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Piot N, Brun B, Schmitt V, Zihlmann S, Michal VP, Apra A, Abadillo-Uriel JC, Jehl X, Bertrand B, Niebojewski H, Hutin L, Vinet M, Urdampilleta M, Meunier T, Niquet YM, Maurand R, Franceschi SD. A single hole spin with enhanced coherence in natural silicon. Nat Nanotechnol 2022; 17:1072-1077. [PMID: 36138200 PMCID: PMC9576591 DOI: 10.1038/s41565-022-01196-z] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2022] [Accepted: 07/18/2022] [Indexed: 06/16/2023]
Abstract
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 μs, exceeding by an order of magnitude existing values reported for hole spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically purified silicon. Our finding enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.
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Affiliation(s)
- N Piot
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France
| | - B Brun
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France.
| | - V Schmitt
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France
| | - S Zihlmann
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France
| | - V P Michal
- Université Grenoble Alpes, CEA, IRIG-MEM-L_Sim, Grenoble, France
| | - A Apra
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France
| | | | - X Jehl
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France
| | - B Bertrand
- Université Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France
| | - H Niebojewski
- Université Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France
| | - L Hutin
- Université Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France
| | - M Vinet
- Université Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France
| | - M Urdampilleta
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - T Meunier
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Y-M Niquet
- Université Grenoble Alpes, CEA, IRIG-MEM-L_Sim, Grenoble, France
| | - R Maurand
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France.
| | - S De Franceschi
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France.
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Schaal S, Ahmed I, Haigh JA, Hutin L, Bertrand B, Barraud S, Vinet M, Lee CM, Stelmashenko N, Robinson JWA, Qiu JY, Hacohen-Gourgy S, Siddiqi I, Gonzalez-Zalba MF, Morton JJL. Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification. Phys Rev Lett 2020; 124:067701. [PMID: 32109120 DOI: 10.1103/physrevlett.124.067701] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2019] [Accepted: 01/17/2020] [Indexed: 06/10/2023]
Abstract
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers a compact and scalable readout with high fidelity, however, further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier, that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio, we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 μs, well below the requirements for fault-tolerant readout and 30 times faster than without the Josephson parametric amplifier. Additionally, the Josephson parametric amplifier allows operation at a lower radio-frequency power while maintaining identical signal-to-noise ratio. We determine a noise temperature of 200 mK with a contribution from the Josephson parametric amplifier (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the readout speed.
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Affiliation(s)
- S Schaal
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
| | - I Ahmed
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - J A Haigh
- Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - L Hutin
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - B Bertrand
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - S Barraud
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - M Vinet
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - C-M Lee
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - N Stelmashenko
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - J W A Robinson
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - J Y Qiu
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - S Hacohen-Gourgy
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - I Siddiqi
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - M F Gonzalez-Zalba
- Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - J J L Morton
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
- Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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3
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Crippa A, Ezzouch R, Aprá A, Amisse A, Laviéville R, Hutin L, Bertrand B, Vinet M, Urdampilleta M, Meunier T, Sanquer M, Jehl X, Maurand R, De Franceschi S. Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon. Nat Commun 2019; 10:2776. [PMID: 31270319 PMCID: PMC6610084 DOI: 10.1038/s41467-019-10848-z] [Citation(s) in RCA: 55] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2018] [Accepted: 05/22/2019] [Indexed: 11/11/2022] Open
Abstract
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1 K.
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Affiliation(s)
- A Crippa
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France.
| | - R Ezzouch
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - A Aprá
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - A Amisse
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - R Laviéville
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - L Hutin
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - B Bertrand
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - M Vinet
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - M Urdampilleta
- CNRS, Grenoble INP, Institut Néel, University of Grenoble Alpes, F-38000, Grenoble, France
| | - T Meunier
- CNRS, Grenoble INP, Institut Néel, University of Grenoble Alpes, F-38000, Grenoble, France
| | - M Sanquer
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - X Jehl
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - R Maurand
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France.
| | - S De Franceschi
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
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Seo M, Roulleau P, Roche P, Glattli DC, Sanquer M, Jehl X, Hutin L, Barraud S, Parmentier FD. Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots. Phys Rev Lett 2018; 121:027701. [PMID: 30085716 DOI: 10.1103/physrevlett.121.027701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2018] [Indexed: 06/08/2023]
Abstract
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise measurements in a quantum dot obtained in a silicon metal-oxide-semiconductor field-effect transistor. The quality of our device allows us to precisely associate the different transport regimes and their statistics with the internal state of the quantum dot. In particular, we report on large current fluctuations in the inelastic cotunneling regime, corresponding to different highly correlated, non-Markovian charge transfer processes. We have also observed unusually large current fluctuations at low energy in the elastic cotunneling regime, the origin of which remains to be fully investigated.
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Affiliation(s)
- M Seo
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
| | - P Roulleau
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
| | - P Roche
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
| | - D C Glattli
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
| | - M Sanquer
- Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France
| | - X Jehl
- Université Grenoble Alpes, CEA, INAC-PHELIQS, 38000 Grenoble, France
| | - L Hutin
- CEA, LETI, Minatec Campus, 38000 Grenoble, France
| | - S Barraud
- CEA, LETI, Minatec Campus, 38000 Grenoble, France
| | - F D Parmentier
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette cedex, France
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Maurand R, Jehl X, Kotekar-Patil D, Corna A, Bohuslavskyi H, Laviéville R, Hutin L, Barraud S, Vinet M, Sanquer M, De Franceschi S. A CMOS silicon spin qubit. Nat Commun 2016; 7:13575. [PMID: 27882926 PMCID: PMC5123048 DOI: 10.1038/ncomms13575] [Citation(s) in RCA: 313] [Impact Index Per Article: 39.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2016] [Accepted: 10/14/2016] [Indexed: 12/11/2022] Open
Abstract
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.
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Affiliation(s)
- R. Maurand
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - X. Jehl
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - D. Kotekar-Patil
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - A. Corna
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - H. Bohuslavskyi
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - R. Laviéville
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - L. Hutin
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - S. Barraud
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - M. Vinet
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
| | - M. Sanquer
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
| | - S. De Franceschi
- University Grenoble Alpes, F-38000 Grenoble, France
- CEA, INAC-PHELIQS, F-38000 Grenoble, France
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