High-Performance Organic Laser Semiconductor Enabling Efficient Light-Emitting Transistors and Low-Threshold Microcavity Lasers

Recent strategies for triplet-state emission regulation toward non-lead organic-inorganic metal halides

Organic-inorganic metal halides (OIMHs) have strengthened the development of triplet-state emission materials due to their excellent luminescence performance. Due to the inherent toxicity of lead (Pb) significantly limiting its further advancement, numerous studies have been conducted to regulate triplet-state emission of non-Pb OIMHs, and several feasible strategies have been proposed. However, most of the non-Pb OIMHs reported have a relatively short lifetime or a low luminescence efficiency, not in favor of their application. In this review, we provide a summary of recent reports on the regulation of triplet-state emissions in non-Pb OIMHs to provide benefits for the design of innovative luminescent materials. Our focus is primarily on exploring the internal and external factors that influence the triplet-state emission. Starting from the luminescence mechanism, the current strategies for regulating triplet-state emissions are summarized. Moreover, by manipulating these strategies, it becomes feasible to achieve triplet-state emissions that span a range of colors from blue to red, and even extend into the near-infrared spectrum with high luminescence efficiency, while also increasing their lifetimes. This review not only provides fresh insights into the advancement of triplet-state emissions in OIMHs but also integrates experimental and theoretical perspectives to illuminate the trajectory of future research endeavors.

High-quality integratable microlasers from scalable perovskite heterostructures enabled by solution-phase processing

High-performance transferable and integratable microlasers hold great promise to construct the integrated photonics and optoelectronics. However, the qualified candidates are still being pursued. Herein, a mass-production of low-threshold and wavelength-tunable microlasers that is readily integratable with the optical fiber platform is realized by a two-step solution-phase approach. The demonstration is enabled by the formation of a novel semiconductor heterostructure from halide perovskites featuring the quasi-free-standing and highly emissive properties. Corroborated by the in-situ optical characterization, we reveal that the lateral perovskite heterostructures are constructed through a sequential reaction driven by the surface energy contrast. These perovskite heterostructures exhibit low-threshold and broadband tunable lasing action thanks to the efficient spatial light conversion nature and the facile composition tunability. Taking the merits together, the heterostructure microlasers can be the competitive applicants for photonic integration as demonstrated by the laser-on-fiber configuration.

Progress and Perspective toward Continuous-Wave Organic Solid-State Lasers

A continuous-wave (CW) organic solid-state laser is highly desirable for spectroscopy, sensing, and communications, but is a significant challenge in optoelectronics. The accumulation of long-lived triplet excitons and relevant excited-state absorptions, as well as singlet-triplet annihilation, are the main obstacles to CW lasing. Here, progress in singlet- and triplet-state utilizations in organic gain media is reviewed to reveal the issues in working with triplets. Then, exciton behaviors that inhibit light oscillations during long excitation pulses are discussed. Further, recent advances in increasing organic lasing pulse widths from microseconds toward the indication of CW operation are summarized with respect to molecular designs, advanced resonator architectures, triplet scavenging, and potential triplet contribution strategies. Finally, future directions and perspectives are proposed for achieving stable CW organic lasers with significant triplet contribution.

Nonvolatile Memory Organic Light-Emitting Transistors

In the field of active-matrix organic light emitting display (AMOLED), large-size and ultra-high-definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light-emitting transistor (Fe-OLET) device which integrates the switching capability, light-emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe-OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof-of-concept device optimized through interfacial modification approach exhibits 20 times improved field-effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light-emitting capabilities within Fe-OLET provides a promising internal-storage-driving paradigm, thus creating a new pathway for deploying storage capacitor-free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on-chip advanced display applications.

Dibenzothiophene Sulfone-Based Ambipolar-Transporting Blue-Emissive Organic Semiconductors Towards Simple-Structured Organic Light-Emitting Transistors

The development of blue-emissive ambipolar organic semiconductor is an arduous target due to the large energy gap, but is an indispensable part for electroluminescent device, especially for the transformative display technology of simple-structured organic light-emitting transistor (SS-OLET). Herein, we designed and synthesized two new dibenzothiophene sulfone-based high mobility blue-emissive organic semiconductors (DNaDBSOs), which demonstrate superior optical property with solid-state photoluminescent quantum yield of 46-67 % and typical ambipolar-transporting properties in SS-OLETs with symmetric gold electrodes. Comprehensive experimental and theoretical characterizations reveal the natural of ambipolar property for such blue-emissive DNaDBSOs-based materials is ascribed to a synergistic effect on lowering LUMO level and reduced electron injection barrier induced by the interfacial dipoles effect on gold electrodes due to the incorporation of appropriate DBSO unit. Finally, efficient electroluminescence properties with high-quality blue emission (CIE (0.179, 0.119)) and a narrow full-width at half-maximum of 48 nm are achieved for DNaDBSO-based SS-OLET, showing good spatial control of the recombination zone in conducting channel. This work provides a new avenue for designing ambipolar emissive organic semiconductors by incorporating the synergistic effect of energy level regulation and molecular-metal interaction, which would advance the development of superior optoelectronic materials and their high-density integrated optoelectronic devices and circuits.

Thermally Activated Long Persistent Luminescence of Organic Inorganic Metal Halides

Long persistent luminescence (LPL) materials of SrAl₂ O₄ doped with Eu²⁺ or Dy³⁺ can maintain emission over hours after ceasing the excitation but suffer from insolubility, high cost, and harsh preparation. Recently, organic LPL of guest-host exciplex systems has been demonstrated via an intermediate charge-separated state with flexible design but poor air-stability. Here, we synthesized a nontoxic two-dimensional organic-inorganic metal hybrid halides (OIMHs), called PBA₂ [ZnX₄ ] with X=Br or Cl and PBA=4-phenylbenzylamine. These materials exhibit stable LPL emission over minutes at room-temperature, which is two orders of magnitude longer than those of previously reported OIMHs. The mechanism study shows that the LPL emission comes from thermally activated charge separation state rather than room-temperature phosphorescence. Moreover, the LPL of PBA₂ [ZnX₄ ] can be excited by low power sources, representing an effective strategy for developing low-cost and high-stability LPL systems.

Simultaneously improving the quality factor and outcoupling efficiency of organic light-emitting field-effect transistors with planar microcavity

Organic light-emitting field-effect transistors (OLEFETs) are regarded as an ideal device platform to achieve electrically pumped organic semiconductor lasers (OSLs). However, the incorporation of a high-quality resonator into OLEFETs is still challenging since the process usually induces irreparable deterioration to the electric-related emission performance of the device. We here propose a dual distributed Bragg reflector (DBR)-based planar microcavity, which is verified to be highly compatible with the OLEFETs. The dual DBR planar microcavity shows the great advantage of simultaneously promoting the quality (Q) factor and outcoupling efficiency of the device due to the reduced optical loss. As a result, a moderately high Q factor of ∼160, corresponding to EL spectrum linewidth as narrow as 3.2 nm, concomitantly with high outcoupling efficiency (∼7.1%) has been successfully obtained. Our results manifest that the dual DBR-based planar microcavity is a promising type of resonator, which might find potential applications in improving the spectra and efficiency performance of OLEFETs as well as in OLEFET-based electrically pumped OSLs.