Tuning the Energy Levels of Aza-Heterocycle-Based Polymers for Long-Term n-Channel Bottom-Gate/Top-Contact Polymer Transistors

Biselenophene Imide: Enabling Polymer Acceptor with High Electron Mobility for High-Performance All-Polymer Solar Cells

The shortage of narrow band gap polymer acceptors with high electron mobility is the major bottleneck for developing efficient all-polymer solar cells (all-PSCs). Herein, we synthesize a distannylated electron-deficient biselenophene imide monomer (BSeI-Tin) with high purity/reactivity, affording an excellent chance to access acceptor-acceptor (A-A) type polymer acceptors. Copolymerizing BSeI-Tin with dibrominated monomer Y5-Br, the resulting A-A polymer PY5-BSeI shows a higher molecular weight, narrower band gap, deeper-lying frontier molecular orbital levels and larger electron mobility than the donor-acceptor type counterpart PY5-BSe. Consequently, the PY5-BSeI-based all-PSCs deliver a remarkable efficiency of 17.77 % with a high short-circuit current of 24.93 mA cm-2 and fill factor of 75.83 %. This efficiency is much higher than that (10.70 %) of the PY5-BSe-based devices. Our study demonstrates that BSeI is a promising building block for constructing high-performance polymer acceptors and stannylation of electron-deficient building blocks offers an excellent approach to developing A-A type polymers for all-PSCs and even beyond.

n-Type Polymer Semiconductors Based on Dithienylpyrazinediimide

The development of n-type organic semiconductors critically relies on the design and synthesis of highly electron-deficient building blocks with good solubility and small steric hindrance. We report here a strongly electron-deficient dithienylpyrazinediimide (TPDI) and its n-type semiconducting polymers. The pyrazine substitution leads to the resulting polymers with much lower-lying lowest unoccupied molecular orbital (LUMO) levels and improved backbone planarity compared to the reported dithienylbenzodiimide (TBDI)- and fluorinated dithienylbenzodiimide (TFBDI)-based polymer analogues, thus yielding n-type transport character with an electron mobility up to 0.44 cm² V^-1 s^-1 in organic thin-film transistors. These results demonstrate that dithienylpyrazinediimide is a highly promising electron-deficient building block for constructing high-performance n-type polymers and the incorporation of pyrazine into imide-functionalized (hetero)arenes is an effective strategy to develop n-type polymers with deep-lying frontier molecular orbital (FMO) levels for organic optoelectronic devices.

Recent Structural Engineering of Polymer Semiconductors Incorporating Hydrogen Bonds

Highly planar, extended π-electron organic conjugated polymers have been increasingly attractive for achieving high-mobility organic semiconductors. In addition to the conventional strategy to construct rigid backbone by covalent bonds, hydrogen bond has been employed extensively to increase the planarity and rigidity of polymer via intramolecular noncovalent interactions. This review provides a general summary of high-mobility semiconducting polymers incorporating hydrogen bonds in field-effect transistors over recent years. The structural engineering of the hydrogen bond-containing building blocks and the discussion of theoretical simulation, microstructural characterization, and device performance are covered. Additionally, the effects of the introduction of hydrogen bond on self-healing, stretchability, chemical sensitivity, and mechanical properties are also discussed. The review aims to help and inspire design of new high-mobility conjugated polymers with superiority of mechanical flexibility by incorporation of hydrogen bond for the application in flexible electronics.

A Novel Donor-Acceptor Thiophene-Containing Oligomer Comprising Dibenzothiophene-S,S-dioxide Units for Solution-Processable Organic Field Effect Transistor

A π-conjugated thiophene-containing oligomer with a D-A-D-A-D (D: donor, A: acceptor) architecture, namely, 2,6-bis{[4-(7-n-hexylthiophen-2-yl)thiophen-2-yl]-(dibenzothiophene-5,5-dioxide-3,3΄-diyl)}-bis((2-ethyl-hexyl)oxy)benzo[1,2-b:4,5-b’]dithiophen (BDT(DBTOTTH)₂), was synthesized by Stille coupling reactions. There are obvious shifts in the Ultraviolet-visible (UV-vis) and photoluminescence (PL) spectra of the thin film relative to its solution, indicating the existence of the π-π stacking in the solid state of the oligomer BDT(DBTOTTH)₂. The optical band gap of the oligomer determined from its absorption onset in UV-Vis spectra is 2.25 eV. It agrees with the value of 2.29 eV determined from the cyclic voltammetry (CV) measurement. Its highest occupied and lowest unoccupied molecular orbital (HOMO/LUMO) energy levels, which were calculated from its onset of oxidation and reduction waves in CV curve, are −5.51 and −3.22 eV, respectively. The oligomer is a P-type semiconductor material with a good thermal stability and solubility, which can be used to fabricate organic field effect transistors (OFETs) by the spin coating technique. The OFET with n-octadecanylltrichlorosilane (OTS)-modified SiO₂ dielectric layer exhibited a mobility of 1.6 × 10⁻³ cm²/Vs.

Air-Stable and High-Performance Unipolar n-Type Conjugated Semiconducting Polymers Prepared by a "Strong Acceptor-Weak Donor" Strategy

Unipolar n-type conjugated polymer materials with long-term stable electron transport upon direct exposure to the air atmosphere are very challenging to prepare. In this study, three unipolar n-type donor-acceptor (D-A) conjugated polymer semiconductors (abbreviated as PNVB, PBABDFV, and PBAIDV) were successfully developed through a "strong acceptor-weak donor" strategy. The weak electron donation of the donor units in all three polymers successfully lowered the molecular energy levels by the acceptor units that strongly attracted electrons. Cyclic voltammetry demonstrated that all three polymers had low highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels near -6.0 and -4.0 eV, respectively. These results were consistent with the density functional theory calculations. The as-prepared polymers were then used to manufacture organic field-effect transistor (OFET) devices in bottom-gate/top-contact (BG/TC) configuration without any packaging protection. As expected, all devices exhibited unipolar electron transport properties. PBABDFV-based devices showed excellent field-effect performance and air stability, beneficial for straight-line molecular chain and closest π-π stacking distance to prevent water vapor and oxygen from diffusion into the active layer. This led to a maximum electron mobility (μ_e,max) of 0.79 cm² V^-1 s^-1 under air conditions. In addition, 0.50 cm² V^-1 s^-1 was still maintained after 27 days of storage in ambient environment. The near-ideal transfer curve of the PBABDFV-based OFET device in BG/TC configuration under vacuum was obtained with average mobility reliability factor (r_ave) reaching 88%.

Molecular engineering of (E)-1,2-bis(3-cyanothiophene-2-yl)ethene-based polymeric semiconductors for unipolar n-channel field-effect transistors

The unipolar n-type polymeric semiconductors based on (E)-1,2-bis(3-cyanothiophene-2-yl)ethene were developed and their structure–property relationships were investigated.