibility across various sources for scalability. We outline the characteristics and operating principles of HP-based memristors and their neuromorphic devices. We explain filamentary- and interface-type switching according to the type of conducting pathway occurring inside the active HP layer and the operating mechanisms depending on the species that make up this conducting pathway. We summarize the types and mechanisms of current changes beneficial for neuromorphic device applications and finally organize various suggested analysis tools and physical models to enable experimental determination of switching mechanisms from various perspectives.

2D Halide Perovskites for High-Performance Resistive Switching Memory and Artificial Synapse Applications

Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high-density, low-cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic properties including large light absorption coefficient, fast ion migration, long carrier diffusion length, low trap density, high defect tolerance. Among MHPs, 2D halide perovskites have exotic layered structure and great environment stability as compared with 3D counterparts. Herein, recent advances of 2D MHPs for the RS memories and artificial synapses realms are comprehensively summarized and discussed, as well as the layered structure properties and the related physical mechanisms are presented. Furthermore, the current issues and developing roadmap for the next-generation 2D MHPs RS memories and artificial synapse are elucidated.

In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

The organic-inorganic halide perovskite has become one of the most promising candidates for next-generation memory devices, i.e. memristors, with excellent performance and solution-processable preparation. Yet, the mechanism of resistive switching in perovskite-based memristors remains ambiguous due to a lack of in situ visualized characterization methods. Here, we directly observe the switching process of perovskite memristors with in situ photoluminescence (PL) imaging microscopy under an external electric field. Furthermore, the corresponding element composition of conductive filaments (CFs) is studied, indicating that the metallic CFs with respect to the activity of the top electrode are essential for device performance. Finally, electrochemical impedance spectroscopy (EIS) is conducted to reveal that the transition of ion states is associated with the formation of metallic CFs. This study provides in-depth insights into the switching mechanism of perovskite memristors, paving a pathway to develop and optimize high-performance perovskite memristors for large-scale applications.

Resistive switching in benzylammonium-based Ruddlesden-Popper layered hybrid perovskites for non-volatile memory and neuromorphic computing

Artificial synapses based on resistive switching have emerged as a promising avenue for brain-inspired computing. Hybrid metal halide perovskites have provided the opportunity to simplify resistive switching device architectures due to their mixed electronic-ionic conduction, yet the instabilities under operating conditions compromise their reliability. We demonstrate reliable resistive switching and synaptic behaviour in layered benzylammonium (BzA) based halide perovskites of (BzA)2PbX4 composition (X = Br, I), showing a transformation of the resistive switching from digital to analog with the change of the halide anion. While (BzA)2PbI4 devices demonstrate gradual set and reset processes with reduced power consumption, the (BzA)2PbBr4 system features a more abrupt switching behaviour. Moreover, the iodide-based system displays excellent retention and endurance, whereas bromide-based devices achieve a superior on/off ratio. The underlying mechanism is attributed to the migration of halide ions and the formation of halide vacancy conductive filaments. As a result, the corresponding devices emulate synaptic characteristics, demonstrating the potential for neuromorphic computing. Such resistive switching and synaptic behaviour highlight (BzA)2PbX4 perovskites as promising candidates for non-volatile memory and neuromorphic computing.

Multifunctional two-dimensional perovskite based solar cells for photodetectors and resistive switching

The escalating interest in low-dimensional perovskites stems from their tunable optoelectronic traits and robust stability. The pursuit of multifaceted optoelectronic devices holds substantial importance for energy-efficient and space-constrained systems. This investigation showcases the realization of multifunctional two-dimensional perovskite solar cells, incorporating transient light detection and resistive switching functions within a single device, achievable by facile external bias adjustments. Serving as a photodetector, the device exhibits commendable self-powered photodetection attributes, including an exceptionally low dark current density of 1 nA mm-2, a remarkable specific detectivity of 7.67 × 1012 Jones, a swift response time of 0.60 μs, and an expansive linear dynamic range of 72 dB. As a memristor, it showcases enduring performance across 4 × 102 cycles, a substantial on/off ratio of 106, and a rapid operation time of less than 1 μs. This endeavor unveils a pioneering avenue for advancing high-performance, air-stable multifunctional two-dimensional perovskite electronics.

