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Hilliard D, Tauchnitz T, Hübner R, Vasileiadis I, Gkotinakos A, Dimitrakopulos G, Komninou P, Sun X, Winnerl S, Schneider H, Helm M, Dimakis E. At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures. ACS NANO 2024; 18:21171-21183. [PMID: 38970499 PMCID: PMC11328169 DOI: 10.1021/acsnano.4c04172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/08/2024]
Abstract
As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of nanotechnology applications, the achievement of sharp heterointerfaces has been challenging owing to peculiarities of the commonly used vapor-liquid-solid growth mode. Here, the grading of Al across GaAs/AlxGa1-xAs/GaAs heterostructures in self-catalyzed nanowires is studied, aiming at finding the limits of the interfacial sharpness for this technologically versatile material system. A pulsed growth mode ensures precise control of the growth mechanisms even at low temperatures, while a semiempirical thermodynamic model is derived to fit the experimental Al-content profiles and quantitatively describe the dependences of the interfacial sharpness on the growth temperature, the nanowire radius, and the Al content. Finally, symmetrical Al profiles with interfacial widths of 2-3 atomic planes, at the limit of the measurement accuracy, are obtained, outperforming even equivalent thin-film heterostructures. The proposed method enables the development of advanced heterostructure schemes for a more effective utilization of the nanowire platform; moreover, it is considered expandable to other material systems and nanostructure types.
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Affiliation(s)
- Donovan Hilliard
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - Tina Tauchnitz
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Isaak Vasileiadis
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Athanasios Gkotinakos
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - George Dimitrakopulos
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Philomela Komninou
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Xiaoxiao Sun
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Stephan Winnerl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - Emmanouil Dimakis
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
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2
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Jeong HW, Ajay A, Döblinger M, Sturm S, Gómez Ruiz M, Zell R, Mukhundhan N, Stelzner D, Lähnemann J, Müller-Caspary K, Finley JJ, Koblmüller G. Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices. ACS APPLIED NANO MATERIALS 2024; 7:3032-3041. [PMID: 38357219 PMCID: PMC10863613 DOI: 10.1021/acsanm.3c05392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 12/21/2023] [Accepted: 12/26/2023] [Indexed: 02/16/2024]
Abstract
III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain, as well as resonant tunneling diodes and avalanche photodiodes. Despite various promising efforts toward high-quality single or multiple axial InGaAs heterostacks using noncatalytic growth mechanisms, the important roles of facet-dependent shape evolution, crystal defects, and the applicability to more universal growth schemes have remained elusive. Here, we report the growth of optically active InGaAs axial NW heterostructures via completely catalyst-free, selective-area molecular beam epitaxy directly on silicon (Si) using GaAs(Sb) NW arrays as tunable, high-uniformity growth templates and highlight fundamental relationships between structural, morphological, and optical properties of the InGaAs region. Structural, compositional, and 3D-tomographic characterizations affirm the desired directional growth along the NW axis with no radial growth observed. Clearly distinct luminescence from the InGaAs active region is demonstrated, where tunable array-geometry parameters and In content up to 20% are further investigated. Based on the underlying twin-induced growth mode, we further describe the facet-dependent shape and interface evolution of the InGaAs segment and its direct correlation with emission energy.
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Affiliation(s)
- Hyowon W. Jeong
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Akhil Ajay
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Markus Döblinger
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Sebastian Sturm
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Mikel Gómez Ruiz
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Richard Zell
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Nitin Mukhundhan
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Daniel Stelzner
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Jonas Lähnemann
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Knut Müller-Caspary
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Jonathan J. Finley
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Gregor Koblmüller
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
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3
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Mohseni M, Allami H, Miravet D, Gayowsky DJ, Korkusinski M, Hawrylak P. Majorana Excitons in a Kitaev Chain of Semiconductor Quantum Dots in a Nanowire. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2293. [PMID: 37630878 PMCID: PMC10459495 DOI: 10.3390/nano13162293] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 08/02/2023] [Accepted: 08/04/2023] [Indexed: 08/27/2023]
Abstract
We present here a theory of Majorana excitons, photo-excited conduction electron-valence band hole pairs, interacting with Majorana Fermions in a Kitaev chain of semiconductor quantum dots embedded in a nanowire. Using analytical tools and exact diagonalization methods, we identify the presence of Majorana zero modes in the nanowire absorption spectra.
