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Jonker D, Berenschot EJW, Tas NR, Tiggelaar RM, van Houselt A, Gardeniers HJGE. Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones. NANOSCALE RESEARCH LETTERS 2022; 17:100. [PMID: 36245035 PMCID: PMC9573847 DOI: 10.1186/s11671-022-03735-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 09/25/2022] [Indexed: 06/16/2023]
Abstract
Convex cylindrical silicon nanostructures, also referred to as silicon nanocones, find their value in many applications ranging from photovoltaics to nanofluidics, nanophotonics, and nanoelectronic applications. To fabricate silicon nanocones, both bottom-up and top-down methods can be used. The top-down method presented in this work relies on pre-shaping of silicon nanowires by ion beam etching followed by self-limited thermal oxidation. The combination of pre-shaping and oxidation obtains high-density, high aspect ratio, periodic, and vertically aligned sharp single-crystalline silicon nanocones at the wafer-scale. The homogeneity of the presented nanocones is unprecedented and may give rise to applications where numerical modeling and experiments are combined without assumptions about morphology of the nanocone. The silicon nanocones are organized in a square periodic lattice, with 250 nm pitch giving arrays containing 1.6 billion structures per square centimeter. The nanocone arrays were several mm2 in size and located centimeters apart across a 100-mm-diameter single-crystalline silicon (100) substrate. For single nanocones, tip radii of curvature < 3 nm were measured. The silicon nanocones were vertically aligned, baring a height variation of < 5 nm (< 1%) for seven adjacent nanocones, whereas the height inhomogeneity is < 80 nm (< 16%) across the full wafer scale. The height inhomogeneity can be explained by inhomogeneity present in the radii of the initial columnar polymer mask. The presented method might also be applicable to silicon micro- and nanowires derived through other top-down or bottom-up methods because of the combination of ion beam etching pre-shaping and thermal oxidation sharpening. A novel method is presented where argon ion beam etching and thermal oxidation sharpening are combined to tailor a high-density single-crystalline silicon nanowire array into a vertically aligned single-crystalline silicon nanocones array with < 3 nm apex radius of curvature tips, at the wafer scale.
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Affiliation(s)
- Dirk Jonker
- Mesoscale Chemical Systems, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AE, Enschede, The Netherlands.
- Physics of Interfaces and Nanomaterials, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AE, Enschede, The Netherlands.
| | - Erwin J W Berenschot
- Mesoscale Chemical Systems, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AE, Enschede, The Netherlands
| | - Niels R Tas
- Mesoscale Chemical Systems, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AE, Enschede, The Netherlands
| | - Roald M Tiggelaar
- NanoLab Cleanroom, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AE, Enschede, The Netherlands
| | - Arie van Houselt
- Physics of Interfaces and Nanomaterials, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AE, Enschede, The Netherlands
| | - Han J G E Gardeniers
- Mesoscale Chemical Systems, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AE, Enschede, The Netherlands
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Li P, Chen S, Dai H, Yang Z, Chen Z, Wang Y, Chen Y, Peng W, Shan W, Duan H. Recent advances in focused ion beam nanofabrication for nanostructures and devices: fundamentals and applications. NANOSCALE 2021; 13:1529-1565. [PMID: 33432962 DOI: 10.1039/d0nr07539f] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The past few decades have witnessed growing research interest in developing powerful nanofabrication technologies for three-dimensional (3D) structures and devices to achieve nano-scale and nano-precision manufacturing. Among the various fabrication techniques, focused ion beam (FIB) nanofabrication has been established as a well-suited and promising technique in nearly all fields of nanotechnology for the fabrication of 3D nanostructures and devices because of increasing demands from industry and research. In this article, a series of FIB nanofabrication factors related to the fabrication of 3D nanostructures and devices, including mechanisms, instruments, processes, and typical applications of FIB nanofabrication, are systematically summarized and analyzed in detail. Additionally, current challenges and future development trends of FIB nanofabrication in this field are also given. This work intends to provide guidance for practitioners, researchers, or engineers who wish to learn more about the FIB nanofabrication technology that is driving the revolution in 3D nanostructures and devices.
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Affiliation(s)
- Ping Li
- National Engineering Research Centre for High Efficiency Grinding, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
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Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing. MATERIALS 2020; 13:ma13061408. [PMID: 32244923 PMCID: PMC7143048 DOI: 10.3390/ma13061408] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2020] [Revised: 03/13/2020] [Accepted: 03/16/2020] [Indexed: 01/09/2023]
Abstract
Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.