Quasi-2D Lead-Tin Perovskite Memory Devices Fabricated by Blade Coating

Two terminal passive devices are regarded as one of the promising candidates to solve the processor-memory bottleneck in the Von Neumann computing architectures. Many different materials are used to fabricate memory devices, which have the potential to act as synapses in future neuromorphic electronics. Metal halide perovskites are attractive for memory devices as they display high density of defects with a low migration barrier. However, to become promising for a future neuromorphic technology, attention should be paid on non-toxic materials and scalable deposition processes. Herein, it is reported for the first time the successful fabrication of resistive memory devices using quasi-2D tin-lead perovskite of composition (BA)2 MA4 (Pb0.5 Sn0.5 )5 I16 by blade coating. The devices show typical memory characteristics with excellent endurance (2000 cycles), retention (105  s), and storage stability (3 months). Importantly, the memory devices successfully emulate synaptic behaviors such as spike-timing-dependent plasticity, paired-pulse facilitation, short-term potentiation, and long-term potentiation. A mix of slow (ionic) transport and fast (electronic) transport (charge trapping and de-trapping) is proven to be responsible for the observed resistive switching behavior.

Interface Engineering Enables Multilevel Resistive Switching in Ultra-Low-Power Chemobrionic Copper Silicate

Memristor is assuming prominence due to its exceptionally low power consumption, adaptable, and parallel signal processing capabilities that address the limitations of the von Neumann architecture to meet the growing demand for advanced technologies such as artificial intelligence, Internet of Things (IoTs), and neuromorphic computation. In this work, we demonstrate resistive switching in copper silicate-based hollow tube-forming self-organized membrane structures belonging to the category of chemobrionics or chemical gardens to demonstrate cost-effective and highly efficient memristor devices. The device architecture is configured as ITO/PEDOT:PSS/active layer (copper silicate)/PMMA/Ag, an arrangement that serves to stabilize current-voltage hysteresis and exhibit a low SET voltage ∼0.2 V with a 0.8 nJ power consumption while manifesting robust data endurance and multilevel resistive switching. The inherent self-rectifying behavior, characterized by a high rectification ratio of 60, underscores the potential utility of these devices across a spectrum of electronic applications. To emulate the functionality of biological synapses, fundamental synaptic characteristics are assessed, including paired-pulse facilitation (PPF) and potentiation and depression (P&D). We validate the potential of copper silicate chemical garden-based memristor devices for applications that require real-time synaptic processing. Importantly, the fabrication of these devices was accomplished through a comprehensive solution-based, low-temperature process conducted under ambient environmental conditions, obviating the need for specialized glovebox facilities.

Photoinduced Transition from Quasi-Two-Dimensional Ruddlesden-Popper to Three-Dimensional Halide Perovskites for the Optical Writing of Multicolor and Light-Erasable Images

Optical data storage, information encryption, and security labeling technologies require materials that exhibit local, pronounced, and diverse modifications of their structure-dependent optical properties under external excitation. Herein, we propose and develop a novel platform relying on lead halide Ruddlesden-Popper phases that undergo a light-induced transition toward bulk perovskite and employ this phenomenon for the direct optical writing of multicolor patterns. This transition causes the weakening of quantum confinement and hence a reduction in the band gap. To extend the color gamut of photoluminescence, we use mixed-halide compositions that exhibit photoinduced halide segregation. The emission of the films can be tuned across the range of 450-600 nm. Laser irradiation provides high-resolution direct writing, whereas continuous-wave ultraviolet exposure is suitable for recording on larger scales. The luminescent images created on such films can be erased during the visualization process. This makes the proposed writing/erasing platform suitable for the manufacturing of optical data storage devices and light-erasable security labels.

Filament-free memristors for computing

Memristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal-oxide-semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors.

