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Sun H, Tian H, Hu Y, Cui Y, Chen X, Xu M, Wang X, Zhou T. Bio-Plausible Multimodal Learning with Emerging Neuromorphic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2406242. [PMID: 39258724 DOI: 10.1002/advs.202406242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2024] [Revised: 08/02/2024] [Indexed: 09/12/2024]
Abstract
Multimodal machine learning, as a prospective advancement in artificial intelligence, endeavors to emulate the brain's multimodal learning abilities with the objective to enhance interactions with humans. However, this approach requires simultaneous processing of diverse types of data, leading to increased model complexity, longer training times, and higher energy consumption. Multimodal neuromorphic devices have the capability to preprocess spatio-temporal information from various physical signals into unified electrical signals with high information density, thereby enabling more biologically plausible multimodal learning with low complexity and high energy-efficiency. Here, this work conducts a comparison between the expression of multimodal machine learning and multimodal neuromorphic computing, followed by an overview of the key characteristics associated with multimodal neuromorphic devices. The bio-plausible operational principles and the multimodal learning abilities of emerging devices are examined, which are classified into heterogeneous and homogeneous multimodal neuromorphic devices. Subsequently, this work provides a detailed description of the multimodal learning capabilities demonstrated by neuromorphic circuits and their respective applications. Finally, this work highlights the limitations and challenges of multimodal neuromorphic computing in order to hopefully provide insight into potential future research directions.
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Affiliation(s)
- Haonan Sun
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Haoxiang Tian
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yihao Hu
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yi Cui
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xinrui Chen
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Tao Zhou
- School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
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Hu L, Li Z, Shao J, Cheng P, Wang J, Vasilakos AV, Zhang L, Chai Y, Ye Z, Zhuge F. Electronically Reconfigurable Memristive Neuron Capable of Operating in Both Excitation and Inhibition Modes. NANO LETTERS 2024; 24:10865-10873. [PMID: 39142648 PMCID: PMC11378334 DOI: 10.1021/acs.nanolett.4c02470] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
Threshold switching (TS) memristors are promising candidates for artificial neurons in neuromorphic systems. However, they often lack biological plausibility, typically functioning solely in an excitation mode. The absence of an inhibitory mode limits neurons' ability to synergistically process both excitatory and inhibitory synaptic signals. To address this limitation, we propose a novel memristive neuron capable of operating in both excitation and inhibition modes. The memristor's threshold voltage can be reversibly tuned using voltages of different polarities because of its bipolar TS behavior, enabling the device to function as an electronically reconfigurable bi-mode neuron. A variety of neuronal activities such as all-or-nothing behavior and tunable firing probability are mimicked under both excitatory and inhibitory stimuli. Furthermore, we develop a self-adaptive neuromorphic vision sensor based on bi-mode neurons, demonstrating effective object recognition in varied lighting conditions. Thus, our bi-mode neuron offers a versatile platform for constructing neuromorphic systems with rich functionality.
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Affiliation(s)
- Lingxiang Hu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Zongxiao Li
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jiale Shao
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Peihong Cheng
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315211, China
| | - Jingrui Wang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315211, China
| | | | - Li Zhang
- Healthcare Engineering Centre, School of Engineering, Temasek Polytechnic, Tampines Avenue, 529757, Singapore
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Zhizhen Ye
- Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Fei Zhuge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai 200072, China
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3
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Li D, Chen Y, Ren H, Tang Y, Zhang S, Wang Y, Xing L, Huang Q, Meng L, Zhu B. An Active-Matrix Synaptic Phototransistor Array for In-Sensor Spectral Processing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2406401. [PMID: 39166499 DOI: 10.1002/advs.202406401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Revised: 07/12/2024] [Indexed: 08/23/2024]
Abstract
The human retina perceives and preprocesses the spectral information of incident light, enabling fast image recognition and efficient chromatic adaptation. In comparison, it is reluctant to implement parallel spectral preprocessing and temporal information fusion in current complementary metal-oxide-semiconductor (CMOS) image sensors, requiring intricate circuitry, frequent data transmission, and color filters. Herein, an active-matrix synaptic phototransistor array (AMSPA) is developed based on organic/inorganic semiconductor heterostructures. The AMSPA provides wavelength-dependent, bidirectional photoresponses, enabling dynamic imaging and in-sensor spectral preprocessing functions. Specifically, near-infrared light induces inhibitory photoresponse while UV light results in exhibitory photoresponse. With rational structural design of the organic/inorganic hybrid heterostructures, the current dynamic range of phototransistor is improved to over 90 dB. Finally, a 32 × 64 AMSPA (128 pixels per inch) is demonstrated with one-switch-transistor and one-synaptic phototransistor (1-T-1-PT) structure, achieving spatial chromatic enhancement and temporal trajectory imaging. These results reveal the feasibility of AMSPA for constructing artificial vision systems.