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Affiliation(s)
- Mahan Mohseni
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (M.M.); (D.M.); (D.J.G.); (M.K.)
| | - Hassan Allami
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (M.M.); (D.M.); (D.J.G.); (M.K.)
| | - Daniel Miravet
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (M.M.); (D.M.); (D.J.G.); (M.K.)
| | - David J. Gayowsky
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (M.M.); (D.M.); (D.J.G.); (M.K.)
| | - Marek Korkusinski
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (M.M.); (D.M.); (D.J.G.); (M.K.)
- Security and Disruptive Technologies, National Research Council, Ottawa, ON K1A 0R6, Canada
| | - Pawel Hawrylak
- Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada; (M.M.); (D.M.); (D.J.G.); (M.K.)
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4
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Laferriére P, Haffouz S, Northeast DB, Poole PJ, Williams RL, Dalacu D. Position-Controlled Telecom Single Photon Emitters Operating at Elevated Temperatures. NANO LETTERS 2023; 23:962-968. [PMID: 36706023 PMCID: PMC9912373 DOI: 10.1021/acs.nanolett.2c04375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 01/25/2023] [Indexed: 06/18/2023]
Abstract
A key resource in quantum-secured communication protocols are single photon emitters. For long-haul optical networks, it is imperative to use photons at wavelengths compatible with telecom single mode fibers. We demonstrate high purity single photon emission at 1.31 μm using deterministically positioned InP photonic waveguide nanowires containing single InAsP quantum dot-in-a-rod structures. At excitation rates that saturate the emission, we obtain a single photon collection efficiency at first lens of 27.6% and a probability of multiphoton emission of g(2)(0) = 0.021. We have also evaluated the performance of the source as a function of temperature. Multiphoton emission probability increases with temperature with values of 0.11, 0.34, and 0.57 at 77, 220 and 300 K, respectively, which is attributed to an overlap of temperature-broadened excitonic emission lines. These results are a promising step toward scalably fabricating telecom single photon emitters that operate under relaxed cooling requirements.
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Affiliation(s)
- Patrick Laferriére
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University
of Ottawa, Ottawa, Ontario, Canada K1N 6N5
| | - Sofiane Haffouz
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | | | - Philip J. Poole
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | - Robin L. Williams
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | - Dan Dalacu
- National
Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University
of Ottawa, Ottawa, Ontario, Canada K1N 6N5
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5
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Sjökvist R, Tornberg M, Marnauza M, Jacobsson D, Dick KA. Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires. ACS NANOSCIENCE AU 2022; 2:539-548. [PMID: 37101854 PMCID: PMC10125347 DOI: 10.1021/acsnanoscienceau.2c00028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 08/23/2022] [Accepted: 08/23/2022] [Indexed: 04/28/2023]
Abstract
Au-seeded semiconductor nanowires have classically been considered to only grow in a layer-by-layer growth mode, where individual layers nucleate and grow one at a time with an incubation step in between. Recent in situ investigations have shown that there are circumstances where binary semiconductor nanowires grow in a multilayer fashion, creating a stack of incomplete layers at the interface between a nanoparticle and a nanowire. In the current investigation, the growth behavior in ternary InGaAs nanowires has been analyzed in situ, using environmental transmission electron microscopy. The investigation has revealed that multilayer growth also occurs for ternary nanowires and appears to be more common than in the binary case. In addition, the size of the multilayer stacks observed is much larger than what has been reported previously. The investigation details the implications of multilayers for the overall growth of the nanowires, as well as the surrounding conditions under which it has manifested. We show that multilayer growth is highly dynamic, where the stack of layers regularly changes size by transporting material between the growing layers. Another observation is that multilayer growth can be initiated in conjunction with the formation of crystallographic defects and compositional changes. In addition, the role that multilayers can have in behaviors such as growth failure and kinking, sometimes observed when creating heterostructures between GaAs and InAs ex situ, is discussed. The prevalence of multilayer growth in this ternary material system implies that, in order to fully understand and accurately predict the growth of nanowires of complex composition and structure, multilayer growth has to be considered.
