1
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de Jong D, Prosko CG, Han L, Malinowski FK, Liu Y, Kouwenhoven LP, Pfaff W. Controllable Single Cooper Pair Splitting in Hybrid Quantum Dot Systems. PHYSICAL REVIEW LETTERS 2023; 131:157001. [PMID: 37897758 DOI: 10.1103/physrevlett.131.157001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 09/07/2023] [Indexed: 10/30/2023]
Abstract
Cooper pair splitters hold utility as a platform for investigating the entanglement of electrons in Cooper pairs, but probing splitters with voltage-biased Ohmic contacts prevents the retention of electrons from split pairs since they can escape to the drain reservoirs. We report the ability to controllably split and retain single Cooper pairs in a multi-quantum-dot device isolated from lead reservoirs, and separately demonstrate a technique for detecting the electrons emerging from a split pair. First, we identify a coherent Cooper pair splitting charge transition using dispersive gate sensing at GHz frequencies. Second, we utilize a double quantum dot as an electron parity sensor to detect parity changes resulting from electrons emerging from a superconducting island.
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Affiliation(s)
- Damaz de Jong
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Christian G Prosko
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Lin Han
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Filip K Malinowski
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Yu Liu
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Wolfgang Pfaff
- Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
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2
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Schaal S, Ahmed I, Haigh JA, Hutin L, Bertrand B, Barraud S, Vinet M, Lee CM, Stelmashenko N, Robinson JWA, Qiu JY, Hacohen-Gourgy S, Siddiqi I, Gonzalez-Zalba MF, Morton JJL. Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification. PHYSICAL REVIEW LETTERS 2020; 124:067701. [PMID: 32109120 DOI: 10.1103/physrevlett.124.067701] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2019] [Accepted: 01/17/2020] [Indexed: 06/10/2023]
Abstract
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers a compact and scalable readout with high fidelity, however, further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier, that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio, we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 μs, well below the requirements for fault-tolerant readout and 30 times faster than without the Josephson parametric amplifier. Additionally, the Josephson parametric amplifier allows operation at a lower radio-frequency power while maintaining identical signal-to-noise ratio. We determine a noise temperature of 200 mK with a contribution from the Josephson parametric amplifier (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the readout speed.
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Affiliation(s)
- S Schaal
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
| | - I Ahmed
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - J A Haigh
- Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - L Hutin
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - B Bertrand
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - S Barraud
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - M Vinet
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - C-M Lee
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - N Stelmashenko
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - J W A Robinson
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - J Y Qiu
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - S Hacohen-Gourgy
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - I Siddiqi
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - M F Gonzalez-Zalba
- Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - J J L Morton
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
- Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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3
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Volk C, Chatterjee A, Ansaloni F, Marcus CM, Kuemmeth F. Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate. NANO LETTERS 2019; 19:5628-5633. [PMID: 31339321 DOI: 10.1021/acs.nanolett.9b02149] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double-, and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 μs.
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Affiliation(s)
- Christian Volk
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
| | - Anasua Chatterjee
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
| | - Fabio Ansaloni
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
| | - Charles M Marcus
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
| | - Ferdinand Kuemmeth
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
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4
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Zheng G, Samkharadze N, Noordam ML, Kalhor N, Brousse D, Sammak A, Scappucci G, Vandersypen LMK. Rapid gate-based spin read-out in silicon using an on-chip resonator. NATURE NANOTECHNOLOGY 2019; 14:742-746. [PMID: 31285611 DOI: 10.1038/s41565-019-0488-9] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2018] [Accepted: 05/27/2019] [Indexed: 06/09/2023]
Abstract
Silicon spin qubits are one of the leading platforms for quantum computation1,2. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. Since the signal from a single electron spin is minute, the different spin states are converted to different charge states3,4. Charge detection, so far, has mostly relied on external electrometers5-7, which hinders scaling to two-dimensional spin qubit arrays2,8,9. Alternatively, gate-based dispersive read-out based on off-chip lumped element resonators has been demonstrated10-13, but integration times of 0.2-2 ms were required to achieve single-shot read-out14-16. Here, we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge susceptibility, distinguishing whether or not an electron can oscillate between the dots in response to the probe power. With this approach, we achieve a signal-to-noise ratio of about six within an integration time of only 1 μs. Using Pauli's exclusion principle for spin-to-charge conversion, we demonstrate single-shot read-out of a two-electron spin state with an average fidelity of >98% in 6 μs. This result may form the basis of frequency-multiplexed read-out in dense spin qubit systems without external electrometers, therefore simplifying the system architecture.
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Affiliation(s)
- Guoji Zheng
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Nodar Samkharadze
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
- QuTech and Netherlands Organization for Applied Scientific Research (TNO), Delft, The Netherlands
| | - Marc L Noordam
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Nima Kalhor
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Delphine Brousse
- QuTech and Netherlands Organization for Applied Scientific Research (TNO), Delft, The Netherlands
| | - Amir Sammak
- QuTech and Netherlands Organization for Applied Scientific Research (TNO), Delft, The Netherlands
| | - Giordano Scappucci
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Lieven M K Vandersypen
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.
