I-III-VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes

Carrier Dynamics and Recombination Pathways in Ag-In-Zn-S Quantum Dots

Strong tolerance to off-stoichiometry of group I-III-VI semiconductors in their nanocrystal form allows fabrication of multinary, alloyed structures of desired properties. In particular, alloyed Cu-In-Zn-S and Ag-In-Zn-S quantum dots (QDs) have recently emerged as efficient fluorophors, in which tailoring the composition allows tuning the optical properties, and achieving photoluminescence (PL) quantum yields approaching unity. However, poor understanding of the carrier recombination mechanism in these materials limits their further development. In this work, by studying transient absorption and temperature dependent PL on bare QDs and QDs conjugated with electron scavenger molecules, we obtain a detailed picture of carrier dynamics. Our results challenge the prevailing assumption that the PL is due to a donor-acceptor-pair transition. We show that the PL occurs as a result of a recombination of a delocalized electron with a localized hole.

Ligand effect on surface reconstruction in CdSe quantum dots driven by electron injection in electroluminescence processes

The short lifetime of blue quantum dots (QDs) in the electroluminescence process is indeed one of the main obstacles that hinder their applications in new display technologies. One of the speculations about the short lifespan is believed to be the reduction reactions at the interface between the QD and the ligand caused by electron injection, but little is known about how the reactions proceed. The evolution of geometrical and electronic structures of ligated (CdSe)6 is simulated with the real-time time-dependent density functional theory (rt-TDDFT) method. Two distinct reactions are characterized in the QDs with different ligand types. One involves the localization of an electron at one specified surface atom, making the ligand separated from the QD, as well as large changes in the QD structures. The other involves the delocalization of an electron across the QD and the ligand, leading to only small changes. In the first case, the destroyed structure becomes irreversible once the ligand fails to re-bond with the QD after the electron-hole recombination. Our simulations provide direct evidence that the reduction reactions caused by electron injection are responsible for the performance loss of blue QDs in the electroluminescence process, and suggest that the delocalization of injected electrons is an interesting strategy for future studies.

Short-Wave Infrared Light-Emitting Diodes Using Colloidal CuInS2 Quantum Dots with ZnI2 Dual-Passivation

Short-wave infrared (SWIR) light-emitting diodes (LEDs) have emerged as promising technologies for diverse applications such as optical communication, biomedical imaging, surveillance, and machine vision. Colloidal quantum dots (QDs) are particularly attractive for SWIR LEDs due to their solution processability, compatibility with flexible substrates, and tunable absorption and luminescence. However, the presence of toxic elements or precious metals in most SWIR-emitting QDs poses health, environmental, and cost challenges. In this context, CuInS2 (CIS) QDs are known for low toxicity, cost-effective fabrication, and SWIR-light emitting capability. However, CIS QDs have not yet been directly utilized to fabricate SWIR LEDs to date, which is due to low particle stability, inefficient charge carrier recombination, and significantly blue-shifted luminescence after integrating into LED devices. To address challenges, we propose a dual-passivation strategy using ZnI2 as a chemical additive to enhance both the optical property of plain CIS QDs and charge carrier recombination upon LED device implementation. The resulting CIS-QD-based LEDs exhibit a stable SWIR electroluminescence (EL) peak (over 1000 nm) with a high EL radiance and a record external quantum efficiency in the SWIR region. Our study represents a significant step forward in SWIR-QLED technology, offering a pathway for the development of high-performance, low-cost, and nontoxic SWIR light sources.

Multinary light absorbing semiconductor nanocrystals with diversified electronic and optical properties

We report multinary CuZn2AS x Se4-x semiconductor nanocrystals in a wurtzite phase, achieved via hot-injection synthesis. These nanocrystals exhibit a tunable bandgap and photoluminescence in the visible range. We employ density functional theory and virtual crystal approximation to reveal the bandgap trends influenced by the main group metals and S/Se alloying.