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Affiliation(s)
- Dingwei Li
- Westlake Institute for Optoelectronics, Hangzhou, 311421, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yitong Chen
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Huihui Ren
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yingjie Tang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Siyu Zhang
- Westlake Institute for Optoelectronics, Hangzhou, 311421, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Yan Wang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Lixiang Xing
- Westlake Institute for Optoelectronics, Hangzhou, 311421, China
| | - Qi Huang
- Westlake Institute for Optoelectronics, Hangzhou, 311421, China
| | - Lei Meng
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Bowen Zhu
- Westlake Institute for Optoelectronics, Hangzhou, 311421, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
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Wang Y, Nie S, Liu S, Hu Y, Fu J, Ming J, Liu J, Li Y, He X, Wang L, Li W, Yi M, Ling H, Xie L, Huang W. Dual-Adaptive Heterojunction Synaptic Transistors for Efficient Machine Vision in Harsh Lighting Conditions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404160. [PMID: 38815276 DOI: 10.1002/adma.202404160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Revised: 05/22/2024] [Indexed: 06/01/2024]
Abstract
Photoadaptive synaptic devices enable in-sensor processing of complex illumination scenes, while second-order adaptive synaptic plasticity improves learning efficiency by modifying the learning rate in a given environment. The integration of above adaptations in one phototransistor device will provide opportunities for developing high-efficient machine vision system. Here, a dually adaptable organic heterojunction transistor as a working unit in the system, which facilitates precise contrast enhancement and improves convergence rate under harsh lighting conditions, is reported. The photoadaptive threshold sliding originates from the bidirectional photoconductivity caused by the light intensity-dependent photogating effect. Metaplasticity is successfully implemented owing to the combination of ambipolar behavior and charge trapping effect. By utilizing the transistor array in a machine vision system, the details and edges can be highlighted in the 0.4% low-contrast images, and a high recognition accuracy of 93.8% with a significantly promoted convergence rate by about 5 times are also achieved. These results open a strategy to fully implement metaplasticity in optoelectronic devices and suggest their vision processing applications in complex lighting scenes.
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Affiliation(s)
- Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shimiao Nie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shanshuo Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yunfei Hu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jianyu Ming
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jing Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yueqing Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, China
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Li P, Song H, Sa Z, Liu F, Wang M, Wang G, Wan J, Zang Z, Jiang J, Yang ZX. Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems. MATERIALS HORIZONS 2024. [PMID: 39072692 DOI: 10.1039/d4mh00396a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/30/2024]
Abstract
Due to their persistent photoconductivity, amorphous metal oxide thin films are promising for construction of artificial visual systems. In this work, large-scale, uniformly distributed amorphous InGaO thin films with an adjustable In/Ga ratio and thickness are prepared successfully by a low-cost environmentally friendly and easy-to-handle solution process for constructing artificial visual systems. With the increase of the In/Ga ratio and film thickness, the number of oxygen vacancies increases, along with the increase of post-synaptic current triggered by illumination, benefiting the transition of short-term plasticity to long-term plasticity. With an optimal In/Ga ratio and film thickness, the conductance response difference at a decay of 0 s between the 1st and the 10th views of a 5 × 5 array InGaO thin film transistor is up to 2.88 μA, along with an increase in the Idecay 30s/Idecay 0s ratio from 45.24% to 53.24%, resulting in a high image clarity and non-volatile artificial visual memory. Furthermore, a three-layer artificial vision network is constructed to evaluate the image recognition capability, exhibiting an accuracy of up to 91.32%. All results promise low-cost and easy-to-handle amorphous InGaO thin films for future visual information processing and image recognition.
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Affiliation(s)
- Pengsheng Li
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Honglin Song
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410082, China.
| | - Zixu Sa
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Fengjing Liu
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Mingxu Wang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Guangcan Wang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Junchen Wan
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Zeqi Zang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410082, China.
| | - Zai-Xing Yang
- School of Physics, Shandong University, Jinan 2510100, China.
