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Kumaar D, Can M, Weigand H, Yarema O, Wintersteller S, Grange R, Wood V, Yarema M. Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu-Ge-Te Nanoparticles. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:6598-6607. [PMID: 39005536 PMCID: PMC11238340 DOI: 10.1021/acs.chemmater.4c01009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2024] [Revised: 06/07/2024] [Accepted: 06/10/2024] [Indexed: 07/16/2024]
Abstract
Phase-change memory (PCM) technology has recently attracted a vivid interest for neuromorphic applications, in-memory computing, and photonic integration due to the tunable refractive index and electrical conductivity between the amorphous and crystalline material states. Despite this, it is increasingly challenging to scale down the device dimensions of conventionally sputtered PCM memory arrays, restricting the implementation of PCM technology in mass applications such as consumer electronics. Here, we report the synthesis and structural study of sub-10 nm Cu-Ge-Te (CGT) nanoparticles as suitable candidates for low-cost and ultrasmall PCM devices. We show that our synthesis approach can accurately control the structure of the CGT colloids, such as composition-tuned CGT amorphous nanoparticles as well as crystalline CGT nanoparticles with trigonal α-GeTe and tetragonal Cu2GeTe3 phases. In situ characterization techniques such as high-temperature X-ray diffraction and X-ray absorption spectroscopy reveal that Cu doping in GeTe improves the thermal properties and amorphous phase stability of the nanoparticles, in addition to nanoscale effects, which enhance the nonvolatility characteristics of CGT nanoparticles even further. Moreover, we demonstrate the thin-film fabrication of CGT nanoparticles and characterize their optical properties with spectroscopic ellipsometry measurements. We reveal that CGT nanoparticle thin films exhibit a negative reflectivity change and have good reflectivity contrast in the near-IR spectrum. Our work promotes the possibility to use PCM in nanoparticle form for applications such as electro-optical switching devices, metalenses, reflectivity displays, and phase-change IR devices.
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Affiliation(s)
- Dhananjeya Kumaar
- Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Matthias Can
- Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Helena Weigand
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Olesya Yarema
- Materials and Device Engineering, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Simon Wintersteller
- Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Rachel Grange
- Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Vanessa Wood
- Materials and Device Engineering, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092 Zürich, Switzerland
| | - Maksym Yarema
- Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092 Zürich, Switzerland
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2
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Wu X, Khan AI, Lee H, Hsu CF, Zhang H, Yu H, Roy N, Davydov AV, Takeuchi I, Bao X, Wong HSP, Pop E. Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory. Nat Commun 2024; 15:13. [PMID: 38253559 PMCID: PMC10803317 DOI: 10.1038/s41467-023-42792-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 10/20/2023] [Indexed: 01/24/2024] Open
Abstract
Data-centric applications are pushing the limits of energy-efficiency in today's computing systems, including those based on phase-change memory (PCM). This technology must achieve low-power and stable operation at nanoscale dimensions to succeed in high-density memory arrays. Here we use a novel combination of phase-change material superlattices and nanocomposites (based on Ge4Sb6Te7), to achieve record-low power density ≈ 5 MW/cm2 and ≈ 0.7 V switching voltage (compatible with modern logic processors) in PCM devices with the smallest dimensions to date (≈ 40 nm) for a superlattice technology on a CMOS-compatible substrate. These devices also simultaneously exhibit low resistance drift with 8 resistance states, good endurance (≈ 2 × 108 cycles), and fast switching (≈ 40 ns). The efficient switching is enabled by strong heat confinement within the superlattice materials and the nanoscale device dimensions. The microstructural properties of the Ge4Sb6Te7 nanocomposite and its high crystallization temperature ensure the fast-switching speed and stability in our superlattice PCM devices. These results re-establish PCM technology as one of the frontrunners for energy-efficient data storage and computing.
