Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Self-Rolled-Up WSe2 One-Dimensional/Two-Dimensional Homojunctions: Enabling High-Performance Self-Powered Polarization-Sensitive Photodetectors

Mixed-dimensional heterostructures integrate materials of diverse dimensions with unique electronic functionalities, providing a new platform for research in electron transport and optoelectronic detection. Here, we report a novel covalently bonded one-dimensional/two-dimensional (1D/2D) homojunction structure with robust junction contacts, which exhibits wide-spectrum (from the visible to near-infrared regions), self-driven photodetection, and polarization-sensitive photodetection capabilities. Benefiting from the ultralow dark current at zero bias voltage, the on/off ratio and detectivity of the device reach 1.5 × 103 and 3.24 × 109 Jones, respectively. Furthermore, the pronounced anisotropy of the WSe2 1D/2D homojunction is attributed to its low symmetry, enabling polarization-sensitive detection. In the absence of any external bias voltage, the device exhibits strong linear dichroism for wavelengths of 638 and 808 nm, with anisotropy ratios of 2.06 and 1.96, respectively. These results indicate that such mixed-dimensional structures can serve as attractive building blocks for novel optoelectronic detectors.

Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.

Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides

The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.

Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides

With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.

Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors

Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Nanomaterial-Based Synaptic Optoelectronic Devices for In-Sensor Preprocessing of Image Data

With the advance in information technologies involving machine vision applications, the demand for energy- and time-efficient acquisition, transfer, and processing of a large amount of image data has rapidly increased. However, current architectures of the machine vision system have inherent limitations in terms of power consumption and data latency owing to the physical isolation of image sensors and processors. Meanwhile, synaptic optoelectronic devices that exhibit photoresponse similar to the behaviors of the human synapse enable in-sensor preprocessing, which makes the front-end part of the image recognition process more efficient. Herein, we review recent progress in the development of synaptic optoelectronic devices using functional nanomaterials and their unique interfacial characteristics. First, we provide an overview of representative functional nanomaterials and device configurations for the synaptic optoelectronic devices. Then, we discuss the underlying physics of each nanomaterial in the synaptic optoelectronic device and explain related device characteristics that allow for the in-sensor preprocessing. We also discuss advantages achieved by the application of the synaptic optoelectronic devices to image preprocessing, such as contrast enhancement and image filtering. Finally, we conclude this review and present a short prospect.

Large-Scale Ultra-Robust MoS2 Patterns Directly Synthesized on Polymer Substrate for Flexible Sensing Electronics

Synthesis of large-area patterned MoS₂ is considered the principle base for realizing high-performance MoS₂ -based flexible electronic devices. Patterning and transferring MoS₂ films to target flexible substrates, however, require conventional multi-step photolithography patterning and transferring process, despite tremendous progress in the facilitation of practical applications. Herein, an approach to directly synthesize large-scale MoS₂ patterns that combines inkjet printing and thermal annealing is reported. An optimal precursor ink is prepared that can deposit arbitrary patterns on polyimide films. By introducing a gas atmosphere of argon/hydrogen (Ar/H₂ ), thermal treatment at 350 °C enables an in situ decomposition and crystallization in the patterned precursors and, consequently, results in the formation of MoS₂ . Without complicated processes, patterned MoS₂ is obtained directly on polymer substrate, exhibiting superior mechanical flexibility and durability (≈2% variation in resistance over 10,000 bending cycles), as well as excellent chemical stability, which is attributed to the generated continuous and thin microstructures, as well as their strong adhesion with the substrate. As a step further, this approach is employed to manufacture various flexible sensing devices that are insensitive to body motions and moisture, including temperature sensors and biopotential sensing systems for real-time, continuously monitoring skin temperature, electrocardiography, and electromyography signals.

Two-Dimensional Transition Metal Dichalcogenide Based Biosensors: From Fundamentals to Healthcare Applications

There has been an exponential surge in reports on two-dimensional (2D) materials ever since the discovery of graphene in 2004. Transition metal dichalcogenides (TMDs) are a class of 2D materials where weak van der Waals force binds individual covalently bonded X-M-X layers (where M is the transition metal and X is the chalcogen), making layer-controlled synthesis possible. These individual building blocks (single-layer TMDs) transition from indirect to direct band gaps and have fascinating optical and electronic properties. Layer-dependent opto-electrical properties, along with the existence of finite band gaps, make single-layer TMDs superior to the well-known graphene that paves the way for their applications in many areas. Ultra-fast response, high on/off ratio, planar structure, low operational voltage, wafer scale synthesis capabilities, high surface-to-volume ratio, and compatibility with standard fabrication processes makes TMDs ideal candidates to replace conventional semiconductors, such as silicon, etc., in the new-age electrical, electronic, and opto-electronic devices. Besides, TMDs can be potentially utilized in single molecular sensing for early detection of different biomarkers, gas sensors, photodetector, and catalytic applications. The impact of COVID-19 has given rise to an upsurge in demand for biosensors with real-time detection capabilities. TMDs as active or supporting biosensing elements exhibit potential for real-time detection of single biomarkers and, hence, show promise in the development of point-of-care healthcare devices. In this review, we provide a historical survey of 2D TMD-based biosensors for the detection of bio analytes ranging from bacteria, viruses, and whole cells to molecular biomarkers via optical, electronic, and electrochemical sensing mechanisms. Current approaches and the latest developments in the study of healthcare devices using 2D TMDs are discussed. Additionally, this review presents an overview of the challenges in the area and discusses the future perspective of 2D TMDs in the field of biosensing for healthcare devices.

