1
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Borghi MTA, Wilson NR. Cathodoluminescence from interlayer excitons in a 2D semiconductor heterobilayer. NANOTECHNOLOGY 2024; 35:465203. [PMID: 39158548 DOI: 10.1088/1361-6528/ad70b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2024] [Accepted: 08/14/2024] [Indexed: 08/20/2024]
Abstract
Photoluminescence has widely been used to study excitons in semiconducting transition metal dichalcogenide (MX2) monolayers, demonstrating strong light-matter interactions and locked spin and valley degrees of freedom. In heterobilayers composed of overlapping monolayers of two different MX2, an interlayer exciton can form, with the hole localised in one layer and the electron in the other. These interlayer excitons are long-lived, field-tunable, and can be trapped by moiré patterns formed at small twist angles between the layers. Here we demonstrate that emission from radiative recombination of interlayer excitons can be observed by cathodoluminescence from a WSe2/MoSe2heterobilayer encapsulated in hexagonal boron nitride. The higher spatial resolution of cathodoluminescence, compared to photoluminescence, allows detailed analysis of sample heterogeneity at the 100 s of nm lengthscales over which twist angles tend to vary in dry-transfer fabricated heterostructures.
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Affiliation(s)
- Matteo T A Borghi
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Neil R Wilson
- Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
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2
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Ninhos P, Tserkezis C, Mortensen NA, Peres NMR. Tunable Exciton Polaritons in Band-Gap Engineered Hexagonal Boron Nitride. ACS NANO 2024. [PMID: 39041180 DOI: 10.1021/acsnano.4c07003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
We show that hexagonal boron nitride (hBN), a two-dimensional insulator, when subjected to an external superlattice potential forms a paradigm for electrostatically tunable excitons in the near- and mid-ultraviolet (UV). With a combination of analytical and numerical methods, we see that the imposed potential has three consequences: (i) It renormalizes the effective mass tensor, leading to anisotropic effective masses. (ii) It renormalizes the band gap, eventually reducing it. (iii) It reduces the exciton binding energies. All these consequences depend on a single dimensionless parameter, which includes the product of strength of the external potential with its period. In addition to the excitonic energy levels, we compute the optical conductivity along two orthogonal directions and from it the absorption spectrum. The results for the latter show that our system is able to mimic a grid polarizer. These characteristics make one-dimensional hBN superlattices a viable and meaningful platform for fine-tuned polaritonics in the UV to visible spectral range.
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Affiliation(s)
- Pedro Ninhos
- POLIMA─Center for Polariton-driven Light-Matter Interactions, University of Southern Denmark, Campusvej 55, DK-5230 Odense M, Denmark
| | - Christos Tserkezis
- POLIMA─Center for Polariton-driven Light-Matter Interactions, University of Southern Denmark, Campusvej 55, DK-5230 Odense M, Denmark
| | - N Asger Mortensen
- POLIMA─Center for Polariton-driven Light-Matter Interactions, University of Southern Denmark, Campusvej 55, DK-5230 Odense M, Denmark
- D-IAS─Danish Institute for Advanced Study, University of Southern Denmark, Campusvej 55, DK-5230 Odense M, Denmark
| | - Nuno M R Peres
- POLIMA─Center for Polariton-driven Light-Matter Interactions, University of Southern Denmark, Campusvej 55, DK-5230 Odense M, Denmark
- Centro de Física (CF-UM-UP) and Departamento de Física, Universidade do Minho, P-4710-057 Braga, Portugal
- International Iberian Nanotechnology Laboratory (INL), Av Mestre José Veiga, 4715-330 Braga, Portugal
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3
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Song G, Hao H, Yan S, Fang S, Xu W, Tong L, Zhang J. Observation of Chirality Transfer in Twisted Few-Layer Graphene. ACS NANO 2024; 18:17578-17585. [PMID: 38919006 DOI: 10.1021/acsnano.4c01934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Chiral materials are the focus of research in a variety of fields such as chiroptical sensing, biosensing, catalysis, and spintronics. Twisted two-dimensional (2D) materials are rapidly developing into a class of atomically thin chiral materials that can be effectively modulated through interlayer twist. However, chirality transfer in chiral 2D materials has not been reported. Here, we show that the chirality from the twist interface of graphene can directly transfer to achiral few-layer graphene and lead to a strong chiroptical response probed with circularly polarized Raman spectroscopy. Distinct Raman optical activity (ROA) for the interlayer shear modes in achiral few-layer graphene is observed, with the degree of polarization reaching as high as 0.5. These findings demonstrate the programmability of chiroptical response through stacking and twist engineering in 2D materials and offer insights into the transfer of chirality in atomically thin chiral materials for optical and electronic applications.
