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Gao Y, Weston A, Enaldiev V, Li X, Wang W, Nunn JE, Soltero I, Castanon EG, Carl A, De Latour H, Summerfield A, Hamer M, Howarth J, Clark N, Wilson NR, Kretinin AV, Fal'ko VI, Gorbachev R. Tunnel junctions based on interfacial two dimensional ferroelectrics. Nat Commun 2024; 15:4449. [PMID: 38789446 PMCID: PMC11126694 DOI: 10.1038/s41467-024-48634-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 05/09/2024] [Indexed: 05/26/2024] Open
Abstract
Van der Waals heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral bilayers of transition metal dichalcogenides. Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing the fabrication of diverse ferroelectric tunnelling junction devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials, and its understanding is an important milestone for the future development of optoelectronic devices based on sliding ferroelectricity.
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Affiliation(s)
- Yunze Gao
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Astrid Weston
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Vladimir Enaldiev
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Xiao Li
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Wendong Wang
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - James E Nunn
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Isaac Soltero
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Eli G Castanon
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Amy Carl
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Hugo De Latour
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Alex Summerfield
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Matthew Hamer
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - James Howarth
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Nicholas Clark
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Neil R Wilson
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Andrey V Kretinin
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- Department of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
| | - Vladimir I Fal'ko
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- Henry Royce Institute for Advanced Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
| | - Roman Gorbachev
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- Henry Royce Institute for Advanced Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
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Cao W, Deb S, Stern MV, Raab N, Urbakh M, Hod O, Kronik L, Shalom MB. Polarization Saturation in Multilayered Interfacial Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400750. [PMID: 38662941 DOI: 10.1002/adma.202400750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/10/2024] [Indexed: 05/04/2024]
Abstract
Van der Waals polytypes of broken inversion and mirror symmetries have been recently shown to exhibit switchable electric polarization even at the ultimate two-layer thin limit. Their out-of-plane polarization has been found to accumulate in a ladder-like fashion with each successive layer, offering 2D building blocks for the bottom-up construction of 3D ferroelectrics. Here, it is demonstrated experimentally that beyond a critical stack thickness, the accumulated polarization in rhombohedral polytypes of molybdenum disulfide saturates. The underlying saturation mechanism, deciphered via density functional theory and self-consistent Poisson-Schrödinger calculations, point to a purely electronic redistribution involving: 1. Polarization-induced bandgap closure that allows for cross-stack charge transfer and the emergence of free surface charge; 2. Reduction of the polarization saturation value, as well as the critical thickness at which it is obtained, by the presence of free carriers. The resilience of polar layered structures to atomic surface reconstruction, which is essentially unavoidable in polar 3D crystals, potentially allows for the design of new devices with mobile surface charges. The findings, which are of general nature, should be accounted for when designing switching and/or conductive devices based on ferroelectric layered materials.
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Affiliation(s)
- Wei Cao
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Swarup Deb
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Maayan Vizner Stern
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Noam Raab
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Leeor Kronik
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovoth, 7610001, Israel
| | - Moshe Ben Shalom
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
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Chen X, Ding X, Gou G, Zeng XC. Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI 2 Layers. NANO LETTERS 2024; 24:3089-3096. [PMID: 38426455 DOI: 10.1021/acs.nanolett.3c04869] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D "slidetronics". Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr2 and HgI2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm2, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.
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Affiliation(s)
- Xinfeng Chen
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Xinkai Ding
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
- School of Energy Materials & Chemical Engineering, Hefei University, Hefei 230601, People's Republic of China
| | - Gaoyang Gou
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Xiao Cheng Zeng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, People's Republic of China
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Yang D, Liang J, Wu J, Xiao Y, Dadap JI, Watanabe K, Taniguchi T, Ye Z. Non-volatile electrical polarization switching via domain wall release in 3R-MoS 2 bilayer. Nat Commun 2024; 15:1389. [PMID: 38360848 PMCID: PMC10869714 DOI: 10.1038/s41467-024-45709-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 02/02/2024] [Indexed: 02/17/2024] Open
Abstract
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS2 with natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response.
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Affiliation(s)
- Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jing Liang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jingda Wu
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Yunhuan Xiao
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jerry I Dadap
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada.
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada.
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Lv M, Wang J, Tian M, Wan N, Tong W, Duan C, Xue J. Multiresistance states in ferro- and antiferroelectric trilayer boron nitride. Nat Commun 2024; 15:295. [PMID: 38177167 PMCID: PMC10766609 DOI: 10.1038/s41467-023-44617-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Accepted: 12/22/2023] [Indexed: 01/06/2024] Open
Abstract
Stacking two atomic layers together can induce interlayer (sliding) ferroelectricity that is absent in their naturally occurring crystal forms. With the flexibility of two-dimensional materials, more layers could be assembled to give rise to even richer polarization states. Here, we show that three-layer boron nitride can host ferro- and antiferroelectric domains in the same sample. When used as a tunneling junction, the polarization of these domains could be switched in a layer-by-layer procedure, producing multiple resistance states. Theoretical investigation reveals an important role played by the interaction between the trilayer boron nitride and graphene substrate. These findings reveal the great potential and unique properties of 2D sliding ferroelectric materials.
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Affiliation(s)
- Ming Lv
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Jiulong Wang
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, China
| | - Ming Tian
- Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, China
| | - Neng Wan
- Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, China.
| | - Wenyi Tong
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, China.
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, China
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
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