Resistive switching transparent SnO2 thin film sensitive to light and humidity

Designing and manufacturing memristor devices with simple and less complicated methods is highly promising for their future development. Here, an Ag/SnO2/FTO(F-SnO2) structure is used through the deposition of the SnO2 layer attained by its sol via the air-brush method on an FTO substrate. This structure was investigated in terms of the memristive characteristics. The negative differential resistance (NDR) effect was observed in environment humidity conditions. In this structure, valance change memory and electrometalization change memory mechanisms cause the current peak in the NDR region by forming an OH- conductive filament. In addition, the photoconductivity effect was found under light illumination and this structure shows the positive photoconductance effect by increasing the conductivity. Memristivity was examined for up to 100 cycles and significant stability was observed as a valuable advantage for neuromorphic computing. Our study conveys a growth mechanism of an optical memristor that is sensitive to light and humidity suitable for sensing applications.

On the Mechanism of Solvents Catalyzed Structural Transformation in Metal Halide Perovskites

Metal halide perovskites show the capability of performing structural transformation, allowing the formation of functional heterostructures. Unfortunately, the elusive mechanism governing these transformations limits their technological application. Herein, the mechanism of 2D-3D structural transformation is unraveled as catalyzed by solvents. By combining a spatial-temporal cation interdiffusivity simulation with experimental findings, it is validated that, protic solvents foster the dissociation degree of formadinium iodide (FAI) via dynamic hydrogen bond, then the stronger hydrogen bond of phenylethylamine (PEA) cation with selected solvents compared to dissociated FA cation facilitates 2D-3D transformation from (PEA)2 PbI4 to FAPbI3 . It is discovered that, the energy barrier of PEA out-diffusion and the lateral transition barrier of inorganic slab are diminished. For 2D films the protic solvents catalyze grain centers (GCs) and grain boundaries (GBs) transforme into 3D phases and quasi-2D phases, respectively. While in the solvent-free case, GCs transform into 3D-2D heterostructures along the direction perpendicular to the substrate, and most GBs evolve into 3D phases. Finally, memristor devices fabricated using the transformed films uncover that, GBs composed of 3D phases are more prone to ion migration. This work elucidates the fundamental mechanism of structural transformation in metal halide perovskites, allowing their use to fabricate complex heterostructures.

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure

The two-dimensional layered material CuInP₂S₆ (CIPS) has attracted significant research attention due to its nontrivial physical properties, including room-temperature ferroelectricity at the ultrathin limit and substantial ionic conductivity. Despite many efforts to control its ionic conductance and develop electronic devices, such as memristors, improving the stability of these devices remains a challenge. This work presents a highly stable threshold-switching device based on the Cu/CIPS/graphene heterostructure, achieved after a comprehensive investigation of the activation of Cu's ionic conductivity. The device exhibits exceptional threshold-switching performance, including good cycling endurance, a high on/off ratio of up to 10⁴, low operation voltages, and an ultrasmall subthreshold swing of less than 1.8 mV/decade for the resistance-switching process. Through temperature-dependent electrical and Raman spectroscopy measurements, the stable resistive-switching mechanism is interpreted with a drifting and diffusion model of Cu ions under the electric field, rather than the conventional conducting filament mechanism. These results make the layered ferroionic CIPS material a promising candidate for information storage devices, demonstrating a compelling approach to achieving high-performance threshold-switching memristor devices.

Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process

With the increasing demand for artificially intelligent hardware systems for brain-inspired in-memory and neuromorphic computing, understanding the underlying mechanisms in the resistive switching of memristor devices is of paramount importance. Here, we demonstrate a two-step resistive switching set process involving a complex interplay among mobile halide ions/vacancies (I^-/V_I⁺) and silver ions (Ag⁺) in perovskite-based memristors with thin undoped buffer layers. The resistive switching involves an initial gradual increase in current associated with a drift-related halide migration within the perovskite bulk layer followed by an abrupt resistive switching associated with diffusion of mobile Ag⁺ conductive filamentary formation. Furthermore, we develop a dynamical model that explains the characteristic I-V curve that helps to untangle and quantify the switching regimes consistent with the experimental memristive response. This further insight into the two-step set process provides another degree of freedom in device design for versatile applications with varying levels of complexity.

Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications

Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.