Multishell Silver Indium Selenide-Based Quantum Dots and Their Poly(methyl methacrylate) Composites for Application in Red-Light-Emitting Diodes

In this work, the production of novel multishell silver indium selenide quantum dots (QDs) shelled with zinc selenide and zinc sulfide through a multistep synthesis precisely designed to develop high-quality red-emitting QDs is explored. The formation of the multishell nanoheterostructure significantly improves the photoluminescence quantum yield of the nanocrystals from 3% observed for the silver indium selenide core to 27 and 46% after the deposition of the zinc selenide and zinc sulfide layers, respectively. Moreover, the incorporation of the multishelled QDs in a poly(methyl methacrylate) (PMMA) matrix via in situ radical polymerization is investigated, and the role of thiol ligand passivation is proven to be fundamental for the stabilization of the QDs during the polymerization step, preventing their decomposition and the relative luminescence quenching. In particular, the role of interface chemistry is investigated by considering both surface passivation by inorganic zinc chalcogenide layers, which allows us to improve the optical properties, and organic thiol ligand passivation, which is fundamental to ensuring the chemical stability of the nanocrystals during in situ radical polymerization. In this way, it is possible to produce silver-indium selenide QD-PMMA composites that exhibit bright red luminescence and high transparency, making them promising for potential applications in photonics. Finally, it is demonstrated that the new silver indium selenide QD-PMMA composites can serve as an efficient color conversion layer for the production of red light-emitting diodes.

Low-Temperature Cross-Linked Hole Transport Layer for High-Performance Blue Quantum-Dot Light-Emitting Diodes

Quantum-dot light-emitting diodes (QLEDs), a kind of promising optoelectronic device, demonstrate potential superiority in next-generation display technology. Thermal cross-linked hole transport materials (HTMs) have been employed in solution-processed QLEDs due to their excellent thermal stability and solvent resistance, whereas the unbalanced charge injection and high cross-linking temperature of cross-linked HTMs can inhibit the efficiency of QLEDs and limit their application. Herein, a low-temperature cross-linked HTM of 4,4'-bis(3-(((4-vinylbenzyl)oxy)methyl)-9H-carbazol-9-yl)-1,1'-biphenyl (DV-CBP) with a flexible styrene side chain is introduced, which reduces the cross-linking temperature to 150 °C and enhances the hole mobility up to 1.01 × 10-3 cm2 V-1 s-1. More importantly, the maximum external quantum efficiency of 21.35% is successfully obtained on the basis of the DV-CBP as a cross-linked hole transport layer (HTL) for blue QLEDs. The low-temperature cross-linked high-mobility HTL using flexible side chains could be an excellent alternative for future HTL development.

High-Color-Rendition White QLEDs by Balancing Red, Green and Blue Centres in Eco-Friendly ZnCuGaS:In@ZnS Quantum Dots

White light-emitting diodes (WLEDs) are the key components in the next-generation lighting and display devices. The inherent toxicity of Cd/Pb-based quantum dots (QDs) limits the further application in WLEDs. Recently, more attention is focused on eco-friendly QDs and their WLEDs, especially the phosphor-free WLEDs based on mono-component, which profits from bias-insensitive color stability. However, the imbalanced carrier distribution between red-green-blue luminescent centers, even the absence of a certain luminescent center, hinders their balanced and stable photoluminescence/electroluminescence (PL/EL). Here, an In3+-doped strategy in Zn-Cu-Ga-S@ZnS QDs is first proposed, and the balanced carrier distribution is realized by non-equivalent substitution and In3+ doping concentration modulation. The alleviation of the green emitter by the In3+-related red emitter and the compensation of blue emitter by the Zn-related electronic states contribute to the balanced red-green-blue emitting with high PL quantum yield (PLQY) of 95.3% and long lifetime (T90) of over 1100 h in atmospheric conditions. Thus, the In3+-doped WLEDs can achieve exceedingly slight proportional variations between red-green-blue EL intensity over time (∆CIE = (0.007, 0.009)), and high champion CRI of 94.9. This study proposes a single-component QD with balanced and stable red-green-blue PL/EL spectrum, meeting the requirements of lighting and display.

