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Merces L, Ferro LMM, Nawaz A, Sonar P. Advanced Neuromorphic Applications Enabled by Synaptic Ion-Gating Vertical Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2305611. [PMID: 38757653 DOI: 10.1002/advs.202305611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 12/07/2023] [Indexed: 05/18/2024]
Abstract
Bioinspired synaptic devices have shown great potential in artificial intelligence and neuromorphic electronics. Low energy consumption, multi-modal sensing and recording, and multifunctional integration are critical aspects limiting their applications. Recently, a new synaptic device architecture, the ion-gating vertical transistor (IGVT), has been successfully realized and timely applied to perform brain-like perception, such as artificial vision, touch, taste, and hearing. In this short time, IGVTs have already achieved faster data processing speeds and more promising memory capabilities than many conventional neuromorphic devices, even while operating at lower voltages and consuming less power. This work focuses on the cutting-edge progress of IGVT technology, from outstanding fabrication strategies to the design and realization of low-voltage multi-sensing IGVTs for artificial-synapse applications. The fundamental concepts of artificial synaptic IGVTs, such as signal processing, transduction, plasticity, and multi-stimulus perception are discussed comprehensively. The contribution draws special attention to the development and optimization of multi-modal flexible sensor technologies and presents a roadmap for future high-end theoretical and experimental advancements in neuromorphic research that are mostly achievable by the synaptic IGVTs.
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Affiliation(s)
- Leandro Merces
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Letícia Mariê Minatogau Ferro
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
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2
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Song J, Liu H, Zhao Z, Lin P, Yan F. Flexible Organic Transistors for Biosensing: Devices and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2300034. [PMID: 36853083 DOI: 10.1002/adma.202300034] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Revised: 02/20/2023] [Indexed: 06/18/2023]
Abstract
Flexible and stretchable biosensors can offer seamless and conformable biological-electronic interfaces for continuously acquiring high-fidelity signals, permitting numerous emerging applications. Organic thin film transistors (OTFTs) are ideal transducers for flexible and stretchable biosensing due to their soft nature, inherent amplification function, biocompatibility, ease of functionalization, low cost, and device diversity. In consideration of the rapid advances in flexible-OTFT-based biosensors and their broad applications, herein, a timely and comprehensive review is provided. It starts with a detailed introduction to the features of various OTFTs including organic field-effect transistors and organic electrochemical transistors, and the functionalization strategies for biosensing, with a highlight on the seminal work and up-to-date achievements. Then, the applications of flexible-OTFT-based biosensors in wearable, implantable, and portable electronics, as well as neuromorphic biointerfaces are detailed. Subsequently, special attention is paid to emerging stretchable organic transistors including planar and fibrous devices. The routes to impart stretchability, including structural engineering and material engineering, are discussed, and the implementations of stretchable organic transistors in e-skin and smart textiles are included. Finally, the remaining challenges and the future opportunities in this field are summarized.
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Affiliation(s)
- Jiajun Song
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Hong Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Zeyu Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Peng Lin
- Shenzhen Key Laboratory of Special Functional Materials and Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
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3
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Lee DH, Kim S, Woo G, Kim T, Kim YJ, Yoo H. A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38593271 DOI: 10.1021/acsami.3c19471] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Conventional transistors have long emphasized signal modulation and amplification, often sidelining polarity considerations. However, the recent emergence of negative differential transconductance, characterized by a drain current decline during gate voltage sweeping, has illuminated an unconventional path in transistor technology. This phenomenon promises to simplify the implementation of ternary logic circuits and enhance energy efficiency, especially in multivalued logic applications. Our research has culminated in the development of a sophisticated mixed transconductance transistor (M-T device) founded on a precise Te and IGZO heterojunction. The M-T device exhibits a sequence of intriguing phenomena, zero differential transconductance (ZDT), positive differential transconductance (PDT), and negative differential transconductance (NDT) contingent on applied gate voltage. We clarify its operation using a three-segment equivalent circuit model and validate its viability with IGZO TFT, Te TFT, and Te/IGZO TFT components. In a concluding demonstration, the M-T device interconnected with Te TFT achieves a ternary inverter with an intermediate logic state. Remarkably, this configuration seamlessly transitions into a binary inverter when it is exposed to light.
