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Xu J, Luo Z, Chen L, Zhou X, Zhang H, Zheng Y, Wei L. Recent advances in flexible memristors for advanced computing and sensing. MATERIALS HORIZONS 2024; 11:4015-4036. [PMID: 38919028 DOI: 10.1039/d4mh00291a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Conventional computing systems based on von Neumann architecture face challenges such as high power consumption and limited data processing capability. Improving device performance via scaling guided by Moore's Law becomes increasingly difficult. Emerging memristors can provide a promising solution for achieving high-performance computing systems with low power consumption. In particular, the development of flexible memristors is an important topic for wearable electronics, which can lead to intelligent systems in daily life with high computing capacity and efficiency. Here, recent advances in flexible memristors are reviewed, from operating mechanisms and typical materials to representative applications. Potential directions and challenges for future study in this area are also discussed.
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Affiliation(s)
- Jiaming Xu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Ziwang Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Long Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Xuhui Zhou
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Haozhe Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Yuanjin Zheng
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
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Zhang X, Yu H, Li W, Chen Y, Zeng N, Shi W, Ling H, Huang W, Yi M. High-Yield Production of Solution-Processed Highly Robust Organic Artificial Synapses by Thermal Treatments. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39174345 DOI: 10.1021/acsami.4c08914] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2024]
Abstract
A promising approach for implementing biomimetic systems relies on organic electronic devices designed to emulate neural synapses. However, organic artificial synapses face challenges in achieving high yield and robustness, rendering them difficult to use in practical applications. In this work, a high-yield and highly stable bulk heterojunction (BHJ) synaptic device composed of Poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) was fabricated via a simple solution process followed by thermal treatments. The crystallinity of P3HT and the precipitation of PCBM in BHJ films can be controlled by the thermal annealing temperatures. At 80 °C, P3HT reaches its highest crystallinity, while PCBM remains uniformly distributed. This thermal treatment significantly contributes to the fabrication of devices characterized by a high yield rate, reaching 98.43%. Additionally, this device remained operational even after being immersed in deionized water, ethanol, and seawater for 100 h. More importantly, it exhibited high elasticity over a wide temperature range from -90 to 310 °C. Finally, this device was utilized to construct a biomimetic vehicle with autonomous memory learning capabilities. After repeated training, the avoidance time was optimized by 31.4%. The robust P3HT:PCBM artificial synapses hold great promise for advancing the development of biomimetic electronic products in extreme environments.
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Affiliation(s)
- Xu Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Haipeng Yu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Ye Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Nuolan Zeng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Wei Shi
- Key Lab for Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
- Key Lab for Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
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Tsuruoka T, Terabe K. Solid polymer electrolyte-based atomic switches: from materials to mechanisms and applications. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2024; 25:2342772. [PMID: 38766515 PMCID: PMC11100443 DOI: 10.1080/14686996.2024.2342772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 04/09/2024] [Indexed: 05/22/2024]
Abstract
As miniaturization of semiconductor memory devices is reaching its physical and technological limits, there is a demand for memory technologies that operate on new principles. Atomic switches are nanoionic devices that show repeatable resistive switching between high-resistance and low-resistance states under bias voltage applications, based on the transport of metal ions and redox reactions in solids. Their essential structure consists of an ion conductor sandwiched between electrochemically active and inert electrodes. This review focuses on the resistive switching mechanism of atomic switches that utilize a solid polymer electrolyte (SPE) as the ion conductor. Owing to the superior properties of polymer materials such as mechanical flexibility, compatibility with various substrates, and low fabrication costs, SPE-based atomic switches are a promising candidate for the next-generation of volatile and nonvolatile memories. Herein, we describe their operating mechanisms and key factors for controlling the device performance with different polymer matrices. In particular, the effects of moisture absorption in the polymer matrix on the resistive switching behavior are addressed in detail. As potential applications, atomic switches with inkjet-printed SPE and quantum conductance behavior are described. SPE-based atomic switches also have great potential in use for neuromorphic devices. The development of these devices will be enhanced using nanoarchitectonics concepts, which integrate functional materials and devices.