Electric Field Modulation of 2D Perovskite Excitonics

Multiquantum-well (MQW) perovskite is one of the forerunners in high-efficiency perovskite LED (PeLEDs) research. Despite the rapid inroads, PeLEDs suffer from the pertinent issue of efficiency decrease with increasing brightness, commonly known as "efficiency roll-off". The underlying mechanisms are presently an open question. Herein, we explicate the E-field effects on the exciton states in the archetypal MQW perovskite (C₆H₅C₂H₄NH₃)₂PbI₄, or PEPI, in a device-like architecture using field-assisted transient spectroscopy and theoretical modeling. The applied E-field results in a complex interplay of spectral blueshifts and enhancement/quenching of the different exciton modes. The former originates from the DC Stark shift, while the latter is attributed to the E-field modulation of the transfer rates between bright/dark exciton modes. Importantly, our findings uncover crucial insights into the photophysical processes under E-field modulation contributing to efficiency roll-off in MQW PeLEDs. Electrical modulation of exciton properties presents exciting possibilities for signal processing devices.

Interfacial Resistive Switching by Multiphase Polarization in Ion-Intercalation Nanofilms

Nonvolatile resistive-switching (RS) memories promise to revolutionize hardware architectures with in-memory computing. Recently, ion-interclation materials have attracted increasing attention as potential RS materials for their ion-modulated electronic conductivity. In this Letter, we propose RS by multiphase polarization (MP) of ion-intercalated thin films between ion-blocking electrodes, in which interfacial phase separation triggered by an applied voltage switches the electron-transfer resistance. We develop an electrochemical phase-field model for simulations of coupled ion-electron transport and ion-modulated electron-transfer rates and use it to analyze the MP switching current and time, resistance ratio, and current-voltage response. The model is able to reproduce the complex cyclic voltammograms of lithium titanate (LTO) memristors, which cannot be explained by existing models based on bulk dielectric breakdown. The theory predicts the achievable switching speeds for multiphase ion-intercalation materials and could be used to guide the design of high-performance MP-based RS memories.

Metal Halide Perovskite-Based Memristors for Emerging Memory Applications

There is an increased demand for next-generation memory devices with high density and fast operation speed to replace conventional memory devices. Memristors are promising candidates for next-generation memory devices because of their scalability, stable data retention, low power consumption, and fast operation. Among the various types of memristors, halide perovskites exhibit potential as emerging materials for memristors by using hysteresis based on the movement of defects or ions in halide perovskites. However, research on the implementation of perovskite materials as memristors is in its early stages; some challenges and problems must be solved to enable the practical application of halide perovskites for next-generation memory devices. From this perspective, we highlight the recent progress in memristors that use halide perovskites. Moreover, we introduce a strategy to enhance the performance and analyze the operation mechanism of memory devices that use halide perovskites. Finally, we summarize the challenges in the development of device technology to use halide perovskites in next-generation memory devices.

Dynamic Instability and Time Domain Response of a Model Halide Perovskite Memristor for Artificial Neurons

Memristors are candidate devices for constructing artificial neurons, synapses, and computational networks for brainlike information processing and sensory-motor autonomous systems. However, the dynamics of natural neurons and synapses are challenging and cannot be well reproduced with standard electronic components. Halide perovskite memristors operate by mixed ionic-electronic properties that may lead to replicate the live computation elements. Here we explore the dynamical behavior of a halide perovskite memristor model to evaluate the response to a step perturbation and the self-sustained oscillations that produce analog neuron spiking. As the system contains a capacitor and a voltage-dependent chemical inductor, it can mimic an action potential in response to a square current pulse. Furthermore, we discover a property that cannot occur in the standard two-dimensional model systems: a three-dimensional model shows a dynamical instability that produces a spiking regime without the need for an intrinsic negative resistance. These results open a new pathway to create spiking neurons without the support of electronic circuits.

Halide Perovskites for Resistive Switching Memory

Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture. In particular, halide perovskite RRAMs have attracted widespread attention in recent years because of their ionic migration nature and excellent photoelectric properties. This Perspective first provides a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications. Moreover, this Perspective attempts to detail the challenges, such as the quality of halide perovskite films, the compatible processing of device fabrication, the reliability of memory performance, and clarification of the switching mechanism, and further discusses how the outstanding challenges of halide perovskite RRAMs could be met in future research.