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Affiliation(s)
- Dong Hyun Lee
- Department of Electronic Engineering, Gachon University, Seongnam, Gyeonggi 13120, Republic of Korea
| | - Somi Kim
- Department of Electronic Engineering, Gachon University, Seongnam, Gyeonggi 13120, Republic of Korea
| | - Gunhoo Woo
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Yeong Jae Kim
- Ceramic Total Solution Center, Korea Institute of Ceramic Engineering and Technology, Icheon 17303, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam, Gyeonggi 13120, Republic of Korea
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4
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Yang Q, Luo ZD, Duan H, Gan X, Zhang D, Li Y, Tan D, Seidel J, Chen W, Liu Y, Hao Y, Han G. Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures. Nat Commun 2024; 15:1138. [PMID: 38326391 PMCID: PMC10850082 DOI: 10.1038/s41467-024-45482-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 01/25/2024] [Indexed: 02/09/2024] Open
Abstract
Two-dimensional (2D) semiconductor-based vertical-transport field-effect transistors (VTFETs) - in which the current flows perpendicularly to the substrate surface direction - are in the drive to surmount the stringent downscaling constraints faced by the conventional planar FETs. However, low-power device operation with a sub-60 mV/dec subthreshold swing (SS) at room temperature along with an ultra-scaled channel length remains challenging for 2D semiconductor-based VTFETs. Here, we report steep-slope VTFETs that combine a gate-controllable van der Waals heterojunction and a metal-filamentary threshold switch (TS), featuring a vertical transport channel thinner than 5 nm and sub-thermionic turn-on characteristics. The integrated TS-VTFETs were realised with efficient current switching behaviours, exhibiting a current modulation ratio exceeding 1 × 108 and an average sub-60 mV/dec SS over 6 decades of drain current. The proposed TS-VTFETs with excellent area- and energy-efficiency could help to tackle the performance degradation-device downscaling dilemma faced by logic transistor technologies.
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Affiliation(s)
- Qiyu Yang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Zheng-Dong Luo
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
- Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China.
| | - Huali Duan
- ZJU-UIUC Institute, International Campus, Zhejiang University, Haining, 314400, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Dawei Zhang
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney, NSW 2052, Australia
| | - Yuewen Li
- Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
| | - Dongxin Tan
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Jan Seidel
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney, NSW 2052, Australia
| | - Wenchao Chen
- ZJU-UIUC Institute, International Campus, Zhejiang University, Haining, 314400, China
| | - Yan Liu
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
- Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China.
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Genquan Han
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China
- Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
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5
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Nieuwenhuis AF, Duarte Sánchez DF, Cui JZ, Lemay SG. Stochastic Electrical Detection of Single Ion-Gated Semiconducting Polymers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2307912. [PMID: 37758267 DOI: 10.1002/adma.202307912] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2023] [Indexed: 10/03/2023]
Abstract
Semiconducting polymer chains constitute the building blocks for a wide range of electronic materials and devices. However, most of their electrical characteristics at the single-molecule level have received little attention. Elucidating these properties can help understanding performance limits and enable new applications. Here, coupled ionic-electronic charge transport is exploited to measure the quasi-1D electrical current through long single conjugated polymer chains as they form transient contacts with electrodes separated by ≈10 nm. Fluctuations between internal conformations of the individual polymers are resolved as abrupt, multilevel switches in the electrical current. This behavior is consistent with the theoretical simulations based on the worm-like-chain (WLC) model for semiflexible polymers. In addition to probing the intrinsic properties of single semiconducting polymer chains, the results provide an unprecedented window into the dynamics of random-coil polymers and enable the use of semiconducting polymers as electrical labels for single-molecule (bio)sensing assays.
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Affiliation(s)
- Ab F Nieuwenhuis
- University of Twente, Drienerlolaan 5, Enschede, 7522 NB, Netherlands
| | | | - Jin Z Cui
- University of Twente, Drienerlolaan 5, Enschede, 7522 NB, Netherlands
| | - Serge G Lemay
- University of Twente, Drienerlolaan 5, Enschede, 7522 NB, Netherlands
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6
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Eckel C, Weitz RT. Bioelectronics goes vertical. NATURE MATERIALS 2023; 22:1165-1166. [PMID: 37758972 DOI: 10.1038/s41563-023-01650-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/29/2023]
Affiliation(s)
- C Eckel
- 1st Institute of Physics, Faculty of Physics, Georg-August-University of Göttingen, Göttingen, Germany
| | - R T Weitz
- 1st Institute of Physics, Faculty of Physics, Georg-August-University of Göttingen, Göttingen, Germany.