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Affiliation(s)
- Tohru Tsuruoka
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan
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Jung U, Kim M, Jang J, Bae J, Kang IM, Lee S. Formation of Cluster-Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio-Mimetic Synaptic Weight Distributions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307494. [PMID: 38087893 PMCID: PMC10916635 DOI: 10.1002/advs.202307494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Revised: 11/15/2023] [Indexed: 03/07/2024]
Abstract
With increasing demand for wearable electronics capable of computing huge data, flexible neuromorphic systems mimicking brain functions have been receiving much attention. Despite considerable efforts in developing practical neural networks utilizing several types of flexible artificial synapses, it is still challenging to develop wearable systems for complex computations due to the difficulties in emulating continuous memory states in a synaptic component. In this study, polymer conductivity is analyzed as a crucial factor in determining the growth dynamics of metallic filaments in organic memristors. Moreover, flexible memristors with bio-mimetic synaptic functions such as linearly tunable weights are demonstrated by engineering the polymer conductivity. In the organic memristor, the cluster-structured filaments are grown within the polymer medium in response to electric stimuli, resulting in gradual resistive switching and stable synaptic plasticity. Additionally, the device exhibits the continuous and numerous non-volatile memory states due to its low leakage current. Furthermore, complex hardware neural networks including ternary logic operators and a noisy image recognitions system are successfully implemented utilizing the developed memristor arrays. This promising concept of creating flexible neural networks with bio-mimetic weight distributions will contribute to the development of a new computing architecture for energy-efficient wearable smart electronics.
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Affiliation(s)
- Uihoon Jung
- School of Electronics Engineeringand School of Electronic and Electrical EngineeringKyungpook National University80 Daehak‐ro, Buk‐guDaegu702‐701Republic of Korea
| | - Miseong Kim
- School of Electronics Engineeringand School of Electronic and Electrical EngineeringKyungpook National University80 Daehak‐ro, Buk‐guDaegu702‐701Republic of Korea
| | - Jaewon Jang
- School of Electronics Engineeringand School of Electronic and Electrical EngineeringKyungpook National University80 Daehak‐ro, Buk‐guDaegu702‐701Republic of Korea
| | - Jin‐Hyuk Bae
- School of Electronics Engineeringand School of Electronic and Electrical EngineeringKyungpook National University80 Daehak‐ro, Buk‐guDaegu702‐701Republic of Korea
| | - In Man Kang
- School of Electronics Engineeringand School of Electronic and Electrical EngineeringKyungpook National University80 Daehak‐ro, Buk‐guDaegu702‐701Republic of Korea
| | - Sin‐Hyung Lee
- School of Electronics Engineeringand School of Electronic and Electrical EngineeringKyungpook National University80 Daehak‐ro, Buk‐guDaegu702‐701Republic of Korea
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Chen W, Mou Z, Xin Y, Li H, Wang T, Chen Y, Chen L, Yang BR, Chen Z, Luo Y, Liu GS. Self-Assembled Monolayer and Nanoparticles Coenhanced Fragmented Silver Nanowire Network Memristor. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6057-6067. [PMID: 38285926 DOI: 10.1021/acsami.3c15351] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/31/2024]
Abstract
Silver nanowire (AgNW) networks with self-assembled structures and synaptic connectivity have been recently reported for constructing neuromorphic memristors. However, resistive switching at the cross-point junctions of the network is unstable due to locally enhanced Joule heating and the Gibbs-Thomson effect, which poses an obstacle to the integration of threshold switching and memory function in the same AgNW memristor. Here, fragmented AgNW networks combined with Ag nanoparticles (AgNPs) and mercapto self-assembled monolayers (SAMs) are devised to construct memristors with stable threshold switching and memory behavior. In the above design, the planar gaps between NW segments are for resistive switching, the AgNPs act as metal islands in the gaps to reduce threshold voltage (Vth) and holding voltage (Vhold), and the SAMs suppress surface atom diffusion to avoid Oswald ripening of the AgNPs, which improves switching stability. The fragmented NW-NP/SAM memristors not only circumvent the side effects of conventional NW-stacked junctions to provide durable threshold switching at >Vth but also exhibit synaptic characteristics such as long-term potentiation at ultralow voltage (≪Vth). The combination of NW segments, nanoparticles, and SAMs blazes a new trail for integrating artificial neurons and synapses in AgNW network memristors.