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5
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Hu X. Fast and space-efficient spin sensing. NATURE NANOTECHNOLOGY 2019; 14:735-736. [PMID: 31316155 DOI: 10.1038/s41565-019-0516-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Affiliation(s)
- Xuedong Hu
- Department of Physics, University at Buffalo, SUNY, Buffalo, NY, USA.
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6
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Landig AJ, Koski JV, Scarlino P, Reichl C, Wegscheider W, Wallraff A, Ensslin K, Ihn T. Microwave-Cavity-Detected Spin Blockade in a Few-Electron Double Quantum Dot. PHYSICAL REVIEW LETTERS 2019; 122:213601. [PMID: 31283346 DOI: 10.1103/physrevlett.122.213601] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2018] [Indexed: 06/09/2023]
Abstract
We investigate spin states of few electrons in a double quantum dot by coupling them to a magnetic field resilient NbTiN microwave resonator. The electric field of the resonator couples to the electric dipole moment of the charge states in the double dot. For a two-electron state the spin-triplet state has a vanishing electric dipole moment and can therefore be distinguished from the spin-singlet state. This way the charge dipole sensitivity of the resonator response is converted to a spin selectivity. We thereby investigate Pauli spin blockade known from transport experiments at finite source-drain bias. In addition we find an unconventional spin-blockade triggered by the absorption of resonator photons.
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Affiliation(s)
- A J Landig
- Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - J V Koski
- Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - P Scarlino
- Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - C Reichl
- Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - W Wegscheider
- Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - A Wallraff
- Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - K Ensslin
- Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - T Ihn
- Department of Physics, ETH Zürich, CH-8093 Zürich, Switzerland
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7
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West A, Hensen B, Jouan A, Tanttu T, Yang CH, Rossi A, Gonzalez-Zalba MF, Hudson F, Morello A, Reilly DJ, Dzurak AS. Gate-based single-shot readout of spins in silicon. NATURE NANOTECHNOLOGY 2019; 14:437-441. [PMID: 30858520 DOI: 10.1038/s41565-019-0400-7] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2018] [Accepted: 02/01/2019] [Indexed: 05/27/2023]
Abstract
Electron spins in silicon quantum dots provide a promising route towards realizing the large number of coupled qubits required for a useful quantum processor1-7. For the implementation of quantum algorithms and error detection8-10, qubit measurements are ideally performed in a single shot, which is presently achieved using on-chip charge sensors, capacitively coupled to the quantum dots11. However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots12. Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots13-15. This can be achieved using radiofrequency reflectometry on a single gate electrode defining the quantum dot itself15-19, significantly reducing the gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor.
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Affiliation(s)
- Anderson West
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Bas Hensen
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia.
| | - Alexis Jouan
- ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, The University of Sydney, Sydney, New South Wales, Australia
| | - Tuomo Tanttu
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Chih-Hwan Yang
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | | | | | - Fay Hudson
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Andrea Morello
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - David J Reilly
- ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, The University of Sydney, Sydney, New South Wales, Australia
- Microsoft Corporation, Station Q Sydney, The University of Sydney, Sydney, New South Wales, Australia
| | - Andrew S Dzurak
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia.
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8
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Abstract
We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack.
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9
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Veldhorst M, Eenink HGJ, Yang CH, Dzurak AS. Silicon CMOS architecture for a spin-based quantum computer. Nat Commun 2017; 8:1766. [PMID: 29242497 PMCID: PMC5730618 DOI: 10.1038/s41467-017-01905-6] [Citation(s) in RCA: 57] [Impact Index Per Article: 8.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2017] [Accepted: 10/24/2017] [Indexed: 12/02/2022] Open
Abstract
Recent advances in quantum error correction codes for fault-tolerant quantum computing and physical realizations of high-fidelity qubits in multiple platforms give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here, we propose an architecture for a silicon-based quantum computer processor based on complementary metal-oxide-semiconductor (CMOS) technology. We show how a transistor-based control circuit together with charge-storage electrodes can be used to operate a dense and scalable two-dimensional qubit system. The qubits are defined by the spin state of a single electron confined in quantum dots, coupled via exchange interactions, controlled using a microwave cavity, and measured via gate-based dispersive readout. We implement a spin qubit surface code, showing the prospects for universal quantum computation. We discuss the challenges and focus areas that need to be addressed, providing a path for large-scale quantum computing. Realisation of large-scale quantum computation requires both error correction capability and a large number of qubits. Here, the authors propose to use a CMOS-compatible architecture featuring a spin qubit surface code and individual qubit control via floating memory gate electrodes.
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Affiliation(s)
- M Veldhorst
- Qutech and Kavli Institute of Nanoscience, TU Delft, 2600, GA Delft, The Netherlands. .,Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, NSW, 2052, Australia.
| | - H G J Eenink
- Qutech and Kavli Institute of Nanoscience, TU Delft, 2600, GA Delft, The Netherlands.,Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, NSW, 2052, Australia
| | - C H Yang
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, NSW, 2052, Australia
| | - A S Dzurak
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, NSW, 2052, Australia.
