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Tan Z, Jung U, Jeong S, Park J. Transferrable CsPbBr 3 Perovskite Single-Crystalline Films for Visible-Wavelength Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:45147-45155. [PMID: 39138136 DOI: 10.1021/acsami.4c07059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
In this study, we propose large-scale CsPbBr3 (CPB) single-crystalline films (SCFs) grown by a one-step vapor-phase epitaxy (VPE) method for application in optoelectronic devices. After optimizing the transport speed of the precursor and cooling rate, we obtained continuous CPB films with a lateral size exceeding 2 cm2, and the thickness could be controlled from several micrometers to hundreds of nanometers. Crystallography and optoelectronic characterization proved the excellent crystallinity and very low trap density (2.14 × 1011) of the SCFs. Furthermore, we demonstrate a transfer-assembly strategy for fabricating perovskite SCF-based heterostructures for visible photodetectors. The high-quality SCF films in the active layer suppress the leakage current, leading to a low dark current of 5 × 10-10 A at -0.6 V. Therefore, the self-biased photodetector based on the vertical CsPbBr3 SCF-SnO2 heterostructure showed a high responsivity of 1.9 A/W, a detectivity of 4.65 × 1012 Jones, and a large on/off ratio of 4.63 × 103 under a 1 mW/cm2 450 nm light illumination. Our study not only demonstrates the excellent performance of single-crystalline perovskite-based photodiodes but also provides a universal assembly method for the integration of monocrystalline perovskite films in optoelectronic devices.
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Affiliation(s)
- Zhaozhong Tan
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
| | - Uijin Jung
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
| | - Seongmin Jeong
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
| | - Jinsub Park
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
- Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Korea
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2
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Yin Q, Xu R, Wang X, Li M, Huang X, Chen Z, Ma T, Xie A, Chen J, Zeng H. Precise Laser-Modulated Anion Exchange on Ultraflexible Perovskite Films for Multicolor Patterns. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39189509 DOI: 10.1021/acsami.4c09606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Lead halide perovskite anion exchange reactions tend to be spontaneous and rapid. To achieve precise control of anion exchange and modulate the bandgaps of perovskites to meet the demands in full-color displays, a laser-induced liquid-phase anion exchange method is developed in this paper. CsPbBr3 perovskites embedded in a polymer matrix are converted to CsPb(BrxCl1-x)3 and CsPb(BrxI1-x)3 perovskites, realizing the shift from green fluorescence to blue and red fluorescence. By changing the laser parameters, the anion exchange extent and luminescence wavelength are precisely tuned, with the maximum tuning wavelength range of 431-696 nm. Due to the focusing properties of the laser, the spatial position of anion exchange can be precisely controlled, which is significant for realizing fast and accurate patterning without masks. Based on this method, blue patterns with different light-emitting wavelengths are fabricated. RGB three-color patterns on a single perovskite composite film are successfully prepared by further replacement of halogen ions. More importantly, the polymer matrix provides ultraflexibility and good stability for the films; even if the composite films are arbitrarily folded or repeatedly bent, they can still maintain good luminous intensity. This method will show great potential in the field of flexible, full-color displays.
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Affiliation(s)
- Qianxi Yin
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Rongrong Xu
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xiaoting Wang
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Mulin Li
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xianliang Huang
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
- School of Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Ziyi Chen
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
- School of Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Teng Ma
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
- School of Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - An Xie
- Key Laboratory of Functional Materials and Applications of Fujian Province, School of Materials Science and Engineering, Xiamen University of Technology, Xiamen 361024, P. R. China
| | - Jun Chen
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Haibo Zeng
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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3
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Gao W, Liu S, Chen Y, Niu K, Lu Z, Li Z, Zeng Z, Xiao Y, Zhai Y, Liu Y, Wang Y. Solid-State Anion Exchange Enabled by Pluggable vdW Assembly for In Situ Halide Manipulation in Perovskite Monocrystalline Film. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2402159. [PMID: 38678535 DOI: 10.1002/smll.202402159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 04/13/2024] [Indexed: 05/01/2024]
Abstract
The fabrication of perovskite single crystal-based optoelectronics with improved performance is largely hindered by limited processing techniques. Particularly, the local halide composition manipulation, which dominates the bandgap and thus the formation of heterostructures and emission of multiple-wavelength light, is realized via prevalent liquid- or gas-phase anion exchange with the utilization of lithography, while the monocrystalline nature is sacrificed due to polycrystalline transition in exchange with massive defects emerging, impeding carrier separation and transportation. Thus, a damage-free and lithography-free solid-state anion exchange strategy, aiming at in situ halide manipulation in perovskite monocrystalline film, is developed. Typically, CsPbCl3 working as medium to deliver halide is van der Waals (vdW) assembled to specific spots of CsPbBr3, followed by the removal of CsPbCl3 after anion exchange, with the halide composition in contact area modulated and monocrystalline nature of CsPbBr3 preserved. CsPbBr3-CsPbBrxCl3-x monocrystalline heterostructure has been achieved without lithography. Device based on the heterostructure shows apparent rectification behavior and improved photo-response rate. Heterostructure arrays can also be constructed with customized medium crystal. Furthermore, the halide composition can be accurately tuned to enable full coverage of visible spectra. The solid-state exchange enriches the toolbox for processing vulnerable perovskite and paves the way for the integration of monocrystalline perovskite optoelectronics.
