1
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Wang A, Wu X, Zhao S, Han ZV, Shi Y, Cerullo G, Wang F. Electrically tunable non-radiative lifetime in WS 2/WSe 2 heterostructures. NANOSCALE 2024. [PMID: 38967228 DOI: 10.1039/d4nr01982b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
Van der Waals heterostructures based on transition metal dichalcogenides (TMDs) have emerged as excellent candidates for next-generation optoelectronics and valleytronics, due to their fascinating physical properties. The understanding and active control of the relaxation dynamics of heterostructures play a crucial role in device design and optimization. Here, we investigate the back-gate modulation of exciton dynamics in a WS2/WSe2 heterostructure by combining time-resolved photoluminescence (TRPL) and transient absorption spectroscopy (TAS) at cryogenic temperatures. We find that the non-radiative relaxation lifetimes of photocarriers in heterostructures can be electrically controlled for samples with different twist-angles, whereas such lifetime tuning is not present in standalone monolayers. We attribute such an observation to doping-controlled competition between interlayer and intralayer recombination pathways in high-quality WS2/WSe2 samples. The simultaneous measurement of TRPL and TAS lifetimes within the same sample provides additional insight into the influence of coexisting excitons and background carriers on the photo-response, and points to the potential of tailoring light-matter interactions in TMD heterostructures.
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Affiliation(s)
- Anran Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
| | - Xingguang Wu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Siwen Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Zheng Vitto Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China
| | - Yi Shi
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
| | - Giulio Cerullo
- Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
- Istituto di Fotonica e Nanotecnologie (IFN), CNR, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
| | - Fengqiu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
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2
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Yoon Y, Lu Z, Uzundal C, Qi R, Zhao W, Chen S, Feng Q, Kim W, Naik MH, Watanabe K, Taniguchi T, Louie SG, Crommie MF, Wang F. Terahertz phonon engineering with van der Waals heterostructures. Nature 2024:10.1038/s41586-024-07604-9. [PMID: 38926584 DOI: 10.1038/s41586-024-07604-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Accepted: 05/24/2024] [Indexed: 06/28/2024]
Abstract
Phonon engineering at gigahertz frequencies forms the foundation of microwave acoustic filters1, acousto-optic modulators2 and quantum transducers3,4. Terahertz phonon engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. Despite their potential, methods for engineering terahertz phonons have been limited due to the challenges of achieving the required material control at subnanometre precision and efficient phonon coupling at terahertz frequencies. Here we demonstrate the efficient generation, detection and manipulation of terahertz phonons through precise integration of atomically thin layers in van der Waals heterostructures. We used few-layer graphene as an ultrabroadband phonon transducer that converts femtosecond near-infrared pulses to acoustic-phonon pulses with spectral content up to 3 THz. A monolayer WSe2 is used as a sensor. The high-fidelity readout was enabled by the exciton-phonon coupling and strong light-matter interactions. By combining these capabilities in a single heterostructure and detecting responses to incident mechanical waves, we performed terahertz phononic spectroscopy. Using this platform, we demonstrate high-Q terahertz phononic cavities and show that a WSe2 monolayer embedded in hexagonal boron nitride can efficiently block the transmission of terahertz phonons. By comparing our measurements to a nanomechanical model, we obtained the force constants at the heterointerfaces. Our results could enable terahertz phononic metamaterials for ultrabroadband acoustic filters and modulators and could open new routes for thermal engineering.
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Affiliation(s)
- Yoseob Yoon
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Department of Mechanical and Industrial Engineering, Northeastern University, Boston, MA, USA.
| | - Zheyu Lu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Graduate Group in Applied Science and Technology, University of California, Berkeley, CA, USA
| | - Can Uzundal
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Chemistry, University of California, Berkeley, CA, USA
| | - Ruishi Qi
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Wenyu Zhao
- Department of Physics, University of California, Berkeley, CA, USA
| | - Sudi Chen
- Department of Physics, University of California, Berkeley, CA, USA
- Kavli Energy NanoScience Institute, Berkeley, CA, USA
| | - Qixin Feng
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Woochang Kim
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Mit H Naik
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Steven G Louie
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Michael F Crommie
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoScience Institute, Berkeley, CA, USA
| | - Feng Wang
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Kavli Energy NanoScience Institute, Berkeley, CA, USA.
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3
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Sayyad M, Kopaczek J, Gilardoni CM, Chen W, Xiong Y, Yang S, Watanabe K, Taniguchi T, Kudrawiec R, Hautier G, Atatüre M, Tongay SA. The Defects Genome of Janus Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403583. [PMID: 38743929 DOI: 10.1002/adma.202403583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2024] [Revised: 05/02/2024] [Indexed: 05/16/2024]
Abstract
2D Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarization field within the monolayer. While efforts are made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes that introduce unwanted grain-boundary and point defects with still unexplored effects on the material's structural and excitonic properties Through high-resolution scanning transmission electron microscopy (HRSTEM), density functional theory (DFT), and optical spectroscopy measurements; this work introduces the most encountered and energetically stable point defects. It establishes their impact on the material's optical properties. HRSTEM studies show that the most energetically stable point defects are single (VS and VSe) and double chalcogen vacancy (VS -VSe), interstitial defects (Mi), and metal impurities (MW) and establish their structural characteristics. DFT further establishes their formation energies and related localized bands within the forbidden band. Cryogenic excitonic studies on h-BN-encapsulated Janus monolayers offer a clear correlation between these structural defects and observed emission features, which closely align with the results of the theory. The overall results introduce the defect genome of Janus TMDs as an essential guideline for assessing their structural quality and device properties.