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Wang L, Wang H, Liu J, Wang Y, Shao H, Li W, Yi M, Ling H, Xie L, Huang W. Negative Photoconductivity Transistors for Visuomorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403538. [PMID: 39040000 DOI: 10.1002/adma.202403538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2024] [Revised: 06/26/2024] [Indexed: 07/24/2024]
Abstract
Visuomorphic computing aims to simulate and potentially surpass the human retina by mimicking biological visual perception with an artificial retina. Despite significant progress, challenges persist in perceiving complex interactive environments. Negative photoconductivity transistors (NPTs) mimic synaptic behavior by achieving adjustable positive photoconductivity (PPC) and negative photoconductivity (NPC), simulating "excitation" and "inhibition" akin to sensory cell signals. In complex interactive environments, NPTs are desired for visuomorphic computing that can achieve a better sense of information, lower power consumption, and reduce hardware complexity. In this review, it is started by introducing the development process of NPTs, while placing a strong emphasis on the device structures, working mechanisms, and key performance parameters. The common material systems employed in NPTs based on their functions are then summarized. Moreover, it is proceeded to summarize the noteworthy applications of NPTs in optoelectronic devices, including advanced multibit nonvolatile memory, optoelectronic logic gates, optical encryption, and visual perception. Finally, the challenges and prospects that lie ahead in the ongoing development of NPTs are addressed, offering valuable insights into their applications in optoelectronics and a comprehensive understanding of their significance.
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Affiliation(s)
- Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Haotian Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Jing Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - He Shao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KloFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, China
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Wang Z, Li M, Yang H, Shao S, Li J, Deng M, Kang K, Fang Y, Wang H, Zhao J. Enhancement-Mode Carbon Nanotube Optoelectronic Synaptic Transistors with Large and Controllable Threshold Voltage Modulation Window for Broadband Flexible Vision Systems. ACS NANO 2024; 18:14298-14311. [PMID: 38787538 DOI: 10.1021/acsnano.4c00166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
The development of large-scale integration of optoelectronic neuromorphic devices with ultralow power consumption and broadband responses is essential for high-performance bionics vision systems. In this work, we developed a strategy to construct large-scale (40 × 30) enhancement-mode carbon nanotube optoelectronic synaptic transistors with ultralow power consumption (33.9 aJ per pulse) and broadband responses (from 365 to 620 nm) using low-work function yttrium (Y)-gate electrodes and the mixture of eco-friendly photosensitive Ag2S quantum dots (QDs) and ionic liquids (ILs)-cross-linking-poly(4-vinylphenol) (PVP) (ILs-c-PVP) as the dielectric layers. Solution-processable carbon nanotube thin-film transistors (TFTs) showed enhancement-mode characteristics with the wide and controllable threshold voltage window (-1 V∼0 V) owing to use of the low-work-function Y-gate electrodes. It is noted that carbon nanotube optoelectronic synaptic transistors exhibited high on/off ratios (>106), small hysteresis and low operating voltage (≤2 V), and enhancement mode even under the illumination of ultraviolet (UV, 365 nm), blue (450 nm), and green (550 nm) to red (620 nm) pulse lights when introducing eco-friendly Ag2S QDs in dielectric layers, demonstrating that they have the strong fault-tolerant ability for the threshold voltage drifts caused by various manufacturing scenarios. Furthermore, some important bionic functions including a high paired pulse facilitation index (PPF index, up to 290%), learning and memory function with the long duration (200 s), and rapid recovery (2 s). Pavlov's dog experiment (retention time up to 20 min) and visual memory forgetting experiments (the duration of high current for 180 s) are also demonstrated. Significantly, the optoelectronic synaptic transistors can be used to simulate the adaptive process of vision in varying light conditions, and we demonstrated the dynamic transition of light adaptation to dark adaptation based on light-induced conditional behavior. This work undoubtedly provides valuable insights for the future development of artificial vision systems.