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Affiliation(s)
- Weiqi Gao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Songlong Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Kaixin Niu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiyao Zeng
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, 410081, China
| | - Yulong Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering and Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, P. R. China
| | - Yaxin Zhai
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, 410081, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
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4
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Lv Q, Shen X, Li X, Meng Y, Yu KM, Guo P, Xiao L, Ho JC, Duan X, Duan X. On-Wire Design of Axial Periodic Halide Perovskite Superlattices for High-Performance Photodetection. ACS NANO 2024; 18:18022-18035. [PMID: 38934514 DOI: 10.1021/acsnano.4c05205] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2024]
Abstract
Precise synthesis of all-inorganic lead halide perovskite nanowire heterostructures and superlattices with designable modulation of chemical compositions is essential for tailoring their optoelectronic properties. Nevertheless, controllable synthesis of perovskite nanostructure heterostructures remains challenging and underexplored to date. Here, we report a rational strategy for wafer-scale synthesis of one-dimensional periodic CsPbCl3/CsPbI3 superlattices. We show that the highly parallel array of halide perovskite nanowires can be prepared roughly as horizontally guided growth on an M-plane sapphire. A periodic patterning of the sapphire substrate enables position-selective ion exchange to obtain highly periodic CsPbCl3/CsPbI3 nanowire superlattices. This patterning is further confirmed by micro-photoluminescence investigations, which show that two separate band-edge emission peaks appear at the interface of a CsPbCl3/CsPbI3 heterojunction. Additionally, compared with the pure CsPbCl3 nanowires, photodetectors fabricated using these periodic heterostructure nanowires exhibit superior photoelectric performance, namely, high ION/IOFF ratio (104), higher responsivity (49 A/W), and higher detectivity (1.51 × 1013 Jones). Moreover, a spatially resolved visible image sensor based on periodic nanowire superlattices is demonstrated with good imaging capability, suggesting promising application prospects in future photoelectronic imaging systems. All these results based on the periodic CsPbCl3/CsPbI3 nanowire superlattices provides an attractive material platform for integrated perovskite devices and circuits.
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Affiliation(s)
- Qihang Lv
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xia Shen
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
| | - Xuyang Li
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Kin Man Yu
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Pengfei Guo
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
| | - Liantuan Xiao
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Xidong Duan
- College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, United States
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5
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Liu S, Gao W, Chen Y, Yang X, Niu K, Li S, Xiao Y, Liu Y, Zhong J, Xia J, Li Z, Hu Y, Chen S, Liu Y, Wang Y. van der Waals Integration of Large-Area Monocrystalline 3D Perovskite Thin Films on Arbitrary Semiconductor Substrates for Heterojunctions. NANO LETTERS 2024; 24:7724-7731. [PMID: 38864413 DOI: 10.1021/acs.nanolett.4c01715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2024]
Abstract
Perovskite monocrystalline films are regarded as desirable candidates for the integration of high-performance optoelectronics due to their unique photophysical properties. However, the heterogeneous integration of a perovskite monocrystalline film with other semiconductors is fundamentally limited by the lattice mismatch, which hinders direct epitaxy. Herein, the van der Waals (vdW) integration strategy for 3D perovskites is developed, where perovskite monocrystalline films are epitaxially grown on the mother substrate, followed by its peeling off and transferring to arbitrary semiconductors, forming monocrystalline heterojunctions. The as-achieved CsPbBr3-Nb-doped SrTiO3 (Nb:STO) vdW p-n heterojunction exhibited comparable performance to their directly epitaxial counterpart, demonstrating the feasibility of vdW integration for 3D perovskites. Furthermore, the vdW integration could be extended to silicon substrates, rendering the CsPbBr3-n-Si and CsPbCl3-p-Si p-n heterojunction with apparent rectification behaviors and photoresponse. The vdW integration significantly enriches the selections of semiconductors hybridizing with perovskites and provides opportunities for monocrystalline perovskite optoelectronics with complex configurations and multiple functionalities.