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Affiliation(s)
- Ge Song
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - He Hao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Shuowen Yan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Susu Fang
- Key Laboratory of Mesoscopic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Weigao Xu
- Key Laboratory of Mesoscopic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
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4
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Chen CY, Moore SL, Maiti R, Ginsberg JS, Jadidi MM, Li B, Chae SH, Rajendran A, Patwardhan GN, Watanabe K, Taniguchi T, Hone J, Basov DN, Gaeta AL. Unzipping hBN with ultrashort mid-infrared pulses. SCIENCE ADVANCES 2024; 10:eadi3653. [PMID: 38691599 PMCID: PMC11062566 DOI: 10.1126/sciadv.adi3653] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Accepted: 03/27/2024] [Indexed: 05/03/2024]
Abstract
Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser writing require cleanroom facilities or leave residue. We describe an approach to creating atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation with a mid-infrared pulsed laser from free space. We term this phenomenon "unzipping" to describe the rapid formation and growth of a crack tens of nanometers wide from a point within the laser-driven region. Formation of these features is attributed to the large atomic displacement and high local bond strain produced by strongly driving the crystal at a natural resonance. This process occurs only via coherent phonon excitation and is highly sensitive to the relative orientation of the crystal axes and the laser polarization. Its cleanliness, directionality, and sharpness enable applications such as polariton cavities, phonon-wave coupling, and in situ flake cleaving.
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Affiliation(s)
- Cecilia Y. Chen
- Department of Electrical Engineering, Columbia University, New York, NY 10027, USA
| | - Samuel L. Moore
- Department of Physics, Columbia University, New York, NY 10027, USA
| | - Rishi Maiti
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
- Department of Physics, Indian Institute of Technology Guwahati, Assam 781039, India
| | - Jared S. Ginsberg
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
| | - M. Mehdi Jadidi
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
| | - Baichang Li
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | - Sang Hoon Chae
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Anjaly Rajendran
- Department of Electrical Engineering, Columbia University, New York, NY 10027, USA
| | - Gauri N. Patwardhan
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | - D. N. Basov
- Department of Physics, Columbia University, New York, NY 10027, USA
| | - Alexander L. Gaeta
- Department of Electrical Engineering, Columbia University, New York, NY 10027, USA
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
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5
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Al Ezzi MM, Hu J, Ariando A, Guinea F, Adam S. Topological Flat Bands in Graphene Super-Moiré Lattices. PHYSICAL REVIEW LETTERS 2024; 132:126401. [PMID: 38579227 DOI: 10.1103/physrevlett.132.126401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2023] [Revised: 12/06/2023] [Accepted: 02/13/2024] [Indexed: 04/07/2024]
Abstract
Moiré-pattern-based potential engineering has become an important way to explore exotic physics in a variety of two-dimensional condensed matter systems. While these potentials have induced correlated phenomena in almost all commonly studied 2D materials, monolayer graphene has remained an exception. We demonstrate theoretically that a single layer of graphene, when placed between two bulk boron nitride crystal substrates with the appropriate twist angles, can support a robust topological ultraflat band emerging as the second hole band. This is one of the simplest platforms to design and exploit topological flat bands.
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Affiliation(s)
- Mohammed M Al Ezzi
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546
- Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542
| | - Junxiong Hu
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546
- Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542
| | - Ariando Ariando
- Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542
| | | | - Shaffique Adam
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546
- Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575
- Yale-NUS College, 16 College Avenue West, Singapore 138527
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6
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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7
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Zhu H, Yakobson BI. Creating chirality in the nearly two dimensions. NATURE MATERIALS 2024; 23:316-322. [PMID: 38388730 DOI: 10.1038/s41563-024-01814-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 01/18/2024] [Indexed: 02/24/2024]
Abstract
Structural chirality, defined as the lack of mirror symmetry in materials' atomic structure, is only meaningful in three-dimensional space. Yet two-dimensional (2D) materials, despite their small thickness, can show chirality that enables prominent asymmetric optical, electrical and magnetic properties. In this Perspective, we first discuss the possible definition and mathematical description of '2D chiral materials', and the intriguing physics enabled by structural chirality in van der Waals 2D homobilayers and heterostructures, such as circular dichroism, chiral plasmons and the nonlinear Hall effect. We then summarize the recent experimental progress and approaches to induce and control structural chirality in 2D materials from monolayers to superlattices. Finally, we postulate a few unique opportunities offered by 2D chiral materials, the synthesis and new properties of which can potentially lead to chiral optoelectronic devices and possibly materials for enantioselective photochemistry.