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Affiliation(s)
- Zebin Wang
- Institute of Nano Science and Technology, University of Science and Technology of China, No. 166 Ren Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Min Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Hongchao Yang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Shuangshuang Shao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Jiaqi Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Meng Deng
- Institute of Nano Science and Technology, University of Science and Technology of China, No. 166 Ren Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Kaixiang Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Yuxiao Fang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
| | - Hua Wang
- Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, NO.79, Yingze West Main Street, Taiyuan, Shanxi Province 030024, P.R. China
| | - Jianwen Zhao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China
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8
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Luo X, Deng W, Sheng F, Ren X, Zhao Z, Zhao C, Liu Y, Shi J, Liu Z, Zhang X, Jie J. Bionic Scotopic Adaptation Transistors for Nighttime Low Illumination Imaging. ACS NANO 2024; 18:13726-13737. [PMID: 38742941 DOI: 10.1021/acsnano.4c01663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Human vision excels in perceiving nighttime low illumination due to biological feedforward adaptation. Replicating this ability in biomimetic vision using solid-state devices has been highly sought after. However, emulating scotopic adaptation, entailing a confluence of efficient photoexcitation and dynamic carrier modulation, presents formidable challenges. Here, we demonstrate a low-power and bionic scotopic adaptation transistor by coupling a light-absorption layer and an electron-trapping layer at the bottom of the semiconducting channel, enabling simultaneous achievement of efficient generation of free photocarriers and adaptive carrier accumulation within a single device. This innovation empowers our transistor to exhibit sensitivity-potentiated characteristics after adaptation, detecting scotopic-level illumination (0.001 lx) with exceptional photosensitivity up to 103 at low voltages below 2 V. Moreover, we have successfully replicated diverse scotopic vision functions, encompassing time-dependent visual threshold enhancement, light intensity-dependent adaptation index, imaging contrast enhancement for nighttime low illumination imaging, opening an opportunity for artificial night vision.
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Affiliation(s)
- Xiangkai Luo
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Wei Deng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Fangming Sheng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Xiaobin Ren
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Zishen Zhao
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, Jiangsu 215123, China
| | - Chun Zhao
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, Jiangsu 215123, China
| | - Yang Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Jialin Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Zeke Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
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9
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Liu X, Dai S, Zhao W, Zhang J, Guo Z, Wu Y, Xu Y, Sun T, Li L, Guo P, Yang J, Hu H, Zhou J, Zhou P, Huang J. All-Photolithography Fabrication of Ion-Gated Flexible Organic Transistor Array for Multimode Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312473. [PMID: 38385598 DOI: 10.1002/adma.202312473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 02/17/2024] [Indexed: 02/23/2024]
Abstract
Organic ion-gated transistors (OIGTs) demonstrate commendable performance for versatile neuromorphic systems. However, due to the fragility of organic materials to organic solvents, efficient and reliable all-photolithography methods for scalable manufacturing of high-density OIGT arrays with multimode neuromorphic functions are still missing, especially when all active layers are patterned in high-density. Here, a flexible high-density (9662 devices per cm2) OIGT array with high yield and minimal device-to-device variation is fabricated by a modified all-photolithography method. The unencapsulated flexible array can withstand 1000 times' bending at a radius of 1 mm, and 3 months' storage test in air, without obvious performance degradation. More interesting, the OIGTs can be configured between volatile and nonvolatile modes, suitable for constructing reservoir computing systems to achieve high accuracy in classifying handwritten digits with low training costs. This work proposes a promising design of organic and flexible electronics for affordable neuromorphic systems, encompassing both array and algorithm aspects.
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Affiliation(s)
- Xu Liu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Shilei Dai
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Weidong Zhao
- School of Electronic and Information Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Ziyi Guo
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yue Wu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Pu Guo
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Jie Yang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Huawei Hu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, P. R. China
| | - Junhe Zhou
- School of Electronic and Information Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- National Key Laboratory of Autonomous Intelligent Unmanned Systems, Tongji University, Shanghai, 201804, P. R. China
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10
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Wen W, Liu G, Wei X, Huang H, Wang C, Zhu D, Sun J, Yan H, Huang X, Shi W, Dai X, Dong J, Jiang L, Guo Y, Wang H, Liu Y. Biomimetic nanocluster photoreceptors for adaptative circular polarization vision. Nat Commun 2024; 15:2397. [PMID: 38493210 PMCID: PMC10944536 DOI: 10.1038/s41467-024-46646-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Accepted: 03/06/2024] [Indexed: 03/18/2024] Open
Abstract
Nanoclusters with atomically precise structures and discrete energy levels are considered as nanoscale semiconductors for artificial intelligence. However, nanocluster electronic engineering and optoelectronic behavior have remained obscure and unexplored. Hence, we create nanocluster photoreceptors inspired by mantis shrimp visual systems to satisfy the needs of compact but multi-task vision hardware and explore the photo-induced electronic transport. Wafer-scale arrayed photoreceptors are constructed by a nanocluster-conjugated molecule heterostructure. Nanoclusters perform as an in-sensor charge reservoir to tune the conductance levels of artificial photoreceptors by a light valve mechanism. A ligand-assisted charge transfer process takes place at nanocluster interface and it features an integration of spectral-dependent visual adaptation and circular polarization recognition. This approach is further employed for developing concisely structured, multi-task, and compact artificial visual systems and provides valuable guidelines for nanocluster neuromorphic devices.