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Affiliation(s)
- Songlong Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Weiqi Gao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Kaixin Niu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Siyu Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yulong Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering and Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yanfang Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jiang Zhong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jiangnan Xia
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhou Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Shulin Chen
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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6
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Le HKD, Zhang Y, Behera P, Vailionis A, Phang A, Brinn RM, Yang P. Room-Temperature Ferroelectric Epitaxial Nanowire Arrays with Photoluminescence. NANO LETTERS 2024; 24:5189-5196. [PMID: 38636084 DOI: 10.1021/acs.nanolett.4c00453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
The development of large-scale, high-quality ferroelectric semiconductor nanowire arrays with interesting light-emitting properties can address limitations in traditional wide-bandgap ferroelectrics, thus serving as building blocks for innovative device architectures and next-generation high-density optoelectronics. Here, we investigate the optical properties of ferroelectric CsGeX3 (X = Br, I) halide perovskite nanowires that are epitaxially grown on muscovite mica substrates by vapor phase deposition. Detailed structural characterizations reveal an incommensurate heteroepitaxial relationship with the mica substrate. Furthermore, photoluminescence that can be tuned from yellow-green to red emissions by varying the halide composition demonstrates that these nanowire networks can serve as platforms for future optoelectronic applications. In addition, the room-temperature ferroelectricity and ferroelectric domain structures of these nanowires are characterized using second harmonic generation (SHG) polarimetry. The combination of room-temperature ferroelectricity with photoluminescence in these nanowire arrays unlocks new avenues for the design of novel multifunctional materials.
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Affiliation(s)
- Han K D Le
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Ye Zhang
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Piush Behera
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Arturas Vailionis
- Stanford Nano Shared Facilities, Stanford University, Stanford, California 94305, United States
- Department of Physics, Kaunas University of Technology, LT-51368 Kaunas, Lithuania
| | - Amelyn Phang
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Rafaela M Brinn
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Peidong Yang
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute, Berkeley, California 94720, United States
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7
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Xu X, Fan C, He H, Ye Z. Epitaxial Growth of CsPbBr 3 Pyramids/CdS Nanobelt Heterostructures for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19742-19750. [PMID: 38563423 DOI: 10.1021/acsami.3c19282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Perovskites have great potential for optoelectronic applications due to their high photoluminescence quantum yield, large absorption coefficient, great defect tolerance, and adjustable band gap. Perovskite heterostructures may further enhance the performance of optoelectronic devices. So far, however, most of perovskite heterostructures are fabricated by mechanical stacking or spin coating, which could introduce a large number of defects or impurities at the heterointerface owing to the random stacking process. Herein, we report the epitaxial growth of CsPbBr3 pyramids/CdS nanobelt heterostructures via a 2-step vapor deposition route. The CsPbBr3 triangular pyramids are well aligned on the surface of CdS nanobelts with the epitaxial relationships of (0-22)CsPbBr3||(1-20)CdS and (-211)CsPbBr3||(002)CdS. Time-resolved photoluminescence results reveal that effective charge transfer occurred at the heterointerface, which can be attributed to the type-II band arrangement. Theoretical simulations reveal that the unique CsPbBr3 pyramids/CdS nanobelt structure facilitates diminishing the reflection losses and enhancing the light absorption. The photodetector based on these CsPbBr3 pyramids/CdS nanobelt heterostructures exhibited an ultrahigh photoswitching ratio of 2.14 × 105, a high responsivity up to 4.07 × 104 A/W, a high detectivity reaching 1.36 × 1013 Jones, fast photoresponses (τrise = 472 μs and τdecay = 894 μs), low dark current, and suppressed hysteresis.
