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Han H, Zhang B, Zhang Z, Wang Y, Liu C, Singh AK, Song A, Li Y, Jin J, Zhang J. Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction. NANO LETTERS 2024; 24:8602-8608. [PMID: 38954477 DOI: 10.1021/acs.nanolett.4c01679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 × 1014 Jones) under 635 nm illumination with a low power density of 0.23 μW/cm2, promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.
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Affiliation(s)
- Hecheng Han
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Baoqing Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Zihao Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Yiming Wang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
| | - Arun Kumar Singh
- Department of Electronics and Communications Engineering, Punjab Engineering College (Deemed to be University), Chandigarh 160012, India
| | - Aimin Song
- Department of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom
- Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuxiang Li
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Jidong Jin
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of Korea
| | - Jiawei Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
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Dragoman M, Dinescu A, Aldrigo M, Dragoman D. Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1114. [PMID: 38998720 PMCID: PMC11243634 DOI: 10.3390/nano14131114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2024] [Revised: 06/26/2024] [Accepted: 06/27/2024] [Indexed: 07/14/2024]
Abstract
We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes: ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 v/w, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 v/w. An extended analysis of the defects produced during the fabrication process and their influences on the graphene diode performance is also presented.
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Affiliation(s)
- Mircea Dragoman
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Adrian Dinescu
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Martino Aldrigo
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Daniela Dragoman
- Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania
- Academy of Romanian Scientists, Strada Ilfov, Nr. 3, 050044 Bucharest, Romania
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Papnai B, Chen DR, Ghosh R, Yen ZL, Chen YX, Rehman KU, Chen HYT, Hsieh YP, Hofmann M. Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:972. [PMID: 38869597 PMCID: PMC11173504 DOI: 10.3390/nano14110972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Revised: 05/23/2024] [Accepted: 05/29/2024] [Indexed: 06/14/2024]
Abstract
Two-dimensional (2D) materials promise advances in electronic devices beyond Moore's scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.
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Affiliation(s)
- Bhartendu Papnai
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300044, Taiwan; (B.P.); (H.-Y.T.C.)
- Nanoscience and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ding-Rui Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan; (D.-R.C.); (Z.-L.Y.); (Y.-X.C.); (K.U.R.); (Y.-P.H.)
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Rapti Ghosh
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA;
- Chemical Sciences and Engineering Division, Physical Sciences and Engineering Directorate, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Zhi-Long Yen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan; (D.-R.C.); (Z.-L.Y.); (Y.-X.C.); (K.U.R.); (Y.-P.H.)
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Yu-Xiang Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan; (D.-R.C.); (Z.-L.Y.); (Y.-X.C.); (K.U.R.); (Y.-P.H.)
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Khalil Ur Rehman
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan; (D.-R.C.); (Z.-L.Y.); (Y.-X.C.); (K.U.R.); (Y.-P.H.)
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Hsin-Yi Tiffany Chen
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300044, Taiwan; (B.P.); (H.-Y.T.C.)
- College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan; (D.-R.C.); (Z.-L.Y.); (Y.-X.C.); (K.U.R.); (Y.-P.H.)
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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Kim JH, Sarkar S, Wang Y, Taniguchi T, Watanabe K, Chhowalla M. Room Temperature Negative Differential Resistance with High Peak Current in MoS 2/WSe 2 Heterostructures. NANO LETTERS 2024; 24:2561-2566. [PMID: 38363877 PMCID: PMC10906070 DOI: 10.1021/acs.nanolett.3c04607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 02/05/2024] [Accepted: 02/06/2024] [Indexed: 02/18/2024]
Abstract
Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p- and n-type materials without a lattice mismatch. Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostructures of MoS2 and WSe2 using van der Waals (vdW) contacts. The p-n junction shows negative differential resistance (NDR) due to Fowler-Nordheim (F-N) tunneling through the triangular barrier formed by applying a global back-gate bias (VGS). We also show that the integration of hexagonal boron nitride (h-BN) as an insulating tunnel barrier between MoS2 and WSe2 leads to the formation of sharp band edges and unintentional inelastic tunnelling current. The devices based on vdW contacts, global VGS, and h-BN tunnel barriers exhibit NDR with a peak current (Ipeak) of 315 μA, suggesting that the approach may be useful for applications.
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Affiliation(s)
- Jung Ho Kim
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Soumya Sarkar
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Yan Wang
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Manish Chhowalla
- Department
of Materials Science and Metallurgy, University
of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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