Design Guidelines for Two-Dimensional Transition Metal Dichalcogenide Alloys

Two-dimensional (2D) materials and transition metal dichalcogenides (TMD) in particular are at the forefront of nanotechnology. To tailor their properties for engineering applications, alloying strategies-used successfully for bulk metals in the last century-need to be extended to this novel class of materials. Here we present a systematic analysis of the phase behavior of substitutional 2D alloys in the TMD family on both the metal and the chalcogenide site. The phase behavior is quantified in terms of a metastability metric and benchmarked against systematic computational screening of configurational energy landscapes from First-Principles. The resulting Pettifor maps can be used to identify broad trends across chemical spaces and as starting point for setting up rational search strategies in phase space, thus allowing for targeted computational analysis of properties on likely thermodynamically stable compounds. The results presented here also constitute a useful guideline for synthesis of binary metal 2D TMDs alloys via a range of synthesis techniques.

Observation of H2 Evolution and Electrolyte Diffusion on MoS2 Monolayer by In Situ Liquid-Phase Transmission Electron Microscopy

Unit-cell-thick MoS₂ is a promising electrocatalyst for the hydrogen evolution reaction (HER) owing to its tunable catalytic activity, which is determined based on the energetics and molecular interactions of different types of HER active sites. Kinetic responses of MoS₂ active sites, including the reaction onset, diffusion of the electrolyte and H₂ bubbles, and continuation of these processes, are important factors affecting the catalytic activity of MoS₂ . Investigating these factors requires a direct real-time analysis of the HER occurring on spatially independent active sites. Herein, the H₂ evolution and electrolyte diffusion on the surface of MoS₂ are observed in real time by in situ electrochemical liquid-phase transmission electron microscopy (LPTEM). Time-dependent LPTEM observations reveal that different types of active sites are sequentially activated under the same conditions. Furthermore, the electrolyte flow to these sites is influenced by the reduction potential and site geometry, which affects the bubble detachment and overall HER activity of MoS₂ .

Recent Progress in Research on Ferromagnetic Rhenium Disulfide

Since long-range magnetic ordering was observed in pristine Cr₂Ge₂Te₆ and monolayer CrCl₃, two-dimensional (2D) magnetic materials have gradually become an emerging field of interest. However, it is challenging to induce and modulate magnetism in non-magnetic (NM) materials such as rhenium disulfide (ReS₂). Theoretical research shows that defects, doping, strain, particular phase, and domain engineering may facilitate the creation of magnetic ordering in the ReS₂ system. These predictions have, to a large extent, stimulated experimental efforts in the field. Herein, we summarize the recent progress on ferromagnetism (FM) in ReS₂. We compare the proposed methods to introduce and modulate magnetism in ReS₂, some of which have made great experimental breakthroughs. Experimentally, only a few ReS₂ materials exhibit room-temperature long-range ferromagnetic order. In addition, the superexchange interaction may cause weak ferromagnetic coupling between neighboring trimers. We also present a few potential research directions for the future, and we finally conclude that a deep and thorough understanding of the origin of FM with and without strain is very important for the development of basic research and practical applications.

Performance improvement in monolayered SnS2 double-gate field-effect transistors via point defect engineering

Owing to the relatively high carrier mobility and on/off current ratio, monolayered SnS₂ has the advantage of suppressing drain-to-source tunneling for short channels, rendering it a promising candidate in field-effect transistor (FET) applications. To extend the scaling limit of the channel length, we propose to rationally modulate the electronic properties of monolayered SnS₂ through the customized design of point defects and simulate its performance limit in sub-5 nm double-gate FETs (DGFETs), using density functional theory combined with nonequilibrium Green's function formalism. Among all types of point defects, the Se atom as a substitutional dopant (Se_S) can nondegenerately inject electrons into each monolayered (ML) SnS₂ 2 × 4 × 1 supercell, whereas the Sn vacancy (V_Sn) defect exhibits an opposite doping effect. By adjusting the lateral Schottky barrier height between electrodes and the channel region, the on-state current (I_on), on/off ratio, delay time, and power-delay product in the formed n-type Se_S-doped SnS₂ and p-type V_Sn-doped SnS₂ DGFETs with a channel length of 4.5 nm have been remarkably improved, fulfilling the requirements of the International Technology Roadmap for Semiconductors (ITRS) for high-performance applications in the 2028 horizon. Our work unveils the great significance of point defect engineering for applications in ultimately scaled electronics.