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Bai J, Jiang Y, Tan F, Zhu P, Li X, Xiong X, Wang Z, Song T, Xie B, Yang Y, Han J. Electrochemical biosensor for sensitive detection of SARS-CoV-2 gene fragments using Bi 2Se 3 topological insulator. Bioelectrochemistry 2024; 159:108748. [PMID: 38824746 DOI: 10.1016/j.bioelechem.2024.108748] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 05/20/2024] [Accepted: 05/24/2024] [Indexed: 06/04/2024]
Abstract
In this study, we have designed an electrochemical biosensor based on topological material Bi2Se3 for the sensitive detection of SARS-CoV-2 in the COVID-19 pandemic. Flake-shaped Bi2Se3 was obtained directly from high-quality single crystals using mechanical exfoliation, and the single-stranded DNA was immobilized onto it. Under optimal conditions, the peak current of the differential pulse voltammetry method exhibited a linear relationship with the logarithm of the concentration of target-complementary-stranded DNA, ranging from 1.0 × 10-15 to 1.0 × 10-11 M, with a detection limit of 3.46 × 10-16 M. The topological material Bi2Se3, with Dirac surface states, enhanced the signal-to-interference plus noise ratio of the electrochemical measurements, thereby improving the sensitivity of the sensor. Furthermore, the electrochemical sensor demonstrated excellent specificity in recognizing RNA. It can detect complementary RNA by amplifying and transcribing the initial DNA template, with an initial DNA template concentration ranging from 1.0 × 10-18 to 1.0 × 10-15 M. Furthermore, the sensor also effectively distinguished negative and positive results by detecting splitting-synthetic SARS-CoV-2 pseudovirus with a concentration of 1 copy/μL input. Our work underscores the immense potential of the electrochemical sensing platform based on the topological material Bi2Se3 in the detection of pathogens during the rapid spread of acute infectious diseases.
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Affiliation(s)
- Jiangyue Bai
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai, 519000, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yujiu Jiang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai, 519000, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Fan Tan
- Key Laboratory of Molecular Medicine and Biological Diagnosis and Treatment (Ministry of Industry and Information Technology), School of Life Science, Beijing Institute of Technology, Beijing 100081, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai, 519000, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiuxia Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai, 519000, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai, 519000, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai, 519000, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Tinglu Song
- Experimental Centre of Advanced Materials School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Bingteng Xie
- Key Laboratory of Molecular Medicine and Biological Diagnosis and Treatment (Ministry of Industry and Information Technology), School of Life Science, Beijing Institute of Technology, Beijing 100081, China.
| | - Yanbo Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai, 519000, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China; International Center for Quantum Materials, Beijing Institute of Technology, Zhuhai, 519000, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
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Chen J, Wu G, Ding Y, Chen Q, Gao W, Zhang T, Jing X, Lin H, Xue F, Tao L. Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2056. [PMID: 37513067 PMCID: PMC10383381 DOI: 10.3390/nano13142056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/01/2023] [Accepted: 07/06/2023] [Indexed: 07/30/2023]
Abstract
The topological insulator 2D Bi2Se3 is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi2Se3 is prone to oxidation. Surface passivation using ligand agents after Bi2Se3 exfoliation works well to protect the surface, but the process is time-consuming and technically challenging; a passivation agent that is stable under a highly biased potential is significant for in situ passivation of the Bi2Se3 surface. In this work, the roles of halide anions (Cl-, Br-, and I-) in respect of the chemical properties of synthetic Bi2Se3 nanosheets during electrochemical intercalated exfoliation were investigated to determine the antioxidation capacity. It was found that Bi2Se3 nanosheets prepared in a solution of tetrabutylammonium chloride (TBA+ and Cl-) have the best oxidation resistance via the surface bonding of Bi with Cl, which promotes obtaining better device stability. This work paves an avenue for adjusting the components of the electrolyte to further promote the stability of 2D Bi2Se3-nanosheet-based electronic devices.
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Affiliation(s)
- Jiayi Chen
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Guodong Wu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Yamei Ding
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Qichao Chen
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Wenya Gao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Tuo Zhang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Xu Jing
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Huiwen Lin
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Feng Xue
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Li Tao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
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Jiang Y, Zhu P, Zhao J, Li S, Wu Y, Xiong X, Zhang X, Liu Y, Bai J, Wang Z, Xu S, Wang M, Song T, Wang Z, Wang W, Han J. Sensitive biosensors based on topological insulator Bi 2Se 3 and peptide. Anal Chim Acta 2023; 1239:340655. [PMID: 36628700 DOI: 10.1016/j.aca.2022.340655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Revised: 11/20/2022] [Accepted: 11/21/2022] [Indexed: 11/23/2022]
Abstract
In this work, we designed a facile and label-free electrochemical biosensor based on intrinsic topological insulator (TI) Bi2Se3 and peptide for the detection of immune checkpoint molecules. With topological protection, Bi2Se3 could have robust surface states with low electronic noise, which was beneficial for the stable and sensitive electron transport between electrode and electrolyte interface. The peptides are easily synthesized and chemically modified, and have good biocompatibility and bioavailability, which is a suitable candidate as the recognition units for immune checkpoint molecules. Therefore, the peptide/Bi2Se3 was developed as a suitable working electrode for the electrochemical biosensor. The basic performance of the designed peptide/Bi2Se3 biosensor was investigated to determine the Anti-HA Tag Antibody and PD-L1 molecules. The linear detection range was from 3.6 × 10-10 mg mL-1 to 3.6 × 10-5 mg mL-1, and the detection limit was 1.07 × 10-11 mg mL-1. Moreover, the biosensor also displayed good selectivity and stability.
