Determination of Grain-Boundary Structure and Electrostatic Characteristics in a SrTiO3 Bicrystal by Four-Dimensional Electron Microscopy

High-Entropy Transition Metal Phosphorus Trichalcogenides for Rapid Sodium Ion Diffusion

High-entropy strategies are regarded as a powerful means to enhance performance in energy storage fields. The improved properties are invariably ascribed to entropy stabilization or synergistic cocktail effect. Therefore, the manifested properties in such multicomponent materials are usually unpredictable. Elucidating the precise correlations between atomic structures and properties remains a challenge in high-entropy materials (HEMs). Herein, atomic-resolution scanning transmission electron microscopy annular dark field (STEM-ADF) imaging and four dimensions (4D)-STEM are combined to directly visualize atomic-scale structural and electric information in high-entropy FeMnNiVZnPS3. Aperiodic stacking is found in FeMnNiVZnPS3 accompanied by high-density strain soliton boundaries (SSBs). Theoretical calculation suggests that the formation of such structures is attributed to the imbalanced stress of distinct metal-sulfur bonds in FeMnNiVZnPS3. Interestingly, the electric field concentrates along the two sides of SSBs and gradually diminishes toward the two-dimensional (2D) plane to generate a unique electric field gradient, strongly promoting the ion-diffusion rate. Accordingly, high-entropy FeMnNiVZnPS3 demonstrates superior ion-diffusion coefficients of 10-9.7-10-8.3 cm2 s-1 and high-rate performance (311.5 mAh g-1 at 30 A g-1). This work provides an alternative way for the atomic-scale understanding and design of sophisticated HEMs, paving the way for property engineering in multi-component materials.

How space-charge behaviour at grain boundaries in electroceramic oxides is modified by two restricted equilibria

Determining the space-charge potential at grain boundaries in oxides by various experimental methods bears the promise of providing a comprehensive, quantitative description of interfacial defect chemistry. In this study, we draw attention to the problem of unifying data measured in different temperature ranges. We focus on unifying data from elevated-temperature electrical methods, such as impedance spectroscopy and current-voltage measurements, with data from room-temperature imaging techniques, such as Scanning Probe Microscopy (SPM), Transmission Electron Microscopy (TEM), and Atom Probe Tomography (APT). By means of continuum simulations, we calculate the space-charge potential Φ0 at grain boundaries in the model electroceramic oxide acceptor-doped SrTiO3, taking into account, first, a restricted equilibrium that leads to frozen-in acceptor-dopant profiles, and subsequently, a restricted equilibrium that leads to frozen-in bulk oxygen-vacancy concentrations. Our results indicate non-trivial differences between experimental values of Φ0 obtained from electrical and from imaging methods, differences that arise from the different measurement temperatures and that are aggravated by the restricted equilibria. We also show that grain-boundary widths determined from elemental acceptor-cation profiles will not, on principle, agree with the electrical width extracted from impedance spectroscopy data.

Valence-Ordered Thin-Film Nickelate with Tri-component Nickel Coordination Prepared by Topochemical Reduction

The metal-hydride-based "topochemical reduction" process has produced several thermodynamically unstable phases across various transition metal oxide series with unusual crystal structures and nontrivial ground states. Here, by such an oxygen (de-)intercalation method we synthesis a samarium nickelate with ordered nickel valences associated with tri-component coordination configurations. This structure, with a formula of Sm9Ni9O22 as revealed by four-dimensional scanning transmission electron microscopy (4D-STEM), emerges from the intricate planes of {303}pc ordered apical oxygen vacancies. X-ray spectroscopy measurements and ab initio calculations show the coexistence of square planar, pyramidal, and octahedral Ni sites with mono-, bi-, and tri-valences. It leads to an intense orbital polarization, charge-ordering, and a ground state with a strong electron localization marked by the disappearance of ligand-hole configuration at low temperature. This nickelate compound provides another example of previously inaccessible materials enabled by topotactic transformations and presents an interesting platform where mixed Ni valence can give rise to exotic phenomena.