Recent advances in photoelectrochemical hydrogen production using I-III-VI quantum dots

Photoelectrochemical (PEC) water splitting, recognized for its potential in producing solar hydrogen through clean and sustainable methods, has gained considerable interest, particularly with the utilization of semiconductor nanocrystal quantum dots (QDs). This minireview focuses on recent advances in PEC hydrogen production using I-III-VI semiconductor QDs. The outstanding optical and electrical properties of I-III-VI QDs, which can be readily tuned by modifying their size, composition, and shape, along with an inherent non-toxic nature, make them highly promising for PEC applications. The performance of PEC devices using these QDs can be enhanced by various strategies, including ligand modification, defect engineering, doping, alloying, and core/shell heterostructure engineering. These approaches have notably improved the photocurrent densities for hydrogen production, achieving levels comparable to those of conventional heavy-metal-based counterparts. Finally, this review concludes by addressing the present challenges and future prospects of these QDs, underlining crucial steps for their practical applications in solar hydrogen production.

Photoluminescence from Two-Phase Nanocomposites Embedded in Polymers

A set of polymer-embedded, two-colored nanocomposites were prepared where the co-existing emission peaks (~578 nm and ~650 nm) had different ratios at their emission thresholds. The nanocomposite samples were simultaneously excited by a 405 nm laser, and the growth of photoluminescence intensities was studied as a function of excitation intensity. The two peaks showed different growth evolution mechanisms. The factors impacting this difference could be (1) energy transfer between the two sized nanoparticles; (2) relaxation mechanism of smaller nanoparticles; and (3) material properties of the polymer.

Enhanced Stability and Highly Bright Electroluminescence of AgInZnS/CdS/ZnS Quantum Dots through Complete Isolation of Core and Shell via a CdS Interlayer

An approach for synthesizing AgInZnS/CdS/ZnS core-shell-shell quantum dots (QDs) that demonstrate exceptional stability and electroluminescence (EL) performance is introduced. This approach involves incorporating a cadmium sulfide (CdS) interlayer between an AgInZnS (AIZS) core and a zinc sulfide (ZnS) shell to prevent the diffusion of Zn ions into the AIZS core and the cation exchange at the core-shell interface. Consequently, a uniform and thick ZnS shell, with a thickness of 2.9 nm, is formed, which significantly enhances the stability and increases the photoluminescence quantum yield (87.5%) of the QDs. The potential for AIZS/CdS/ZnS QDs in electroluminescent devices is evaluated, and an external quantum efficiency of 9.6% in the 645 nm is achieved. These findings highlight the importance of uniform and thick ZnS shells in improving the stability and EL performance of QDs.

Chiroptically Active Multi-Modal Calcium Carbonate-Based Nanocomposites

The development of multimodal nano- and micro-structures has become an increasingly popular area of research in recent years. In particular, the combination of two or more desirable properties within a single structure opens multiple opportunities from biomedicine, sensing, and catalysis, to a variety of optical applications. Here, for the first time, we report the synthesis and characterization of multimodal chiroptically active CaCO3 nanocomposites. These composites have been prepared by a modified microemulsion method in the presence of an amino acid (cysteine). Following this, additional modalities have been introduced by loading the composites with luminescent nanoparticles or doping with Eu3+ ions. The luminescent composites have been produced by the incorporation of CuInZnS/ZnS or CdSe@ZnS/ZnS core/shell quantum dots, or via doping with trivalent europium. In this manner, we have produced chiroptically active composites with orange, green, and red luminescence. Overall, this work demonstrates the unique advantage and potential of our approach and new class of chiroptically active CaCO3 nanocomposites, which display tunable functionality to specific requirements via the incorporation of desired ions, nanoparticles, and chirality of the structure.