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Affiliation(s)
- Wei Wen
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guocai Liu
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaofang Wei
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haojie Huang
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chong Wang
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, CAS Research/Education Center for Excellence in Molecular Sciences, Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Danlei Zhu
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianzhe Sun
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Huijuan Yan
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, CAS Research/Education Center for Excellence in Molecular Sciences, Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xin Huang
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wenkang Shi
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaojuan Dai
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hanlin Wang
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
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11
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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12
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Zhu J, Hu S, Chen B, Wei S, Zhang Y, Wu X, Zou X, Lu X, Sun Q, Zhang DW, Ji L. Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation. J Chem Phys 2024; 160:044706. [PMID: 38270240 DOI: 10.1063/5.0188101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/19/2023] [Accepted: 01/05/2024] [Indexed: 01/26/2024] Open
Abstract
Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V-1 s-1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications.
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Affiliation(s)
- Jiyuan Zhu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shen Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Jiashan Fudan Institute, Jiashan 314100, China
| | - Bojia Chen
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shice Wei
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xuefeng Wu
- Shanghai Integrated Circuit Manufacturing Innovation Center Co., Ltd., Shanghai 201203, China
| | - Xingli Zou
- State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrometallurgy, and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrometallurgy, and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Qingqing Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David W Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Li Ji
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Jiashan Fudan Institute, Jiashan 314100, China
- Hubei Yangtz Memory Laboratories, Wuhan 430205, China
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13
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Xu K, Peng B, Mao H, Wang Z, Gong H, Fu C, Ren FF, Yang Y, Wan C, Wan Q, Ye J. Ga 2O 3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention. J Phys Chem Lett 2024; 15:556-564. [PMID: 38198134 DOI: 10.1021/acs.jpclett.3c02898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
The human brain efficiently processes only a fraction of visual information, a phenomenon termed attentional control, resulting in energy savings and heightened adaptability. Translating this mechanism into artificial visual neurons holds promise for constructing energy-efficient, bioinspired visual systems. Here, we propose a self-rectifying artificial visual neuron (SEVN) based on a NiO/Ga2O3 bipolar heterojunction with attentional control on patterns with a target color. The device exhibits short-term potentiation (STP) with quantum point contact (QPC) traits at low bias and transitions to long-term potentiation (LTP) at high bias, particularly facilitated by electron capture in deep defects upon ultraviolet (UV) exposure. With the utilization of two wavelengths of light upon the target and interference part of CAPTCHA to simulate top-down attentional control, the recognition accuracy is enhanced from 74 to 84%. These findings have the potential to augment the visual capability of neuromorphic systems with implications for diverse applications, including cybersecurity, healthcare, and machine vision.
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Affiliation(s)
- Ke Xu
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Baocheng Peng
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Huiwu Mao
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Zhengpeng Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Hehe Gong
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Chuanyu Fu
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Fang-Fang Ren
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Yi Yang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Changjin Wan
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Qing Wan
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
- Yongjiang Laboratory (Y-LAB), Ningbo, Zhejiang 315202, People's Republic of China
| | - Jiandong Ye
- School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
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14
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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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15
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Diao Y, Zhang Y, Li Y, Jiang J. Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications. SENSORS (BASEL, SWITZERLAND) 2023; 23:9779. [PMID: 38139625 PMCID: PMC10747618 DOI: 10.3390/s23249779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2023] [Revised: 11/30/2023] [Accepted: 12/05/2023] [Indexed: 12/24/2023]
Abstract
As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace, computer architecture is transitioning from compute-intensive to memory-intensive. However, traditional von Neumann architectures encounter bottlenecks in addressing modern computational challenges. The emulation of the behaviors of a synapse at the device level by ionic/electronic devices has shown promising potential in future neural-inspired and compact artificial intelligence systems. To address these issues, this review thoroughly investigates the recent progress in metal-oxide heterostructures for neuromorphic applications. These heterostructures not only offer low power consumption and high stability but also possess optimized electrical characteristics via interface engineering. The paper first outlines various synthesis methods for metal oxides and then summarizes the neuromorphic devices using these materials and their heterostructures. More importantly, we review the emerging multifunctional applications, including neuromorphic vision, touch, and pain systems. Finally, we summarize the future prospects of neuromorphic devices with metal-oxide heterostructures and list the current challenges while offering potential solutions. This review provides insights into the design and construction of metal-oxide devices and their applications for neuromorphic systems.