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7
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Jung SH, Yang JS, Cho HK. Ambipolar operation of progressively designed symmetric bidirectional transistors fabricated using single-channel vertical transistor and electrochemically prepared copper oxide. MATERIALS HORIZONS 2023; 10:1373-1384. [PMID: 36744967 DOI: 10.1039/d2mh01413k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In this study, a symmetric bidirectional transistors (SBT) is proposed. The device simultaneously implements the "strong-inversion" and "accumulation" mechanisms of a metal-oxide semiconductor field-effect transistor and TFT, respectively, in different bias directions in a single-channel vertical transistor (V-Tr). This ideal SBT device is designed and fabricated by selecting appropriate materials exhibiting a narrow bandgap and intrinsic characteristics of Sb-doped p-type Cu2O, using a V-Tr to optimize the device structure for high-field-induced short-channel and ambipolar operation, and implementing facile electrochemical deposition for channel and plasma channel treatments. To adopt artificial conductivity control for producing the transporting path of minority electron carriers, the patterned-channel-layer sidewall is locally treated using oxygen plasma, thereby suppressing the minority-carrier self-compensation. The SBT device exhibits an excellent on-current (i.e., symmetric accumulation and strong inversion modes in the p- and n-type channel regions, respectively) and excellent midregion off-current, similar to those of ideal ambipolar transistors. Moreover, owing to multilevel signals and excellent inverter behaviors, the SBT device is suitable for application in complementary-metal-oxide-semiconductors and logic memories.
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Affiliation(s)
- Sung Hyeon Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Ji Sook Yang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
- Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
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8
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Wu X, Gao C, Chen Q, Yan Y, Zhang G, Guo T, Chen H. High-performance vertical field-effect organic photovoltaics. Nat Commun 2023; 14:1579. [PMID: 36949063 PMCID: PMC10033512 DOI: 10.1038/s41467-023-37174-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2022] [Accepted: 03/06/2023] [Indexed: 03/24/2023] Open
Abstract
Limited by the inherent energy loss (Eloss) in carrier transport process, the device efficiency of organic solar cells shows inferior to traditional inorganic photovoltaic devices. Generally, molecular design, morphology optimization and interfacial engineering are usually required to alleviate Eloss. Here, vertical field-effect organic photovoltaic (VFEOPV) by integrating an bulk-heterojunction (BHJ) organic photovoltaic (OPV) with vertical field effect transistor (VFET) is invented, in which VFET generates a large, uneven, internal electric field, eliminating the requirement for driving force to dissociate excitons and prevents non-radiative recombination in OPV. In this way, the performance of solar cell can be well controlled by the gate voltage of VFET and the Eloss of VFEOPVs based on J71: ITIC system is dramatically reduced below 0.2 eV, significantly improving power conversion efficiency (PCE) from 10% to 18% under gate voltage of 0.9 V, which only causes negligible additional power consumption (~10-4mJ/cm2). Besides, the device also exhibits multi-functionality including transistor and phototransistors with excellent photodector performance. This work provides a new and general strategy to improve the OPV performance which is compatible with present optimization methods, and can be applied to improve PCE of other types of solar cells such as Perovskite and inorganic solar cells.
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Affiliation(s)
- Xiaomin Wu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou, 350007, China
| | - Changsong Gao
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Yujie Yan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Guocheng Zhang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Research Center for Microelectronics Technology, Fujian University of Technology, Fuzhou, 350108, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China.
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China.
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9
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Nawaz A, Merces L, Ferro LMM, Sonar P, Bufon CCB. Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204804. [PMID: 36124375 DOI: 10.1002/adma.202204804] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 09/13/2022] [Indexed: 06/15/2023]
Abstract
The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.