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Affiliation(s)
- Mohammed Sayyad
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ 85287, USA
| | - Jan Kopaczek
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Stanisława Wyspiańskiego 27, Wroclaw, 50-370, Poland
| | - Carmem M Gilardoni
- Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Weiru Chen
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
| | - Yihuang Xiong
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
| | - Shize Yang
- Aberration Corrected Electron Microscopy Core, Yale University, New Haven, CT 06516, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Robert Kudrawiec
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Stanisława Wyspiańskiego 27, Wroclaw, 50-370, Poland
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Seth Ariel Tongay
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ 85287, USA
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4
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Hu Z, Wang H, Wang L, Wang H. A new charge transfer pathway in the MoSe 2-WSe 2 heterostructure under the conditions of B-excitons being resonantly pumped. Phys Chem Chem Phys 2024; 26:9424-9431. [PMID: 38446138 DOI: 10.1039/d3cp05282f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Most transition metal dichalcogenide (TMD) heterostructures (HSs) exhibit a type II band alignment, leading to a charge transfer process accompanied by the transfer of spin-valley polarization and spontaneous formation of interlayer excitons. This unique band structure facilitates achieving a longer exciton lifetime and extended spin-valley polarization lifetime. However, the mechanism of charge transfer in type II TMD HSs is not fully comprehended. Here, the ultrafast charge transfer process is studied in MoSe2-WSe2 HS via valley-solved broadband pump-probe spectroscopy. Under the conditions of B-excitons of WSe2 and MoSe2 being resonantly pumped, a new charge transfer pathway through the higher energy state associated with the B-exciton is found. Meanwhile, the holes (electrons) in the WSe2 (MoSe2) layer of MoSe2-WSe2 HS produce obvious spin-valley polarization even under the condition of B-exciton of WSe2 (MoSe2) being resonantly pumped, and the lifetime can reach tens of ps, which is in stark contrast to the absence of A-exciton spin-valley polarization in monolayer WSe2 (MoSe2) under the same pumping condition. The results deepen the insight into the charge transfer process in type II TMD HSs and show the great potential of TMD HSs in the application of spin-valley electronics devices.
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Affiliation(s)
- Zifan Hu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Hai Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Lei Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Haiyu Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
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5
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Ortiz Jimenez V, Pham YTH, Zhou D, Liu M, Nugera FA, Kalappattil V, Eggers T, Hoang K, Duong DL, Terrones M, Rodriguez Gutiérrez H, Phan M. Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304792. [PMID: 38072638 PMCID: PMC10870067 DOI: 10.1002/advs.202304792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 11/04/2023] [Indexed: 02/17/2024]
Abstract
The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.
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Affiliation(s)
- Valery Ortiz Jimenez
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
- Nanoscale Device Characterization DivisionNational Institute of Standards and TechnologyGaithersburgMD20899USA
| | | | - Da Zhou
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Mingzu Liu
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | | | - Tatiana Eggers
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| | - Khang Hoang
- Center for Computationally Assisted Science and Technology and Department of PhysicsNorth Dakota State UniversityFargoND58108USA
| | - Dinh Loc Duong
- Department of PhysicsMontana State UniversityBozemanMT59717USA
| | - Mauricio Terrones
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
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6
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Cui Z, Wang H, Yang K, Shen Y, Qin K, Yuan P, Li E. Highly Sensitive and Selective Defect WS 2 Chemical Sensor for Detecting HCHO Toxic Gases. SENSORS (BASEL, SWITZERLAND) 2024; 24:762. [PMID: 38339478 PMCID: PMC10857651 DOI: 10.3390/s24030762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Revised: 01/14/2024] [Accepted: 01/17/2024] [Indexed: 02/12/2024]
Abstract
The gas sensitivity of the W defect in WS2 (VW/WS2) to five toxic gases-HCHO, CH4, CH3HO, CH3OH, and CH3CH3-has been examined in this article. These five gases were adsorbed on the VW/WS2 surface, and the band, density of state (DOS), charge density difference (CDD), work function (W), current-voltage (I-V) characteristic, and sensitivity of adsorption systems were determined. Interestingly, for HCHO-VW/WS2, the energy level contribution of HCHO is closer to the Fermi level, the charge transfer (B) is the largest (0.104 e), the increase in W is more obvious than other adsorption systems, the slope of the I-V characteristic changes more obviously, and the calculated sensitivity is the highest. To sum up, VW/WS2 is more sensitive to HCHO. In conclusion, VW/WS2 has a great deal of promise for producing HCHO chemical sensors due to its high sensitivity and selectivity for HCHO, which can aid in the precise and efficient detection of toxic gases.
