Functional Metal Oxide Ink Systems for Drop-on-Demand Printed Thin-Film Transistors

Printable Epsilon-Type Structure Transistor Arrays with Highly Reliable Physical Unclonable Functions

Printed electronics promises to drive the future data-intensive technologies, with its potential to fabricate novel devices over a large area with low cost on nontraditional substrates. In these emerging technologies, there exists a large digital information flow, which requires secure communication and authentication. Physical unclonable functions (PUFs) offer a promising built-in hardware-security system comparable to biometrical data, which can be constructed by device-specific intrinsic variations in the additive manufacturing process of active devices. However, printed PUFs typically exploit the inherent variation in layer thickness and roughness of active devices. The current in devices with enough significant changes to increase the robustness to external environment noise is still a challenge. Here, printable epsilon-type-structure indium tin oxide transistor arrays are demonstrated to construct high-reliability PUFs by modifying the coffee-ring structure. The epsilon-type structure improves the printing scalability, film quality, and device reliability. Furthermore, the print-induced uncertainty along the channel thickness and length can lead to changes in the carrier concentration. Notably, the randomly distributed printing droplets in a small area significantly increase this uncertainty. As a result, the PUFs exhibit near-ideal uniformity, uniqueness, randomness, and reliability. Additionally, the PUFs are resilient against machine-learning-based attacks with a prediction accuracy of only 55% without postprocessing.

Morphological Regulation of Printed Low-Temperature Conductive Ink

The unbalanced evaporation of solvents in low-temperature sintered inks for printed electronics leads to a series of problems in the actual printing process, including printed pattern distortion, surface cracking, and the coffee ring effect, which has become a serious obstacle to this technique. Here, we present a comprehensive investigation of the influence of the solvent composition, environmental, and sintering conditions on the complicated pattern formation process of reactive silver inks. The results first showed that only inks with a certain wettability of solvents could form well-defined patterns. Then, the solvent composition and ambient humidity can be adjusted to balance the nonequilibrium evaporative flow within the liquid and thus to obtain a flat liquid film. Combined with the rapid UV sintering process, the particle size, porosity, and roughness could be controlled to produce dense and homogeneous silver films. Finally, we successfully printed silver electrodes with a smooth and dense surface (R_qs ∼ 21 nm in 0.8 × 0.8 mm² area and less than 1% porosity) under an optimized relative humidity (RH) of 50-60% at room temperature with the solvent composition of IPA (isopropanol)/2,3-BD (2,3-butanediol) = 8:2. In addition, we also demonstrated high-performance Pr-IZO (praseodymium-doped indium-zinc oxide) thin film transistors (TFTs) with a mobility (μ_sat) of 2.14 cm²/V/s and I_on/I_off ratio of over 10⁷ using source-drain electrodes printed under optimized conditions.

Inkjet-Printed Electron Transport Layers for Perovskite Solar Cells

Inkjet printing emerged as an alternative deposition method to spin coating in the field of perovskite solar cells (PSCs) with the potential of scalable, low-cost, and no-waste manufacturing. In this study, the materials TiO₂, SrTiO₃, and SnO₂ were inkjet-printed as electron transport layers (ETLs), and the PSC performance based on these ETLs was optimized by adjusting the ink preparation methods and printing processes. For the mesoporous ETLs inkjet-printed from TiO₂ and SrTiO₃ nanoparticle inks, the selection of solvents for dispersing nanoparticles was found to be important and a cosolvent system is beneficial for the film formation. Meanwhile, to overcome the low current density and severe hysteresis in SrTiO₃-based devices, mixed mesoporous SrTiO₃/TiO₂ ETLs were also investigated. In addition, inkjet-printed SnO₂ thin films were fabricated by using a cosolvent system and the effect of the SnO₂ ink concentrations on the device performance was investigated. In comparison with PSCs based on TiO₂ and SrTiO₃ ETLs, the SnO₂-based devices offer an optimal power conversion efficiency (PCE) of 17.37% in combination with a low hysteresis. This work expands the range of suitable ETL materials for inkjet-printed PSCs and promotes the commercial applications of inkjet printing techniques in PSC manufacturing.

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.

Recent Developments in Flexible Transparent Electrode

With the rapid development of flexible electronic devices (especially flexible LCD/OLED), flexible transparent electrodes (FTEs) with high light transmittance, high electrical conductivity, and excellent stretchability have attracted extensive attention from researchers and businesses. FTEs serve as an important part of display devices (touch screen and display), energy storage devices (solar cells and super capacitors), and wearable medical devices (electronic skin). In this paper, we review the recent progress in the field of FTEs, with special emphasis on metal materials, carbon-based materials, conductive polymers (CPs), and composite materials, which are good alternatives to the traditional commercial transparent electrode (i.e., indium tin oxide, ITO). With respect to production methods, this article provides a detailed discussion on the performance differences and practical applications of different materials. Furthermore, major challenges and future developments of FTEs are also discussed.