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Kim CS, Hobbs RG, Agarwal A, Yang Y, Manfrinato VR, Short MP, Li J, Berggren KK. Focused-helium-ion-beam blow forming of nanostructures: radiation damage and nanofabrication. NANOTECHNOLOGY 2020; 31:045302. [PMID: 31578000 DOI: 10.1088/1361-6528/ab4a65] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Targeted irradiation of nanostructures by a finely focused ion beam provides routes to improved control of material modification and understanding of the physics of interactions between ion beams and nanomaterials. Here, we studied radiation damage in crystalline diamond and silicon nanostructures using a focused helium ion beam, with the former exhibiting extremely long-range ion propagation and large plastic deformation in a process visibly analogous to blow forming. We report the dependence of damage morphology on material, geometry, and irradiation conditions (ion dose, ion energy, ion species, and location). We anticipate that our method and findings will not only improve the understanding of radiation damage in isolated nanostructures, but will also support the design of new engineering materials and devices for current and future applications in nanotechnology.
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Affiliation(s)
- Chung-Soo Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, United States of America
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Garg V, Chou T, Liu A, De Marco A, Kamaliya B, Qiu S, Mote RG, Fu J. Weaving nanostructures with site-specific ion induced bidirectional bending. NANOSCALE ADVANCES 2019; 1:3067-3077. [PMID: 36133581 PMCID: PMC9418629 DOI: 10.1039/c9na00382g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2019] [Accepted: 06/18/2019] [Indexed: 05/13/2023]
Abstract
Site-specific ion-irradiation is a promising tool fostering strain-engineering of freestanding nanostructures to realize 3D-configurations towards various functionalities. We first develop a novel approach of fabricating freestanding 3D silicon nanostructures by low dose ion-implantation followed by chemical-etching. The fabricated nanostructures can then be deformed bidirectionally by varying the local irradiation of kiloelectronvolt gallium ions. By further tuning the ion-dose and energy, various nanostructure configurations can be realized, thus extending its horizon to new functional 3D-nanostructures. It has been revealed that at higher-energies (∼30 kV), the nanostructures can exhibit two-stage bidirectional-bending in contrast to the bending towards the incident-ions at lower-energies (∼16), implying an effective transfer of kinetic-energy. Computational studies show that the spatial-distribution of implanted-ions, dislocated silicon atoms, has potentially contributed to the local development of stresses. Nanocharacterization confirms the formation of two distinguishable ion-irradiated and un-irradiated regions, while the smoothened morphology of the irradiated-surface suggested that the bending is also coupled with sputtering at higher ion-doses. The bending effects associated with local ion irradiation in contrast to global ion irradiation are presented, with the mechanism elucidated. Finally, weaving of nanostructures is demonstrated through strain-engineering for new nanoscale artefacts such as ultra-long fully-bent nanowires, nano-hooks, and nano-meshes. The aligned growth of bacterial-cells is observed on the fabricated nanowires, and a mesh based "bacterial-trap" for site-specific capture of bacterial cells is demonstrated emphasizing the versatile nature of the current approach.
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Affiliation(s)
- Vivek Garg
- IITB-Monash Research Academy, Indian Institute of Technology Bombay Powai Mumbai 400076 India
- Department of Mechanical Engineering, Indian Institute of Technology Bombay Powai Mumbai 400076 India
- Department of Mechanical and Aerospace Engineering, Monash University Wellington Road Clayton Victoria 3800 Australia
| | - Tsengming Chou
- Laboratory of Multiscale Imaging, Stevens Institute of Technology Hoboken NJ 07030 USA
| | - Amelia Liu
- Monash Centre for Electron Microscopy, Monash University Clayton VIC 3800 Australia
| | - Alex De Marco
- Department of Biochemistry and Molecular Biology, Monash University Clayton VIC 3800 Australia
| | - Bhaveshkumar Kamaliya
- IITB-Monash Research Academy, Indian Institute of Technology Bombay Powai Mumbai 400076 India
- Department of Mechanical and Aerospace Engineering, Monash University Wellington Road Clayton Victoria 3800 Australia
- Department Physics, Indian Institute of Technology Bombay Powai Mumbai 400076 India
| | - Shi Qiu
- Department of Mechanical and Aerospace Engineering, Monash University Wellington Road Clayton Victoria 3800 Australia
| | - Rakesh G Mote
- Department of Mechanical Engineering, Indian Institute of Technology Bombay Powai Mumbai 400076 India
| | - Jing Fu
- Department of Mechanical and Aerospace Engineering, Monash University Wellington Road Clayton Victoria 3800 Australia
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Hanif I, Camara O, Tunes MA, Harrison RW, Greaves G, Donnelly SE, Hinks JA. Ion-beam-induced bending of semiconductor nanowires. NANOTECHNOLOGY 2018; 29:335701. [PMID: 29781443 DOI: 10.1088/1361-6528/aac659] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
The miniaturisation of technology increasingly requires the development of both new structures as well as novel techniques for their manufacture and modification. Semiconductor nanowires (NWs) are a prime example of this and as such have been the subject of intense scientific research for applications ranging from microelectronics to nano-electromechanical devices. Ion irradiation has long been a key processing step for semiconductors and the natural extension of this technique to the modification of semiconductor NWs has led to the discovery of ion beam-induced deformation effects. In this work, transmission electron microscopy with in situ ion bombardment has been used to directly observe the evolution of individual silicon and germanium NWs under irradiation. Silicon NWs were irradiated with either 6 keV neon ions or xenon ions at 5, 7 or 9.5 keV with a flux of 3 × 1013 ions cm-2 s-1. Germanium NWs were irradiated with 30 or 70 keV xenon ions with a flux of 1013 ions cm-2 s-1. These new results are combined with those reported in the literature in a systematic analysis using a custom implementation of the transport of ions in matter Monte Carlo computer code to facilitate a direct comparison with experimental results taking into account the wide range of experimental conditions. Across the various studies this has revealed underlying trends and forms the basis of a critical review of the various mechanisms which have been proposed to explain the deformation of semiconductor NWs under ion irradiation.