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Affiliation(s)
- Xiangjin Wu
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
| | - Asir Intisar Khan
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
| | - Hengyuan Lee
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan
| | - Chen-Feng Hsu
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan
| | - Huairuo Zhang
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
- Theiss Research, Inc., La Jolla, CA, USA
| | - Heshan Yu
- Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA
- School of Microelectronics, Tianjin University, Tianjin, China
| | - Neel Roy
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
| | - Albert V Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
| | - Ichiro Takeuchi
- Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA
| | - Xinyu Bao
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), San Jose, CA, USA
| | - H-S Philip Wong
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA.
- Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.
- Precourt Institute for Energy, Stanford University, Stanford, CA, USA.
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3
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Zhao J, Khan AI, Efremov MY, Ye Z, Wu X, Kim K, Lee Z, Wong HSP, Pop E, Allen LH. Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry. NANO LETTERS 2023; 23:4587-4594. [PMID: 37171275 DOI: 10.1021/acs.nanolett.3c01049] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Phase-change superlattices with nanometer thin sublayers are promising for low-power phase-change memory (PCM) on rigid and flexible platforms. However, the thermodynamics of the phase transition in such nanoscale superlattices remain unexplored, especially at ultrafast scanning rates, which is crucial for our fundamental understanding of superlattice-based PCM. Here, we probe the phase transition of Sb2Te3 (ST)/Ge2Sb2Te5 (GST) superlattices using nanocalorimetry with a monolayer sensitivity (∼1 Å) and a fast scanning rate (105 K/s). For a 2/1.8 nm/nm Sb2Te3/GST superlattice, we observe an endothermic melting transition with an ∼240 °C decrease in temperature and an ∼8-fold decrease in enthalpy compared to those for the melting of GST, providing key thermodynamic insights into the low-power switching of superlattice-based PCM. Nanocalorimetry measurements for Sb2Te3 alone demonstrate an intrinsic premelting similar to the unique phase transition of superlattices, thus revealing a critical role of the Sb2Te3 sublayer within our superlattices. These results advance our understanding of superlattices for energy-efficient data storage and computing.
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Affiliation(s)
- Jie Zhao
- Department of Materials Science and Engineering, Coordinated Science Laboratory and Frederick-Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Asir Intisar Khan
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Mikhail Y Efremov
- College of Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Zichao Ye
- Department of Materials Science and Engineering, Coordinated Science Laboratory and Frederick-Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Xiangjin Wu
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Kangsik Kim
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - H-S Philip Wong
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Leslie H Allen
- Department of Materials Science and Engineering, Coordinated Science Laboratory and Frederick-Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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4
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Logarithmic sensitivity ratio elucidates thermal transport physics in multivariate thermoreflectance experiments. FUNDAMENTAL RESEARCH 2023. [DOI: 10.1016/j.fmre.2023.01.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/25/2023] Open
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5
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Khan AI, Yu H, Zhang H, Goggin JR, Kwon H, Wu X, Perez C, Neilson KM, Asheghi M, Goodson KE, Vora PM, Davydov A, Takeuchi I, Pop E. Energy Efficient Neuro-Inspired Phase-Change Memory Based on Ge 4 Sb 6 Te 7 as a Novel Epitaxial Nanocomposite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2300107. [PMID: 36720651 DOI: 10.1002/adma.202300107] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Indexed: 06/17/2023]
Abstract
Phase-change memory (PCM) is a promising candidate for neuro-inspired, data-intensive artificial intelligence applications, which relies on the physical attributes of PCM materials including gradual change of resistance states and multilevel operation with low resistance drift. However, achieving these attributes simultaneously remains a fundamental challenge for PCM materials such as Ge2 Sb2 Te5 , the most commonly used material. Here bi-directional gradual resistance changes with ≈10× resistance window using low energy pulses are demonstrated in nanoscale PCM devices based on Ge4 Sb6 Te7 , a new phase-change nanocomposite material . These devices show 13 resistance levels with low resistance drift for the first 8 levels, a resistance on/off ratio of ≈1000, and low variability. These attributes are enabled by the unique microstructural and electro-thermal properties of Ge4 Sb6 Te7 , a nanocomposite consisting of epitaxial SbTe nanoclusters within the Ge-Sb-Te matrix, and a higher crystallization but lower melting temperature than Ge2 Sb2 Te5 . These results advance the pathway toward energy-efficient analog computing using PCM.