Impedance Spectroscopy of Metal Halide Perovskite Solar Cells from the Perspective of Equivalent Circuits

Impedance spectroscopy (IS) provides a detailed understanding of the dynamic phenomena underlying the operation of photovoltaic and optoelectronic devices. Here we provide a broad summary of the application of IS to metal halide perovskite materials, solar cells, electrooptic and memory devices. IS has been widely used to characterize perovskite solar cells, but the variability of samples and the presence of coupled ionic-electronic effects form a complex problem that has not been fully solved yet. We summarize the understanding that has been obtained so far, the basic methods and models, as well as the challenging points still present in this research field. Our approach emphasizes the importance of the equivalent circuit for monitoring the parameters that describe the response and providing a physical interpretation. We discuss the possibilities of models from the general perspective of solar cell behavior, and we describe the specific aspects and properties of the metal halide perovskites. We analyze the impact of the ionic effects and the memory effects, and we describe the combination of light-modulated techniques such as intensity modulated photocurrent spectroscopy (IMPS) for obtaining more detailed information in complex cases. The transformation of the frequency to time domain is discussed for the consistent interpretation of time transient techniques and the prediction of features of current-voltage hysteresis. We discuss in detail the stability issues and the occurrence of transformations of the sample coupled to the measurements.

One-Dimensional (NH=CINH3)3PbI5 Perovskite for Ultralow Power Consumption Resistive Memory

Organic-inorganic hybrid perovskites (OIHPs) have proven to be promising active layers for nonvolatile memories because of their rich abundance in earth, mobile ions, and adjustable dimensions. However, there is a lack of investigation on controllable fabrication and storage properties of one-dimensional (1D) OIHPs. Here, the growth of 1D (NH=CINH3)3PbI5 ((IFA)3PbI5) perovskite and related resistive memory properties are reported. The solution-processed 1D (IFA)3PbI5 crystals are of well-defined monoclinic crystal phase and needle-like shape with the length of about 6 mm. They exhibit a wide bandgap of 3 eV and a high decomposition temperature of 206°C. Moreover, the (IFA)3PbI5 films with good uniformity and crystallization were obtained using a dual solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). To study the intrinsic electric properties of this anisotropic material, we constructed the simplest memory cell composed of only Au/(IFA)3PbI5/ITO, contributing to a high-compacted device with a crossbar array device configuration. The resistive random access memory (ReRAM) devices exhibit bipolar current-voltage (I-V) hysteresis characteristics, showing a record-low power consumption of ~0.2 mW among all OIHP-based memristors. Moreover, our devices own the lowest power consumption and "set" voltage (0.2 V) among the simplest perovskite-based memory devices (inorganic ones are also included), which are no need to require double metal electrodes or any additional insulating layer. They also demonstrate repeatable resistance switching behaviour and excellent retention time. We envision that 1D OIHPs can enrich the low-dimensional hybrid perovskite library and bring new functions to low-power information devices in the fields of memory and other electronics applications.

Advances in Flexible Memristors with Hybrid Perovskites

Hybrid organic-inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also for use in healthcare technology and the Internet of Things (IoT) because of their unique properties: low weight, flexibility, compatibility, stretchability, and low power consumption. In this Perspective, we review the recent advances of various aspects of flexible memristors focusing on the selection of the flexible substrates, materials, interfaces, several resistive switching mechanisms, and different methodologies of perovskite growth. The current state of the art of the memristor as an artificial synapse, light-induced resistive switching, and logic gates is comprehensively and systematically reviewed. Finally, we briefly discuss the stability factors of perovskites and present the conclusion with a broad outlook on the progress and challenges in the field of perovskite-based flexible memristors.

Impedance Spectroscopy Dynamics of Biological Neural Elements: From Memristors to Neurons and Synapses