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Affiliation(s)
- Weizhen Chen
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Key Laboratory of Visible Light Communications of Guangzhou, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
| | - Zongxia Mou
- Key Laboratory of Biomaterials of Guangdong Higher Education Institutes, Department of Biomedical Engineering, Jinan University, Guangzhou 510632, China
| | - Yijia Xin
- Department of Physics, Jinan University, Guangzhou 510632, China
| | - Haichuan Li
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Key Laboratory of Visible Light Communications of Guangzhou, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
| | - Tianqi Wang
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Key Laboratory of Visible Light Communications of Guangzhou, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
| | - Yaofei Chen
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Key Laboratory of Visible Light Communications of Guangzhou, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
| | - Lei Chen
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Key Laboratory of Visible Light Communications of Guangzhou, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
| | - Bo-Ru Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China
| | - Zhe Chen
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Key Laboratory of Visible Light Communications of Guangzhou, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
| | - Yunhan Luo
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Key Laboratory of Visible Light Communications of Guangzhou, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
| | - Gui-Shi Liu
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Key Laboratory of Visible Light Communications of Guangzhou, Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
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Diao Y, Yang F, Jia Y, Su M, Hu J, Sun J, Jiang D, Wang D, Pu Y, Zhao Y, Sun B. Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2477-2488. [PMID: 38185994 DOI: 10.1021/acsami.3c14581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Memristors are considered the best candidates for nonvolatile memory and advanced computing technologies, and polymer and two-dimensional (2D) materials have been developed as functional layer materials in memristors with high-performance resistive switching characteristics. In this work, a polymer memristor with a graphene (Gr)-doped poly(vinyl alcohol) (PVA) composite acting as the functional layer was prepared. The memristor device exhibited superior performance with good retention and a comparatively large ON/OFF ratio at room temperature. Additionally, excellent logic operations were achieved. These satisfactory properties can be attributed to trap-induced carrier trapping and detrapping. In addition, the device exhibited stable bipolar resistive switching behavior over a moderate temperature range. This work provides insight into the transmission mechanism of polymer-based memristors and the reasons why they become unstable at high temperatures, demonstrating the potential applications of PVA-Gr-based polymer memristors as logic circuit units in integrated chips and artificial intelligence.
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Affiliation(s)
- Yangmin Diao
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Feng Yang
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yongfang Jia
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Minghui Su
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Junda Hu
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jianwei Sun
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Dongheng Jiang
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Dan Wang
- State Key Laboratory of Organic - Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yuan Pu
- State Key Laboratory of Organic - Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yong Zhao
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
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Sun B, Chen Y, Zhou G, Cao Z, Yang C, Du J, Chen X, Shao J. Memristor-Based Artificial Chips. ACS NANO 2024; 18:14-27. [PMID: 38153841 DOI: 10.1021/acsnano.3c07384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2023]
Abstract
Memristors, promising nanoelectronic devices with in-memory resistive switching behavior that is assembled with a physically integrated core processing unit (CPU) and memory unit and even possesses highly possible multistate electrical behavior, could avoid the von Neumann bottleneck of traditional computing devices and show a highly efficient ability of parallel computation and high information storage. These advantages position them as potential candidates for future data-centric computing requirements and add remarkable vigor to the research of next-generation artificial intelligence (AI) systems, particularly those that involve brain-like intelligence applications. This work provides an overview of the evolution of memristor-based devices, from their initial use in creating artificial synapses and neural networks to their application in developing advanced AI systems and brain-like chips. It offers a broad perspective of the key device primitives enabling their special applications from the view of materials, nanostructure, and mechanism models. We highlight these demonstrations of memristor-based nanoelectronic devices that have potential for use in the field of brain-like AI, point out the existing challenges of memristor-based nanodevices toward brain-like chips, and propose the guiding principle and promising outlook for future device promotion and system optimization in the biomedical AI field.
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Affiliation(s)
- Bai Sun
- National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Department of Hepatobiliary Surgery, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, People's Republic of China
| | - Zelin Cao
- National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Department of Hepatobiliary Surgery, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Junmei Du
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Xiaoliang Chen
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Jinyou Shao
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
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Li H, Gao Q, Gao J, Huang J, Geng X, Wang G, Liang B, Li X, Wang M, Xiao Z, Chu PK, Huang A. Controllability of the Conductive Filament in Porous SiO x Memristors by Humidity-Mediated Silver Ion Migration. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46449-46459. [PMID: 37738541 DOI: 10.1021/acsami.3c07179] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/24/2023]
Abstract
Oxide-based memristors composed of Ag/porous SiOx/Si stacks are fabricated using different etching time durations between 0 and 90 s, and the memristive properties are analyzed in the relative humidity (RH) range of 30-60%. The combination of humidity and porous structure provides binding sites to control silver filament formation with a confined nanoscale channel. The memristive properties of devices show high on/off ratios up to 108 and a dispersion coefficient of 0.1% of the high resistance state (CHRS) when the RH increases to 60%. Humidity-mediated silver ion migration in the porous SiOx memristors is investigated, and the mechanism leading to the synergistic effects between the porous structure and environmental humidity is elucidated. The artificial neural network constructed theoretically shows that the recognition rate increases from 60.9 to 85.29% in the RH range of 30-60%. The results and theoretical understanding provide insights into the design and optimization of oxide-based memristors in neuromorphic computing applications.