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Affiliation(s)
- Imran Hanif
- School of Computing and Engineering, University of Huddersfield, Queensgate, Huddersfield, HD1 3DH, United Kingdom
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Kwang-Hua CR. Low-Energy Ion Irradiated Silicon Nanowires: Anomalous Plastic Deformation. JOURNAL OF NUCLEAR ENGINEERING AND RADIATION SCIENCE 2018. [DOI: 10.1115/1.4038336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Abstract
We adopted the verified transition state theory, which originates from the quantum chemistry approach to explain the anomalous plastic flow or plastic deformation for Si nanowires irradiated with 100 keV (at room temperature regime) Ar+ ions as well as the observed amorphization along the Si nanowire (Johannes, et al. 2015, “Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires,” Nano Lett., 15, pp. 3800–3807). We shall illustrate some formulations which can help us calculate the temperature-dependent viscosity of flowing Si in nanodomains.
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Affiliation(s)
- Chu Rainer Kwang-Hua
- Transfer Centre, 4/F, No. 16, Lane 21, Kwang-Hui Road, Taipei 116, Taiwan, China; Distribution Centre, Golmud Mansion, 33, Road Yingbin, Golmud 816000, China e-mail:
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Aramesh M, Mayamei Y, Wolff A, Ostrikov KK. Superplastic nanoscale pore shaping by ion irradiation. Nat Commun 2018; 9:835. [PMID: 29483582 PMCID: PMC5827561 DOI: 10.1038/s41467-018-03316-7] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2017] [Accepted: 02/05/2018] [Indexed: 11/11/2022] Open
Abstract
Exposed to ionizing radiation, nanomaterials often undergo unusual transformations compared to their bulk form. However, atomic-level mechanisms of such transformations are largely unknown. This work visualizes and quantifies nanopore shrinkage in nanoporous alumina subjected to low-energy ion beams in a helium ion microscope. Mass transport in porous alumina is thus simultaneously induced and imaged with nanoscale precision, thereby relating nanoscale interactions to mesoscopic deformations. The interplay between chemical bonds, disorders, and ionization-induced transformations is analyzed. It is found that irradiation-induced diffusion is responsible for mass transport and that the ionization affects mobility of diffusive entities. The extraordinary room temperature superplasticity of the normally brittle alumina is discovered. These findings enable the effective manipulation of chemical bonds and structural order by nanoscale ion-matter interactions to produce mesoscopic structures with nanometer precision, such as ultra-high density arrays of sub-10-nm pores with or without the accompanying controlled plastic deformations. When nanomaterials are exposed to ionizing radiation, they often sustain mesoscopic changes not seen in their bulk form. Here, the authors use a helium ion microscope to induce and examine transformations in nanoporous alumina, drawing connections between atomic structure and nano- and microscale behavior in materials under irradiation.
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Affiliation(s)
- Morteza Aramesh
- School of Chemistry, Physics and Mechanical Engineering and Institute for Future Environments, Queensland University of Technology (QUT), Brisbane, QLD 4000, Australia. .,CSIRO-QUT Joint Sustainable Processes and Devices Laboratory, Common wealth Scientific and Industrial Research Organisation, Lindfield, NSW 2070, Australia. .,Laboratory of Biosensors and Bioelectronics, Institute for Biomedical Engineering, ETH Zürich, 8092, Zürich, Switzerland.