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Affiliation(s)
- Asir Intisar Khan
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Heshan Yu
- Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742, USA
| | - Huairuo Zhang
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
- Theiss Research, Inc., La Jolla, CA, 92037, USA
| | - John R Goggin
- Department of Physics and Astronomy, George Mason University, Fairfax, VA, 22030, USA
- Quantum Science and Engineering Center, George Mason University, Fairfax, VA, 22030, USA
| | - Heungdong Kwon
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Xiangjin Wu
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Christopher Perez
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Kathryn M Neilson
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Mehdi Asheghi
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Kenneth E Goodson
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Patrick M Vora
- Department of Physics and Astronomy, George Mason University, Fairfax, VA, 22030, USA
- Quantum Science and Engineering Center, George Mason University, Fairfax, VA, 22030, USA
| | - Albert Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
- Quantum Science and Engineering Center, George Mason University, Fairfax, VA, 22030, USA
| | - Ichiro Takeuchi
- Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742, USA
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA
- Department of Materials Science & Engineering, Stanford University, Stanford, CA, 94305, USA
- Precourt Institute for Energy, Stanford University, Stanford, CA, 94305, USA
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6
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Kim D, Kim Y, Oh JS, Lee C, Lim H, Yang CW, Sim E, Cho MH. Conversion between Metavalent and Covalent Bond in Metastable Superlattices Composed of 2D and 3D Sublayers. ACS NANO 2022; 16:20758-20769. [PMID: 36469438 DOI: 10.1021/acsnano.2c07811] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Reversible conversion over multimillion times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, an extended category of crystal structures from stable states via redistribution of vacancies, research on kinetic behavior of the vacancies is highly in demand. However, it remains lacking due to difficulties with experimental analysis. Herein, the direct observation of the evolution of chemical states of vacancies clarifies the behavior by combining analysis on charge density distribution, electrical conductivity, and crystal structures. Site-switching of vacancies of Sb2Te3 gradually occurs with diverged energy barriers owing to their own activation code: the accumulation of vacancies triggers spontaneous gliding along atomic planes to relieve electrostatic repulsion. Studies on the behavior can be further applied to multiphase superlattices composed of Sb2Te3 (2D) and GeTe (3D) sublayers, which represent superior memory performances, but their operating mechanisms were still under debate due to their complexity. The site-switching is favorable (suppressed) when Te-Te bonds are formed as physisorption (chemisorption) over the interface between Sb2Te3 (2D) and GeTe (3D) sublayers driven by configurational entropic gain (electrostatic enthalpic loss). Depending on the type of interfaces between sublayers, phases of the superlattices are classified into metastable and stable states, where the conversion could only be achieved in the metastable state. From this comprehensive understanding on the operating mechanism via kinetic behaviors of vacancies and the metastability, further studies toward vacancy engineering are expected in versatile materials.