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Affiliation(s)
| | | | | | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
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16
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Zhu J, Hu S, Chen B, Zhang Y, Wei S, Guo X, Zou X, Lu X, Sun Q, Zhang DW, Ji L. Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films. J Chem Phys 2023; 159:174704. [PMID: 37916595 DOI: 10.1063/5.0170886] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2023] [Accepted: 10/16/2023] [Indexed: 11/03/2023] Open
Abstract
The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction of novel functionality in the BEOL while providing additional die area in the FEOL. Oxide semiconductor-based transistors serve as attractive candidates for BEOL. Within these categories, In2O3 material is particularly notable; nonetheless, the excessive intrinsic carrier concentration poses a limitation on its broader applicability. Herein, the deposition of Hf-doped In2O3 (IHO) films via atomic layer deposition for the first time demonstrates an effective method for tuning the intrinsic carrier concentration, where the doping concentration plays a critical role in determine the properties of IHO films and all-oxide structure transistors with Au-free process. The all-oxide transistors with In2O3: HfO2 ratio of 10:1 exhibited optimal electrical properties, including high on-current with 249 µA, field-effect mobility of 13.4 cm2 V-1 s-1, and on/off ratio exceeding 106, and also achieved excellent stability under long time positive bias stress and negative bias stress. These findings suggest that this study not only introduces a straightforward and efficient approach to improve the properties of In2O3 material and transistors, but as well paves the way for development of all-oxide transistors and their integration into BEOL technology.
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Affiliation(s)
- Jiyuan Zhu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shen Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Bojia Chen
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shice Wei
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xiangyu Guo
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xingli Zou
- State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Qingqing Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David W Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Li Ji
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Hubei Yangtz Memory Laboratories, Wuhan 430205, China
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17
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Dai S, Liu X, Liu Y, Xu Y, Zhang J, Wu Y, Cheng P, Xiong L, Huang J. Emerging Iontronic Neural Devices for Neuromorphic Sensory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300329. [PMID: 36891745 DOI: 10.1002/adma.202300329] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Revised: 02/22/2023] [Indexed: 06/18/2023]
Abstract
Living organisms have a very mysterious and powerful sensory computing system based on ion activity. Interestingly, studies on iontronic devices in the past few years have proposed a promising platform for simulating the sensing and computing functions of living organisms, because: 1) iontronic devices can generate, store, and transmit a variety of signals by adjusting the concentration and spatiotemporal distribution of ions, which analogs to how the brain performs intelligent functions by alternating ion flux and polarization; 2) through ionic-electronic coupling, iontronic devices can bridge the biosystem with electronics and offer profound implications for soft electronics; 3) with the diversity of ions, iontronic devices can be designed to recognize specific ions or molecules by customizing the charge selectivity, and the ionic conductivity and capacitance can be adjusted to respond to external stimuli for a variety of sensing schemes, which can be more difficult for electron-based devices. This review provides a comprehensive overview of emerging neuromorphic sensory computing by iontronic devices, highlighting representative concepts of both low-level and high-level sensory computing and introducing important material and device breakthroughs. Moreover, iontronic devices as a means of neuromorphic sensing and computing are discussed regarding the pending challenges and future directions.