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Affiliation(s)
- Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Leandro Merces
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
| | - Letícia M M Ferro
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, São Paulo, 13083-970, Brazil
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
| | - Carlos C B Bufon
- MackGraphe - Graphene and Nanomaterials Research Center, Mackenzie Presbyterian Institute, São Paulo, 01302-907, Brazil
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Fiedler J, Berland K, Borchert JW, Corkery RW, Eisfeld A, Gelbwaser-Klimovsky D, Greve MM, Holst B, Jacobs K, Krüger M, Parsons DF, Persson C, Presselt M, Reisinger T, Scheel S, Stienkemeier F, Tømterud M, Walter M, Weitz RT, Zalieckas J. Perspectives on weak interactions in complex materials at different length scales. Phys Chem Chem Phys 2023; 25:2671-2705. [PMID: 36637007 DOI: 10.1039/d2cp03349f] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Nanocomposite materials consist of nanometer-sized quantum objects such as atoms, molecules, voids or nanoparticles embedded in a host material. These quantum objects can be exploited as a super-structure, which can be designed to create material properties targeted for specific applications. For electromagnetism, such targeted properties include field enhancements around the bandgap of a semiconductor used for solar cells, directional decay in topological insulators, high kinetic inductance in superconducting circuits, and many more. Despite very different application areas, all of these properties are united by the common aim of exploiting collective interaction effects between quantum objects. The literature on the topic spreads over very many different disciplines and scientific communities. In this review, we present a cross-disciplinary overview of different approaches for the creation, analysis and theoretical description of nanocomposites with applications related to electromagnetic properties.
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Affiliation(s)
- J Fiedler
- Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen, Norway.
| | - K Berland
- Department of Mechanical Engineering and Technology Management, Norwegian University of Life Sciences, Campus Ås Universitetstunet 3, 1430 Ås, Norway
| | - J W Borchert
- 1st Institute of Physics, Georg-August-University, Göttingen, Germany
| | - R W Corkery
- Surface and Corrosion Science, Department of Chemistry, KTH Royal Institute of Technology, SE 100 44 Stockholm, Sweden
| | - A Eisfeld
- Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Strasse 38, 01187 Dresden, Germany
| | - D Gelbwaser-Klimovsky
- Schulich Faculty of Chemistry and Helen Diller Quantum Center, Technion-Israel Institute of Technology, Haifa 3200003, Israel
| | - M M Greve
- Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen, Norway.
| | - B Holst
- Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen, Norway.
| | - K Jacobs
- Experimental Physics, Saarland University, Center for Biophysics, 66123 Saarbrücken, Germany.,Max Planck School Matter to Life, 69120 Heidelberg, Germany
| | - M Krüger
- Institute for Theoretical Physics, Georg-August-Universität Göttingen, 37073 Göttingen, Germany
| | - D F Parsons
- Department of Chemical and Geological Sciences, University of Cagliari, Cittadella Universitaria, 09042 Monserrato, CA, Italy
| | - C Persson
- Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, 0316 Oslo, Norway.,Department of Materials Science and Engineering, KTH Royal Institute of Technology, 100 44 Stockholm, Sweden
| | - M Presselt
- Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena, Germany
| | - T Reisinger
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
| | - S Scheel
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23-24, 18059 Rostock, Germany
| | - F Stienkemeier
- Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg, Germany
| | - M Tømterud
- Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen, Norway.
| | - M Walter
- Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg, Germany
| | - R T Weitz
- 1st Institute of Physics, Georg-August-University, Göttingen, Germany
| | - J Zalieckas
- Department of Physics and Technology, University of Bergen, Allégaten 55, 5007 Bergen, Norway.
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11
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Zschieschang U, Waizmann U, Weis J, Borchert JW, Klauk H. Nanoscale flexible organic thin-film transistors. SCIENCE ADVANCES 2022; 8:eabm9845. [PMID: 35363511 PMCID: PMC10938573 DOI: 10.1126/sciadv.abm9845] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Accepted: 02/10/2022] [Indexed: 06/14/2023]
Abstract
Direct-write electron-beam lithography has been used to fabricate low-voltage p-channel and n-channel organic thin-film transistors with channel lengths as small as 200 nm and gate-to-contact overlaps as small as 100 nm on glass and on flexible transparent polymeric substrates. The p-channel transistors have on/off current ratios as large as 4 × 109 and subthreshold swings as small as 70 mV/decade, and the n-channel transistors have on/off ratios up to 108 and subthreshold swings as low as 80 mV/decade. These are the largest on/off current ratios reported to date for nanoscale organic transistors. Inverters based on two p-channel transistors with a channel length of 200 nm and gate-to-contact overlaps of 100 nm display characteristic switching-delay time constants between 80 and 40 ns at supply voltages between 1 and 2 V, corresponding to a supply voltage-normalized frequency of about 6 MHz/V. This is the highest voltage-normalized dynamic performance reported to date for organic transistors fabricated by maskless lithography.
