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Tang X, Hao Q, Hou X, Lan L, Li M, Yao L, Zhao X, Ni Z, Fan X, Qiu T. Exploring and Engineering 2D Transition Metal Dichalcogenides toward Ultimate SERS Performance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312348. [PMID: 38302855 DOI: 10.1002/adma.202312348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2023] [Revised: 01/23/2024] [Indexed: 02/03/2024]
Abstract
Surface-enhanced Raman spectroscopy (SERS) is an ultrasensitive surface analysis technique that is widely used in chemical sensing, bioanalysis, and environmental monitoring. The design of the SERS substrates is crucial for obtaining high-quality SERS signals. Recently, 2D transition metal dichalcogenides (2D TMDs) have emerged as high-performance SERS substrates due to their superior stability, ease of fabrication, biocompatibility, controllable doping, and tunable bandgaps and excitons. In this review, a systematic overview of the latest advancements in 2D TMDs SERS substrates is provided. This review comprehensively summarizes the candidate 2D TMDs SERS materials, elucidates their working principles for SERS, explores the strategies to optimize their SERS performance, and highlights their practical applications. Particularly delved into are the material engineering strategies, including defect engineering, alloy engineering, thickness engineering, and heterojunction engineering. Additionally, the challenges and future prospects associated with the development of 2D TMDs SERS substrates are discussed, outlining potential directions that may lead to significant breakthroughs in practical applications.
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Affiliation(s)
- Xiao Tang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Qi Hao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xiangyu Hou
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- Department of Chemistry, National University of Singapore, Singapore, 117542, Singapore
| | - Leilei Lan
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- School of Mechanics and Optoelectronic Physics, Anhui University of Science and Technology, Huainan, 232001, China
| | - Mingze Li
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Lei Yao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xing Zhao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Zhenhua Ni
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xingce Fan
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Teng Qiu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
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Shinde PA, Ariga K. Two-Dimensional Nanoarchitectonics for Two-Dimensional Materials: Interfacial Engineering of Transition-Metal Dichalcogenides. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:18175-18186. [PMID: 38047629 DOI: 10.1021/acs.langmuir.3c02929] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
Transition-metal dichalcogenides (TMDs) have attracted increasing attention in fundamental studies and technological applications owing to their atomically thin thickness, expanded interlayer distance, motif band gap, and phase-transition ability. Even though TMDs have a wide variety of material assets from semiconductor to semimetallic to metallic, the materials with fixed features may not show excellence for precise application. As a result of exclusive crystalline polymorphs, physical and chemical assets of TMDs can be efficiently modified via various approaches of interface nanoarchitectonics, including heteroatom doping, heterostructure, phase engineering, reducing size, alloying, and hybridization. With modified properties, TMDs become interesting materials in diverse fields, including catalysis, energy, electronics, transistors, and optoelectronics.
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Affiliation(s)
- Pragati A Shinde
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan
- Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
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