Graphene Nano-Optics in the Terahertz Gap

Ultrabroadband Terahertz Near-Field Nanospectroscopy with a HgCdTe Detector

While near-field infrared nanospectroscopy provides a powerful tool for nanoscale material characterization, broadband nanospectroscopy of elementary material excitations in the single-digit terahertz (THz) range remains relatively unexplored. Here, we study liquid-Helium-cooled photoconductive Hg1-XCdXTe (MCT) for use as a fast detector in near-field nanospectroscopy. Compared to the common T = 77 K operation, liquid-Helium cooling reduces the MCT detection threshold to ∼22 meV, improves the noise performance, and yields a response bandwidth exceeding 10 MHz. These improved detector properties have a profound impact on the near-field technique, enabling unprecedented broadband nanospectroscopy across a range of 5 to >50 THz (175 to >1750 cm-1, or <6 to 57 μm), i.e., covering what is commonly known as the "THz gap". Our approach has been implemented as a user program at the National Synchrotron Light Source II, Upton, USA, where we showcase ultrabroadband synchrotron nanospectroscopy of phonons in ZnSe (∼7.8 THz) and BaF2 (∼6.7 THz), as well as hyperbolic phonon polaritons in GeS (6-8 THz).

Manufacturing of quantum-tunneling MIM nanodiodes via rapid atmospheric CVD in terahertz band

Quantum-tunneling metal-insulator-metal (MIM) diodes have emerged as a significant area of study in the field of materials science and electronics. Our previous work demonstrated the successful fabrication of these diodes using atmospheric pressure chemical vapor deposition (AP-CVD), a scalable method that surpasses traditional vacuum-based methods and allows for the fabrication of high-quality Al2O3 films with few pinholes. Here, we show that despite their extremely small size 0.002 µm2, the MIM nanodiodes demonstrate low resistance at zero bias. Moreover, we have observed a significant enhancement in resistance by six orders of magnitude compared to our prior work, Additionally, we have achieved a high responsivity of 9 AW-1, along with a theoretical terahertz cut-off frequency of 0.36 THz. Our approach provides an efficient alternative to cleanroom fabrication, opening up new opportunities for manufacturing terahertz-Band devices. The results of our study highlight the practicality and potential of our method in advancing nanoelectronics. This lays the foundation for the development of advanced quantum devices that operate at terahertz frequencies, with potential applications in telecommunications, medical imaging, and security systems.