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Affiliation(s)
- Hanyu Zhu
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA.
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA.
- Department of Chemistry, Rice University, Houston, TX, USA.
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8
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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9
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Kuang X, Pantaleón Peralta PA, Angel Silva-Guillén J, Yuan S, Guinea F, Zhan Z. Optical properties and plasmons in moiré structures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:173001. [PMID: 38232397 DOI: 10.1088/1361-648x/ad1f8c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2023] [Accepted: 01/17/2024] [Indexed: 01/19/2024]
Abstract
The discoveries of numerous exciting phenomena in twisted bilayer graphene (TBG) are stimulating significant investigations on moiré structures that possess a tunable moiré potential. Optical response can provide insights into the electronic structures and transport phenomena of non-twisted and twisted moiré structures. In this article, we review both experimental and theoretical studies of optical properties such as optical conductivity, dielectric function, non-linear optical response, and plasmons in moiré structures composed of graphene, hexagonal boron nitride (hBN), and/or transition metal dichalcogenides. Firstly, a comprehensive introduction to the widely employed methodology on optical properties is presented. After, moiré potential induced optical conductivity and plasmons in non-twisted structures are reviewed, such as single layer graphene-hBN, bilayer graphene-hBN and graphene-metal moiré heterostructures. Next, recent investigations of twist-angle dependent optical response and plasmons are addressed in twisted moiré structures. Additionally, we discuss how optical properties and plasmons could contribute to the understanding of the many-body effects and superconductivity observed in moiré structures.
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Affiliation(s)
- Xueheng Kuang
- Yangtze Delta Industrial Innovation Center of Quantum Science and Technology, Suzhou 215000, People's Republic of China
| | | | - Jose Angel Silva-Guillén
- Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia, Calle Faraday 9, 28049 Madrid, Spain
| | - Shengjun Yuan
- Key Laboratory of Artificial Micro- and Nano-structures of the Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
| | - Francisco Guinea
- Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia, Calle Faraday 9, 28049 Madrid, Spain
- Donostia International Physics Center, Paseo Manuel de Lardizábal 4, 20018 San Sebastián, Spain
| | - Zhen Zhan
- Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia, Calle Faraday 9, 28049 Madrid, Spain
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10
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Biswas A, Xu R, Alvarez GA, Zhang J, Christiansen-Salameh J, Puthirath AB, Burns K, Hachtel JA, Li T, Iyengar SA, Gray T, Li C, Zhang X, Kannan H, Elkins J, Pieshkov TS, Vajtai R, Birdwell AG, Neupane MR, Garratt EJ, Ivanov TG, Pate BB, Zhao Y, Zhu H, Tian Z, Rubio A, Ajayan PM. Non-Linear Optics at Twist Interfaces in h-BN/SiC Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304624. [PMID: 37707242 DOI: 10.1002/adma.202304624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/24/2023] [Indexed: 09/15/2023]
Abstract
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, an alternative, simple, and scalable approach is suggested, where nanocrystallinetwo-dimensional (2D) film on 3D substrates yields twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. This work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology.
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Affiliation(s)
- Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Rui Xu
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Gustavo A Alvarez
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Jin Zhang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Chaussee 149, 22761, Luruper, Germany
| | | | - Anand B Puthirath
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Kory Burns
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Tao Li
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Tia Gray
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Chenxi Li
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Xiang Zhang
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Harikishan Kannan
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Jacob Elkins
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Tymofii S Pieshkov
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - A Glen Birdwell
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Elias J Garratt
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Tony G Ivanov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Bradford B Pate
- Chemistry Division, Naval Research Laboratory, Washington, D.C., 20375, USA
| | - Yuji Zhao
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Hanyu Zhu
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Zhiting Tian
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Angel Rubio
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Chaussee 149, 22761, Luruper, Germany
- Center for Computational Quantum Physics (CCQ), Flatiron Institute, New York, NY, 10010, USA
| | - Pulickel M Ajayan
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
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11
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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12
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Han Z, Wang F, Sun J, Wang X, Tang Z. Recent Advances in Ultrathin Chiral Metasurfaces by Twisted Stacking. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206141. [PMID: 36284479 DOI: 10.1002/adma.202206141] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Revised: 09/22/2022] [Indexed: 06/16/2023]
Abstract
Artificial chiral nanostructures have been subjected to extensive research for their unique chiroptical activities. Planarized chiral films of ultrathin thicknesses are in particular demand for easy on-chip integration and improved energy efficiency as polarization-sensitive metadevices. Recently, controlled twisted stacking of two or more layers of nanomaterials, such as 2D van der Waals materials, ultrathin films, or traditional metasurfaces, at an angle has emerged as a general strategy to introduce optical chirality into achiral solid-state systems. This method endows new degrees of freedom, e.g., the interlayer twist angle, to flexibly engineer and tune the chiroptical responses without having to change the material or the design, thus greatly facilitating the development of multifunctional metamaterials. In this review, recent exciting progress in planar chiral metasurfaces are summarized and discussed from the viewpoints of building blocks, fabrication methods, as well as circular dichroism and modulation thereof in twisted stacked nanostructures. The review further highlights the ever-growing portfolio of applications of these chiral metasurfaces, including polarization conversion, information encryption, chiral sensing, and as an engineering platform for hybrid metadevices. Finally, forward-looking prospects are provided.