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Affiliation(s)
- Xing Xu
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421010, P. R. China
- Wenzhou XINXINTAIJING Tech. Co., Ltd., Wenzhou 325006, P. R. China
| | - Chao Fan
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
- Wenzhou XINXINTAIJING Tech. Co., Ltd., Wenzhou 325006, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, P. R. China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
- Wenzhou XINXINTAIJING Tech. Co., Ltd., Wenzhou 325006, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, P. R. China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
- Wenzhou XINXINTAIJING Tech. Co., Ltd., Wenzhou 325006, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, P. R. China
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8
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Han Q, Wang J, Tian S, Hu S, Wu X, Bai R, Zhao H, Zhang DW, Sun Q, Ji L. Inorganic perovskite-based active multifunctional integrated photonic devices. Nat Commun 2024; 15:1536. [PMID: 38378620 PMCID: PMC10879536 DOI: 10.1038/s41467-024-45565-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Accepted: 01/25/2024] [Indexed: 02/22/2024] Open
Abstract
The development of highly efficient active integrated photonic circuits is crucial for advancing information and computing science. Lead halide perovskite semiconductors, with their exceptional optoelectronic properties, offer a promising platform for such devices. In this study, active micro multifunctional photonic devices were fabricated on monocrystalline CsPbBr3 perovskite thin films using a top-down etching technique with focused ion beams. The etched microwire exhibited a high-quality micro laser that could serve as a light source for integrated devices, facilitating angle-dependent effective propagation between coupled perovskite-microwire waveguides. Employing this strategy, multiple perovskite-based active integrated photonic devices were realized for the first time. These devices included a micro beam splitter that coherently separated lasing signals, an X-coupler performing transfer matrix functions with two distinguishable light sources, and a Mach-Zehnder interferometer manipulating the splitting and coalescence of coherent light beams. These results provide a proof-of-concept for active integrated functionalized photonic devices based on perovskite semiconductors, representing a promising avenue for practical applications in integrated optical chips.
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Affiliation(s)
- Qi Han
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Jun Wang
- Department of Optical Science and Engineering, School of Information Science and Technology, Key Laboratory of Micro & Nano Photonic Structures, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, and Shanghai Ultra-precision Optical Manufacturing Engineering Research Center, Fudan University, Shanghai, 200433, China.
| | - Shuangshuang Tian
- Department of Optical Science and Engineering, School of Information Science and Technology, Key Laboratory of Micro & Nano Photonic Structures, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, and Shanghai Ultra-precision Optical Manufacturing Engineering Research Center, Fudan University, Shanghai, 200433, China
| | - Shen Hu
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
- Jiashan Fudan Institute, Jiaxing, 314110, China.
| | - Xuefeng Wu
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Shanghai, 201210, China
| | - Rongxu Bai
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Haibin Zhao
- Department of Optical Science and Engineering, School of Information Science and Technology, Key Laboratory of Micro & Nano Photonic Structures, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, and Shanghai Ultra-precision Optical Manufacturing Engineering Research Center, Fudan University, Shanghai, 200433, China
| | - David W Zhang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Jiashan Fudan Institute, Jiaxing, 314110, China
- Zhangjiang Fudan International Innovation Center, Shanghai, 201210, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Qingqing Sun
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
- Jiashan Fudan Institute, Jiaxing, 314110, China.
- Zhangjiang Fudan International Innovation Center, Shanghai, 201210, China.
| | - Li Ji
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
- Jiashan Fudan Institute, Jiaxing, 314110, China.
- Zhangjiang Fudan International Innovation Center, Shanghai, 201210, China.