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Affiliation(s)
- Shilei Dai
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital, Tongji University, Shanghai, 200434, P. R. China
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam, Hong Kong, 999077, China
| | - Xu Liu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Youdi Liu
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, State College, PA, 16802, USA
| | - Yutong Xu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yue Wu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Ping Cheng
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Lize Xiong
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital, Tongji University, Shanghai, 200434, P. R. China
| | - Jia Huang
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital, Tongji University, Shanghai, 200434, P. R. China
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
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18
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Dai Q, Pei M, Guo J, Wang Q, Hao Z, Wang H, Li Y, Li L, Lu K, Yan Y, Shi Y, Li Y. Integration of image preprocessing and recognition functions in an optoelectronic coupling organic ferroelectric retinomorphic neuristor. MATERIALS HORIZONS 2023; 10:3061-3071. [PMID: 37218409 DOI: 10.1039/d3mh00429e] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The human visual system (HVS) has the advantages of a low power consumption and high efficiency because of the synchronous perception and early preprocessing of external image information in the retina, as well as parallel in-memory computing within the visual cortex. Realizing the biofunction simulation of the retina and visual cortex in a single device structure provides opportunities for performance improvements and machine vision system (MVS) integration. Here, we fabricate organic ferroelectric retinomorphic neuristors that integrate the retina-like preprocessing function and recognition of the visual cortex in a single device architecture. Benefiting from the electrical/optical coupling modulation of ferroelectric polarization, our devices show a bidirectional photoresponse that acts as the basis for mimicking retinal preconditioning and multi-level memory capabilities for recognition. The MVS based on the proposed retinomorphic neuristors achieves a high recognition accuracy of ∼90%, which is 20% higher than that of the incomplete system without the preprocessing function. In addition, we successfully demonstrate image encryption and optical programming logic gate functions. Our work suggests that the proposed retinomorphic neuristors offer great potential for MVS monolithic integration and functional expansion.
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Affiliation(s)
- Qinyong Dai
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Mengjiao Pei
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Jianhang Guo
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Qijing Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Ziqian Hao
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Hengyuan Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yating Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Longfei Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Kuakua Lu
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yang Yan
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
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19
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Zhang Y, Huang Z, Jiang J. Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2186689. [PMID: 37007672 PMCID: PMC10054230 DOI: 10.1080/14686996.2023.2186689] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/16/2023] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.
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Affiliation(s)
- Yi Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
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20
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Xue Z, Xu Y, Jin C, Liang Y, Cai Z, Sun J. Halide perovskite photoelectric artificial synapses: materials, devices, and applications. NANOSCALE 2023; 15:4653-4668. [PMID: 36805124 DOI: 10.1039/d2nr06403k] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.
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Affiliation(s)
- Zhengyang Xue
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yihuan Liang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Zihao Cai
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
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21
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Zeng YH, Chu FJ, Shih LC, Chen YC, Chen JS. Dual Light Temporal Coding Modes Enabled by Nanoparticle-Mediated Phototransistors via Gate Bias Modulation for Brain-Inspired Visual Perception. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9563-9573. [PMID: 36752393 DOI: 10.1021/acsami.2c18699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The core integration and cooperation of the retina, neurons, and synapses in the visual systems enable humans to effectively sense and process visual information with low power consumption. To mimic the human visual system, an artificial sensory nerve, along with optical sensing─a paired-pulse ratio (PPR) of the light pulse stimulated currents─and neural coding has been developed. For performing the artificial visual perception functions, we consistently reveal the positive and negative correlations between the PPR index and light pulse time interval by applying two consecutive light stimuli with gate voltages of -10 and 5 V, respectively, to a phototransistor. This phototransistor contains a heterostructured channel layer composed of zinc-oxide nanoparticles (ZnO NPs) interconnected with a solution-processed zinc-tin oxide (ZTO) film. The oxygen adsorption and desorption on the ZnO NP surface under light illumination are responsible for the positive-sloped PPR; the electron trapping effect at the ZnO NP/SiO2 interface is attributed to the negative-sloped PPR. The various accountable light power densities and number of surface trap states are considered to be directly realizing these spike-timing interval-dependent characteristics. The actual benefit of these characteristics is the dual temporal coding modes based on multiplicative operation using a ZTO/ZnO NP phototransistor realized via the active gate voltage modulation. The contrary tendency of the PPR index and temporal coding─a major biological neural coding─is well demonstrated by the potential of ZTO/ZnO NP phototransistors to be implemented in sensor networks for an artificial visual perception.