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Affiliation(s)
- Zexiang Han
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Fei Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Juehan Sun
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Xiaoli Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhiyong Tang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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13
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Shen J, Dong Z, Qi M, Zhang Y, Zhu C, Wu Z, Li D. Observation of Moiré Patterns in Twisted Stacks of Bilayer Perovskite Oxide Nanomembranes with Various Lattice Symmetries. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50386-50392. [PMID: 36287237 DOI: 10.1021/acsami.2c14746] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The design and fabrication of novel quantum devices in which exotic phenomena arise from moiré physics have sparked a new race of conceptualization and creation of artificial lattice structures. This interest is further extended to the research on thin-film transition metal oxides, with the goal of synthesizing twisted layers of perovskite oxides concurrently revealing moiré landscapes. By utilizing a sacrificial-layer-based approach, we show that such high-quality twisted bilayer oxide nanomembrane structures can be achieved. We observe atomic-scale distinct moiré patterns directly formed with different twist angles, and the symmetry-inequivalent nanomembranes can be stacked together to constitute new complex moiré configurations. This study paves the way to the construction of higher-order artificial oxide heterostructures based on different materials/symmetries and provides the materials foundation for investigating moiré-related electronic effects in an expanded selection of twisted oxide thin films.
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Affiliation(s)
- Jiaying Shen
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Zhengang Dong
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong999077, China
| | - MingQun Qi
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Yang Zhang
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin300071, P. R. China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing210096, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Danfeng Li
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong999077, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong SAR999077, China
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14
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Lee HY, Sarkar S, Reidy K, Kumar A, Klein J, Watanabe K, Taniguchi T, LeBeau JM, Ross FM, Gradečak S. Strong and Localized Luminescence from Interface Bubbles Between Stacked hBN Multilayers. Nat Commun 2022; 13:5000. [PMID: 36008409 PMCID: PMC9411575 DOI: 10.1038/s41467-022-32708-z] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Accepted: 08/12/2022] [Indexed: 11/09/2022] Open
Abstract
Extraordinary optoelectronic properties of van der Waals (vdW) heterostructures can be tuned via strain caused by mechanical deformation. Here, we demonstrate strong and localized luminescence in the ultraviolet region from interface bubbles between stacked multilayers of hexagonal boron nitride (hBN). Compared to bubbles in stacked monolayers, bubbles formed by stacking vdW multilayers show distinct mechanical behavior. We use this behavior to elucidate radius- and thickness-dependent bubble geometry and the resulting strain across the bubble, from which we establish the thickness-dependent bending rigidity of hBN multilayers. We then utilize the polymeric material confined within the bubbles to modify the bubble geometry under electron beam irradiation, resulting in strong luminescence and formation of optical standing waves. Our results open a route to design and modulate microscopic-scale optical cavities via strain engineering in vdW materials, which we suggest will be relevant to both fundamental mechanical studies and optoelectronic applications.
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Affiliation(s)
- Hae Yeon Lee
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA, 02141, USA
| | - Soumya Sarkar
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore, Singapore
| | - Kate Reidy
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA, 02141, USA
| | - Abinash Kumar
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA, 02141, USA
| | - Julian Klein
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA, 02141, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - James M LeBeau
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA, 02141, USA
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA, 02141, USA
| | - Silvija Gradečak
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA, 02141, USA. .,Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore, Singapore.