| | - Yashar Mayamei
- Department of Nano Science, University of Science and Technology, Daejeon, 34113, Republic of Korea
| | - Annalena Wolff
- Central Analytical Research Facility, Institute for Future Environments, Queensland University of Technology (QUT), Brisbane, QLD 4000, Australia
| | - Kostya Ken Ostrikov
- School of Chemistry, Physics and Mechanical Engineering and Institute for Future Environments, Queensland University of Technology (QUT), Brisbane, QLD 4000, Australia.,CSIRO-QUT Joint Sustainable Processes and Devices Laboratory, Common wealth Scientific and Industrial Research Organisation, Lindfield, NSW 2070, Australia
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Abstract
Focused ion beams (FIBs) are versatile tools with cross-disciplinary applications from the physical and life sciences to archeology. Nevertheless, the nanoscale patterning precision of FIBs is often accompanied by defect formation and sample deformation. In this study, the fundamental mechanisms governing the large-scale plastic deformation of nanostructures undergoing FIB processes are revealed by a series of molecular dynamic simulations. A surprisingly simple linear correlation between atomic volume removed from the film bulk and film deflection angle, regardless of incident ion energy and current, is revealed, demonstrating that the mass transport to the surface of material caused by energetic ion bombardment is the primary cause leading to nanostructure deformation. Hence, by controlling mass transport by manipulation of the incident ion energy and flux, it is possible to control the plastic deformation of nanostructures, thereby fabricating nanostructures with complex three-dimensional geometries.
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Affiliation(s)
- Cheng-Lun Wu
- Research Center for Applied Sciences, Academia Sinica , Taipei, Taiwan
| | - Fang-Cheng Li
- Research Center for Applied Sciences, Academia Sinica , Taipei, Taiwan
| | - Chun-Wei Pao
- Research Center for Applied Sciences, Academia Sinica , Taipei, Taiwan
| | - David J Srolovitz
- Department of Materials Science and Engineering, Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
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Glaser M, Kitzler A, Johannes A, Prucnal S, Potts H, Conesa-Boj S, Filipovic L, Kosina H, Skorupa W, Bertagnolli E, Ronning C, Fontcuberta
i Morral A, Lugstein A. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures. NANO LETTERS 2016; 16:3507-13. [PMID: 27168031 PMCID: PMC4901366 DOI: 10.1021/acs.nanolett.6b00315] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.
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Affiliation(s)
- Markus Glaser
- Institute of Solid State Electronics, TU Wien, Floragasse 7, 1040 Wien, Austria
| | - Andreas Kitzler
- Institute of Solid State Electronics, TU Wien, Floragasse 7, 1040 Wien, Austria
| | - Andreas Johannes
- Institute for Solid State
Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Slawomir Prucnal
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - Heidi Potts
- Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Sonia Conesa-Boj
- Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Lidija Filipovic
- Institute for Microelectronics, TU Wien, Gußhausstraße 25-29, 1040 Wien, Austria
| | - Hans Kosina
- Institute for Microelectronics, TU Wien, Gußhausstraße 25-29, 1040 Wien, Austria
| | - Wolfgang Skorupa
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany
| | | | - Carsten Ronning
- Institute for Solid State
Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Anna Fontcuberta
i Morral
- Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Alois Lugstein
- Institute of Solid State Electronics, TU Wien, Floragasse 7, 1040 Wien, Austria
- E-mail:
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Möller W, Johannes A, Ronning C. Shaping and compositional modification of zinc oxide nanowires under energetic manganese ion irradiation. NANOTECHNOLOGY 2016; 27:175301. [PMID: 26978260 DOI: 10.1088/0957-4484/27/17/175301] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
For ZnO nanowires of 150 to 200 nm diameter standing on a flat substrate, the development of the surface contour/morphology and the local elemental composition under 175 keV Mn irradiation has been investigated both experimentally and by means of three-dimensional dynamic Monte Carlo computer simulation. The simulation results reveal a complex interplay of sputter erosion, implant incorporation, resputtering and atomic mixing, which is discussed in detail. The sputter-induced thinning of the wire is in good quantitative agreement with the experimental results obtained from pre- and post-irradiation scanning electron microscopy. The experiments also confirm the predicted sharpening of the tip, neck formation at the bottom interface, and ultimately the detachment of the nanowires from the substrate at high ion fluence. Additional good agreement with experimental results from nano-x-ray fluorescence is also obtained for the continuously increasing Mn/Zn atomic ratio within the nanowires as a function of ion fluence. The simulation yields a great deal of additional information that has not been accessible in the experiments. From this, preferential sputtering of O compared with Zn is deduced. A significant contamination of the wires with substrate material arises from ion mixing at the wire/substrate interface, rather than from redeposition of sputtered substrate atoms. Surprising hollow profiles are observed. Their formation is attributed to a special mechanism of collisional transport which is characteristic of the irradiation of nanowires at a suitable combination of wire diameter and ion energy.
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Affiliation(s)
- Wolfhard Möller
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany
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