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Affiliation(s)
- Yun-Huei Zeng
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Fang-Jui Chu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Li-Chung Shih
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yu-Chieh Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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22
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Wang WS, Zhu LQ. Recent advances in neuromorphic transistors for artificial perception applications: FOCUS ISSUE REVIEW. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 24:10-41. [PMID: 36605031 PMCID: PMC9809405 DOI: 10.1080/14686996.2022.2152290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 11/09/2022] [Accepted: 11/22/2022] [Indexed: 06/17/2023]
Abstract
Conventional von Neumann architecture is insufficient in establishing artificial intelligence (AI) in terms of energy efficiency, computing in memory and dynamic learning. Delightedly, rapid developments in neuromorphic computing provide a new paradigm to solve this dilemma. Furthermore, neuromorphic devices that can realize synaptic plasticity and neuromorphic function have extraordinary significance for neuromorphic system. A three-terminal neuromorphic transistor is one of the typical representatives. In addition, human body has five senses, including vision, touch, auditory sense, olfactory sense and gustatory sense, providing abundant information for brain. Inspired by the human perception system, developments in artificial perception system will give new vitality to intelligent robots. This review discusses the operation mechanism, function and application of neuromorphic transistors. The latest progresses in artificial perception systems based on neuromorphic transistors are provided. Finally, the opportunities and challenges of artificial perception systems are summarized.
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Affiliation(s)
- Wei Sheng Wang
- School of Physical Science and Technology, Ningbo University, Ningbo, Zhejiang, People’s Republic of China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, People’s Republic of China
| | - Li Qiang Zhu
- School of Physical Science and Technology, Ningbo University, Ningbo, Zhejiang, People’s Republic of China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, People’s Republic of China
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23
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Zeng X, He P, Hu M, Zhao W, Chen H, Liu L, Sun J, Yang J. Copper inks for printed electronics: a review. NANOSCALE 2022; 14:16003-16032. [PMID: 36301077 DOI: 10.1039/d2nr03990g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Conductive inks have attracted tremendous attention owing to their adaptability and the convenient large-scale fabrication. As a new type of conductive ink, copper-based ink is considered to be one of the best candidate materials for the conductive layer in flexible printed electronics owing to its high conductivity and low price, and suitability for large-scale manufacturing processes. Recently, tremendous progress has been made in the preparation of cooper-based inks for electronic applications, but the antioxidation ability of copper-based nanomaterials within inks or films, that is, long-term reliability upon exposure to water and oxygen, still needs more exploration. In this review, we present a comprehensive overview of copper inks for printed electronics from ink preparation, printing methods and sintering, to antioxidation strategies and electronic applications. The review begins with an overview of the development of copper inks, followed by a demonstration of various preparation methods for copper inks. Then, the diverse printing techniques and post-annealing strategies used to fabricate conductive copper patterns are discussed. In addition, antioxidation strategies utilized to stabilize the mechanical and electrical properties of copper nanomaterials are summarized. Then the diverse applications of copper inks for electronic devices, such as transparent conductive electrodes, sensors, optoelectronic devices, and thin-film transistors, are discussed. Finally, the future development of copper-based inks and the challenges of their application in printed electronics are discussed.
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Affiliation(s)
- Xianghui Zeng
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Pei He
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Minglu Hu
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Weikai Zhao
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Huitong Chen
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Longhui Liu
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Jia Sun
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Junliang Yang
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
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24
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Li Q, Wang T, Fang Y, Hu X, Tang C, Wu X, Zhu H, Ji L, Sun QQ, Zhang DW, Chen L. Ultralow Power Wearable Organic Ferroelectric Device for Optoelectronic Neuromorphic Computing. NANO LETTERS 2022; 22:6435-6443. [PMID: 35737934 DOI: 10.1021/acs.nanolett.2c01768] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In order to imitate brain-inspired biological information processing systems, various neuromorphic computing devices have been proposed, most of which were prepared on rigid substrates and have energy consumption levels several orders of magnitude higher than those of biological synapses (∼10 fJ per spike). Herein, a new type of wearable organic ferroelectric artificial synapse is proposed, which has two modulation modes (optical and electrical modulation). Because of the high photosensitivity of organic semiconductors and the ultrafast polarization switching of ferroelectric materials, the synaptic device has an ultrafast operation speed of 30 ns and an ultralow power consumption of 0.0675 aJ per synaptic event. Under combined photoelectric modulation, the artificial synapse realizes associative learning. The proposed artificial synapse with ultralow power consumption demonstrates good synaptic plasticity under different bending strains. This provides new avenues for the construction of ultralow power artificial intelligence system and the development of future wearable devices.
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Affiliation(s)
- Qingxuan Li
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
| | - Tianyu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Yuqing Fang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
| | - Xuemeng Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
| | - Chengkang Tang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
| | - Xiaohan Wu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Hao Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Li Ji
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Qing-Qing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P.R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
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