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15
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Klaiss R, Ziegler J, Miller D, Zappitelli K, Watanabe K, Taniguchi T, Alemán B. Uncovering the morphological effects of high-energy Ga + focused ion beam milling on hBN single-photon emitter fabrication. J Chem Phys 2022; 157:074703. [DOI: 10.1063/5.0097581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
Many techniques to fabricate complex nanostructures and quantum emitting defects in low dimensional materials for quantum information technologies rely on the patterning capabilities of focused ion beam (FIB) systems. In particular, the ability to pattern arrays of bright and stable room temperature single-photon emitters (SPEs) in 2D wide-bandgap insulator hexagonal boron nitride (hBN) via high-energy heavy-ion FIB allows for direct placement of SPEs without structured substrates or polymer-reliant lithography steps. However, the process parameters needed to create hBN SPEs with this technique are dependent on the growth method of the material chosen. Moreover, morphological damage induced by high-energy heavy-ion exposure may further influence the successful creation of SPEs. In this work, we perform atomic force microscopy to characterize the surface morphology of hBN regions patterned by Ga+ FIB to create SPEs at a range of ion doses and find that material swelling, and not milling as expected, is most strongly and positively correlated with the onset of non-zero SPE yields. Furthermore, we simulate vacancy concentration profiles at each of the tested doses and propose a qualitative model to elucidate how Ga+ FIB patterning creates isolated SPEs that is consistent with observed optical and morphological characteristics and is dependent on the consideration of void nucleation and growth from vacancy clusters. Our results provide novel insight into the formation of hBN SPEs created by high-energy heavy-ion milling that can be leveraged for monolithic hBN photonic devices and could be applied to a wide range of low-dimensional solid-state SPE hosts.
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Affiliation(s)
- Rachael Klaiss
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Joshua Ziegler
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - David Miller
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Kara Zappitelli
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Benjamín Alemán
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
- Phil and Penny Knight Campus for Accelerating Scientific Impact, University of Oregon, Eugene, Oregon 97403, USA
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16
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Su C, Zhang F, Kahn S, Shevitski B, Jiang J, Dai C, Ungar A, Park JH, Watanabe K, Taniguchi T, Kong J, Tang Z, Zhang W, Wang F, Crommie M, Louie SG, Aloni S, Zettl A. Tuning colour centres at a twisted hexagonal boron nitride interface. NATURE MATERIALS 2022; 21:896-902. [PMID: 35835818 DOI: 10.1038/s41563-022-01303-4] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Accepted: 05/30/2022] [Indexed: 06/15/2023]
Abstract
The colour centre platform holds promise for quantum technologies, and hexagonal boron nitride has attracted attention due to the high brightness and stability, optically addressable spin states and wide wavelength coverage discovered in its emitters. However, its application is hindered by the typically random defect distribution and complex mesoscopic environment. Here, employing cathodoluminescence, we demonstrate on-demand activation and control of colour centre emission at the twisted interface of two hexagonal boron nitride flakes. Further, we show that colour centre emission brightness can be enhanced by two orders of magnitude by tuning the twist angle. Additionally, by applying an external voltage, nearly 100% brightness modulation is achieved. Our ab initio GW and GW plus Bethe-Salpeter equation calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron-hole recombination. This mechanism is further exploited to draw nanoscale colour centre patterns using electron beams.
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Affiliation(s)
- Cong Su
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Fang Zhang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, Southern University of Science and Technology, Shenzhen, China
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
| | - Salman Kahn
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Brian Shevitski
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jingwei Jiang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Chunhui Dai
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Alex Ungar
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Ji-Hoon Park
- Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- Research Centre for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Jing Kong
- Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Zikang Tang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
| | - Wenqing Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Feng Wang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Michael Crommie
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Steven G Louie
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Shaul Aloni
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Alex Zettl
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA.
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17
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Dou Q, Mo J, Xu B, Gong N, Man T, Li Z, Bai G, Ma C, Qiu J, Hao J. Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating. OPTICS LETTERS 2022; 47:1578-1581. [PMID: 35363682 DOI: 10.1364/ol.451697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2021] [Accepted: 02/19/2022] [Indexed: 06/14/2023]
Abstract
Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2- at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O-, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.
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18
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Song SB, Yoon S, Kim SY, Yang S, Seo SY, Cha S, Jeong HW, Watanabe K, Taniguchi T, Lee GH, Kim JS, Jo MH, Kim J. Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures. Nat Commun 2021; 12:7134. [PMID: 34880247 PMCID: PMC8654827 DOI: 10.1038/s41467-021-27524-w] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Accepted: 11/18/2021] [Indexed: 11/15/2022] Open
Abstract
Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN.
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Affiliation(s)
- Su-Beom Song
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
| | - Sangho Yoon
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
| | - So Young Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Sera Yang
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
| | - Seung-Young Seo
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
| | - Soonyoung Cha
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
| | - Hyeon-Woo Jeong
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Jun Sung Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Moon-Ho Jo
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
| | - Jonghwan Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea.
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea.
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