Understanding the operation of neurons and synapses is essential to reproducing biological computation. Building artificial neuromorphic networks opens the door to a new generation of faster and low-energy-consuming electronic circuits for computation. The main candidates to imitate the natural biocomputation processes, such as the generation of action potentials and spiking, are memristors. Generally, the study of the performance of material neuromorphic elements is done by the analysis of time transient signals. Here, we present an analysis of neural systems in the frequency domain by small-amplitude ac impedance spectroscopy. We start from the constitutive equations for the conductance and memory effect, and we derive and classify the impedance spectroscopy spectra. We first provide a general analysis of a memristor and demonstrate that this element can be expressed as a combination of simple parts. In particular, we derive a basic equivalent circuit where the memory effect is represented by an RL branch. We show that this ac model is quite general and describes the inductive/negative capacitance response in many systems such as halide perovskites and organic LEDs. Thereafter, we derive the impedance response of the integrate-and-fire exponential adaptative neuron model that introduces a negative differential resistance and a richer set of spectra. On the basis of these insights, we provide an interpretation of the varied spectra that appear in the more general Hodgkin-Huxley neuron model. Our work provides important criteria to determine the properties that must be found in material realizations of neuronal elements. This approach has the great advantage that the analysis of highly complex phenomena can be based purely on the shape of experimental impedance spectra, avoiding the need for specific modeling of rather involved material processes that produce the required response.

Quasi-2D Halide Perovskite Memory Device Formed by Acid-Base Binary Ligand Solution Composed of Oleylamine and Oleic Acid

Organometal halide perovskite materials are receiving significant attention for the fabrication of resistive-switching memory devices based on their high stability, low power consumption, rapid switching, and high ON/OFF ratios. In this study, we synthesized 3D FAPbBr₃ and quasi-2D (RNH₃)₂(FA)₁Pb₂Br₇ films using an acid-base binary ligand solution composed of oleylamine (OlAm) and oleic acid in toluene. The quasi-2D (RNH₃)₂(FA)₁Pb₂Br₇ films were synthesized by controlling the protonated OlAm (RNH₃⁺) solution concentration to replace FA⁺ cations with large organic RNH₃⁺ cations from 3D FAPbBr₃ perovskites. The quasi-2D (RNH₃)₂(FA)₁Pb₂Br₇ devices exhibited nonvolatile write-once read-many (WORM) memory characteristics, whereas the 3D FAPbBr₃ only exhibited hysteresis behavior. Analysis of the 3D FAPbBr₃ device indicated operation in the trap-limited space-charge-limited current region. In contrast, quasi-2D (RNH₃)₂(FA)₁Pb₂Br₇ devices provide low trap density that is completely filled by injected charge carriers and then subsequently form conductive filaments (CFs) to operate as WORM devices. Nanoscale morphology analysis and an associated current mapping study based on conductive atomic force microscopy measurements revealed that perovskite grain boundaries serve as major channels for high current, which may be correlated with the conductive low-resistive-switching behavior and formation of CFs in WORM devices.

Theory of Hysteresis in Halide Perovskites by Integration of the Equivalent Circuit

Perovskite solar cells show a number of internal electronic-ionic effects that produce hysteresis in the current-voltage curves and a dependence of the temporal response on the conditions of the previous stimulus applied to the sample. There are many models and explanations in the literature, but predictive methods that may lead to an assessment of the solar cell behavior based on independent measurements are needed. Here, we develop a method to predict time domain response starting from the frequency domain response measured by impedance spectroscopy over a collection of steady states. The rationale of the method is to convert the impedance response into a set of differential equations, in which the internal state variables emerge naturally and need not be predefined in terms of a physical (drift/diffusion/interfaces) model. Then, one solves (integrates) the evolution for a required external perturbation such as voltage sweep at a constant rate (cyclic voltammetry). Using this method, we solve two elementary but relevant equivalent circuit models for perovskite solar cells and memristors, and we show the emergence of hysteresis in terms of the relevant time and energy constants that can be fully obtained from impedance spectroscopy. We demonstrate quantitatively a central insight in agreement with many observations: regular hysteresis is capacitive, and inverted hysteresis is inductive. Analysis of several types of perovskite solar cells shows excellent correlation of the type of equivalent circuit and the observed hysteresis. A new phenomenon of transformation from capacitive to inductive hysteresis in the course of the current-voltage curve is reported.

Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires

With strikingly high speed, data retention ability and storage density, resistive RAMs have emerged as a forerunning nonvolatile memory. Here we developed a Re-RAM with ultra-high density array of monocrystalline perovskite quantum wires (QWs) as the switching matrix with a metallic silver conducting pathway. The devices demonstrated high ON/OFF ratio of ∼10⁷ and ultra-fast switching speed of ∼100 ps which is among the fastest in literature. The devices also possess long retention time of over 2 years and record high endurance of ∼6 × 10⁶ cycles for all perovskite Re-RAMs reported. As a concept proof, we have also successfully demonstrated a flexible Re-RAM crossbar array device with a metal-semiconductor-insulator-metal design for sneaky path mitigation, which can store information with long retention. Aggressive downscaling to ∼14 nm lateral dimension produced an ultra-small cell effectively having 76.5 nm² area for single bit storage. Furthermore, the devices also exhibited unique optical programmability among the low resistance states.

Refining the Negative Differential Resistance Effect in a TiOx-Based Memristor

The N-type negative difference resistance (NDR) is characterized by the peak/valley voltage (V_p/V_v) and the corresponding current (I_p/I_v). The N-type NDR is observed in the resistive switching (RS) memory device of Ag|TiO₂|F-doped SnO₂ at room temperature. After the TiO₂ film is equipped with a nanoporous array, the ∼1.2 V gap voltage between V_p and V_v is effectively downscaled to ∼0.5 V, and the gap current of ∼7.23 mA between I_p and I_v is improved to ∼30 mA. It demonstrates that a lower power consumption and faster switching time of the NDR can be obtained in the memristor. Compensations and synergies among the nanoscale conduction filaments (OH^-, Ag⁺, and V_o) are responsible for the refining NDR behavior in our devices. This work provides an efficient method to construct a high-performance N-type NDR effect at room temperature and gives a new horizon on the coexistence of this type of NDR effect and RS memory behaviors.

Halide Perovskites: A New Era of Solution-Processed Electronics

Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.

Bifunctional Silver-Doped ZnO for Reliable and Stable Organic-Inorganic Hybrid Perovskite Memory

Halide perovskites (HPs) have possible uses as an active layer for emerging memory devices due to their low operation voltage and high on/off ratio. However, HP-based memory devices, which are operated by the formation of a conductive filament, still suffer from reliability issues such as limited endurance and stability. To solve the problems, it is essential to control filament formation in the active layer. Here, we present nanoscale HP-based memory devices that have a Ag-doped ZnO (AZO) layer on HP. The AZO layer is used as a Ag ion reservoir for filament formation in HP, and this reservoir enables control of filament formation. By adjusting the Ag concentration in the AZO layer, the controlled filament composed of Ag can be formed; as a result, the memory device has excellent endurance (3 × 10⁴ cycles) compared to the device that uses a Ag electrode instead of an AZO layer (4 × 10² cycles). Also, an AZO layer can passivate HP, so the device operates stably in ambient air for 15 days with a high on/off ratio (10⁶). These results demonstrate that the introduction of the AZO layer can improve the reliability of HP-based memory devices for high-density applications.

Interface-Driven Multifunctionality in Two-Dimensional TiO2 Nanosheet/Poly(Dimercaptothiadiazole-Triazine) Hybrid Resistive Random Access Memory Device

Interface-driven multifunctional facets are gearing up in the field of science and technology. Here, we present the interface-activated resistive switching (RS), negative differential resistance, diode behavior, and ultraviolet (UV) light sensing in nanosheet-based hybrid devices. A hybrid device i.e., titanium dioxide nanosheet (TiO₂-NS)/poly(dimercaptothiadiazole-triazine)[Poly(DMcT-CC)] is fabricated by spin coating Poly(DMcT-CC) polymer on hydrothermally as-grown TiO₂-NS. The pristine devices of both materials show either small or no magnitude of RS, but the hybrid device shows highly enhanced RS of nearly four orders due to the formation of a p-n junction at the NS/polymer interface. The resistive random access memory feature appears to be more prominent in the hybrid device i.e., high and low current states are found to be stable in repetitive cycles since the interface acts as a trapping center for the carriers. The UV sensing ability of the hybrid device has been demonstrated by a threefold increment in a current at 60 mV. The impedance spectroscopy has been employed to show that the multifunctional features are directly associated to the NS/polymer interface, which deduce that the manipulation of such interfaces can pave the way for developing the hybrid structures.

Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi2FeCrO6 Thin Film

As an important method to further improve the storage density of resistive memory, multistage resistive switching devices have become an important research direction. However, no stable and controllable multistage resistive switching device has been prepared, and the working mechanism is still unclear. Here, a sandwich-structured device is simply prepared by spin coating, with the work layer is the Bi₂FeCrO₆ thin film. The device can realize bidirectional controllable multistage resistive switching behavior, the biggest on/off ratio is 10⁴, and it can maintain stability without attenuation at 100 times slow loop and 10⁴ times pulse cycle. The analyzes showed that the charged ions formed by defects in the device migrated under the action of an external electric field lead to the Schottky barrier height reversible changed. Which is the key to cause multistage resistive switching behavior. This work is the first report about the voltage control of bidirectional adjustable multistage resistive switching behavior in the Bi₂FeCrO₆ thin film. The principle of generation is analyzed, and important ideas and insights are provided for the preparation and treatment of related multistage resistive problems.

Beyond Impedance Spectroscopy of Perovskite Solar Cells: Insights from the Spectral Correlation of the Electrooptical Frequency Techniques

Small perturbation techniques have proven to be useful tools for the investigation of perovskite solar cells. A correct interpretation of the spectra given by impedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy (IMPS), and intensity-modulated photovoltage spectroscopy (IMVS) is key for the understanding of device operation. The utilization of a correct equivalent circuit to extract real parameters is essential to make this good interpretation. In this work, we present an equivalent circuit, which is able to reproduce the general and the exotic behaviors found in impedance spectra. From the measurements, we demonstrate that the midfrequency features that may appear to depend on the active layer thickness, and we also prove the spectral correlation of the three techniques that has been suggested theoretically.

Heavy Water Additive in Formamidinium: A Novel Approach to Enhance Perovskite Solar Cell Efficiency

Heavy water or deuterium oxide (D₂ O) comprises deuterium, a hydrogen isotope twice the mass of hydrogen. Contrary to the disadvantages of deuterated perovskites, such as shorter recombination lifetimes and lower/invariant efficiencies, the serendipitous effect of D₂ O as a beneficial solvent additive for enhancing the power conversion efficiency (PCE) of triple-A cation (cesium (Cs)/methylammonium (MA)/formaminidium (FA)) perovskite solar cells from ≈19.2% (reference) to 20.8% (using 1 vol% D₂ O) with higher stability is reported. Ultrafast optical spectroscopy confirms passivation of trap states, increased carrier recombination lifetimes, and enhanced charge carrier diffusion lengths in the deuterated samples. Fourier transform infrared spectroscopy and solid-state NMR spectroscopy validate the N-H₂ group as the preferential isotope exchange site. Furthermore, the NMR results reveal the induced alteration of the FA to MA ratio due to deuteration causes a widespread alteration to several dynamic processes that influence the photophysical properties. First-principles density functional theory calculations reveal a decrease in PbI₆ phonon frequencies in the deuterated perovskite lattice. This stabilizes the PbI₆ structures and weakens the electron-LO phonon (Fröhlich) coupling, yielding higher electron mobility. Importantly, these findings demonstrate that selective isotope exchange potentially opens new opportunities for tuning perovskite optoelectronic properties.

Quo vadis, perovskite emitters?

Halide perovskites hold great promise for next generation printable optoelectronic devices. Within a decade of their debut in photovoltaics, these amazing materials proliferate beyond solar cells to applications such as light-emitting devices, lasers, radiation detectors, and memristors. Such versatility stems from perovskites' favorable optoelectronic properties that are highly exceptional for a facile solution-processed system. Halide perovskite emitters have made significant inroads, in particular, perovskite light emitting device (PeLED) efficiencies have risen from <1% to >20% within 5 years, and perovskite continuous wave amplified spontaneous emission has also been demonstrated recently. This perspective distills the photophysical mechanisms underpinning the various approaches in enhancing their radiative efficiencies. Selected works are highlighted to detail the milestones and to chart the direction the field is heading. Challenges and opportunities for solid-state PeLEDs are discussed. A clear understanding of their basic photophysics and structure-function relations holds the key to rationalizing strategies and streamlining efforts to realize high efficiency PeLEDs and perovskite lasers.