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Affiliation(s)
- Robin Sjökvist
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Marcus Tornberg
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Mikelis Marnauza
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Daniel Jacobsson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- National
Centre for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Kimberly A. Dick
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
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Laferrière P, Yeung E, Miron I, Northeast DB, Haffouz S, Lapointe J, Korkusinski M, Poole PJ, Williams RL, Dalacu D. Unity yield of deterministically positioned quantum dot single photon sources. Sci Rep 2022; 12:6376. [PMID: 35430589 PMCID: PMC9013374 DOI: 10.1038/s41598-022-10451-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2021] [Accepted: 03/23/2022] [Indexed: 11/24/2022] Open
Abstract
We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as low as 0.6% with the distribution away from optimal values associated with the excitation of other charge complexes and re-excitation processes, respectively, inherent to the above-band excitation employed. Importantly, emission peak lineshapes have Lorentzian profiles indicating that linewidths are not limited by inhomogeneous broadening but rather pure dephasing, likely elastic carrier-phonon scattering due to a high phonon occupation. This work establishes nanowire-based devices as a viable route for the scalable fabrication of efficient single photon sources and provides a valuable resource for hybrid on-chip platforms currently being developed.
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7
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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8
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Boddeti AK, Guan J, Sentz T, Juarez X, Newman W, Cortes C, Odom TW, Jacob Z. Long-Range Dipole-Dipole Interactions in a Plasmonic Lattice. NANO LETTERS 2022; 22:22-28. [PMID: 34672615 DOI: 10.1021/acs.nanolett.1c02835] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Spontaneous emission of quantum emitters can be enhanced by increasing the local density of optical states, whereas engineering dipole-dipole interactions requires modifying the two-point spectral density function. Here, we experimentally demonstrate long-range dipole-dipole interactions (DDIs) mediated by surface lattice resonances in a plasmonic nanoparticle lattice. Using angle-resolved spectral measurements and fluorescence lifetime studies, we show that unique nanophotonic modes mediate long-range DDI between donor and acceptor molecules. We observe significant and persistent DDI strengths for a range of densities that map to ∼800 nm mean nearest-neighbor separation distance between donor and acceptor dipoles, a factor of ∼100 larger than free space. Our results pave the way to engineer and control long-range DDIs between an ensemble of emitters at room temperature.
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Affiliation(s)
- Ashwin K Boddeti
- Elmore Family School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | | | - Tyler Sentz
- Elmore Family School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | | | - Ward Newman
- Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Cristian Cortes
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | | | - Zubin Jacob
- Elmore Family School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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9
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Northeast DB, Dalacu D, Weber JF, Phoenix J, Lapointe J, Aers GC, Poole PJ, Williams RL. Optical fibre-based single photon source using InAsP quantum dot nanowires and gradient-index lens collection. Sci Rep 2021; 11:22878. [PMID: 34819556 PMCID: PMC8613206 DOI: 10.1038/s41598-021-02287-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Accepted: 11/11/2021] [Indexed: 11/09/2022] Open
Abstract
We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled single photons. Using pulsed excitation, we demonstrate on-demand operation with a single photon purity of 98.5% when exciting at saturation in a device with a source-fibre collection efficiency of 35% and an overall single photon collection efficiency of 10%. We also demonstrate "plug and play" operation using room temperature photoluminescence from the InP nanowire for room temperature alignment.
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Affiliation(s)
| | - Dan Dalacu
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
| | - John F Weber
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
| | - Jason Phoenix
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada.,University of Waterloo, Waterloo, N2L 3G1, Canada
| | - Jean Lapointe
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
| | - Geof C Aers
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
| | - Philip J Poole
- National Research Council Canada, Ottawa, ON, K1A 0R6, Canada
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