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Affiliation(s)
- Yujiu Jiang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jinge Zhao
- Key Laboratory of Medical Molecule Science and Pharmaceutics Engineering, Ministry of Industry and Information Technology, Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electro-photonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Shanshan Li
- Department of Rheumatology, China-Japan Friendship Hospital, Beijing, 100029, China
| | - Yetong Wu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yuxiang Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiangyue Bai
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zihang Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shiqi Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Minxuan Wang
- Key Laboratory of Medical Molecule Science and Pharmaceutics Engineering, Ministry of Industry and Information Technology, Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electro-photonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Tinglu Song
- Experimental Centre of Advanced Materials School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
| | - Weizhi Wang
- Key Laboratory of Medical Molecule Science and Pharmaceutics Engineering, Ministry of Industry and Information Technology, Key Laboratory of Cluster Science of Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electro-photonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314019, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
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Jiang Y, Li S, Zhu P, Zhao J, Xiong X, Wu Y, Zhang X, Li Y, Song T, Xiao W, Wang Z, Han J. Electrochemical DNA Biosensors Based on the Intrinsic Topological Insulator BiSbTeSe 2 for Potential Application in HIV Determination. ACS APPLIED BIO MATERIALS 2022; 5:1084-1091. [PMID: 35157417 DOI: 10.1021/acsabm.1c01153] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
In this work, we reported a sensitive, label-free electrochemical biosensor based on the intrinsic topological insulator (TI) BiSbTeSe2 for potential application in the determination of the HIV gene. With strong spin-obit coupling, TIs could have robust surface states with low electronic noise, which might be beneficial for the stable and sensitive electron transport between the electrode and electrolyte interface. Under optimized conditions of the biosensors using BiSbTeSe2, the differential pulse voltammetry (DPV) peak currents showed a linear relationship with the logarithm of target DNA concentrations ranging from 1.0 × 10-13 to 1.0 × 10-7 M, with a detection limit of 1.07 × 10-15 M. The sensing assay also displayed good selectivity and stability after storage at 4 °C for 7 days. This work provides an effective way to develop biosensors with topological materials, which have a potential application in the clinical determination and monitoring field.
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Affiliation(s)
- Yujiu Jiang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Shanshan Li
- Department of Rheumatology, China-Japan Friendship Hospital, 100029 Beijing, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Jinge Zhao
- Key Laboratory of Medical Molecule Science and Pharmaceutics Engineering, Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yetong Wu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yongkai Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Tinglu Song
- Experimental Centre of Advanced Materials School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Wende Xiao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.,Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China.,Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
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Yang C, Huang Y, Golden MS, Schwarzacher W. Electrochemical Scanning Tunneling Microscopy Study of Bismuth Chalcogenide Single Crystals. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2019; 35:15100-15105. [PMID: 31693383 DOI: 10.1021/acs.langmuir.9b03062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We use electrochemical scanning tunneling microscopy (EC-STM) to image single-crystal surfaces of the layered bismuth chalcogenide Sn0.01Bi1.99Te2Se in situ under electrochemical control for the first time. The Bi chalcogenides are of interest for their thermoelectric properties and as model topological insulators (TIs). We show that oxidative dissolution takes place via the progressive nucleation of pits in the initially smooth surface terraces rather than at their edges. Nanometer-resolution EC-STM images show that the pit depth is generally equal to the thickness of a complete chalcogenide quintuple layer. The preferential redeposition of dissolved components at step and defect edges on application of a more negative potential after oxidation is observed. Our work demonstrates the ability to control and characterize the surface morphology of single-crystal TIs in an electrochemical environment.
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Affiliation(s)
- Chaolong Yang
- H.H. Wills Physics Laboratory , University of Bristol , Tyndall Avenue , Bristol BS8 1TL , United Kingdom
| | - Yingkai Huang
- Van der Waals-Zeeman Institute, Institute of Physics , University of Amsterdam , Amsterdam 1012 WX , The Netherlands
| | - Mark S Golden
- Van der Waals-Zeeman Institute, Institute of Physics , University of Amsterdam , Amsterdam 1012 WX , The Netherlands
| | - Walther Schwarzacher
- H.H. Wills Physics Laboratory , University of Bristol , Tyndall Avenue , Bristol BS8 1TL , United Kingdom
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