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Affiliation(s)
- Haoze Li
- School of Physics, Beihang University, Beijing 100191, China
| | - Qin Gao
- School of Physics and School of Chemistry, Beihang University, Beijing 100191, China
| | - Juan Gao
- School of Physics, Beihang University, Beijing 100191, China
| | - Jiangshun Huang
- School of Physics, Beihang University, Beijing 100191, China
| | - Xueli Geng
- School of Physics, Beihang University, Beijing 100191, China
| | - Guoxing Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Bo Liang
- School of Physics, Beihang University, Beijing 100191, China
| | - Xinghe Li
- School of Physics, Beihang University, Beijing 100191, China
| | - Mei Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Zhisong Xiao
- School of Physics, Beihang University, Beijing 100191, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 999077, China
| | - Anping Huang
- School of Physics, Beihang University, Beijing 100191, China
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Zhang T, Wang L, Ding W, Zhu Y, Qian H, Zhou J, Chen Y, Li J, Li W, Huang L, Song C, Yi M, Huang W. Rationally Designing High-Performance Versatile Organic Memristors through Molecule-Mediated Ion Movements. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302863. [PMID: 37392013 DOI: 10.1002/adma.202302863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Revised: 06/23/2023] [Accepted: 06/25/2023] [Indexed: 07/02/2023]
Abstract
Organic memory has attracted tremendous attention for next-generation electronic elements for the molecules' striking ease of structural design. However, due to them being hardly controllable and their low ion transport, it is always essential and challenge to effectively control their random migration, pathway, and duration. There are very few effective strategies, and specific platforms with a view to molecules with specific coordination-groups-regulating ions have been rarely reported. In this work, as a generalized rational design strategy, the well-known tetracyanoquinodimethane (TCNQ) is introduced with multiple coordination groups and small plane structure into a stable polymers framework to modulate Ag migration and then achieve high-performance devices with ideal productivity, low operation voltage and power, stable switching cycles, and state retention. Raman mapping demonstrates that the migrated Ag can specially coordinate with the embedded TCNQ molecules. Notably, the TCNQ molecule distribution can be modulated inside the polymer framework and regulate the memristive behaviors through controlling the formed Ag conductive filaments (CFs) as demonstrated by Raman mapping, in situ conductive atomic force microscopy (C-AFM), X-ray diffraction (XRD) and depth-profiling X-ray photoelectron spectroscopy (XPS). Thus the controllable molecule-mediated Ag movements show its potential in rationally designing high-performance devices and versatile functions and is enlightening in constructing memristors with molecule-mediated ion movements.
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Affiliation(s)
- Tao Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Laiyuan Wang
- Department of Materials Science and Engineering, California NanoSystems Institute (CNSI), University of California, Los Angeles, 607 Charles E. Young Drive East, Los Angeles, CA, 90095, USA
| | - Weiwei Ding
- School of Biological Science and Medical Engineering, Beihang University, 37 Xueyuan Road, Beijing, 100083, China
| | - Yunfeng Zhu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Haowen Qian
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Jia Zhou
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Ye Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Jiayu Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Liya Huang
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Chunyuan Song
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
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Liu Y, Zhou X, Yan H, Shi X, Chen K, Zhou J, Meng J, Wang T, Ai Y, Wu J, Chen J, Zeng K, Chen L, Peng Y, Sun X, Chen P, Peng H. Highly Reliable Textile-Type Memristor by Designing Aligned Nanochannels. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301321. [PMID: 37154271 DOI: 10.1002/adma.202301321] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Revised: 05/02/2023] [Indexed: 05/10/2023]
Abstract
Information-processing devices are the core components of modern electronics. Integrating them into textiles is the indispensable demand for electronic textiles to form close-loop functional systems. Memristors with crossbar configuration are regarded as promising building blocks to design woven information-processing devices that seamlessly unify with textiles. However, the memristors always suffer from severe temporal and spatial variations due to the random growth of conductive filaments during filamentary switching processes. Here, inspired by the ion nanochannels across synaptic membranes, a highly reliable textile-type memristor made of Pt/CuZnS memristive fiber with aligned nanochannels, showing small set voltage variation (<5.6%) under ultralow set voltage (≈0.089 V), high on/off ratio (≈106 ), and low power consumption (0.1 nW), is reported. Experimental evidence indicate that nanochannels with abundant active S defects can anchor silver ions and confine their migrations to form orderly and efficient conductive filaments. Such memristive performances enable the resultant textile-type memristor array to have high device-to-device uniformity and process complex physiological data like brainwave signals with high recognition accuracy (95%). The textile-type memristor arrays are mechanically durable to withstand hundreds of bending and sliding deformations, and seamlessly unified with sensing, power-supplying, and displaying textiles/fibers to form all-textile integrated electronic systems for new generation human-machine interactions.