Eco-Friendly Zn-Ag-In-Ga-S Quantum Dots: Amorphous Indium Sulfide Passivated Silver/Sulfur Vacancies Achieving Efficient Red Light-Emitting Diodes

I-III-VI quantum dots (QDs) and derivatives (I, III, and VI are Ag+/Cu+, Ga3+/In3+, and S2-/Se2-, respectively) are the ideal candidates to replace II-VI (e.g., CdSe) and perovskite QDs due to their nontoxicity, pure color, high photoluminescence quantum yield (PLQY), and full visible coverage. However, the chaotic cation alignment in multielement systems can easily lead to the formation of multiple surface vacancies, highlighted as VI and VVI, leading to nonradiative recombination and nonequilibrium carrier distribution, which severely limit the performance improvement of materials and devices. Here, based on Zn-Ag-In-Ga-S QDs, we construct an ultrathin indium sulfide shell that can passivate electron vacancies and convert donor/acceptor level concentrations. The optimized In-rich 2-layer indium sulfide structure not only enhances the radiative recombination rate by preventing further VS formation but also achieves the typical DAP emission enhancement, achieving a significant increase in PLQY to 86.2% at 628 nm. Moreover, the optimized structure can mitigate the lattice distortion and make the carrier distribution in the interior of the QDs more balanced. On this basis, red QD light-emitting diodes (QLEDs) with the highest external quantum efficiency (EQE; 5.32%) to date were obtained, providing a novel scheme for improving I-III-VI QD-based QLED efficiency.

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

I-III-VI2 group quantum dots (QDs) have attracted high attention in photoelectronic conversion applications, especially for QD-sensitized solar cells (QDSSCs). This group of QDs has become the mainstream light-harvesting material in QDSSCs due to the ability to tune their electronic properties through size, shape, and composition and the ability to assemble the nanocrystals on the surface of TiO2. Moreover, these nanocrystals can be produced relatively easily via cost-effective solution-based synthetic methods and are composed of low-toxicity elements, which favors their integration into the market. This review describes the methods developed to prepare I-III-VI2 QDs (AgInS2 and CuInS2 were excluded) and control their optoelectronic properties to favor their integration into QDSSCs. Strategies developed to broaden the optoelectronic response and decrease the surface-defect states of QDs in order to promote the fast electron injection from QDs into TiO2 and achieve highly efficient QDSSCs will be described. Results show that heterostructures obtained after the sensitization of TiO2 with I-III-VI2 QDs could outperform those of other QDSSCs. The highest power-conversion efficiency (15.2%) was obtained for quinary Cu-In-Zn-Se-S QDs, along with a short-circuit density (JSC) of 26.30 mA·cm-2, an open-circuit voltage (VOC) of 802 mV and a fill factor (FF) of 71%.

A Review on Multiple I-III-VI Quantum Dots: Preparation and Enhanced Luminescence Properties

I-III-VI type QDs have unique optoelectronic properties such as low toxicity, tunable bandgaps, large Stokes shifts and a long photoluminescence lifetime, and their emission range can be continuously tuned in the visible to near-infrared light region by changing their chemical composition. Moreover, they can avoid the use of heavy metal elements such as Cd, Hg and Pb and highly toxic anions, i.e., Se, Te, P and As. These advantages make them promising candidates to replace traditional binary QDs in applications such as light-emitting diodes, solar cells, photodetectors, bioimaging fields, etc. Compared with binary QDs, multiple QDs contain many different types of metal ions. Therefore, the problem of different reaction rates between the metal ions arises, causing more defects inside the crystal and poor fluorescence properties of QDs, which can be effectively improved by doping metal ions (Zn²⁺, Mn²⁺ and Cu⁺) or surface coating. In this review, the luminous mechanism of I-III-VI type QDs based on their structure and composition is introduced. Meanwhile, we focus on the various synthesis methods and improvement strategies like metal ion doping and surface coating from recent years. The primary applications in the field of optoelectronics are also summarized. Finally, a perspective on the challenges and future perspectives of I-III-VI type QDs is proposed as well.