Growth of Ultraflat Graphene with Greatly Enhanced Mechanical Properties

Reproducible graphene synthesis by oxygen-free chemical vapour deposition

Chemical vapour deposition (CVD) synthesis of graphene on copper has been broadly adopted since the first demonstration of this process1. However, widespread use of CVD-grown graphene for basic science and applications has been hindered by challenges with reproducibility2 and quality3. Here we identify trace oxygen as a key factor determining the growth trajectory and quality for graphene grown by low-pressure CVD. Oxygen-free chemical vapour deposition (OF-CVD) synthesis is fast and highly reproducible, with kinetics that can be described by a compact model, whereas adding trace oxygen leads to suppressed nucleation and slower/incomplete growth. Oxygen affects graphene quality as assessed by surface contamination, emergence of the Raman D peak and decrease in electrical conductivity. Epitaxial graphene grown in oxygen-free conditions is contamination-free and shows no detectable D peak. After dry transfer and boron nitride encapsulation, it shows room-temperature electrical-transport behaviour close to that of exfoliated graphene. A graphite-gated device shows well-developed integer and fractional quantum Hall effects. By highlighting the importance of eliminating trace oxygen, this work provides guidance for future CVD system design and operation. The increased reproducibility and quality afforded by OF-CVD synthesis will broadly influence basic research and applications of graphene.

Controlled Growth of Single-Crystal Graphene Wafers on Twin-Boundary-Free Cu(111) Substrates

Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu(111) substrates as epitaxial growth substrates recently. However, current Cu(111) films prepared by magnetron sputtering on single-crystal sapphire wafers still suffer from in-plane twin boundaries, which degrade the SCG chemical vapor deposition. Here, it is shown how to eliminate twin boundaries on Cu and achieve 4 in. Cu(111) wafers with ≈95% crystallinity. The introduction of a temperature gradient on Cu films with designed texture during annealing drives abnormal grain growth across the whole Cu wafer. In-plane twin boundaries are eliminated via migration of out-of-plane grain boundaries. SCG wafers grown on the resulting single-crystal Cu(111) substrates exhibit improved crystallinity with >97% aligned graphene domains. As-synthesized SCG wafers exhibit an average carrier mobility up to 7284 cm2 V-1 s-1 at room temperature from 103 devices and a uniform sheet resistance with only 5% deviation in 4 in. region.

Tunable Adhesion for All-Dry Transfer of 2D Materials Enabled by the Freezing of Transfer Medium

The real applications of chemical vapor deposition (CVD)-grown graphene films require the reliable techniques for transferring graphene from growth substrates onto application-specific substrates. The transfer approaches that avoid the use of organic solvents, etchants, and strong bases are compatible with industrial batch processing, in which graphene transfer should be conducted by dry exfoliation and lamination. However, all-dry transfer of graphene remains unachievable owing to the difficulty in precisely controlling interfacial adhesion to enable the crack- and contamination-free transfer. Herein, through controllable crosslinking of transfer medium polymer, the adhesion is successfully tuned between the polymer and graphene for all-dry transfer of graphene wafers. Stronger adhesion enables crack-free peeling of the graphene from growth substrates, while reduced adhesion facilitates the exfoliation of polymer from graphene surface leaving an ultraclean surface. This work provides an industrially compatible approach for transferring 2D materials, key for their future applications, and offers a route for tuning the interfacial adhesion that would allow for the transfer-enabled fabrication of van der Waals heterostructures.

Uniform, Strain-Free, Large-Scale Graphene and h-BN Monolayers Enabled by Hydrogel Substrates

Translation of the unique properties of 2D monolayers from non-scalable micron-sized samples to macroscopic scale is a longstanding challenge obstructed by the substrate-induced strains, interface nonuniformities, and sample-to-sample variations inherent to the scalable fabrication methods. So far, the most successful strategies to reduce strain in graphene are the reduction of the interface roughness and lattice mismatch by using hexagonal boron nitride (h-BN), with the drawback of limited uniformity and applicability to other 2D monolayers, and liquid water, which is not compatible with electronic devices. This work demonstrates a new class of substrates based on hydrogels that overcome these limitations and excel h-BN and water substrates at strain relaxation enabling superiorly uniform and reproducible centimeter-sized sheets of unstrained monolayers. The ultimate strain relaxation and uniformity are rationalized by the extreme structural adaptability of the hydrogel surface owing to its high liquid content and low Young's modulus, and are universal to all 2D materials irrespective of their crystalline structure. Such platforms can be integrated into field effect transistors and demonstrate enhanced charge carrier mobilities in graphene. These results present a universal strategy for attaining uniform and strain-free sheets of 2D materials and underline the opportunities enabled by interfacing them with soft matter.

Precise synthesis of graphene by chemical vapor deposition

Graphene, a typical representative of the family of two-dimensional (2D) materials, possesses a series of phenomenal physical properties. To date, numerous inspiring discoveries have been made on its structures, properties, characterization, synthesis, transfer and applications. The real practical applications of this magic material indeed require large-scale synthesis and precise control over its structures, such as size, crystallinity, layer number, stacking order, edge type and contamination levels. Nonetheless, studies on the precise synthesis of graphene are far from satisfactory currently. Our review aims to deal with the precise synthesis of four critical graphene structures, including single-crystal graphene (SCG), AB-stacked bilayer graphene (AB-BLG), etched graphene and clean graphene. Meanwhile, existing problems and future directions in the precise synthesis of graphene are also briefly discussed.