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Affiliation(s)
- Dasol Kim
- Department of Physics, Yonsei University, 03722 Seoul, Republic of Korea
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany
| | - Youngsam Kim
- Department of Chemistry, Yonsei University, 03722 Seoul, Republic of Korea
| | - Jin-Su Oh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 16419 Suwon, Republic of Korea
| | - Changwoo Lee
- Department of Physics, Yonsei University, 03722 Seoul, Republic of Korea
| | - Hyeonwook Lim
- Department of Physics, Yonsei University, 03722 Seoul, Republic of Korea
| | - Cheol-Woong Yang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 16419 Suwon, Republic of Korea
| | - Eunji Sim
- Department of Chemistry, Yonsei University, 03722 Seoul, Republic of Korea
| | - Mann-Ho Cho
- Department of Physics, Yonsei University, 03722 Seoul, Republic of Korea
- Department of System Semiconductor Engineering, Yonsei University, 03722 Seoul, Republic of Korea
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7
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Yoo C, Jeon JW, Yoon S, Cheng Y, Han G, Choi W, Park B, Jeon G, Jeon S, Kim W, Zheng Y, Lee J, Ahn J, Cho S, Clendenning SB, Karpov IV, Lee YK, Choi JH, Hwang CS. Atomic Layer Deposition of Sb 2 Te 3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2207143. [PMID: 36271720 DOI: 10.1002/adma.202207143] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 10/11/2022] [Indexed: 06/16/2023]
Abstract
Atomic layer deposition (ALD) of Sb2 Te3 /GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb2 Te3 enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge2 Sb2 Te5 alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge2 Sb2 Te5 alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.
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Affiliation(s)
- Chanyoung Yoo
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jeong Woo Jeon
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seungjae Yoon
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Gyuseung Han
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Wonho Choi
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byongwoo Park
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Gwangsik Jeon
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sangmin Jeon
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Woohyun Kim
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yonghui Zheng
- Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Jongho Lee
- SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea
| | - Junku Ahn
- SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea
| | - Sunglae Cho
- SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea
| | | | - Ilya V Karpov
- Components Research, Intel Corporation, Hillsboro, OR, 97124, USA
| | - Yoon Kyung Lee
- Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea
| | - Jung-Hae Choi
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Cheol Seong Hwang
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
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8
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Khan AI, Wu X, Perez C, Won B, Kim K, Ramesh P, Kwon H, Tung MC, Lee Z, Oh IK, Saraswat K, Asheghi M, Goodson KE, Wong HSP, Pop E. Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance. NANO LETTERS 2022; 22:6285-6291. [PMID: 35876819 DOI: 10.1021/acs.nanolett.2c01869] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Superlattice (SL) phase change materials have shown promise to reduce the switching current and resistance drift of phase change memory (PCM). However, the effects of internal SL interfaces and intermixing on PCM performance remain unexplored, although these are essential to understand and ensure reliable memory operation. Here, using nanometer-thin layers of Ge2Sb2Te5 and Sb2Te3 in SL-PCM, we uncover that both switching current density (Jreset) and resistance drift coefficient (v) decrease as the SL period thickness is reduced (i.e., higher interface density); however, interface intermixing within the SL increases both. The signatures of distinct versus intermixed interfaces also show up in transmission electron microscopy, X-ray diffraction, and thermal conductivity measurements of our SL films. Combining the lessons learned, we simultaneously achieve low Jreset ≈ 3-4 MA/cm2 and ultralow v ≈ 0.002 in mushroom-cell SL-PCM with ∼110 nm bottom contact diameter, thus advancing SL-PCM technology for high-density storage and neuromorphic applications.
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Affiliation(s)
- Asir Intisar Khan
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Xiangjin Wu
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Christopher Perez
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - Byoungjun Won
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Kangsik Kim
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea
| | - Pranav Ramesh
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Heungdong Kwon
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - Maryann C Tung
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Il-Kwon Oh
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Krishna Saraswat
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Mehdi Asheghi
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - Kenneth E Goodson
- Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
| | - H-S Philip Wong
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
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9
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Khan AI, Daus A, Islam R, Neilson KM, Lee HR, Wong HSP, Pop E. Ultralow-switching current density multilevel phase-change memory on a flexible substrate. Science 2021; 373:1243-1247. [PMID: 34516795 DOI: 10.1126/science.abj1261] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- Asir Intisar Khan
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Alwin Daus
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Raisul Islam
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Kathryn M Neilson
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Hye Ryoung Lee
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.,Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 USA
| | - H-S Philip Wong
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.,Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 USA.,Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA
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10
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Affiliation(s)
- Shi En Kim
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL 60637, USA
| | - David G Cahill
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61822, USA.
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