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Affiliation(s)
- Yue Liu
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Xufeng Zhou
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Hui Yan
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Xiang Shi
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Ke Chen
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Jinyang Zhou
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Jialin Meng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Tianyu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Yulu Ai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Jingxia Wu
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Jiaxin Chen
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Kaiwen Zeng
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Yahui Peng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Xuemei Sun
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Peining Chen
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
| | - Huisheng Peng
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science and Laboratory of Advanced Materials, Fudan University, Shanghai, 200438, China
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Xiao Y, Jiang B, Zhang Z, Ke S, Jin Y, Wen X, Ye C. A review of memristor: material and structure design, device performance, applications and prospects. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2162323. [PMID: 36872944 PMCID: PMC9980037 DOI: 10.1080/14686996.2022.2162323] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/16/2022] [Revised: 12/09/2022] [Accepted: 12/21/2022] [Indexed: 06/18/2023]
Abstract
With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing can potentially overcome the current bottleneck of computer and achieve hardware breakthrough. In this review, the recent progress of memory devices in material and structure design, device performance and applications are summarized. Various resistive switching materials, including electrodes, binary oxides, perovskites, organics, and two-dimensional materials, are presented and their role in the memristor are discussed. Subsequently, the construction of shaped electrodes, the design of functional layer and other factors influencing the device performance are analyzed. We focus on the modulation of the resistances and the effective methods to enhance the performance. Furthermore, synaptic plasticity, optical-electrical properties, the fashionable applications in logic operation and analog calculation are introduced. Finally, some critical issues such as the resistive switching mechanism, multi-sensory fusion, system-level optimization are discussed.
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Affiliation(s)
- Yongyue Xiao
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Bei Jiang
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Zihao Zhang
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Shanwu Ke
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Yaoyao Jin
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Xin Wen
- Faculty of Chemical Technology and Engineering, West Pomeranian University of Technology in Szczecin, Szczecin, Poland
| | - Cong Ye
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
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12
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Dong X, Li S, Sun H, Jian L, Wei W, Chen J, Zhao Y, Chen J, Zhang X, Li Y. Optoelectronic Memristive Synapse Behavior for the Architecture of Cu 2ZnSnS 4@BiOBr Embedded in Poly(methyl methacrylate). J Phys Chem Lett 2023; 14:1512-1520. [PMID: 36745109 DOI: 10.1021/acs.jpclett.2c03939] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The great potential of artificial optoelectronic devices that are capable of mimicking biosynapse functions in brain-like neuromorphic computing applications has aroused extensive interest, and the architecture design is decisive yet challenging. Herein, a new architecture of p-type Cu2ZnSnS4@BiOBr nanosheets embedded in poly(methyl methacrylate) (PMMA) films (CZTS@BOB-PMMA) is presented acting as a switching layer, which not only shows the bipolar resistive switching features (SET/RESET voltages, ∼ -0.93/+1.35 V; retention, >104 s) and electrical- and near-infrared light-induced synapse plasticity but also demonstrates electrical-driven excitatory postsynaptic current, spiking-time-dependent plasticity, paired pulse facilitation, long-term plasticity, long- and short-term memory, and "learning-forgetting-learning" behaviors. The approach is a rewarding attempt to broaden the research of optoelectric controllable memristive devices for building neuromorphic architectures mimicking human brain functionalities.
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Affiliation(s)
- Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Siyuan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Lijuan Jian
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Wenbin Wei
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou730070, China
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13
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Wang R, Wang S, Xin Y, Cao Y, Liang Y, Peng Y, Feng J, Li Y, Lv L, Ma X, Wang H, Hao Y. All‐in‐One Compression and Encryption Engine Based on Flexible Polyimide Memristor. SMALL SCIENCE 2023. [DOI: 10.1002/smsc.202200082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023] Open
Affiliation(s)
- Rui Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China
| | - Saisai Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China
| | - Yuhan Xin
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China
| | - Yaxiong Cao
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China
| | - Yu Liang
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China
| | - Yaqian Peng
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China
| | - Jie Feng
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China
| | - Yang Li
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China
| | - Ling Lv
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China
| | - Xiaohua Ma
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China
| | - Yue Hao
- Key Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China
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