Anomalous wrinkle propagation in polycrystalline graphene with tilt grain boundaries

Understanding the propagation of dynamic wrinkles in polycrystalline graphene with grain boundaries (GBs) is critical to the practical application of graphene-based nanodevices. Although wrinkle propagation behavior in pristine graphene (PG) and some defect-containing graphene samples have been investigated, there are no studies on the dynamic behavior of graphene with tilt GBs. Here, nine tilt GBs are constructed in graphene, and molecular dynamics (MD) simulations are performed to investigate anomalous wrinkle propagation. The MD simulation results show that a larger misorientation angle α first enhances the shielding effect of tilt GBs on wrinkle propagation before it weakens. The maximum Δz root mean square (RMS) shows that a greater misorientation angle α first increases the maximum RMS of the GB region (R_GB) before it then decreases, while the maximum RMS of R₈₀ exhibits the opposite trend. Moreover, approximately 96% of the C₆₀ kinetic energy is converted into kinetic and potential energies in graphene, and the potential energy in graphene presents two evolution modes. Phase diagrams are plotted to study the effect of the distance d₁ and rotation angle β on the wrinkle propagation and sensitivity of the maximum RMS value to d₁. It is expected that our results can provide a fundamental understanding of defect engineering and guidelines to design protectors, energy absorbers, and defect detectors in nanodevices.

In-Situ Growth of Graphene Films to Improve Sensing Performances

Graphene films made by chemical vapor deposition (CVD) are a popular method to modify sensors by virtue of large-scale and reproducibility, but suffer from various surface contamination and structural defects induced during transfer procedures. In-situ growth of graphene films is proposed in this review article to improve sensing performance. Root causes of the surface contamination and structural defects are revealed with several common transfer methods. In-situ approaches are introduced and compared, growing graphene films with clean surfaces and few defects. This allows graphene film to display superior sensing performance for sensor applications. This work may reasonably be expected to offer a good avenue for synthesis of graphene films applicable for sensing applications.

Impedance Spectroscopy of Encapsulated Single Graphene Layers

In this work, we demonstrate the use of electrical impedance spectroscopy (EIS) for the disentanglement of several dielectric contributions in encapsulated single graphene layers. The dielectric data strongly vary qualitatively with the nominal graphene resistance. In the case of sufficiently low resistance of the graphene layers, the dielectric spectra are dominated by inductive contributions, which allow for disentanglement of the electrode/graphene interface resistance from the intrinsic graphene resistance by the application of an adequate equivalent circuit model. Higher resistance of the graphene layers leads to predominantly capacitive dielectric contributions, and the deconvolution is not feasible due to the experimental high frequency limit of the EIS technique.

Bottom-Up-Etching-Mediated Synthesis of Large-Scale Pure Monolayer Graphene on Cyclic-Polishing-Annealed Cu(111)

Synthesis of large-scale single-crystalline graphene monolayers without multilayers involves the fabrication of proper single-crystalline substrates and the ubiquitous formation of multilayered graphene islands during chemical vapor deposition. Here, a method of cyclic electrochemical polishing combined with thermal annealing, which allows the conversion of commercial polycrystalline Cu foils to single-crystal Cu(111) with an almost 100% yield, is presented. A global "bottom-up-etching" method that is capable of fabricating large-area pure single-crystalline graphene monolayers without multilayers through selectively etching bottom multilayered graphene underneath large area as-grown graphene monolayer on Cu(111) surface is demonstrated. Terahertz time-domain spectroscopy (THz-TDS) measurement of the pure monolayer graphene film shows a high average sheet conductivity of 2.8 mS and mean carrier mobility of 6903 cm² V^-1 s^-1 over a large area. Density functional theory (DFT) calculations show that the selective etching is induced by the much easier diffusion of hydrogen atoms than hydrocarbon radicals across the edges of the top graphene layer, and the simulated selective etching processes based on phase field modeling are well consistent with experimental observations. This work provides new ways toward the production of single-crystal Cu(111) and the synthesis of pure monolayer graphene with high electronic quality.

Continuous orientated growth of scaled single-crystal 2D monolayer films

Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.

25 Years of Light-Emitting Electrochemical Cells: A Flexible and Stretchable Perspective

Light-emitting electrochemical cells (LECs) are simple electroluminescent devices comprising an emissive material containing mobile ions sandwiched between two electrodes. The operating mechanism of the LEC involves both ionic and electronic transport, distinguishing it from its more well-known cousin, the organic light-emitting diode (OLED). While OLEDs have become a leading player in commercial displays, LECs have flourished in academic research due to the simple device architecture and unique features of its operating mechanism, inviting exploration of new materials and fabrication strategies. These explorations have brought LECs to an exciting frontier in advanced optoelectronics: flexible and stretchable light-emitting devices. Flexible and stretchable LECs are discussed herein, presenting the LEC system as a robust and fault-tolerant development platform. The engineering of emissive composites is highlighted to control mechanical properties, and how the tolerance of LECs to electrode work function and roughness has enabled the incorporation of new electrode materials to achieve flexibility and stretchability. As part of this story, the solution processability of LECs has led to exciting demonstrations of flexible and printed LECs. An outlook is provided for LECs that builds on these strengths, potentially leading to flexible, stretchable, low-cost devices such as illuminated tags, smart packaging, flexible signage, and wearable illumination.