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
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9
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Guo X, Han Q, Wang J, Tian S, Bai R, Zhao H, Zou X, Lu X, Sun Q, Zhang DW, Hu S, Ji L. Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:24606-24613. [PMID: 37184060 DOI: 10.1021/acsami.3c03191] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
We report the large-scale transfer process for monocrystalline CsPbBr3 thin films prepared by chemical vapor deposition (CVD) with excellent optical properties and stability. The transfer process is robust, simple, and effective, in which CsPbBr3 thin films could be transferred to several substrates and effectively avoid chemical or physical fabrication processes to damage the perovskite surface. Moreover, the transfer process endows CsPbBr3 and substrates with atomically clean and electronically flat interfaces. We utilize this transfer process to realize several optoelectronic devices, including a photonic laser with a threshold of 61 μJ/cm2, a photodetector with a responsivity of 2.4 A/W, and a transistor with a hole mobility of 11.47 cm2 V-1 s-1. High device performances mainly originate from low defects of high-quality single-crystal perovskite and seamless contact between CsPbBr3 and target substrates. The large-scale nondestructive transfer process provides promising opportunities for optoelectronic applications based on monocrystalline perovskites.
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Affiliation(s)
- Xiangyu Guo
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Qi Han
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jun Wang
- Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Shuangshuang Tian
- Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Rongxu Bai
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Haibin Zhao
- Department of Optical Science and Engineering, and School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Xingli Zou
- State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Qingqing Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David W Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Hubei Yangtz Memory Laboratories, Wuhan 430205, China
| | - Shen Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Jiashan Fudan Institute, Jiashan 314100, China
| | - Li Ji
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Hubei Yangtz Memory Laboratories, Wuhan 430205, China
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10
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Meng Y, Zhang Y, Lai Z, Wang W, Wang W, Li Y, Li D, Xie P, Yin D, Chen D, Liu C, Yip S, Ho JC. Au-Seeded CsPbI 3 Nanowire Optoelectronics via Exothermic Nucleation. NANO LETTERS 2023; 23:812-819. [PMID: 36579841 DOI: 10.1021/acs.nanolett.2c03612] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Converting vapor precursors to solid nanostructures via a liquid noble-metal seed is a common vapor deposition principle. However, such a noble-metal-seeded process is excluded from the crystalline halide perovskite synthesis, mainly hindered by the growth mechanism shortness. Herein, powered by a spontaneous exothermic nucleation process (ΔH < 0), the Au-seeded CsPbI3 nanowires (NWs) growth is realized based on a vapor-liquid-solid (VLS) growth mode. It is energetically favored that the Au seeds are reacted with a Pb vapor precursor to form molten Au-Pb droplets at temperatures down to 212 °C, further triggering the low-temperature VLS growth of CsPbI3 NWs. More importantly, this Au-seeded process reduces in-bandgap trap states and consequently avoids Shockley-Read-Hall recombination, contributing to outstanding photodetector performances. Our work extends the powerful Au-seeded VLS growth mode to the emerging halide perovskites, which will facilitate their nanostructures with tailored material properties.
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Affiliation(s)
| | | | | | | | | | | | | | | | | | | | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou450002, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka816-8580, Japan
| | - Johnny C Ho
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka816-8580, Japan
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11
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Markina DI, Anoshkin SS, Masharin MA, Khubezhov SA, Tzibizov I, Dolgintsev D, Terterov IN, Makarov SV, Pushkarev AP. Perovskite Nanowire Laser for Hydrogen Chloride Gas Sensing. ACS NANO 2023; 17:1570-1582. [PMID: 36594418 DOI: 10.1021/acsnano.2c11013] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Detection of hazardous volatile organic and inorganic species is a crucial task for addressing human safety in the chemical industry. Among these species, there are hydrogen halides (HX, X = Cl, Br, I) vastly exploited in numerous technological processes. Therefore, the development of a cost-effective, highly sensitive detector selective to any HX gas is of particular interest. Herein, we demonstrate the optical detection of hydrogen chloride gas with solution-processed halide perovskite nanowire lasers grown on a nanostructured alumina substrate. An anion exchange reaction between a CsPbBr3 nanowire and vaporized HCl molecules results in the formation of a structure consisting of a bromide core and thin mixed-halide CsPb(Cl,Br)3 shell. The shell has a lower refractive index than the core does. Therefore, the formation and further expansion of the shell reduce the field confinement for experimentally observed laser modes and provokes an increase in their frequency. This phenomenon is confirmed by the coherency of the data derived from XPS spectroscopy, EDX analysis, in situ XRD experiments, HRTEM images, and fluorescent microspectroscopy, as well as numerical modeling for Cl- ion diffusion and the shell-thickness-dependent spectral position of eigenmodes in a core-shell perovskite nanowire. The revealed optical response allows the detection of HCl molecules in the 5-500 ppm range. The observed spectral tunability of the perovskite nanowire lasers can be employed not only for sensing but also for their precise spectral tuning.
