Nanotextured Dynamics of a Light-Induced Phase Transition in VO2

Near-Field Nanoimaging of Phases and Carrier Dynamics in Vanadium Dioxide Nanobeams

The stable coexistence of insulating and metallic phases in strained vanadium dioxide (VO2) has garnered significant research interest due to the intriguing phase transition phenomena. However, the temporal behavior of charge carriers in different phases of VO2 remains elusive. Herein, we employ near-field optical nanoscopy to capture nanoscale alternating phase domains in bent VO2 nanobeams. By conducting transient measurements across the different phases, we observed a prolonged carrier recombination lifetime in the metallic phase of VO2, accompanied by an accelerated diffusion process. Our findings reveal nanoscale carrier dynamics in VO2 nanobeams, offering insights that can facilitate further investigations into phase-change materials and their potential applications in sensing and microelectromechanical devices.

Inhomogeneous Photosusceptibility of VO_{2} Films at the Nanoscale

Pump-probe nano-optical experiments were used to study the light-induced insulator to metal transition (IMT) in thin films of vanadium dioxide (VO_{2}), a prototypical correlated electron system. We show that inhomogeneous optical contrast is prompted by spatially uniform photoexcitation, indicating an inhomogeneous photosusceptibility of VO_{2}. We locally characterize temperature and time dependent variations of the photoexcitation threshold necessary to induce the IMT on picosecond timescales with hundred nanometer spatial resolution. We separately measure the critical temperature T_{L}, where the IMT onsets and the local transient electronic nano-optical contrast at the nanoscale. Our data reveal variations in the photosusceptibility of VO_{2} within nanoscopic regions characterized by the same critical temperature T_{L} where metallic domains can first nucleate.

Accelerated Nano-Optical Imaging through Sparse Sampling

The integration time and signal-to-noise ratio are inextricably linked when performing scanning probe microscopy based on raster scanning. This often yields a large lower bound on the measurement time, for example, in nano-optical imaging experiments performed using a scanning near-field optical microscope (SNOM). Here, we utilize sparse scanning augmented with Gaussian process regression to bypass the time constraint. We apply this approach to image charge-transfer polaritons in graphene residing on ruthenium trichloride (α-RuCl3) and obtain key features such as polariton damping and dispersion. Critically, nano-optical SNOM imaging data obtained via sparse sampling are in good agreement with those extracted from traditional raster scans but require 11 times fewer sampled points. As a result, Gaussian process-aided sparse spiral scans offer a major decrease in scanning time.

Evidence for Bootstrap Percolation Dynamics in a Photoinduced Phase Transition

Upon intense femtosecond photoexcitation, a many-body system can undergo a phase transition through a nonequilibrium route, but understanding these pathways remains an outstanding challenge. Here, we use time-resolved second harmonic generation to investigate a photoinduced phase transition in Ca_{3}Ru_{2}O_{7} and show that mesoscale inhomogeneity profoundly influences the transition dynamics. We observe a marked slowing down of the characteristic time τ that quantifies the transition between two structures. τ evolves nonmonotonically as a function of photoexcitation fluence, rising from below 200 fs to ∼1.4  ps, then falling again to below 200 fs. To account for the observed behavior, we perform a bootstrap percolation simulation that demonstrates how local structural interactions govern the transition kinetics. Our work highlights the importance of percolating mesoscale inhomogeneity in the dynamics of photoinduced phase transitions and provides a model that may be useful for understanding such transitions more broadly.

Multiphysical Field Modulated VO2 Device for Information Encryption

In the information explosion society, information security is highly demanded in the practical application, which raised a surge of interest in designing secure and reliable information transmission channels based on the inherent properties of emerging devices. Here, an innovative strategy to achieve the data encryption and reading during the data confidential transmission based on VO₂ device is proposed. Owing to the specific insulator-to-metal transition property of VO₂ , the phase transitions between the insulator and metallic states are modulated by the combination of electric field, temperature, and light radiation. These external stimulus-induced phase diagram is directly associated with the defined VO₂ device, which are applicable for control the "0" or "1" electrical logic state for the information encryption. A prototype device is fabricated on an epitaxial VO₂ film, which displayed a unique data encryption function with excellent stability. The current study not only demonstrated a multiphysical field-modulated VO₂ device for information encryption, but also supplied some clues for functional devices applications in other correlated oxide materials.

High-Strain-Induced Local Modification of the Electronic Properties of VO2 Thin Films

Vanadium dioxide (VO₂) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic distortions, as well as the symmetry change and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue toward mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO₂ while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO₂-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO₂. The tunneling barrier is formed by a very thin but persistently insulating surface layer of the VO₂. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO₂ properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.

Rapid simulations of hyperspectral near-field images of three-dimensional heterogeneous surfaces - part II

The modeling of the near-field interaction in the scattering-type scanning near-field optical microscope (s-SNOM) is rapidly advancing, although an accurate yet versatile modeling framework that can be easily adapted to various complex situations is still lacking. In this work, we propose a time-efficient numerical scheme in the quasi-electrostatic limit to capture the tip-sample interaction in the near field. This method considers an extended tip geometry, which is a significant advantage compared to the previously reported method based on the point-dipole approximation. Using this formalism, we investigate, among others, nontrivial questions such as uniaxial and biaxial anisotropy in the near-field interaction, the relationship between various experimental parameters (e.g. tip radius, tapping amplitude, etc.), and the tip-dependent spatial resolution. The demonstrated method further sheds light on the understanding of the contrast mechanism in s-SNOM imaging and spectroscopy, while also representing a valuable platform for future quantitative analysis of the experimental observations.

Multi-mode excitation drives disorder during the ultrafast melting of a C4-symmetry-broken phase

Spontaneous C4-symmetry breaking phases are ubiquitous in layered quantum materials, and often compete with other phases such as superconductivity. Preferential suppression of the symmetry broken phases by light has been used to explain non-equilibrium light induced superconductivity, metallicity, and the creation of metastable states. Key to understanding how these phases emerge is understanding how C4 symmetry is restored. A leading approach is based on time-dependent Ginzburg-Landau theory, which explains the coherence response seen in many systems. However, we show that, for the case of the single layered manganite La0.5Sr1.5MnO4, the theory fails. Instead, we find an ultrafast inhomogeneous disordering transition in which the mean-field order parameter no longer reflects the atomic-scale state of the system. Our results suggest that disorder may be common to light-induced phase transitions, and methods beyond the mean-field are necessary for understanding and manipulating photoinduced phases.