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Affiliation(s)
- Zhen Cui
- School of Science, Xi’an University of Technology, Xi’an 710054, China; (H.W.); (K.Y.); (Y.S.); (K.Q.); (P.Y.)
- School of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China
| | - Hanxiao Wang
- School of Science, Xi’an University of Technology, Xi’an 710054, China; (H.W.); (K.Y.); (Y.S.); (K.Q.); (P.Y.)
| | - Kunqi Yang
- School of Science, Xi’an University of Technology, Xi’an 710054, China; (H.W.); (K.Y.); (Y.S.); (K.Q.); (P.Y.)
| | - Yang Shen
- School of Science, Xi’an University of Technology, Xi’an 710054, China; (H.W.); (K.Y.); (Y.S.); (K.Q.); (P.Y.)
| | - Ke Qin
- School of Science, Xi’an University of Technology, Xi’an 710054, China; (H.W.); (K.Y.); (Y.S.); (K.Q.); (P.Y.)
| | - Pei Yuan
- School of Science, Xi’an University of Technology, Xi’an 710054, China; (H.W.); (K.Y.); (Y.S.); (K.Q.); (P.Y.)
| | - Enling Li
- School of Science, Xi’an University of Technology, Xi’an 710054, China; (H.W.); (K.Y.); (Y.S.); (K.Q.); (P.Y.)
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7
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Lei Y, Xie X, Ma H, Ma J. Vitality of Intralayer Vibration in hBN for Effective Long-Range Interlayer Hole Transfer across High Barriers in MoSe 2/hBN/WSe 2 Heterostructures. J Phys Chem Lett 2023:11190-11199. [PMID: 38055859 DOI: 10.1021/acs.jpclett.3c03040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Introducing the two-dimensional (2D) hexagonal boron nitride (hBN) between 2D transition metal dichalcogenide (TMD) layers promises convenient manipulation of the interlayer exciton (IX) and interlayer charge transfer in TMD/hBN/TMD heterostructures, while the role of inserted hBN layers during IX formation is controversial. Employing ab initio nonadiabatic molecular dynamics (NAMD) simulations and the electron-phonon coupling model, we systematically investigate interlayer hole transfer in MoSe2/WSe2 bilayers intercalated by hBN layers with various thicknesses. The conventional direct hole transfer from MoSe2 to WSe2 is decelerated by 2-3 orders of magnitude after the hBN insertion. Meanwhile, a novel channel intermediated by a deeper hole of WSe2 becomes dominant, where the intralayer shear mode of hBN plays a crucial role by reducing the energy barriers for this new channel. The unique role of hBN layers is revealed for the first time, enriching the knowledge of the underlying microscopic mechanisms and providing instructive guidance to practical van der Waals optoelectronic devices.
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Affiliation(s)
- Yuli Lei
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoyu Xie
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Haibo Ma
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Jing Ma
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
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8
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Chen J, Yue X, Shan Y, Wang H, Han J, Wang H, Sheng C, Hu L, Liu R, Yang W, Qiu ZJ, Cong C. Twist-angle-dependent momentum-space direct and indirect interlayer excitons in WSe 2/WS 2 heterostructure. RSC Adv 2023; 13:18099-18107. [PMID: 37323440 PMCID: PMC10267672 DOI: 10.1039/d3ra02952b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 05/29/2023] [Indexed: 06/17/2023] Open
Abstract
Interlayer excitons (ILEs) in the van der Waals (vdW) heterostructures of type-II band alignment transition metal dichalcogenides (TMDCs) have attracted significant interest owing to their unique exciton properties and potential in quantum information applications. However, the new dimension that emerges with the stacking of structures with a twist angle leads to a more complex fine structure of ILEs, presenting both an opportunity and a challenge for the regulation of the interlayer excitons. In this study, we report the evolution of interlayer excitons with the twist angle in the WSe2/WS2 heterostructure and identify the direct (indirect) interlayer excitons by combining photoluminescence (PL) and density functional theory (DFT) calculations. Two interlayer excitons with opposite circular polarization assigned to the different transition paths of K-K and Q-K were observed. The nature of the direct (indirect) interlayer exciton was confirmed by circular polarization PL measurement, excitation power-dependent PL measurement and DFT calculations. Furthermore, by applying an external electric field to regulate the band structure of the WSe2/WS2 heterostructure and control the transition path of the interlayer excitons, we could successfully realize the regulation of interlayer exciton emission. This study provides more evidence for the twist-angle-based control of heterostructure properties.
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Affiliation(s)
- Jiajun Chen
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Xiaofei Yue
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Yabing Shan
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Changning Road 865 Shanghai 200050 China
| | - Jinkun Han
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Changning Road 865 Shanghai 200050 China
| | - Chenxu Sheng
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Laigui Hu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Ran Liu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Weihuang Yang
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University Hangzhou 310018 China
| | - Zhi-Jun Qiu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Chunxiao Cong
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
- Yiwu Research Institute of Fudan University Chengbei Road Yiwu City 322000 Zhejiang China
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