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10
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Crippa A, Maurand R, Kotekar-Patil D, Corna A, Bohuslavskyi H, Orlov AO, Fay P, Laviéville R, Barraud S, Vinet M, Sanquer M, De Franceschi S, Jehl X. Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry. NANO LETTERS 2017; 17:1001-1006. [PMID: 28080065 DOI: 10.1021/acs.nanolett.6b04354] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive responses, we obtain the complete charge stability diagram of the device. Electron transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states, thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of electron transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot.
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Affiliation(s)
- Alessandro Crippa
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
- Dipartimento di Scienza dei Materiali, Università di Milano Bicocca , Via Cozzi 53, 20125 Milano, Italy
- CNR-IMM , Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
| | - Romain Maurand
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
| | | | - Andrea Corna
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
| | - Heorhii Bohuslavskyi
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
- CEA , LETI MINATEC Campus, F-38000 Grenoble, France
| | - Alexei O Orlov
- Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Patrick Fay
- Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Romain Laviéville
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
- CEA , LETI MINATEC Campus, F-38000 Grenoble, France
| | - Sylvain Barraud
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
- CEA , LETI MINATEC Campus, F-38000 Grenoble, France
| | - Maud Vinet
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
- CEA , LETI MINATEC Campus, F-38000 Grenoble, France
| | - Marc Sanquer
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
| | | | - Xavier Jehl
- Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France
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11
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Maurand R, Jehl X, Kotekar-Patil D, Corna A, Bohuslavskyi H, Laviéville R, Hutin L, Barraud S, Vinet M, Sanquer M, De Franceschi S. A CMOS silicon spin qubit. Nat Commun 2016; 7:13575. [PMID: 27882926 PMCID: PMC5123048 DOI: 10.1038/ncomms13575] [Citation(s) in RCA: 313] [Impact Index Per Article: 39.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2016] [Accepted: 10/14/2016] [Indexed: 12/11/2022] Open
Abstract
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.
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Affiliation(s)
- R. Maurand
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - X. Jehl
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - D. Kotekar-Patil
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - A. Corna
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - H. Bohuslavskyi
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - R. Laviéville
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - L. Hutin
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - S. Barraud
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - M. Vinet
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - M. Sanquer
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - S. De Franceschi
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
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12
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Jehl X, Niquet YM, Sanquer M. Single donor electronics and quantum functionalities with advanced CMOS technology. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:103001. [PMID: 26871255 DOI: 10.1088/0953-8984/28/10/103001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Recent progresses in quantum dots technology allow fundamental studies of single donors in various semiconductor nanostructures. For the prospect of applications figures of merits such as scalability, tunability, and operation at relatively large temperature are of prime importance. Beyond the case of actual dopant atoms in a host crystal, similar arguments hold for small enough quantum dots which behave as artificial atoms, for instance for single spin control and manipulation. In this context, this experimental review focuses on the silicon-on-insulator devices produced within microelectronics facilities with only very minor modifications to the current industrial CMOS process and tools. This is required for scalability and enabled by shallow trench or mesa isolation. It also paves the way for real integration with conventional circuits, as illustrated by a nanoscale device coupled to a CMOS circuit producing a radio-frequency drive on-chip. At the device level we emphasize the central role of electrostatics in etched silicon nanowire transistors, which allows to understand the characteristics in the full range from zero to room temperature.
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Affiliation(s)
- Xavier Jehl
- Université Grenoble Alpes, INAC, F-38000 Grenoble, France. CEA, INAC-SPSMS F-38000 Grenoble, France
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13
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Gonzalez-Zalba MF, Shevchenko SN, Barraud S, Johansson JR, Ferguson AJ, Nori F, Betz AC. Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor. NANO LETTERS 2016; 16:1614-1619. [PMID: 26866446 DOI: 10.1021/acs.nanolett.5b04356] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunneling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio frequency resonant circuit coupled via the gate. Differential capacitance changes at the interdot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-Stückelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunneling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, T2 ≈ 100 ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.
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Affiliation(s)
| | - Sergey N Shevchenko
- B.Verkin Institute for Low Temperature Physics and Engineering, Kharkov 61103, Ukraine
- V. Karazin Kharkov National University , Kharkov 61022, Ukraine
- Center for Emergent Matter Science, RIKEN , Wako-shi, Saitama 351-0198, Japan
| | | | - J Robert Johansson
- Center for Emergent Matter Science, RIKEN , Wako-shi, Saitama 351-0198, Japan
| | - Andrew J Ferguson
- Cavendish Laboratory, University of Cambridge , Cambridge CB3 0HE, United Kingdom
| | - Franco Nori
- Center for Emergent Matter Science, RIKEN , Wako-shi, Saitama 351-0198, Japan
- Department of Physics, The University of Michigan , Ann Arbor, Michigan 48109, United States
| | - Andreas C Betz
- Hitachi Cambridge Laboratory, Cambridge CB3 0HE, United Kingdom
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