Direct observation of strong surface reconstruction in partially reduced nickelate films

The polarity of a surface can affect the electronic and structural properties of oxide thin films through electrostatic effects. Understanding the mechanism behind these effects requires knowledge of the atomic structure and electrostatic characteristics at the surface. In this study, we use annular bright-field imaging to investigate the surface structure of a Pr0.8Sr0.2NiO2+x (0 < x < 1) film. We observe a polar distortion coupled with octahedral rotations in a fully oxidized Pr0.8Sr0.2NiO3 sample, and a stronger polar distortion in a partially reduced sample. Its spatial depth extent is about three unit cells from the surface. Additionally, we use four-dimensional scanning transmission electron microscopy (4D-STEM) to directly image the local atomic electric field surrounding Ni atoms near the surface and discover distinct valence variations of Ni atoms, which are confirmed by atomic-resolution electron energy-loss spectroscopy (EELS). Our results suggest that the strong surface reconstruction in the reduced sample is closely related to the formation of oxygen vacancies from topochemical reduction. These findings provide insights into the understanding and evolution of surface polarity at the atomic level.

Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing

In this work, the ultrathin two-dimensional (2D) indium oxide (InO_x) with a large area of more than 100 μm² and a high degree of uniformity was automatically peeled off from indium by the liquid-metal printing technique. Raman and optical measurements revealed that 2D-InO_x has a polycrystalline cubic structure. By altering the printing temperature which affects the crystallinity of 2D-InO_x, the mechanism of the existence and disappearance of memristive characteristics was established. The tunable characteristics of the 2D-InO_x memristor with reproducible one-order switching was manifest from the electrical measurements. Further adjustable multistate characteristics of the 2D-InO_x memristor and its resistance switching mechanism were evaluated. A detailed examination of the memristive process demonstrated the Ca²⁺ mimic dynamic in 2D-InO_x memristors as well as the fundamental principles underlying biological and artificial synapses. These surveys allow us to comprehend a 2D-InO_x memristor using the liquid-metal printing technique and could be applied to future neuromorphic applications and in the field of revolutionary 2D material exploration.

Thickness-Dependent Interface Polarity in Infinite-Layer Nickelate Superlattices

The interface polarity plays a vital role in the physical properties of oxide heterointerfaces because it can cause specific modifications of the electronic and atomic structure. Reconstruction due to the strong polarity of the NdNiO₂/SrTiO₃ interface in recently discovered superconducting nickelate films may play an important role, as no superconductivity has been observed in the bulk. By employing four-dimensional scanning transmission electron microscopy and electron energy-loss spectroscopy, we studied effects of oxygen distribution, polyhedral distortion, elemental intermixing, and dimensionality in NdNiO₂/SrTiO₃ superlattices grown on SrTiO₃ (001) substrates. Oxygen distribution maps show a gradual variation of the oxygen content in the nickelate layer. Remarkably, we demonstrate thickness-dependent interface reconstruction due to a polar discontinuity. An average cation displacement of ∼0.025 nm at interfaces in 8NdNiO₂/4SrTiO₃ superlattices is twice larger than that in 4NdNiO₂/2SrTiO₃ superlattices. Our results provide insights into the understanding of reconstructions at NdNiO₂/SrTiO₃ polar interfaces.

Stacking and Twisting of Freestanding Complex Oxide Thin Films

The integration of dissimilar materials in heterostructures has long been a cornerstone of modern materials science-seminal examples are 2D materials and van der Waals heterostructures. Recently, new methods have been developed that enable the realization of ultrathin freestanding oxide films approaching the 2D limit. Oxides offer new degrees of freedom, due to the strong electronic interactions, especially the 3d orbital electrons, which give rise to rich exotic phases. Inspired by this progress, a new platform for assembling freestanding oxide thin films with different materials and orientations into artificial stacks with heterointerfaces is developed. It is shown that the oxide stacks can be tailored by controlling the stacking sequences, as well as the twist angle between the constituent layers with atomically sharp interfaces, leading to distinct moiré patterns in the transmission electron microscopy images of the full stacks. Stacking and twisting is recognized as a key degree of structural freedom in 2D materials but, until now, has never been realized for oxide materials. This approach opens unexplored avenues for fabricating artificial 3D oxide stacking heterostructures with freestanding membranes across a broad range of complex oxide crystal structures with functionalities not available in conventional 2D materials.