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Affiliation(s)
- Ute Zschieschang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany
| | - Ulrike Waizmann
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany
| | - Jürgen Weis
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany
| | - James W. Borchert
- 1st Institute of Physics, Georg August University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
| | - Hagen Klauk
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany
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Jung SH, Yang JS, Kim YB, Deshpande NG, Kim DS, Choi JH, Suh HW, Lee HH, Cho HK. Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability. MATERIALS HORIZONS 2022; 9:1010-1022. [PMID: 34985074 DOI: 10.1039/d1mh01568k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A strategically designed electrodeposition method is proposed for the coating of p-type copper(i) oxide (Cu2O) channels for oxide thin film transistors. To date, conventional p-type oxide semiconductors have revealed a poor mobility and stability and this has obstructed the development of all oxide based logic devices. Furthermore, previous studies on p-type oxide transistors have been limited by the use of a typical planar type configuration. Our Cu2O electrodeposition method designed by incorporating Sb element promotes vertical alignment of the grain boundaries (GBs) and it perfectly coincides with the charge transport direction from the source to the drain in the vertical field effect transistors. These vertically aligned GBs are bundle type GBs and are likely to be ideal for vertical transistors with supreme electrical performances owing to the structurally suppressed grain boundary charge scattering. This alignment of the GBs in the electrodeposited Sb doped Cu2O (Sb:Cu2O) also demonstrates a superior vertical taper profile with conventional wet chemical etching owing to the extremely preferential etching rate along the GBs. Surprisingly, the sidewall formation, with a smooth and steep morphology causes the formation of abrupt and non-defective gate insulator/channel interfaces for superior spacer-free vertical transistors. Consequently, the Cu2O vertical field effect transistors exhibit extraordinary transistor performances of Vth = 0.4 V, μFE = 8 cm2 V-1 s-1, subthreshold swing = 0.24 V dec-1, on/off current ratio = 2 × 108 and qualified electrical and long-term stability characteristics under various environments. To the best of our knowledge, this is the first reported study on an electrodeposited method to design troublesome p-type oxide Cu2O as novel vertical transistors. Finally, power efficient logic inverter circuits with unprecedented performances, such as good noise margins, remarkable gain values of 15.6 (2 VDD) and 62.7 (5 VDD), and high frequency operation up to 10 kHz, are demonstrated using these p-type Cu2O transistors by interconnecting n-type IGZO transistors.
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Affiliation(s)
- Sung Hyeon Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Ji Sook Yang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Young Been Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | | | - Dong Su Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Ji Hoon Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hee Won Suh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hak Hyeon Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea.
- Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
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Eckel C, Lenz J, Melianas A, Salleo A, Weitz RT. Nanoscopic Electrolyte-Gated Vertical Organic Transistors with Low Operation Voltage and Five Orders of Magnitude Switching Range for Neuromorphic Systems. NANO LETTERS 2022; 22:973-978. [PMID: 35049308 DOI: 10.1021/acs.nanolett.1c03832] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Electrolyte-gated organic transistors (EGOTs) are promising candidates as a new class of neuromorphic devices in hardware-based artificial neural networks that can outperform their complementary metal oxide semiconductor (CMOS) counterparts regarding processing speed and energy consumption. Several ways in which to implement such networks exist, two prominent methods of which can be implemented by nanoscopic vertical EGOTs, as we show here. First, nanoscopic vertical electrolyte-gated transistors with a donor-acceptor diketopyrrolopyrrole-terthiophene polymer as an active material can be used to reversibly switch the channel conductivity over five orders of magnitude (3.8 nS to 392 μS) and perform switching at low operation voltages down to -1 mV. Second, nanoscopic EGOTs can also mimic fundamental synaptic functions, and we show an interconnection of up to three transistors, highlighting the possibility to emulate biological nerve cells.
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Affiliation(s)
- Christian Eckel
- AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, 80539 Munich, Germany
- First Institute of Physics, Faculty of Physics, Georg-August-University, 37073 Göttingen, Germany
| | - Jakob Lenz
- AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, 80539 Munich, Germany
| | - Armantas Melianas
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Alberto Salleo
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - R Thomas Weitz
- AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, 80539 Munich, Germany
- First Institute of Physics, Faculty of Physics, Georg-August-University, 37073 Göttingen, Germany
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