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Affiliation(s)
- Daria I Markina
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
| | - Sergey S Anoshkin
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
| | - Mikhail A Masharin
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
| | - Soslan A Khubezhov
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
- North Ossetian State University, Vatutina str. 46, 362025Vladikavkaz, Russia
| | - Ivan Tzibizov
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
| | - Dmitriy Dolgintsev
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
| | - Ivan N Terterov
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
| | - Sergey V Makarov
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
- Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao266000, Shandong, People's Republic of China
| | - Anatoly P Pushkarev
- ITMO University, School of Physics and Engineering, Kronverkskiy pr. 49, 197101St. Petersburg, Russia
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12
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Kim J, Seo K, Lee S, Kim K, Kim C, Lee J. All-in-One Process for Color Tuning and Patterning of Perovskite Quantum Dot Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200073. [PMID: 35233994 PMCID: PMC9069357 DOI: 10.1002/advs.202200073] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Indexed: 05/05/2023]
Abstract
Although post-synthetic anion exchange allows halide perovskite quantum dots to easily change the optical bandgap of materials, additional exchange of shorter ligands is required to use them as active materials in optoelectronic devices. In this study, a novel all-in-one process exchanging ligands and halide anions in film-state for facile color tuning and patterning of cesium lead halide perovskite colloidal quantum dot (PeQD) light-emitting diodes (LEDs) is proposed. The proposed all-in-one process significantly enhances the performances of PeQD LEDs by passivating the PeQD with shorter ligands. In addition, the all-in-one process is repeated more stably in the film state. Red, green, and blue LEDs with extremely narrow emission spectra using cesium lead bromide PeQDs and appropriate butylammonium halide solutions are fabricated. Furthermore, the proposed all-in-one process in film-state facilitated rapid color change in localized areas, thereby aiding in realizing fine patterns of narrow widths (300 µm) using simple contact masks. Consequently, various paint-over red/green/blue patterns in PeQD LEDs by applying halide solutions additively are fabricated.
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Affiliation(s)
- Junho Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Ki‐Won Seo
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - SeungJae Lee
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Kyungmin Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Changjo Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Jung‐Yong Lee
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
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13
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Yen MC, Lee CJ, Liu KH, Peng Y, Leng J, Chang TH, Chang CC, Tamada K, Lee YJ. All-inorganic perovskite quantum dot light-emitting memories. Nat Commun 2021; 12:4460. [PMID: 34294699 PMCID: PMC8298456 DOI: 10.1038/s41467-021-24762-w] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2020] [Accepted: 07/06/2021] [Indexed: 11/11/2022] Open
Abstract
Field-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-emitting electrochemical cell (LEC), or vice versa, by simply modulating its bias polarity. We then realize for the first time a fast, all-perovskite light-emitting memory (LEM) operating at 5 kHz by pairing such two identical devices in series, in which one functions as an RRAM to electrically read the encoded data while the other simultaneously as an LEC for a parallel, non-contact optical reading. We further show that the digital status of the LEM can be perceived in real time from its emission color. Our work opens up a completely new horizon for more advanced all-inorganic perovskite optoelectronic technologies. Electric field induced ion migration is a well-known phenomenon in perovskite, but the consequences are notorious, and thus needs to be prevented. Here, on the other hand, the authors cleverly manipulate this event for realising resistive random-access memory and light-emitting electrochemical cell in one device based on CsPbBr3 quantum dots.
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Affiliation(s)
- Meng-Cheng Yen
- Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan
| | - Chia-Jung Lee
- Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan
| | - Kang-Hsiang Liu
- Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan
| | - Yi Peng
- Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan
| | - Junfu Leng
- Institute for Materials Chemistry and Engineering (IMCE), Kyushu University, Fukuoka, Japan
| | - Tzu-Hsuan Chang
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan
| | - Chun-Chieh Chang
- Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan.
| | - Kaoru Tamada
- Institute for Materials Chemistry and Engineering (IMCE), Kyushu University, Fukuoka, Japan. .,Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai, Japan.
| | - Ya-Ju Lee
- Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan.
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